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51. 发明授权

US06800564B2 Etching solution for signal wire and method of fabricating thin film transistor array panel with the same 有权
标题翻译：用于信号线的蚀刻解决方案和制造薄膜晶体管阵列面板的方法相同
公开(公告)号：US06800564B2
公开(公告)日：2004-10-05
申请号：US10190164
申请日：2002-07-05
申请人： Hong-Sick Park , Sung-Chul Kang
发明人： Hong-Sick Park , Sung-Chul Kang
IPC分类号： H01L21302
CPC分类号： H01L27/124 , G02F1/136286
摘要： In a method of fabricating a TFT array substrate, a gate wire is formed on an insulating substrate. The gate wire has gate lines, gate electrodes, and gate pads connected to the gate lines. A gate insulating layer and a semiconductor layer are formed in sequence. A data wire is formed, which includes data lines intersecting the gate lines, source electrodes connected to the data lines and placed close to the gate electrodes, drain electrodes opposite the source electrodes with respect to the gate electrodes, and data pads connected to the data lines. A protective layer is deposited, and is patterned to form contact holes exposing at least the drain electrodes. A silver or silver alloy conductive layer is deposited on the protective layer. The conductive layer is patterned using an etching solution with phosphoric acid, nitric acid, acetic acid, potassium peroxymonosulphate and ultra-pure water or an etching solution with nitric acid, acetic acid, phosphoric acid, ethylene glycol and ultra-pure water to thereby form a reflecting layer. The reflecting layer is connected to the drain electrodes through the contact holes.
摘要翻译：在制造TFT阵列基板的方法中，在绝缘基板上形成栅极线。栅极线具有连接到栅极线的栅极线，栅电极和栅极焊盘。依次形成栅极绝缘层和半导体层。形成数据线，其包括与栅极线相交的数据线，连接到数据线并放置在栅电极附近的源电极，相对于栅电极与源电极相对的漏电极，以及连接到数据的数据焊盘线条。沉积保护层，并且被图案化以形成暴露至少漏电极的接触孔。银或银合金导电层沉积在保护层上。使用具有磷酸，硝酸，乙酸，过氧化硫酸钠和超纯水的蚀刻溶液或者用硝酸，乙酸，磷酸，乙二醇和超纯水的蚀刻溶液来形成导电层，由此形成反射层。反射层通过接触孔与漏电极连接。

52. 发明授权

US06645682B2 Thinner for rinsing photoresist and method of treating photoresist layer 失效
标题翻译：用于冲洗光刻胶的稀释剂和处理光致抗蚀剂层的方法
公开(公告)号：US06645682B2
公开(公告)日：2003-11-11
申请号：US10169033
申请日：2002-06-25
申请人： Hong-Sick Park , Jin-Ho Ju , Yu-Kyung Lee , Sung-Chul Kang , Sae-Tae Oh , Doek-Man Kang
发明人： Hong-Sick Park , Jin-Ho Ju , Yu-Kyung Lee , Sung-Chul Kang , Sae-Tae Oh , Doek-Man Kang
IPC分类号： G03F742
CPC分类号： G03F7/168 , G03F7/38 , G03F7/42 , G03F7/422 , H01L21/02052 , H01L21/0274 , H01L21/31133
摘要： A thinner for rinsing photoresist including 50 to 80 wt. % of n-butyl acetate, propylene glycol alkyl ether, and propylene glycol alkyl ether acetate, is provided. The thinner is neither toxic to humans nor ecologically undesirable and has no unpleasant odor. The waste solutions thereof and associated waste water are easily handed so as to render this thinner environmental friendly. Additionally, the photoresist thinner of the present invention has excellent rinsing ability.
摘要翻译：用于冲洗光致抗蚀剂的稀释剂，包括50至80wt。提供了乙酸正丁酯，丙二醇烷基醚和丙二醇烷基醚乙酸酯的％。稀释剂既不对人体有毒，也不对生态有害，无异味。其废溶液和相关的废水容易交付，以使其更环保。此外，本发明的光致抗蚀剂薄膜具有优异的漂洗能力。

53. 发明授权

US08785935B2 Etchant, display device and method for manufacturing display device using the same 有权
标题翻译：蚀刻剂，显示装置及使用其的显示装置的制造方法
公开(公告)号：US08785935B2
公开(公告)日：2014-07-22
申请号：US13168408
申请日：2011-06-24
申请人： Hong-Sick Park , Wang-Woo Lee , Sang-Tae Kim , Joon-Woo Lee , Young-Chul Park , Young-Jun Jin , Kyong-Min Kang , Young-Jin Yoon , Suck-Jun Lee , O-Byoung Kwon , In-Ho Yu , Sang-Hoon Jang , Min-Ki Lim , Dong-Ki Kim
发明人： Hong-Sick Park , Wang-Woo Lee , Sang-Tae Kim , Joon-Woo Lee , Young-Chul Park , Young-Jun Jin , Kyong-Min Kang , Young-Jin Yoon , Suck-Jun Lee , O-Byoung Kwon , In-Ho Yu , Sang-Hoon Jang , Min-Ki Lim , Dong-Ki Kim
IPC分类号： H01L29/04 , H01L27/12
CPC分类号： H01L27/127 , H01L21/32134 , H01L27/124 , H01L27/1259 , H01L29/41733
摘要： An etchant includes: 5 to 20 wt % of persulfate, 1 to 10 wt % of at least one compound of an inorganic acid, an inorganic acid salt, or a mixture thereof, 0.3 to 5 wt % of a cyclic amine compound, 1 to 10 wt % of at least one compound of an organic acid, an organic acid salt, or a mixture thereof, 0.1 to 5 wt % of p-toluenesulfonic acid, and water, based on the total weight of the etchant. A copper-titanium etchant further includes 0.01 to 2 wt % of a fluoride-containing compound. A method of forming a display device using the etchant, and a display device, are also disclosed.
摘要翻译：蚀刻剂包括：5〜20重量％的过硫酸盐，1〜10重量％的至少一种无机酸化合物，无机酸盐或其混合物，0.3〜5重量％的环状胺化合物，1〜 10重量％的至少一种有机酸化合物，有机酸盐或其混合物，0.1至5重量％的对甲苯磺酸和水，基于蚀刻剂的总重量。另外，铜 - 钛蚀刻剂还含有0.01〜2重量％的含氟化合物。还公开了使用蚀刻剂形成显示装置的方法和显示装置。

54. 发明授权

US08755019B2 Method for manufacturing a liquid crystal display 有权
标题翻译：液晶显示器的制造方法
公开(公告)号：US08755019B2
公开(公告)日：2014-06-17
申请号：US13193488
申请日：2011-07-28
申请人： Ji-Young Park , Sang Gab Kim , Yong-Mo Choi , Hyung Jun Kim , Sung-Haeng Cho , Hong-Sick Park , Byeong-Jin Lee , Soo-Wan Yoon
发明人： Ji-Young Park , Sang Gab Kim , Yong-Mo Choi , Hyung Jun Kim , Sung-Haeng Cho , Hong-Sick Park , Byeong-Jin Lee , Soo-Wan Yoon
IPC分类号： G02F1/1339 , G02F1/13
CPC分类号： H01L27/1288 , G02F1/1362 , G02F2001/136231 , H01L29/41733
摘要： A method of manufacturing a liquid crystal display includes: forming a gate line including a gate electrode on a first substrate; forming a gate insulating layer on the gate line; sequentially forming a semiconductor layer, an amorphous silicon layer, and a data metal layer on the entire surface of the gate insulating layer; aligning the edges of the semiconductor layer and the data metal layer; forming a transparent conductive layer on the gate insulating layer and the data metal layer; forming a first pixel electrode and a second pixel electrode by patterning the transparent conductive layer; and forming a data line including a source electrode, a drain electrode, and an ohmic contact layer by etching the data metal layer and the amorphous silicon layer, using the first pixel electrode and the second pixel electrode as a mask, and exposing the semiconductor between the source electrode and the drain electrode.
摘要翻译：制造液晶显示器的方法包括：在第一基板上形成包括栅电极的栅极线; 在栅极线上形成栅极绝缘层; 在栅极绝缘层的整个表面上依次形成半导体层，非晶硅层和数据金属层; 对准半导体层和数据金属层的边缘; 在栅绝缘层和数据金属层上形成透明导电层; 通过图案化透明导电层形成第一像素电极和第二像素电极; 以及使用所述第一像素电极和所述第二像素电极作为掩模，通过蚀刻所述数据金属层和所述非晶硅层来形成包括源电极，漏电极和欧姆接触层的数据线，并且使所述半导体在源电极和漏电极。

55. 发明授权

US08603867B2 Composition for removing a photoresist and method of manufacturing a thin-film transistor substrate using the composition 有权
标题翻译：用于除去光致抗蚀剂的组合物和使用该组合物制造薄膜晶体管基板的方法
公开(公告)号：US08603867B2
公开(公告)日：2013-12-10
申请号：US13439418
申请日：2012-04-04
申请人： Bong-Kyun Kim , Shin-Il Choi , Hong-Sick Park , Wang-Woo Lee , Seok-Jun Jang , Byung-Uk Kim , Sun-Joo Park , Suk-Il Yoon , Jong-Hyun Jeong , Soon-Beom Hur
发明人： Bong-Kyun Kim , Shin-Il Choi , Hong-Sick Park , Wang-Woo Lee , Seok-Jun Jang , Byung-Uk Kim , Sun-Joo Park , Suk-Il Yoon , Jong-Hyun Jeong , Soon-Beom Hur
IPC分类号： H01L21/312
CPC分类号： G03F7/425 , H01L21/31133 , H01L27/1288 , H01L29/66765
摘要： A composition for removing a photoresist, the composition including about 1% by weight to about 10% by weight of tetramethyl ammonium hydroxide (“TMAH”), about 1% by weight to about 10% by weight of an alkanol amine, about 50% by weight to about 70% by weight of a glycol ether compound, about 0.01% by weight to about 1% by weight of a triazole compound, about 20% by weight to about 40% by weight of a polar solvent, and water, each based on a total weight of the composition.
摘要翻译：用于除去光致抗蚀剂的组合物，该组合物包含约1重量％至约10重量％的四甲基氢氧化铵（“TMAH”），约1重量％至约10重量％的烷醇胺，约50重量％约70重量％的二醇醚化合物，约0.01重量％至约1重量％的三唑化合物，约20重量％至约40重量％的极性溶剂和水，各自基于组合物的总重量。

56. 发明申请

US20130252384A1 TRENCH FORMING METHOD, METAL WIRING FORMING METHOD, AND METHOD OF MANUFACTURING THIN FILM TRANSISTOR ARRAY PANEL 有权
公开(公告)号：US20130252384A1
公开(公告)日：2013-09-26
申请号：US13556396
申请日：2012-07-24
申请人： Yong-Hwan RYU , Dae Ho KIM , Hong Sick PARK , Shin Il CHOI
发明人： Yong-Hwan RYU , Dae Ho KIM , Hong Sick PARK , Shin Il CHOI
IPC分类号： H01L21/336 , H01L21/28 , H01L21/311
CPC分类号： H01L21/31144 , H01L21/28 , H01L21/3081 , H01L21/3085 , H01L21/3086 , H01L21/31116 , H01L21/3212 , H01L21/76802 , H01L27/124 , H01L27/1248 , H01L27/1262 , H01L27/1288
摘要： A method of forming a thin film transistor array panel includes: forming a first insulating layer on a substrate; forming an amorphous carbon layer on the first insulating layer; forming a second insulating layer on the amorphous carbon layer; forming an opening in the amorphous carbon layer by patterning the second insulating layer and the amorphous carbon layer; and forming a trench in the first insulating layer by etching the first insulating layer, the etching the first insulating layer using the amorphous carbon layer including the opening as a mask.

57. 发明申请

US20130115727A1 ETCHING COMPOSITION AND METHOD OF MANUFACTURING A DISPLAY SUBSTRATE USING THE SYSTEM 有权
标题翻译：蚀刻组合物和使用该系统制造显示基板的方法
公开(公告)号：US20130115727A1
公开(公告)日：2013-05-09
申请号：US13534502
申请日：2012-06-27
申请人： Hong-Sick Park , Wang-Woo Lee , Bong-Kyun Kim , O-Byoung Kwon , Kyung-Bo Shim , Sang-Hoon Jang
发明人： Hong-Sick Park , Wang-Woo Lee , Bong-Kyun Kim , O-Byoung Kwon , Kyung-Bo Shim , Sang-Hoon Jang
IPC分类号： C09K13/06 , H01L33/34 , H01L33/26 , C23F1/18
CPC分类号： C09K13/04 , C09K13/08 , C23F1/02 , C23F1/18 , C23F1/38 , C23F1/44 , H01L21/32134 , H01L27/124 , H01L27/1288
摘要： An etching composition and a method of manufacturing a display substrate using the etching composition are disclosed. The etching composition includes phosphoric acid (H3PO4) of about 40% by weight to about 70% by weight, nitric acid (HNO3) of about 5% by weight to about 15% by weight, acetic acid (CH3COOH) of about 5% by weight to about 20% by weight, and a remainder of water. Thus, a metal layer including copper may be stably etched.
摘要翻译：公开了一种蚀刻组合物和使用该蚀刻组合物制造显示衬底的方法。蚀刻组合物包括约40重量％至约70重量％的磷酸（H 3 PO 4），约5重量％至约15重量％的硝酸（HNO 3），约5重量％至约15重量％的乙酸（CH 3 COOH）重量至约20％重量，余量为水。因此，可以稳定地蚀刻包括铜的金属层。

58. 发明授权

US08389454B2 Manufacturing and cleansing of thin film transistor panels 有权
标题翻译：制造和清洗薄膜晶体管面板
公开(公告)号：US08389454B2
公开(公告)日：2013-03-05
申请号：US12645471
申请日：2009-12-22
申请人： Hong-Sick Park
发明人： Hong-Sick Park
IPC分类号： C11D7/50
CPC分类号： C11D11/0047 , C11D7/263 , C11D7/3281
摘要： A manufacturing a thin film transistor array panel includes depositing a first thin film including aluminum on a substrate, patterning the first thin film by photolithography and etching, cleansing the substrate including the first thin film, and depositing a second thin film on the cleansed substrate. The cleansing is performed using a cleansing material including ultrapure water, cyclic amine, pyrogallol, benzotriazole, and methyl glycol. The cleansing material includes ultrapure water at about 85 wt % to about 99 wt %, cyclic amine at about 0.01 wt % to about 1.0 wt %, pyrogallol at about 0.01 wt % to 1.0 wt %, benzotriazole at about 0.01 wt % to 1.0 wt %, and methyl glycol at about 0.01 wt % to 1.0 wt %.
摘要翻译：制造薄膜晶体管阵列面板包括在基板上沉积包括铝的第一薄膜，通过光刻和蚀刻对第一薄膜进行图案化，清洗包括第一薄膜的基板，以及在清洁的基板上沉积第二薄膜。使用包括超纯水，环胺，连苯三酚，苯并三唑和甲基二醇的清洁材料进行清洁。清洁材料包括约85重量％至约99重量％的超纯水，约0.01重量％至约1.0重量％的环胺，约0.01重量％至1.0重量％的连苯三酚，约0.01重量％至1.0重量％的苯并三唑％和约0.01重量％至1.0重量％的甲基二醇。

59. 发明申请

US20130017636A1 COMPOSITION FOR REMOVING A PHOTORESIST AND METHOD OF MANUFACTURING A THIN-FILM TRANSISTOR SUBSTRATE USING THE COMPOSITION 有权
标题翻译：用于去除光电元件的组合物和使用组合物制造薄膜晶体管基板的方法
公开(公告)号：US20130017636A1
公开(公告)日：2013-01-17
申请号：US13439418
申请日：2012-04-04
申请人： Bong-Kyun KIM , Shin-Il CHOI , Hong-Sick PARK , Wang-Woo LEE , Seok-Jun JANG , Byung-Uk KIM , Sun-Joo PARK , Suk-Il YOON , Jong-Hyun JEONG , Soon-Beom HUR
发明人： Bong-Kyun KIM , Shin-Il CHOI , Hong-Sick PARK , Wang-Woo LEE , Seok-Jun JANG , Byung-Uk KIM , Sun-Joo PARK , Suk-Il YOON , Jong-Hyun JEONG , Soon-Beom HUR
IPC分类号： H01L33/08 , G03F7/42
CPC分类号： G03F7/425 , H01L21/31133 , H01L27/1288 , H01L29/66765
摘要： A composition for removing a photoresist, the composition including about 1% by weight to about 10% by weight of tetramethyl ammonium hydroxide (“TMAH”), about 1% by weight to about 10% by weight of an alkanol amine, about 50% by weight to about 70% by weight of a glycol ether compound, about 0.01% by weight to about 1% by weight of a triazole compound, about 20% by weight to about 40% by weight of a polar solvent, and water, each based on a total weight of the composition.
摘要翻译：用于除去光致抗蚀剂的组合物，该组合物包含约1重量％至约10重量％的四甲基氢氧化铵（TMAH），约1重量％至约10重量％的烷醇胺，约50重量％至约70重量％的二醇醚化合物，约0.01重量％至约1重量％的三唑化合物，约20重量％至约40重量％的极性溶剂，以及基于组合物的总重量。

60. 发明申请

US20120295380A1 ETCHANT AND METHOD OF MANUFACTURING AN ARRAY SUBSTRATE USING THE SAME 有权
标题翻译：使用其制造阵列基板的蚀刻和方法
公开(公告)号：US20120295380A1
公开(公告)日：2012-11-22
申请号：US13566239
申请日：2012-08-03
申请人： Bong-Kyun Kim , Jong-Hyun Choung , Byeong-Jin Lee , Sun-Young Hong , Hong-Sick Park , Shi-Yul Kim , Ki-Beom Lee , Sam-Young Cho , Sang-Woo Kim , Hyun-Cheol Shin , Won-Guk Seo
发明人： Bong-Kyun Kim , Jong-Hyun Choung , Byeong-Jin Lee , Sun-Young Hong , Hong-Sick Park , Shi-Yul Kim , Ki-Beom Lee , Sam-Young Cho , Sang-Woo Kim , Hyun-Cheol Shin , Won-Guk Seo
IPC分类号： H01L33/08
CPC分类号： C23F1/26 , C23F1/18 , H01L21/32134 , H01L27/124 , H01L29/458
摘要： An etchant includes about 0.1 percent by weight to about 30 percent by weight of ammonium persulfate (NH4)2S2O8, about 0.1 percent by weight to about 10 percent by weight of an inorganic acid, about 0.1 percent by weight to about 10 percent by weight of an acetate salt, about 0.01 percent by weight to about 5 percent by weight of a fluorine-containing compound, about 0.01 percent by weight to about 5 percent by weight of a sulfonic acid compound, about 0.01 percent by weight to about 2 percent by weight of an azole compound, and a remainder of water. Accordingly, the etchant may have high stability to maintain etching ability. Thus, manufacturing margins may be improved so that manufacturing costs may be reduced.
摘要翻译：蚀刻剂包括约0.1重量％至约30重量％的过硫酸铵（NH 4）2 S 2 O 8，约0.1重量％至约10重量％的无机酸，约0.1重量％至约10重量％的约0.01重量％至约5重量％的含氟化合物的乙酸盐，约0.01重量％至约5重量％的磺酸化合物，约0.01重量％至约2重量％的唑类化合物，剩余的水。因此，蚀刻剂可能具有高稳定性以保持蚀刻能力。因此，可以提高制造裕度，从而可以降低制造成本。

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