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51. 发明申请

US20070165356A1 SUBSTRATE SUPPORT HAVING HEAT TRANSFER SYSTEM 有权
标题翻译：具有热传递系统的基板支持
公开(公告)号：US20070165356A1
公开(公告)日：2007-07-19
申请号：US11683994
申请日：2007-03-08
申请人： Andrew Nguyen , Wing Cheng , Hiroji Hanawa , Semyon Kats , Kartik Ramaswamy , Yan Ye , Kwok Wong , Daniel Hoffman , Tetsuya Ishikawa , Brian Lue
发明人： Andrew Nguyen , Wing Cheng , Hiroji Hanawa , Semyon Kats , Kartik Ramaswamy , Yan Ye , Kwok Wong , Daniel Hoffman , Tetsuya Ishikawa , Brian Lue
IPC分类号： H01L21/683
CPC分类号： H01L21/67109
摘要： A support for a substrate processing chamber comprises a fluid circulating reservoir comprising a channel having serpentine convolutions. A fluid inlet supplies a heat transfer fluid to the fluid circulating reservoir and a fluid outlet discharges the heat transfer fluid. In one version, the channel is doubled over to turn back upon itself.
摘要翻译：用于衬底处理室的支撑件包括流体循环容器，其包括具有蛇形卷积的通道。流体入口将传热流体供应到流体循环储存器，并且流体出口排出传热流体。在一个版本中，频道翻倍翻转自己。

52. 发明授权

US07229340B2 Monitoring a metal layer during chemical mechanical polishing 有权
标题翻译：在化学机械抛光期间监测金属层
公开(公告)号：US07229340B2
公开(公告)日：2007-06-12
申请号：US11355418
申请日：2006-02-15
申请人： Hiroji Hanawa , Nils Johansson , Boguslaw Swedek , Manoocher Birang
发明人： Hiroji Hanawa , Nils Johansson , Boguslaw Swedek , Manoocher Birang
IPC分类号： B24B49/00 , B24B1/00
CPC分类号： B24B37/013 , B24B37/205 , B24B49/02 , B24B49/105 , B24B49/12 , G01B7/105
摘要： A sensor for monitoring a conductive film in a substrate during chemical mechanical polishing generates an alternating magnetic field that impinges a substrate and induces eddy currents. The sensor can have a core, a first coil wound around a first portion of the core and a second coil wound around a second portion of the core. The sensor can be positioned on a side of the polishing surface opposite the substrate. The sensor can detect a phase difference between a drive signal and a measured signal.
摘要翻译：用于在化学机械抛光期间监测衬底中的导电膜的传感器产生撞击衬底并引起涡流的交变磁场。传感器可以具有芯，围绕芯的第一部分缠绕的第一线圈和缠绕在芯的第二部分上的第二线圈。传感器可以位于与衬底相对的抛光表面的一侧。传感器可以检测到驱动信号和测量信号之间的相位差。

53. 发明授权

US07223676B2 Very low temperature CVD process with independently variable conformality, stress and composition of the CVD layer 失效
标题翻译：具有独立可变共形性，应力和CVD层组成的极低温CVD工艺
公开(公告)号：US07223676B2
公开(公告)日：2007-05-29
申请号：US10838052
申请日：2004-05-03
申请人： Hiroji Hanawa , Kartik Ramaswamy , Kenneth S. Collins , Amir Al-Bayati , Biagio Gallo , Andrew Nguyen
发明人： Hiroji Hanawa , Kartik Ramaswamy , Kenneth S. Collins , Amir Al-Bayati , Biagio Gallo , Andrew Nguyen
IPC分类号： H01L21/44 , H01L21/425
CPC分类号： H01L21/02274 , C23C14/48 , C23C16/507 , H01J37/321 , H01J37/32174 , H01J37/32357 , H01J37/32412 , H01J2237/2001 , H01L21/02126 , H01L21/2236 , H01L21/26513 , H01L21/2658 , H01L21/31604 , H01L21/318 , H01L21/823807 , H01L21/823814 , H01L21/823842 , H01L29/6659 , Y10T29/5313
摘要： A low temperature process for depositing a coating containing any of silicon, nitrogen, hydrogen or oxygen on a workpiece includes placing the workpiece in a reactor chamber facing a processing region of the chamber, introducing a process gas containing any of silicon, nitrogen, hydrogen or oxygen into the reactor chamber, generating a torroidal RF plasma current in a reentrant path through the processing region by applying RF plasma source power at an HF frequency on the order of about 10 MHz to a portion of a reentrant conduit external of the chamber and forming a portion of the reentrant path, applying RF plasma bias power at an LF frequency on the order of one or a few MHz to the workpiece, and maintaining the temperature of the workpiece under about 100 degrees C.
摘要翻译：用于在工件上沉积含有硅，氮，氢或氧中的任何一种的涂层的低温方法包括将工件放置在面向腔室的处理区域的反应器室中，引入含有硅，氮，氢或任何硅，氧气进入反应器室，通过将RF等离子体源功率施加在大约10MHz量级的HF频率处的RF等离子体源功率在腔室外部的折返导管的一部分上，形成通过处理区域的折返路径中的环形RF等离子体电流，并形成可折回路径的一部分，将RF等离子体偏置功率施加到工件的一个或几MHz量级的LF频率上，并将工件的温度保持在约100摄氏度。

54. 发明申请

US20070032095A1 Copper conductor annealing process employing high speed optical annealing with a low temperature-deposited optical absorber layer 有权
标题翻译：铜导体退火工艺采用低温沉积光吸收层进行高速光学退火
公开(公告)号：US20070032095A1
公开(公告)日：2007-02-08
申请号：US11199572
申请日：2005-08-08
申请人： Kartik Ramaswamy , Hiroji Hanawa , Biagio Gallo , Kenneth Collins , Kai Ma , Vijay Parihar , Dean Jennings , Abhilash Mayur , Amir Al-Bayati , Andrew Nguyen
发明人： Kartik Ramaswamy , Hiroji Hanawa , Biagio Gallo , Kenneth Collins , Kai Ma , Vijay Parihar , Dean Jennings , Abhilash Mayur , Amir Al-Bayati , Andrew Nguyen
IPC分类号： H01L21/00
CPC分类号： B23K26/0738 , B23K26/0608 , B23K26/0876 , B23K26/361 , B23K26/40 , B23K2103/172 , B23K2103/50 , H01L21/76843 , H01L21/76864 , H01L21/76873 , H01L21/76877 , H01L21/76886
摘要： A method of forming a conductor in a thin film structure on a semiconductor substrate includes forming high aspect ratio openings in a base layer having vertical side walls, depositing a dielectric barrier layer comprising a dielectric compound of a barrier metal on the surfaces of the high aspect ratio openings including the vertical side walls, depositing a metal barrier layer comprising the barrier metal on the first barrier layer, depositing a main conductor species seed layer on the metal barrier layer and depositing a main conductor layer. The method further includes annealing the main conductor layer by (a) directing light from an array of continuous wave lasers into a line of light extending at least partially across the thin film structure, and (b) translating the line of light relative to the thin film structure in a direction transverse to the line of light. The method of Claim 1 further comprising, prior to the annealing step, depositing an amorphous carbon optical absorber layer on the main conductor layer. The step of depositing an amorphous carbon optical absorber layer includes introducing a carbon-containing process gas into a reactor chamber containing the substrate in a process zone of the reactor, applying RF source power to an external reentrant conduit of the reactor to generate a reentrant toroidal RF plasma current passing through the process zone and applying a bias voltage to the substrate.
摘要翻译：在半导体衬底上形成薄膜结构中的导体的方法包括在具有垂直侧壁的基底层中形成高纵横比的开口，在高方面的表面上沉积包含阻挡金属的电介质化合物的介电阻挡层比例开口，包括垂直侧壁，在第一阻挡层上沉积包括阻挡金属的金属阻挡层，在金属阻挡层上沉积主导体种子种子层并沉积主导体层。该方法还包括通过以下步骤来退火主导体层：（a）将来自连续波激光器阵列的光引导到至少部分穿过薄膜结构的光线，以及（b）相对于薄的平面薄膜结构在横向于光线的方向上。 2.根据权利要求1所述的方法，还包括在所述退火步骤之前，在所述主导体层上沉积无定形碳光吸收层。沉积无定形碳光吸收层的步骤包括将含碳工艺气体引入反应器的反应器室中，该反应器室在反应器的工艺区域中，将RF源功率施加到反应器的外部折入导管以产生可重入环形 RF等离子体电流通过工艺区域并向衬底施加偏置电压。

55. 发明申请

US20070032054A1 Semiconductor substrate process using a low temperature deposited carbon-containing hard mask 有权
标题翻译：半导体衬底工艺使用低温沉积含碳硬掩模
公开(公告)号：US20070032054A1
公开(公告)日：2007-02-08
申请号：US11199593
申请日：2005-08-08
申请人： Kartik Ramaswamy , Hiroji Hanawa , Biagio Gallo , Kenneth Collins , Kai Ma , Vijay Parihar , Dean Jennings , Abhilash Mayur , Amir Al-Bayati , Andrew Nguyen
发明人： Kartik Ramaswamy , Hiroji Hanawa , Biagio Gallo , Kenneth Collins , Kai Ma , Vijay Parihar , Dean Jennings , Abhilash Mayur , Amir Al-Bayati , Andrew Nguyen
IPC分类号： H01L21/26
CPC分类号： H01L21/0276 , C23C16/26 , C23C16/507 , H01J37/321 , H01L21/0332 , H01L21/0337 , H01L21/268 , H01L21/3081 , H01L21/3086 , H01L21/31144 , H01L21/32139 , Y10S430/151
摘要： A method of processing a thin film structure on a semiconductor substrate using an optically writable mask includes placing the substrate in a reactor chamber, the substrate having on its surface a target layer to be etched in accordance with a predetermined pattern, and depositing a carbon-containing hard mask layer on the substrate by (a) introducing a carbon-containing process gas into the chamber, (b) generating a reentrant toroidal RF plasma current in a reentrant path that includes a process zone overlying the workpiece by coupling plasma RF source power to an external portion of the reentrant path, and (c) coupling RF plasma bias power or bias voltage to the workpiece. The method further includes photolithographically defining the predetermined pattern in the carbon-containing hard mask layer, and etching the target layer in the presence of the hard mask layer.
摘要翻译：使用光学可写掩模在半导体衬底上处理薄膜结构的方法包括将衬底放置在反应室中，所述衬底在其表面上根据预定图案在其表面上具有待蚀刻的靶层，并且沉积碳 - （a）将含碳工艺气体引入所述腔室中，（b）在折入路径中产生可重入环形的RF等离子体电流，所述凹入的RF等离子体电流包括通过耦合等离子体RF源功率的工件区域到（c）将RF等离子体偏置功率或偏置电压耦合到工件的外部部分。该方法还包括光刻地限定含碳硬掩模层中的预定图案，并且在存在硬掩模层的情况下蚀刻目标层。

56. 发明授权

US07094670B2 Plasma immersion ion implantation process 有权
标题翻译：等离子体浸没离子注入工艺
公开(公告)号：US07094670B2
公开(公告)日：2006-08-22
申请号：US11046661
申请日：2005-01-28
申请人： Kenneth S. Collins , Hiroji Hanawa , Kartik Ramaswamy , Andrew Nguyen , Amir Al-Bayati , Biagio Gallo
发明人： Kenneth S. Collins , Hiroji Hanawa , Kartik Ramaswamy , Andrew Nguyen , Amir Al-Bayati , Biagio Gallo
IPC分类号： H01L21/42 , H01L21/425 , H01L21/205
CPC分类号： H01J37/32082 , H01J37/321 , H01L21/67109 , H01L21/6831
摘要： A method of performing plasma immersion ion implantation on a workpiece in a plasma reactor chamber, includes placing the workpiece on a workpiece support in the chamber, controlling a temperature of the wafer support near a constant level, performing plasma immersion ion implantation on the workpiece by introducing an implant species precursor gas into the chamber and generating a plasma while minimizing deposition and minimizing etching by holding the temperature of the workpiece within a temperature range that is above a workpiece deposition threshold temperature and below a workpiece etch threshold temperature.
摘要翻译：在等离子体反应器室中对工件进行等离子体浸没离子注入的方法包括将工件放置在腔室中的工件支撑件上，将晶片支架的温度控制在恒定水平附近，通过在工件上进行等离子体浸没离子注入将植入物种前体气体引入室中并产生等离子体，同时使沉积最小化并且通过将工件的温度保持在高于工件沉积阈值温度并低于工件蚀刻阈值温度的温度范围内来最小化蚀刻。

57. 发明申请

US20060154570A1 Monitoring a metal layer during chemical mechanical polishing 有权
标题翻译：在化学机械抛光期间监测金属层
公开(公告)号：US20060154570A1
公开(公告)日：2006-07-13
申请号：US11355418
申请日：2006-02-15
申请人： Hiroji Hanawa , Nils Johansson , Boguslaw Swedek , Manoocher Birang
发明人： Hiroji Hanawa , Nils Johansson , Boguslaw Swedek , Manoocher Birang
IPC分类号： B24B49/00
CPC分类号： B24B37/013 , B24B37/205 , B24B49/02 , B24B49/105 , B24B49/12 , G01B7/105
摘要： A sensor for monitoring a conductive film in a substrate during chemical mechanical polishing generates an alternating magnetic field that impinges a substrate and induces eddy currents. The sensor can have a core, a first coil wound around a first portion of the core and a second coil wound around a second portion of the core. The sensor can be positioned on a side of the polishing surface opposite the substrate. The sensor can detect a phase difference between a drive signal and a measured signal.
摘要翻译：用于在化学机械抛光期间监测衬底中的导电膜的传感器产生撞击衬底并引起涡流的交变磁场。传感器可以具有芯，围绕芯的第一部分缠绕的第一线圈和缠绕在芯的第二部分上的第二线圈。传感器可以位于与衬底相对的抛光表面的一侧。传感器可以检测到驱动信号和测量信号之间的相位差。

58. 发明申请

US20060088655A1 RF measurement feedback control and diagnostics for a plasma immersion ion implantation reactor 有权
标题翻译： RF测量反馈控制和等离子体浸入式离子注入反应器的诊断
公开(公告)号：US20060088655A1
公开(公告)日：2006-04-27
申请号：US10971772
申请日：2004-10-23
申请人： Kenneth Collins , Hiroji Hanawa , Kartik Ramaswamy , Amir Al-Bayati , Andrew Nguyen , Biagio Gallo
发明人： Kenneth Collins , Hiroji Hanawa , Kartik Ramaswamy , Amir Al-Bayati , Andrew Nguyen , Biagio Gallo
IPC分类号： C23C14/00 , C23C16/52
CPC分类号： H01J37/321 , C23C14/48 , C23C14/54 , H01J37/32412 , H01J37/32935
摘要： A method of measuring ion dose in a plasma immersion ion implantation reactor during ion implantation of a selected species into a workpiece includes placing the workpiece on a pedestal in the reactor and feeding into the reactor a process gas comprising a species to be implanted into the workpiece, and then coupling RF plasma source power to a plasma in the reactor. It further includes coupling RF bias power to the workpiece by an RF bias power generator that is coupled to the workpiece through a bias feedpoint of the reactor and measuring RF current at the feedpoint to generate a current-related value, and then integrating the current-related over time to produce an ion implantation dose-related value.
摘要翻译：在将所选择的物质离子注入工件期间测量等离子体浸入式离子注入反应器中的离子剂量的方法包括将工件放置在反应器中的基座上，并将反应器中的工件气体进料到反应器中，然后将RF等离子体源功率耦合到反应器中的等离子体。它还包括通过RF偏置功率发生器将RF偏置功率耦合到工件，该RF偏置功率发生器通过电抗器的偏置馈电点耦合到工件，并且在馈电点处测量RF电流以产生电流相关值，随着时间的推移产生离子注入剂量相关值。

59. 发明申请

US20060073683A1 Plasma immersion ion implantation process using a capacitively coupled plasma source having low dissociation and low minimum plasma voltage 有权
标题翻译：使用具有低解离和低最小等离子体电压的电容耦合等离子体源的等离子体浸没离子注入工艺
公开(公告)号：US20060073683A1
公开(公告)日：2006-04-06
申请号：US11284975
申请日：2005-11-21
申请人： Kenneth Collins , Hiroji Hanawa , Kartik Ramaswamy , Andrew Nguyen , Amir Al-Bayati , Biagio Gallo , Gonzalo Monroy
发明人： Kenneth Collins , Hiroji Hanawa , Kartik Ramaswamy , Andrew Nguyen , Amir Al-Bayati , Biagio Gallo , Gonzalo Monroy
IPC分类号： H01L21/04
CPC分类号： H01J37/32357 , H01J37/32082 , H01J37/321 , H01J37/32412 , H01L21/2236
摘要： A method of ion implanting a species in a workpiece to a selected ion implantation profile depth includes placing a workpiece having a semiconductor material on an electrostatic chuck in or near a processing region of a plasma reactor chamber and applying a chucking voltage to the electrostatic chuck. The method further includes introducing into the chamber a precursor gas including a species to be ion implanted in the workpiece and applying an RF bias to the electrostatic chuck, the RF bias having a bias level corresponding to the ion implantation profile depth.
摘要翻译：将工件中的物质离子注入到选定的离子注入轮廓深度的方法包括将具有半导体材料的工件放置在等离子体反应器室的处理区域中或其附近的静电卡盘上，并向静电卡盘施加夹持电压。所述方法还包括将包括要离子植入的物质的前体气体引入所述室中并将RF偏压施加到所述静电卡盘，所述RF偏压具有对应于所述离子注入轮廓深度的偏置电平。

60. 发明申请

US20060019477A1 Plasma immersion ion implantation reactor having an ion shower grid 失效
标题翻译：具有离子喷淋格栅的等离子体浸没离子注入反应器
公开(公告)号：US20060019477A1
公开(公告)日：2006-01-26
申请号：US10896113
申请日：2004-07-20
申请人： Hiroji Hanawa , Tsutomu Tanaka , Kenneth Collins , Amir Al-Bayati , Kartik Ramaswamy , Andrew Nguyen
发明人： Hiroji Hanawa , Tsutomu Tanaka , Kenneth Collins , Amir Al-Bayati , Kartik Ramaswamy , Andrew Nguyen
IPC分类号： H01L21/425
CPC分类号： H01J37/32412 , C23C14/48 , H01J37/32357 , H01L21/2236 , H01L21/31612
摘要： A plasma immersion ion implantation process for implanting a selected species at a desired ion implantation depth profile in a workpiece is carried out in a reactor chamber with an ion shower grid that divides the chamber into an upper ion generation region and a lower process region, the ion shower grid having plural elongate orifices oriented in a non-parallel direction relative to a surface plane of the ion shower grid. The process includes placing a workpiece in the process region, the workpiece having a workpiece surface generally facing the surface plane of the ion shower grid, and furnishing the selected species into the ion generation region in gaseous, molecular or atomic form and evacuating the process region at an evacuation rate sufficient to create a pressure drop across the ion shower grid from the ion generation region to the process region of about a factor of at least four. The process further includes applying plasma source power to generate a plasma of the selected species in the ion generation region, and applying a grid potential to the ion shower grid to create a flux of ions from the plasma through the grid and into the process region. The process also includes applying a sufficient bias voltage to at least one of: (a) the workpiece, (b) the grid, relative to at least one of: (a) the workpiece, (b) a plasma in the ion generation region, (c) a surface of the chamber, to accelerate the flux of ions to a kinetic energy distribution generally corresponding to the desired ion implantation depth profile in the workpiece.
摘要翻译：用于在工件中以期望的离子注入深度分布植入选定物种的等离子体浸没离子注入工艺在反应室中进行，其中离子喷淋网格将室分成上部离子产生区域和下部工艺区域，具有相对于离子喷淋栅格的表面平行方向定向的多个细长孔的离子喷淋格栅。该方法包括将工件放置在工艺区域中，工件具有大致面向离子喷淋栅格的表面的工件表面，并且将所选择的物质以气态，分子或原子形式提供给离子产生区域并排空工艺区域其排气速率足以在离子喷淋格栅上从离子产生区域到达至少四倍的因子的过程区域产生压降。该方法还包括施加等离子体源功率以在离子产生区域中产生所选择的物质的等离子体，以及将栅极电位施加到离子淋浴栅格以产生离子通过栅格离子并进入过程区域的通量。该方法还包括向以下至少一个施加足够的偏置电压：（a）工件，（b）栅格，相对于以下至少一个：（a）工件，（b）离子产生区域中的等离子体，（c）室的表面，以将离子通量加速到通常对应于工件中期望的离子注入深度分布的动能分布。

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