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51. 发明申请

US20070085475A1 Semiconductor device and manufacturing method thereof 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US20070085475A1
公开(公告)日：2007-04-19
申请号：US11545910
申请日：2006-10-11
申请人： Hideaki Kuwabara , Hideto Ohnuma
发明人： Hideaki Kuwabara , Hideto Ohnuma
IPC分类号： H01J1/62 , H01J63/04
CPC分类号： H01L51/56 , H01L27/3241 , H01L27/3246 , H01L27/3258 , H01L27/3262 , H01L33/36 , H01L51/0011 , H01L51/52 , H01L2251/5338
摘要： As a result of miniaturization of a pixel region associated with an improvement in definition and an increase in a substrate size associated with an increase in area, defects due to precision, bending, and the like of a mask used at the time of evaporation have become issues. A partition including portions with different thicknesses over a pixel electrode (also referred to as a first electrode) in a display region and in the vicinity of a pixel electrode layer is formed, without increasing the number of steps, by using a photomask or a reticle provided with an auxiliary pattern having a light intensity reduction function made of a diffraction grating pattern or a semi-transmissive film.
摘要翻译：由于与清晰度的改善相关联的像素区域的小型化以及与面积的增加相关联的基板尺寸的增加，由于在蒸发时使用的掩模的精度，弯曲等的缺陷已经变成问题通过使用光掩模或掩模版形成在显示区域和像素电极层附近的像素电极（也称为第一电极）上具有不同厚度的部分，而不增加步骤数具有由衍射光栅图案或半透射膜构成的具有光强度降低功能的辅助图案。

52. 发明授权

US07151017B2 Method of manufacturing semiconductor device 有权
公开(公告)号：US07151017B2
公开(公告)日：2006-12-19
申请号：US10053572
申请日：2002-01-24
申请人： Hideto Ohnuma
发明人： Hideto Ohnuma
IPC分类号： H01L21/00
CPC分类号： H01L27/127 , H01L27/1214 , H01L27/1277
摘要： In a step of doping a silicon-based semiconductor film as a TFT active layer such as channel doping or the like, a protective film is formed by a CVD method as a pretreatment so as to prevent the silicon-based semiconductor film from being contaminated and etched. However, in the case of using the protective film formed by the CVD method, the problems in terms of throughput and production cost (an expensive apparatus is required) have been pointed out. The present invention is intended to solve the above-mentioned problems. Instead of the CVD method, a step of forming a chemical oxide film on a silicon-based semiconductor film is introduced as the pretreatment in the step of doping the silicon-based semiconductor film. Alternatively, a step is introduced in which unsaturated bonds present at the surface of the silicon-based semiconductor film are made to terminate with an element (for instance, oxygen) to be bonded with bonding energy higher than that of Si—H bonds. The above-mentioned pretreatment step can prevent the silicon-based semiconductor film from being etched by hydrogen ions used in the doping step.

53. 发明授权

US07122450B2 Process for manufacturing a semiconductor device 有权
标题翻译：半导体器件的制造方法
公开(公告)号：US07122450B2
公开(公告)日：2006-10-17
申请号：US10098153
申请日：2002-03-15
申请人： Shunpei Yamazaki , Hisashi Ohtani , Toru Mitsuki , Hideto Ohnuma , Tamae Takano , Kenji Kasahara , Koji Dairiki
发明人： Shunpei Yamazaki , Hisashi Ohtani , Toru Mitsuki , Hideto Ohnuma , Tamae Takano , Kenji Kasahara , Koji Dairiki
IPC分类号： H01L21/20 , H01L21/36
CPC分类号： H01L29/66765 , H01L27/12 , H01L27/1277 , H01L29/66757 , H01L29/78675 , H01L29/78678
摘要： A first amorphous semiconductor film is formed on an insulating surface. A catalyst element for promoting crystallization is added thereto. Thereafter, by a first heat treatment in an inert gas, a first crystalline semiconductor film is formed. A barrier layer and a second semiconductor layer are formed on the first crystalline semiconductor film. The second semiconductor layer contains a rare gas element at a concentration of 1×1019 to 2×1022/cm3, preferably 1×1020 to 1×1021/cm3 and oxygen at a concentration of 5×1017 to 1×1021/cm3. Subsequently, by a second treatment in an inert gas, the catalyst element remaining in the first crystalline semiconductor film is moved to the second semiconductor film.
摘要翻译：在绝缘表面上形成第一非晶半导体膜。加入促进结晶的催化剂元素。此后，通过在惰性气体中的第一次热处理，形成第一晶体半导体膜。在第一结晶半导体膜上形成阻挡层和第二半导体层。第二半导体层含有浓度为1×10 19至2×10 22 / cm 3的稀有气体元素，优选为1×10 20，浓度为5×10 17至1×10 21 / cm 3的氧气和1×10 12 / cm 3 ^{3 。随后，通过在惰性气体中的第二次处理，残留在第一结晶半导体膜中的催化剂元素移动到第二半导体膜。}

54. 发明申请

US20060220021A1 Method of manufacturing a semiconductor device 有权
标题翻译：制造半导体器件的方法
公开(公告)号：US20060220021A1
公开(公告)日：2006-10-05
申请号：US11448041
申请日：2006-06-07
申请人： Shunpei Yamazaki , Hisashi Ohtani , Hideto Ohnuma
发明人： Shunpei Yamazaki , Hisashi Ohtani , Hideto Ohnuma
IPC分类号： H01L29/04 , H01L31/00 , H01L29/10 , H01L29/15 , H01L31/036
CPC分类号： H01L27/1259 , G02F1/13454 , H01L27/1214 , H01L27/127
摘要： There is provided a method of manufacturing a semiconductor device having a TFT with sufficient characteristics and little fluctuation by accurately controlling the addition amount of impurity ions to the semiconductor layer using an ion doping device. A semiconductor device having a TFT showing sufficient and stable characteristics may be obtained by increasing the ratio of the dopant amount in the doping gas and decreasing the ambient atmosphere components (C, N, O) and hydrogen to be simultaneously added with the impurity ions at the time of doping.
摘要翻译：提供一种通过使用离子掺杂装置精确地控制向半导体层的杂质离子的添加量，制造具有足够特性和很小波动的TFT的半导体器件的制造方法。可以通过增加掺杂气体中的掺杂剂量和减少环境气氛成分（C，N，O）和同时加入杂质离子的氢来减少具有足够和稳定特性的TFT的半导体器件兴奋剂的时候

55. 发明申请

US20060201541A1 Cleaning-drying apparatus and cleaning-drying method 审中-公开
标题翻译：清洗干燥装置和清洗干燥方法
公开(公告)号：US20060201541A1
公开(公告)日：2006-09-14
申请号：US11368676
申请日：2006-03-07
申请人： Hideto Ohnuma , Kazuya Hanaoka , Kazuhiro Toshima
发明人： Hideto Ohnuma , Kazuya Hanaoka , Kazuhiro Toshima
IPC分类号： B08B3/02
CPC分类号： H01L21/67028 , H01L21/67034
摘要： It is an object to provide a semiconductor manufacturing apparatus provided with an apparatus performing a cleaning-drying process without a defect due to static electricity or the like, in a manufacturing process of a semiconductor device. One of features is that an ionizer included in a sheath is provided in a cleaning-drying apparatus. A structure in which an ionizer is covered with a sheath is used; accordingly, the ionizer can be operated without a concern of an electric leak due to an attachment of liquid. Also, static electricity generated in a cleaning-drying process can be removed.
摘要翻译：本发明的一个目的是提供一种半导体制造装置，该半导体制造装置具有在半导体装置的制造过程中进行清洁干燥处理而没有因静电等导致的缺陷的装置。其特征在于，包含在护套中的电离器设置在清洁干燥装置中。使用其中用护套覆盖电离器的结构; 因此，离子发生器可以在不考虑由于液体的附着引起的电泄漏的情况下被操作。此外，可以除去在清洁干燥过程中产生的静电。

56. 发明授权

US07071041B2 Method of manufacturing a semiconductor device 有权
公开(公告)号：US07071041B2
公开(公告)日：2006-07-04
申请号：US09761641
申请日：2001-01-18
申请人： Shunpei Yamazaki , Hisashi Ohtani , Hideto Ohnuma
发明人： Shunpei Yamazaki , Hisashi Ohtani , Hideto Ohnuma
IPC分类号： H01L21/84
CPC分类号： H01L27/1259 , G02F1/13454 , H01L27/1214 , H01L27/127
摘要： There is provided a method of manufacturing a semiconductor device having a TFT with sufficient characteristics and little fluctuation by accurately controlling the addition amount of impurity ions to the semiconductor layer using an ion doping device. A semiconductor device having a TFT showing sufficient and stable characteristics may be obtained by increasing the ratio of the dopant amount in the doping gas and decreasing the ambient atmosphere components (C, N, O) and hydrogen to be simultaneously added with the impurity ions at the time of doping.

57. 发明申请

US20060134891A1 Method for manufacturing semiconductor device 有权
公开(公告)号：US20060134891A1
公开(公告)日：2006-06-22
申请号：US11012172
申请日：2004-12-16
申请人： Hideto Ohnuma , Kouki Inoue
发明人： Hideto Ohnuma , Kouki Inoue
IPC分类号： H01L21/20
CPC分类号： H01L21/02672 , H01L21/02057 , H01L21/02063 , H01L21/02068 , H01L21/02164 , H01L21/02255 , H01L21/02675 , H01L21/2026 , H01L21/268 , H01L21/31111 , H01L21/3145 , H01L21/32136 , H01L21/3226 , H01L27/1277
摘要： An object of the present invention is to provide a method for manufacturing a semiconductor device in which, after crystallizing by using an element that promotes crystallization, holes are prevented from being generated in a crystalline semiconductor film with a concentration of the element in the crystalline semiconductor film decreased by performing gettering. To solve the problem, as a feature of the structure of the invention, in the case of removing a silicon oxide film formed over the semiconductor film, an etchant made of a solution containing fluorine and a substance having surface activity is used.

58. 发明申请

US20060118874A1 Semiconductor device and method of fabricating the same 有权
公开(公告)号：US20060118874A1
公开(公告)日：2006-06-08
申请号：US11337514
申请日：2006-01-24
申请人： Hideomi Suzawa , Koji Ono , Hideto Ohnuma , Hirokazu Yamagata , Shunpei Yamazaki
发明人： Hideomi Suzawa , Koji Ono , Hideto Ohnuma , Hirokazu Yamagata , Shunpei Yamazaki
IPC分类号： H01L27/12
CPC分类号： G02F1/13454 , H01L27/124 , H01L27/1255 , H01L29/42384 , H01L29/66757 , H01L29/78621 , H01L29/78633 , H01L29/78645 , H01L2029/7863
摘要： TFTs arranged in various circuits have structures that are suited for circuit functions, in order to improve operation characteristics and reliability of the semiconductor device, to lower consumption of electric power, to decrease the number of steps, to lower the cost of production and to improve the yield. The gradient of concentration of impurity element for controlling the conduction type in the LDD regions 622 and 623 of the TFT is such that the concentration increases toward the drain region. For this purpose, a tapered gate electrode 607 and a tapered gate-insulating film 605 are formed, and the ionized impurity element for controlling the conduction type is added to the semiconductor layer through the gate-insulating film 605.

59. 发明授权

US06998641B2 Semiconductor device having an efficient gettering region 有权
标题翻译：半导体器件具有有效的吸杂区域
公开(公告)号：US06998641B2
公开(公告)日：2006-02-14
申请号：US10183056
申请日：2002-06-27
申请人： Naoki Makita , Misako Nakazawa , Hideto Ohnuma , Takuya Matsuo
发明人： Naoki Makita , Misako Nakazawa , Hideto Ohnuma , Takuya Matsuo
IPC分类号： H01L31/112
CPC分类号： H01L29/66757 , H01L21/02532 , H01L21/02672 , H01L21/02686 , H01L27/1277 , H01L29/78612 , H01L29/78621
摘要： In order to solve the problem of inferior gettering efficiency in the n-channel TFT, the present invention provides at an end of the source/drain regions of the n-channel TFT a highly efficient gettering region that contains both of an n-type impurity and a p-type impurity with the concentration of the p-type impurity set higher than the concentration of the n-type impurity.
摘要翻译：为了解决在n沟道TFT中吸杂效率差的问题，本发明在n沟道TFT的源极/漏极区域的末端提供了一种高效率的吸杂区域，其包含n型杂质以及p型杂质浓度高于n型杂质浓度的p型杂质。

60. 发明申请

US20050245078A1 Manufacturing method of display device and semiconductor device 有权
标题翻译：显示器件和半导体器件的制造方法
公开(公告)号：US20050245078A1
公开(公告)日：2005-11-03
申请号：US11114870
申请日：2005-04-26
申请人： Hideto Ohnuma , Kiyofumi Ogino , Teruyuki Fujii
发明人： Hideto Ohnuma , Kiyofumi Ogino , Teruyuki Fujii
IPC分类号： H01L21/44 , H01L21/77
CPC分类号： H01L27/1292
摘要： It is an object of the present invention to improve the surface planarity of a film by uniforming the thickness of an insulating layer. Further, it is another object of the invention to provide a technology for manufacturing an electronic device typified by a high-definition and high-quality display device with high yield at low cost with the use of the insulating layer. In a method for manufacturing a semiconductor device according to the invention, a semiconductor layer is formed; an insulating layer is formed over the semiconductor layer; a wiring layer connected to the semiconductor layer is formed in an opening provided in the insulating layer; and an electrode layer connected to the wiring layer is formed. The insulating layer is formed by spin coating with a composition containing an insulating material, which has a viscosity of from 10 mP·s to 50 mP·s.
摘要翻译：本发明的目的是通过使绝缘层的厚度均匀化来改善膜的表面平坦度。此外，本发明的另一个目的是提供一种使用绝缘层以低成本制造高清晰度和高质量显示装置的电子装置的制造技术。在根据本发明的半导体器件的制造方法中，形成半导体层; 在半导体层上形成绝缘层; 连接到半导体层的布线层形成在设置在绝缘层中的开口中; 形成与布线层连接的电极层。绝缘层通过使用粘合剂为10mP.s至50mP.s.的包含绝缘材料的组合物进行旋涂而形成。

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