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    • 58. 发明授权
    • High voltage field effect transistor having a small ratio of channel
width to channel length and method of manufacture
    • 具有沟道宽度与通道长度比率小的高电压场效应晶体管及其制造方法
    • US5304836A
    • 1994-04-19
    • US878081
    • 1992-05-04
    • Guillermo LaoDale SumidaAnh K. Hoang-Le
    • Guillermo LaoDale SumidaAnh K. Hoang-Le
    • H01L29/06H01L29/10H01L29/40H01L29/78
    • H01L29/402H01L29/1033H01L29/405H01L29/7813H01L29/7836
    • The present invention is directed to a high voltage field effect transistor (FET) constructed on the major surface of a substrate of a first conductivity type. The FET includes a drain region of a second conductivity type located in the major surface and a generally annular drift region of the second conductivity type, located in the major surface and outside of the drain region. A generally annular gate is located on the major surface and outside of the drift region, and a generally annular source region is located in the major surface and outside of the gate. A first channel stop is located in the major surface and outboard of the source region, and a second channel stop located in the major surface and beneath the gate, having at least two portions in close proximity to each other. A channel region is located in the major surface and between the two second channel stop portions. The second channel stop blocks communication between the source region and the drift region except through the channel region.
    • 本发明涉及一种构造在第一导电类型的衬底的主表面上的高电压场效应晶体管(FET)。 FET包括位于主表面中的第二导电类型的漏极区域和位于漏极区域的主表面和外部的第二导电类型的大致环形漂移区域。 大致环形的栅极位于漂移区的主表面和外部,并且大致环形的源极区域位于栅极的主表面和外部。 第一通道止动件位于源区域的主表面和外侧,并且位于主表面和门下方的第二通道止动件具有至少两个彼此靠近的部分。 通道区域位于主表面和两个第二通道停止部分之间。 第二通道停止阻止除了通道区域之外的源极区域和漂移区域之间的通信。