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    • 59. 发明授权
    • Method of grinding a sapphire wafer
    • 研磨蓝宝石晶圆的方法
    • US4662124A
    • 1987-05-05
    • US610925
    • 1984-05-15
    • Ichiro KatoSigekazu Suzuki
    • Ichiro KatoSigekazu Suzuki
    • B24B7/22B24B1/00B24B7/04B24B7/16H01L21/304H01L21/86
    • B24B7/16B24B1/00Y10S438/967Y10S438/973
    • A sapphire wafer-grinding method which can minimize the warp of a plane ground sapphire wafer. A sapphire wafer used with a semiconductor device is so fabricated that its surface is constituted by an R plane {1102}. A plurality of C planes or atomic net planes (0001) extend in parallel crosswise of the sapphire wafer at an inclination angle of about 57.6.degree. to the surface or R plane {1102} of the sapphire wafer. The particles of a rotating grindstone are moved in the normal inclination direction of the C planes (0001) of the sapphire wafer to grind the surface or R plane {1102} of the sapphire wafer. The normal inclination direction of the C planes (0001) of the sapphire wafer includes the directions which are deflected on the R plane from the projection of the C axis [0001] of the sapphire wafer to an extent of .+-.35.degree..
    • 蓝宝石晶圆研磨方法,可以最小化平面磨碎蓝宝石晶片的翘曲。 与半导体器件一起使用的蓝宝石晶片被制造成其表面由R平面{1&upbar&102}构成。 多个C平面或原子网平面(0001)以与蓝宝石晶片的表面或R平面{1&upbar&102}大约57.6°的倾斜角平行地延伸到蓝宝石晶片。 旋转磨石的粒子沿着蓝宝石晶片的C面(0001)的正常倾斜方向移动,以研磨蓝宝石晶片的表面或R平面{1&upbar&102}。 蓝宝石晶片的C面(0001)的正常倾斜方向包括从蓝宝石晶片的C轴[0001]的突起在R平面上偏转到+/- 35度的方向。