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    • 51. 发明申请
    • Contact structure for an electrically operated II/VI semiconductor element and process for the production thereof
    • 电动II / VI半导体元件的接触结构及其制造方法
    • US20040219697A1
    • 2004-11-04
    • US10721065
    • 2003-11-24
    • Technische Universitaet Berlin
    • Matthias StrassburgOliver SchulzUdo W. PohlDieter Bimberg
    • H01L021/00
    • H01L33/40H01L21/443H01L33/28H01S5/0425H01S5/327
    • A process for the production of contacts for electrically operated II/VI semiconductor structures (for example laser diodes). The contact materials palladium and gold hitherto used in relation to electrically operated II/VI semiconductor lasers are distinguished by a relatively great, not purely ohmic specific contact resistance in relation to the II/VI cover layer. The consequentially necessary higher operating voltages result in the unnecessary generation of heat and thus substantially accelerate degradation of the entire laser structure. That effect causes a limitation in terms of the service life of II/VI semiconductor laser diodes. The invention permits the operation of semiconductor laser diodes with lower operating voltages. The II/VI semiconductor laser diodes produced with our invention are distinguished by a longer service life. That permits inter alia commercial use of semiconductor laser diodes in the blue-green spectral range.
    • 用于生产用于电操作的II / VI半导体结构(例如激光二极管)的触点的方法。 迄今用于电操作的II / VI半导体激光器的接触材料钯和金的特征在于相对于II / VI覆盖层相对较大而非纯欧姆的比接触电阻。 因此必要的较高工作电压导致不必要的热量产生,从而基本上加速整个激光器结构的劣化。 这种影响导致了II / VI半导体激光二极管的使用寿命方面的限制。 本发明允许具有较低工作电压的半导体激光二极管的操作。 本发明生产的II / VI半导体激光二极管具有较长的使用寿命。 这允许在蓝 - 绿光谱范围内商业使用半导体激光二极管。