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51. 发明申请

US20120086476A1 Fast and accurate current driver with zero standby current and features for boost and temperature compensation for MRAM write circuit 有权
公开(公告)号：US20120086476A1
公开(公告)日：2012-04-12
申请号：US12925004
申请日：2010-10-12
申请人： Perng-Fei Yuh , Pokang Wang , Lejan Pu , Minh Tran , Chao-Hung Chang
发明人： Perng-Fei Yuh , Pokang Wang , Lejan Pu , Minh Tran , Chao-Hung Chang
IPC分类号： H03K3/00
CPC分类号： G05F3/26 , G11C11/16 , G11C29/021 , G11C29/028
摘要： Systems and methods for realizing current drivers without current or voltage feedback for devices that require accurate current drive with zero standby current has been disclosed. In a preferred embodiment of the invention this current driver is applied for write circuits for MRAMs. A fast and accurate reference current is generated by diode voltage divided by resistor without any feedback. The diode current is not fed back from the reference current. The diode current is generated from a regulated voltage. Temperature compensation of the write current is inherently built in the diode current reference. Fine-tuning of the temperature coefficient is achieved by mixing poly and diffusion resistors. A switch inserted in the current driver can turn on the driver fast and without a need for standby current. Leading boost in the current driver can fast charge the large coupling capacitance of word and bit lines and speed up write timing.

52. 发明申请

US20120085728A1 Novel process for MEMS scanning mirror with mass remove from mirror backside 有权
标题翻译： MEMS扫描镜的新工艺，从镜面背面去除质量
公开(公告)号：US20120085728A1
公开(公告)日：2012-04-12
申请号：US12924873
申请日：2010-10-07
申请人： Jun Chen , Guomin Mao , Tom Zhong , Wei Cao , Yee-Chung Fu , Chyu-Jiuh Torng
发明人： Jun Chen , Guomin Mao , Tom Zhong , Wei Cao , Yee-Chung Fu , Chyu-Jiuh Torng
IPC分类号： B81C1/00
CPC分类号： B81B3/0045 , B81B2201/042 , G02B26/0841
摘要： Two methods of fabricating a MEMS scanning mirror having a tunable resonance frequency are described. The resonance frequency of the mirror is set to a particular value by mass removal from the backside of the mirror during fabrication.
摘要翻译：描述制造具有可调共振频率的MEMS扫描反射镜的两种方法。反射镜的共振频率通过在制造期间从反射镜的背面质量去除而被设定为特定的值。

53. 发明申请

US20120069644A1 Replaceable, precise-tracking reference lines for memory products 有权
标题翻译：存储产品的可更换，精确跟踪参考线
公开(公告)号：US20120069644A1
公开(公告)日：2012-03-22
申请号：US12924184
申请日：2010-09-22
申请人： Lejan Pu , Toshio Sunaga
发明人： Lejan Pu , Toshio Sunaga
IPC分类号： G11C11/00 , G11C11/14 , G11C7/00
CPC分类号： G11C7/18 , G11C7/06 , G11C8/14 , G11C13/0004 , G11C13/004 , G11C2013/0054 , G11C2211/5634
摘要： Systems and methods to improve reliability of sensing operations of semiconductor memory arrays requiring reading references such as MRAM or any type of phase change memory (PCM), and to improve yield of the memory arrays have been achieved. The memory array is divided into multiple parts, such as sections or segments. Reference word lines or reference bit lines or both are deployed in each of the multiple parts. Thus, the distance between an accessed line and the correspondent reference line is reduced, and hence the parasitic parameter tracking capability is enhanced significantly. Additionally spare reference word lines or spare reference bit lines can be deployed in each of the multiple parts.
摘要翻译：已经实现了提高需要读取诸如MRAM或任何类型的相变存储器（PCM）的参考的半导体存储器阵列的感测操作的可靠性的系统和方法，并且提高了存储器阵列的产量。存储器阵列被分成多个部分，例如部分或部分。参考字线或参考位线或两者部署在多个部分的每一个中。因此，所访问的线路和通信参考线路之间的距离减小，因此寄生参数跟踪能力显着提高。另外备用参考字线或备用参考位线可以部署在多个部分的每一个中。

54. 发明授权

US08133439B2 GMR biosensor with enhanced sensitivity 有权
标题翻译： GMR生物传感器具有增强的灵敏度
公开(公告)号：US08133439B2
公开(公告)日：2012-03-13
申请号：US11497162
申请日：2006-08-01
申请人： Po-Kang Wang , Xizeng Shi , Chyu-Jiuh Torng
发明人： Po-Kang Wang , Xizeng Shi , Chyu-Jiuh Torng
IPC分类号： G01N15/06
CPC分类号： G01R33/0052 , B82Y25/00 , G01N15/0656 , G01N27/745 , G01N2015/0065 , G01R33/05 , G01R33/093 , G01R33/098 , Y10T29/49124 , Y10T29/49986
摘要： A sensor array comprising a series connection of parallel GMR sensor stripes provides a sensitive mechanism for detecting the presence of magnetized particles bonded to biological molecules that are affixed to a substrate. The adverse effect of hysteresis on the maintenance of a stable bias point for the magnetic moment of the sensor free layer is eliminated by a combination of biasing the sensor along its longitudinal direction rather than the usual transverse direction and by using the overcoat stress and magnetostriction of magnetic layers to create a compensatory transverse magnetic anisotropy. By making the spaces between the stripes narrower than the dimension of the magnetized particle and by making the width of the stripes equal to the dimension of the particle, the sensitivity of the sensor array is enhanced.
摘要翻译：包括并联GMR传感器条的串联连接的传感器阵列提供了用于检测粘附到固定到基底上的生物分子的磁化颗粒的存在的敏感机制。通过将传感器沿着其纵向方向而不是通常的横向偏置并通过使用传感器的外涂层应力和磁致伸缩的组合来消除滞后对维持传感器自由层的磁矩的稳定偏置点的不利影响磁性层产生补偿横向磁各向异性。通过使条纹之间的空间比磁化粒子的尺寸窄，并且通过使条纹的宽度等于粒子的尺寸，传感器阵列的灵敏度增强。

55. 发明授权

US08105948B2 Use of CMP to contact a MTJ structure without forming a via 有权
标题翻译：使用CMP接触MTJ结构而不形成通孔
公开(公告)号：US08105948B2
公开(公告)日：2012-01-31
申请号：US12070286
申请日：2008-02-14
申请人： Adam Zhong , Wai-Ming Kan , Tom Zhong , Chyu-Jiuh Torng
发明人： Adam Zhong , Wai-Ming Kan , Tom Zhong , Chyu-Jiuh Torng
IPC分类号： H01L21/302
CPC分类号： H01L21/31053 , H01L43/12
摘要： A process is described for making contact to the buried capping layers of GMR and MTJ devices without the need to form and fill via holes. CMP is applied to the structure in three steps: (1) conventional CMP (2) a Highly Selective Slurry (HSS) is substituted for the conventional slurry to just expose the capping layer, and (3) the HSS is diluted and used to clean the surface as well as to cause a slight protrusion of the capping layers above the surrounding dielectric surface, making it easier the contact them without damaging the devices below.
摘要翻译：描述了与GMR和MTJ装置的掩埋覆盖层接触而不需要形成和填充通孔的方法。 CMP结构分为三个步骤：（1）常规CMP（2）采用高选择性浆料（HSS）代替传统的浆料，仅暴露顶盖层，（3）将HSS稀释并用于清洗表面以及使覆盖层在周围的电介质表面上稍微突出，使得更容易接触它们而不损坏下面的器件。

56. 发明授权

US08058697B2 Spin transfer MRAM device with novel magnetic synthetic free layer 有权
标题翻译：具有新型磁性合成自由层的自旋转移MRAM器件
公开(公告)号：US08058697B2
公开(公告)日：2011-11-15
申请号：US11728491
申请日：2007-03-26
申请人： Yimin Guo , Cheng Horng , Ru-Ying Tong
发明人： Yimin Guo , Cheng Horng , Ru-Ying Tong
IPC分类号： H01L29/82 , G11C11/02
CPC分类号： G01R33/093 , B82Y25/00 , B82Y40/00 , G11C11/161 , H01F10/3254 , H01F10/3272 , H01F41/302
摘要： We describe a CPP MTJ MRAM element that utilizes transfer of spin angular momentum as a mechanism for changing the magnetic moment direction of a free layer. The device includes a tunneling barrier layer of MgO and a non-magnetic CPP layer of Cu or Cr and utilizes a novel synthetic free layer having three ferromagnetic layers mutually exchange coupled in pairwise configurations. The free layer comprises an inner ferromagnetic and two outer ferromagnetic layers, with the inner layer being ferromagnetically exchange coupled to one outer layer and anti-ferromagnetically exchange coupled to the other outer layer. The ferromagnetic coupling is very strong across an ultra-thin layer of Ta, Hf or Zr of thickness preferably less than 0.4 nm.
摘要翻译：我们描述了利用自旋角动量转移作为改变自由层的磁矩方向的机制的CPP MTJ MRAM元件。该器件包括MgO的隧道势垒层和Cu或Cr的非磁性CPP层，并且利用具有三个铁磁层的新型合成自由层，其在成对配置中相互交换耦合。自由层包括内部铁磁体和两个外部铁磁性层，其中内层被铁磁交换耦合到一个外层并与另一个外层反耦合地进行反铁磁交换。在厚度优选小于0.4nm的Ta，Hf或Zr的超薄层上，铁磁耦合是非常强的。

57. 发明授权

US07999360B2 Underlayer for high performance magnetic tunneling junction MRAM 有权
标题翻译：高性能磁隧道结MRAM底层
公开(公告)号：US07999360B2
公开(公告)日：2011-08-16
申请号：US12589466
申请日：2009-10-23
申请人： Liubo Hong , Cheng Horng , Mao-Min Chen , Ru-Yin Tong
发明人： Liubo Hong , Cheng Horng , Mao-Min Chen , Ru-Yin Tong
IPC分类号： H01L23/552
CPC分类号： H01L43/12 , B82Y10/00 , B82Y25/00 , B82Y40/00 , G01R33/09 , G01R33/093 , G01R33/098 , G11B5/3906 , G11B5/3909 , G11C11/161 , G11C11/1673 , H01F10/30 , H01F10/3254 , H01F10/3259 , H01F10/3272 , H01F10/3295 , H01F41/307 , H01L43/08 , H01L43/10 , Y10T428/1114
摘要： An MRAM structure is disclosed in which the bottom electrode has an amorphous TaN capping layer to consistently provide smooth and dense growth for AFM, pinned, tunnel barrier, and free layers in an overlying MTJ. Unlike a conventional Ta capping layer, TaN is oxidation resistant and has high resistivity to avoid shunting of a sense current caused by redeposition of the capping layer on the sidewalls of the tunnel barrier layer. Alternatively, the α-TaN layer is the seed layer in the MTJ. Furthermore, the seed layer may be a composite layer of NiCr, NiFe, or NiFeCr layer on the oc-TaN layer. An α-TaN capping layer or seed layer can also be used in a TMR read head. An MTJ formed on an α-TaN capping layer has a high MR ratio, high Vb, and a RA similar to results obtained from MTJs based on an optimized Ta capping layer.
摘要翻译：公开了一种MRAM结构，其中底部电极具有无定形TaN覆盖层，以一致地提供在覆盖的MTJ中的AFM，固定，隧道势垒和自由层的平滑且致密的生长。与传统的Ta覆盖层不同，TaN是抗氧化的并且具有高电阻率以避免由于覆盖层在隧道势垒层的侧壁上的再沉积引起的感测电流的分流。或者，α-TaN层是MTJ中的种子层。此外，种子层可以是在oc-TaN层上的NiCr，NiFe或NiFeCr层的复合层。也可以在TMR读取头中使用α-TaN覆盖层或种子层。在α-TaN覆盖层上形成的MTJ具有高的MR比，高的Vb和RA，与基于优化的Ta覆盖层的MTJ获得的结果相似。

58. 发明申请

US20110188305A1 Read disturb free SMT MRAM reference cell circuit 有权
标题翻译：读取无干扰SMT MRAM参考单元电路
公开(公告)号：US20110188305A1
公开(公告)日：2011-08-04
申请号：US12658228
申请日：2010-02-04
申请人： Hsu Kai Yang
发明人： Hsu Kai Yang
IPC分类号： G11C11/14 , G11C7/02 , G11C5/14
CPC分类号： G11C7/02 , G11C11/1653 , G11C11/1659 , G11C11/1673 , G11C11/1675
摘要： An array of SMT MRAM cells has a read reference circuit that provides a reference current that is the sum of a minimum current through a reference SMT MRAM cell programmed with a maximum resistance and a maximum current through an reference SMT MRAM cell programmed with a minimum resistance. The reference current forms an average reference voltage at the reference input of a sense amplifier for reading a data state from selected SMT MRAM cells of the array such that the reference SMT MRAM cells will not be disturbed during a read operation. The read reference circuit compensates for current mismatching in the reference current caused by a second order non matching effect.
摘要翻译：一组SMT MRAM单元具有一个读取参考电路，该参考电流是通过编程具有最大电阻的参考SMT MRAM单元的最小电流和通过最小电阻编程的参考SMT MRAM单元的最大电流之和的总和。参考电流在读出放大器的参考输入处形成平均参考电压，用于从阵列的所选SMT MRAM单元读取数据状态，使得参考SMT MRAM单元在读取操作期间不被干扰。读取参考电路补偿由二阶非匹配效应引起的参考电流中的电流失配。

59. 发明授权

US07986572B2 Magnetic memory capable of minimizing gate voltage stress in unselected memory cells 有权
标题翻译：能够最小化未选择的存储单元中的栅极电压应力的磁存储器
公开(公告)号：US07986572B2
公开(公告)日：2011-07-26
申请号：US12583255
申请日：2009-08-17
申请人： Hsu Kai Yang
发明人： Hsu Kai Yang
IPC分类号： G11C7/00
CPC分类号： G11C11/1697 , G11C11/1655 , G11C11/1657 , G11C11/1659 , G11C11/1675 , G11C13/0002
摘要： Magnetic memory elements such as Phase Change RAM and Spin Moment Transfer MRAM require high programming currents. These high programming currents require high gate to source/drain voltages for the cell transistors controlling these programming currents, which can degrade the reliability of these cell transistors. This invention describes a circuit and method to write information into individual memory cells while minimizing the gate voltage stress in the cell transistors of the memory cells in which no information is being written. The circuit of this invention has a separately controllable word line voltage supply for each row of the memory array and a separately controllable voltage supply for each bit line of the memory array. During the write operation the voltage is raised for the word line of only one row of the array. The bit line voltages are then adjusted so that a 1 is written into the desired cells in that row and a 0 is written into the desired cells in that row.
摘要翻译：诸如相变RAM和自旋转矩MRAM之类的磁存储元件需要高编程电流。这些高编程电流对于控制这些编程电流的单元晶体管需要高的栅极到源极/漏极电压，这可能降低这些单元晶体管的可靠性。本发明描述了一种将信息写入各个存储单元中的电路和方法，同时最小化其中不写入信息的存储单元的单元晶体管中的栅极电压应力。本发明的电路具有针对存储器阵列的每一行的可单独控制的字线电压电源和用于存储器阵列的每个位线的单独可控的电压源。在写入操作期间，只有阵列的一行的字线升高电压。然后调整位线电压，使得将1写入该行中的期望单元，并将0写入该行中期望的单元。

60. 发明授权

US07977111B2 Devices using addressable magnetic tunnel junction array to detect magnetic particles 有权
标题翻译：使用可寻址磁隧道结阵列检测磁性颗粒的装置
公开(公告)号：US07977111B2
公开(公告)日：2011-07-12
申请号：US12009366
申请日：2008-01-18
申请人： Xizeng Shi , Pokang Wang , Hsu Kai Yang
发明人： Xizeng Shi , Pokang Wang , Hsu Kai Yang
IPC分类号： G01N25/18
CPC分类号： G01R33/098 , G01R33/1269 , Y10S436/806
摘要： A magnetic sensor for identifying small superparamagnetic particles bonded to a substrate contains a regular orthogonal array of MTJ cells formed beneath that substrate. A magnetic field imposed on the particle, perpendicular to the substrate, induces a magnetic field that has a component within the MTJ cells that is along the plane of the MTJ free layer. If that free layer has a low switching threshold, the induced field of the particle will create resistance changes in a group of MTJ cells that lie beneath it. These resistance changes will be distributed in a characteristic formation or signature that will indicate the presence of the particle. If the particle's field is insufficient to produce the free layer switching, then a biasing field can be added in the direction of the hard axis and the combination of this field and the induced field allows the presence of the particle to be determined.
摘要翻译：用于识别结合到衬底的小超顺磁性颗粒的磁传感器包含在该衬底下面形成的MTJ电池的规则正交阵列。垂直于衬底施加在颗粒上的磁场诱导磁场，该磁场在MTJ单元内具有沿着MTJ自由层的平面的分量。如果自由层具有低切换阈值，则颗粒的感应场将在其下面的一组MTJ细胞中产生电阻变化。这些电阻变化将分布在表征粒子存在的特征形成或特征中。如果粒子的场不足以产生自由层切换，则可以在硬轴的方向上添加偏置场，并且该场与感应场的组合允许确定粒子的存在。

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