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41. 发明授权

US11415752B2 Optical inspection circuit 有权
公开(公告)号：US11415752B2
公开(公告)日：2022-08-16
申请号：US17057057
申请日：2019-05-14
申请人： Nippon Telegraph and Telephone Corporation
发明人： Hiroshi Fukuda , Toru Miura , Yoshiho Maeda
IPC分类号： G02B6/34 , G02B6/12 , G02B6/124 , G02B6/42 , H01L31/0232 , H01L31/10
摘要： An optical inspection circuit includes an optical circuit to be inspected formed on a substrate, an input optical waveguide optically connected to the optical circuit, and an output optical waveguide optically connected to the optical circuit. The input optical waveguide is connected with a grating coupler for input. The grating coupler is connected with the input optical waveguide via a spot size conversion unit. The output optical waveguide is optically connected with a photodiode.

42. 发明授权

US11415749B2 Optical apparatus and methods of manufacture thereof 有权
公开(公告)号：US11415749B2
公开(公告)日：2022-08-16
申请号：US16975978
申请日：2019-02-27
申请人： OPTOSCRIBE LIMITED
发明人： Nicholas D. Psaila , Anthony Traynor , Rowan Pocock , Paul Mitchell , Graeme Brown , Mark Hesketh
IPC分类号： G02B6/293 , G02B6/13 , G02B6/125 , G02B6/12 , G02B6/124 , G02B6/42 , G02B6/122 , G02B6/30
摘要： Optical apparatus and methods of manufacture thereof An optical apparatus (20) for evanescently coupling an optical signal across an (interface (30) is described. The optical apparatus (20) comprises a first substrate (22) and a second substrate (24). The optical signal is evanescently coupled between a first waveguide (26) formed by laser inscription of the first substrate (22) and a second waveguide (28) of the second substrate (22). The first waveguide (26) comprises a curved section (34) configured to provide evanescent coupling of the optical signal between the first and second waveguides (26, 28) via the interface (30).

43. 发明授权

US11360267B2 Wavelength division multiplexing communication system and adjustment method of wavelength division multiplexing communication system 有权
公开(公告)号：US11360267B2
公开(公告)日：2022-06-14
申请号：US17214579
申请日：2021-03-26
申请人： Mitsubishi Electric Corporation
发明人： Kei Masuyama , Mizuki Shirao
IPC分类号： G02B6/293 , G02B6/28 , G02B6/12 , G02B6/124
摘要： Included are a transmitter and a receiver caused to have a constant temperature. The transmitter includes: a semiconductor optical amplifier having a reflection mirror at a first end thereof; an optical waveguide having a first end coupled to a second end of the semiconductor optical amplifier; a wavelength demultiplexing filter having an input port coupled to a second end of the optical waveguide and a plurality of output ports having constant transmission wavelength intervals; reflection structures to reflect part of light output from the output ports, the reflection structures provided for the respective output ports of the wavelength demultiplexing filter; modulators to modulate light transmitted through the reflection structures, the modulators provided for the respective reflection structures; and a wavelength multiplexing filter having input ports coupled to the respective output ends of the modulators, transmission wavelength intervals of the input ports being identical to the transmission wavelength intervals of the wavelength demultiplexing filter, and having the output port coupled to a first end of an optical fiber. The receiver includes: a wavelength demultiplexing filter having an input port coupled to a second end of the optical fiber and a plurality of output ports having the same transmission wavelength intervals as the transmission wavelength intervals of the wavelength demultiplexing filter and an FSR obtained by multiplying the transmission wavelength interval by the number of the output ports; light receivers to receive light output from the output ports, the light receivers provided for the respective output ports of the wavelength demultiplexing filter; and a temperature controller to control the temperature of the wavelength demultiplexing filter.

44. 发明申请

US20220155519A1 PHOTONIC IC CHIP 有权
公开(公告)号：US20220155519A1
公开(公告)日：2022-05-19
申请号：US17649520
申请日：2022-01-31
申请人： STMicroelectronics S.r.I. , STMicroelectronics (Crolles 2) SAS
发明人： Frédéric Boeuf , Luca Maggi
IPC分类号： G02B6/124 , G02B6/34 , G02B6/43 , G02B6/30 , G02B6/12 , G02B6/136
摘要： A photonic integrated circuit chip includes vertical grating couplers defined in a first layer. Second insulating layers overlie the vertical grating coupler and an interconnection structure with metal levels is embedded in the second insulating layers. A cavity extends in depth through the second insulating layers all the way to an intermediate level between the couplers and the metal level closest to the couplers. The cavity has lateral dimensions such that the cavity is capable of receiving a block for holding an array of optical fibers intended to be optically coupled to the couplers.

45. 发明申请

US20220137293A1 WIDEBAND GRATING COUPLER 有权
公开(公告)号：US20220137293A1
公开(公告)日：2022-05-05
申请号：US17511427
申请日：2021-10-26
申请人： The Chinese University of Hong Kong
发明人： Xuetong ZHOU , Hon Ki TSANG
IPC分类号： G02B6/124 , G02B6/34 , G02B6/293
摘要： An output coupler can be used to couple multiple channels of light from a semiconductor waveguide to an optical fiber for wavelength division multiplexing. To couple light of a wide bandwidth (e.g., equal to or greater than 100 nm), two symmetrical gratings on two sides of a Fabry Perot cavity is used. The two symmetrical gratings are optimized to both reflect light for a Fabry Perot resonator and couple light out of the semiconductor waveguide.

46. 发明授权

US11287571B2 Multiplexer 有权
公开(公告)号：US11287571B2
公开(公告)日：2022-03-29
申请号：US16929405
申请日：2020-07-15
申请人： NATIONAL UNIVERSITY CORPORATION UNIVERSITY OF FUKUI
发明人： Toshio Katsuyama , Akira Nakao
IPC分类号： G02B6/12 , G02B6/26 , H04N9/31 , G02B6/293 , G03B21/20 , G02B6/125 , G02B6/124 , G02B6/122 , G02B6/42 , G02B27/01 , G02B6/00 , G02B26/10
摘要： To provide a multiplexer that makes it possible to achieve a reduction in size and that minimizes the influence of the expansion of laser light on a multiplexing unit. A multiplexer is provided with a plurality of waveguides, multiplexing units that are provided at an intermediate location within the waveguides, and laser light sources, wherein: the first multiplexing unit is arranged at a position that is closest to the laser light sources; and the laser light sources that have an optical axis at a position that is separated from the transmission axis of the visible light that is introduced into the first multiplexing unit are arranged so that the optical axis is inclined with respect to the transmission axis and the outer periphery of laser light that expands at a predetermined expansion angle passes in front of the first multiplexing unit.

47. 发明授权

US11243353B2 Semiconductor device and method of manufacturing 有权
公开(公告)号：US11243353B2
公开(公告)日：2022-02-08
申请号：US16727616
申请日：2019-12-26
申请人： Taiwan Semiconductor Manufacturing Company, Ltd.
发明人： Ying-Hao Kuo , Tien-Yu Huang
IPC分类号： G02B6/12 , G02B6/122 , G02B6/124 , G02B6/136 , G02B6/42 , G02B5/18 , H01L21/311 , H01L21/768
摘要： A semiconductor device includes a substrate, a trench in the substrate, the trench having an inclined sidewall, a reflective layer over the inclined sidewall, a grating structure over the substrate, and a waveguide in the trench. The waveguide is configured to guide optical signals between the grating structure and the reflective layer.

48. 发明申请

US20220019022A1 OPTICAL DEVICE AND PHOTODETECTION SYSTEM 有权
公开(公告)号：US20220019022A1
公开(公告)日：2022-01-20
申请号：US17488391
申请日：2021-09-29
申请人： Panasonic Intellectual Property Management Co., Ltd.
发明人： AKIRA HASHIYA , YASUHISA INADA , MASANORI ERA
IPC分类号： G02B6/124 , G01S7/481
摘要： An optical device includes a first mirror having a first reflecting surface and extending along a first direction, a second mirror having a second reflecting surface that faces the first reflecting surface and extending along the first direction, and an optical waveguide layer, located between the first mirror and the second mirror, that causes light to propagate along the first direction. A transmittance of the first mirror is higher than a transmittance of the second mirror. A reflection spectrum of at least either the first mirror or the second mirror with respect to light arriving from a direction normal to the reflecting surface includes, in a wavelength region in which a reflectance is higher than or equal to 90%, a local maximum point and first and second points of inflection located closer to a long-wavelength side than the local maximum point.

49. 发明申请

US20220003929A1 Optically Active Waveguide and Method of Formation 有权
公开(公告)号：US20220003929A1
公开(公告)日：2022-01-06
申请号：US17481710
申请日：2021-09-22
申请人： Quintessent Inc.
发明人： Brian KOCH , Michael DAVENPORT , Alan LIU
IPC分类号： G02B6/122 , G02B6/136 , G02B6/13 , G02B6/12 , G02B6/10 , G02B6/124
摘要： Integrated-optics systems are presented in which an active-material stack is disposed on a coupling layer in a first region to collectively define an OA waveguide that supports an optical mode of a light signal. The coupling layer is patterned to define a coupling waveguide and a passive waveguide, which are formed as two abutting, optically coupled segments of the coupling layer. The lateral dimensions of the active-material stack are configured to control the shape and vertical position of the optical mode at any location along the length of the OA waveguide. The active-material stack includes a taper that narrows along its length such that the optical mode is located completely in the coupling waveguide where the coupling waveguide abuts the passive waveguide. In some embodiments, the passive layer is optically coupled with the OA waveguide and a silicon waveguide, thereby enabling light to propagate between them.

50. 发明授权

US11156772B2 Photonic semiconductor device and method 有权
公开(公告)号：US11156772B2
公开(公告)日：2021-10-26
申请号：US16995145
申请日：2020-08-17
申请人： Taiwan Semiconductor Manufacturing Co., Ltd.
发明人： Chen-Hua Yu , Hsing-Kuo Hsia , Kuo-Chiang Ting , Pin-Tso Lin , Sung-Hui Huang , Shang-Yun Hou , Chi-Hsi Wu
IPC分类号： G02B6/12 , G02B6/124 , G02B6/136 , G02B6/122
摘要： A method includes forming silicon waveguide sections in a first oxide layer over a substrate, the first oxide layer disposed on the substrate, forming a routing structure over the first oxide layer, the routing structure including one or more insulating layers and one or more conductive features in the one or more insulating layers, recessing regions of the routing structure, forming nitride waveguide sections in the recessed regions of the routing structure, wherein the nitride waveguide sections extend over the silicon waveguide sections, forming a second oxide layer over the nitride waveguide sections, and attaching semiconductor dies to the routing structure, the dies electrically connected to the conductive features.

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