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    • 50. 发明授权
    • Polycrystalline diamond compacts, related products, and methods of manufacture
    • 多晶金刚石压块,相关产品和制造方法
    • US09487847B2
    • 2016-11-08
    • US13648913
    • 2012-10-10
    • US Synthetic Corporation
    • Debkumar MukhopadhyayJair J. Gonzalez
    • B22F7/06C22C26/00E21B10/46
    • C22C26/00B22F7/062B22F2999/00E21B10/46B22F7/06C22C1/1036
    • Embodiments relate to polycrystalline diamond compacts (“PDCs”) and methods of manufacturing such PDCs in which an at least partially leached polycrystalline diamond (“PCD”) table is infiltrated with a low viscosity cobalt-based alloy infiltrant. In an embodiment, a method includes forming a PCD table in the presence of a metal-solvent catalyst in a first high-pressure/high-temperature (“HPHT”) process. The method includes at least partially leaching the PCD table to remove at least a portion of the metal-solvent catalyst therefrom to form an at least partially leached PCD table. The method includes subjecting the at least partially leached PCD table and a substrate to a second HPHT process effective to at least partially infiltrate the at least partially leached PCD table with an alloy infiltrant comprising at least one of a cobalt-based or nickel based alloy infiltrant having a composition at or near a eutectic composition of the alloy infiltrant.
    • 实施例涉及多晶金刚石压块(“PDC”)以及制造这样的PDC的方法,其中至少部分浸出的多晶金刚石(“PCD”)工作台用低粘度钴基合金渗透剂渗透。 在一个实施方案中,一种方法包括在第一高压/高温(“HPHT”)方法中在金属溶剂催化剂存在下形成PCD表。 该方法包括至少部分浸出PCD表以从其中除去至少一部分金属 - 溶剂催化剂以形成至少部分浸出的PCD台。 该方法包括使至少部分浸出的PCD台和基板经受有效的至少部分浸渗的PCD工作台的第二HPHT工艺,所述合金渗透剂包含钴基或镍基合金浸渗剂中的至少一种 具有在合金浸润剂的共晶组成处或附近的组成。