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41. 发明授权

US10239346B2 Method of manufacturing a floor board 有权
公开(公告)号：US10239346B2
公开(公告)日：2019-03-26
申请号：US14678653
申请日：2015-04-03
申请人： Spanolux N.V.-Div.Balterio
发明人： Bruno Vermeulen
IPC分类号： B44C1/20 , B05D7/00 , B05D3/06 , B44C5/04 , B05D3/12 , B44F9/02 , B44C1/22 , B05D1/28 , B05D5/02
摘要： A method of manufacturing a floor board comprises the steps of supplying a panel, printing a curable substance or surface removing substance onto the panel in a predefined pattern for creating an elevation on the panel at the pattern or removing a portion of the surface of the panel at the pattern, respectively, and curing the curable substance or removing any re-action products of the surface removing substance and the panel.

42. 发明授权

US10192719B2 Plasma processing method 有权
公开(公告)号：US10192719B2
公开(公告)日：2019-01-29
申请号：US14962407
申请日：2015-12-08
申请人： Tokyo Electron Limited
发明人： Takamitsu Takayama , Akitoshi Harada , Hideaki Yakushiji
IPC分类号： H01J37/32 , B44C1/22 , C03C15/00 , C03C25/68 , C23F1/00 , H01L21/302 , H01L21/461
摘要： A plasma processing method is provided that includes a step of loading a substrate into a chamber where a plasma process is to be executed, a step of applying a high frequency bias power that has a lower frequency than a high frequency excitation power for plasma excitation to a mounting table on which the substrate is mounted, and a step of applying a DC voltage to an electrostatic chuck configured to electrostatically attract the substrate that is mounted on the mounting table. The step of applying the DC voltage is performed after the step of applying the high frequency bias power.

43. 发明授权

US10181378B2 Magnetic core inductor chip and method of making the same 有权
公开(公告)号：US10181378B2
公开(公告)日：2019-01-15
申请号：US15152809
申请日：2016-05-12
申请人： Wafer Mems Co., LTD.
发明人： Min-Ho Hsiao , Pang-Yen Lee , Yen-Hao Tseng
IPC分类号： B44C1/22 , H01F41/04 , H01L21/70 , H01L27/22 , H01F17/04 , H01L27/01 , H01F17/00
摘要： A magnetic core inductor chip includes a core and a coil. The core is in the form of a single piece of a magnetic material. The coil is deposited on and surrounds the core and has structural characteristics indicative of the coil being formed on the core by deposition techniques. Methods for making the magnetic core inductor chip are also disclosed.

44. 发明授权

US10163625B2 Method for manufacturing semiconductor device, substrate-processing apparatus, and recording medium 有权
公开(公告)号：US10163625B2
公开(公告)日：2018-12-25
申请号：US15386859
申请日：2016-12-21
申请人： HITACHI KOKUSAI ELECTRIC INC.
发明人： Yoshinobu Nakamura , Kiyohiko Maeda , Yoshiro Hirose , Ryota Horiike , Yoshitomo Hashimoto
IPC分类号： H01L21/302 , H01L21/461 , B44C1/22 , C03C15/00 , C03C25/68 , C23F1/00 , H01L21/02 , C23C16/02 , C23C16/34 , C23C16/455 , C23C16/52 , H01L21/306 , H01L21/308 , C23C16/56
摘要： There is provided a method for manufacturing a semiconductor device, including: providing a substrate with an oxide film formed on a surface thereof; pre-processing a surface of the oxide film; and forming a nitride film containing carbon on the surface of the oxide film which has been pre-processed, by performing a cycle a predetermined number of times, the cycle including non-simultaneously performing: supplying a precursor gas to the substrate; supplying a carbon-containing gas to the substrate; and supplying a nitrogen-containing gas to the substrate, or by performing a cycle a predetermined number of times, the cycle including non-simultaneously performing: supplying a precursor gas to the substrate; and supplying a gas containing carbon and nitrogen to the substrate, or by performing a cycle a predetermined number of times, the cycle including non-simultaneously performing: supplying a precursor gas containing carbon to the substrate; and supplying a nitrogen-containing gas to the substrate.

45. 发明授权

US10146128B2 Tool surface nano-structure patterning process 有权
公开(公告)号：US10146128B2
公开(公告)日：2018-12-04
申请号：US15573704
申请日：2016-05-03
申请人： MORPHOTONIX SARL
发明人： Vaida Auzelyte , Veronica Savu
IPC分类号： B44C1/22 , G03F7/00 , G03H1/02
摘要： Method of patterning a surface of an object or a tool with nano and/or micro structure elements having dimensions in a range of 1 nanometer to 1 millimeter, comprising the steps of producing a flexible mask with said nano or micro structure pattern formed on a surface of said flexible mask, chemically activating said surface of the flexible mask and/or said surface to be patterned of the tool, placing said patterned surface of the flexible mask in contact with said surface to be patterned of the object or tool, promoting a covalent bonding reaction between said patterned surface of the flexible mask in contact with said surface to be patterned, removing the flexible mask from the tool whereby a layer of said flexible mask remains bonded to said surface to be patterned of the tool, etching said surface to be patterned of the tool whereby the bonded layer of flexible mask material resists etching. An anti-activation mask defining a periphery of the surface area to be patterned, or peripheries of the surface area to be patterned if there are a plurality of separate portions of surface area to be patterned, is deposited on the flexible mask prior to placing the patterned surface of the flexible mask on the surface to be patterned. The anti-activation mask prevents bonding of the flexible mask to the surface of the object or tool in areas where the anti-activation mask is present.

46. 发明授权

US10144243B2 Method for creating simulated tile wall 有权
公开(公告)号：US10144243B2
公开(公告)日：2018-12-04
申请号：US15046864
申请日：2016-02-18
申请人： Luxury Bath Liners, Inc.
发明人： Mark Domanico
IPC分类号： B44C1/22 , G05B19/4097 , B44C5/04 , B44F11/06 , E04F13/18
摘要： A method of manufacturing a tile sheet for a shower wall or bath enclosure in which a user designs a tile pattern which is stored in a database. An acrylic sheet is placed on a frame and clamped in place. A computer controlled router cuts grout lines in the acrylic sheet which simulates a tile pattern. The finished sheet having the tile pattern is cut and installed on a shower wall. Other designs can be stored in the computer and used to create different tile patterns using the same computer controlled router.

47. 发明授权

US10121654B2 Method for manufacturing semiconductor device, substrate-processing apparatus, and recording medium 有权
公开(公告)号：US10121654B2
公开(公告)日：2018-11-06
申请号：US15386859
申请日：2016-12-21
申请人： HITACHI KOKUSAI ELECTRIC INC.
发明人： Yoshinobu Nakamura , Kiyohiko Maeda , Yoshiro Hirose , Ryota Horiike , Yoshitomo Hashimoto
IPC分类号： H01L21/302 , H01L21/461 , B44C1/22 , C03C15/00 , C03C25/68 , C23F1/00 , H01L21/02 , C23C16/02 , C23C16/34 , C23C16/455 , C23C16/52 , H01L21/306 , H01L21/308 , C23C16/56
摘要： There is provided a method for manufacturing a semiconductor device, including: providing a substrate with an oxide film formed on a surface thereof; pre-processing a surface of the oxide film; and forming a nitride film containing carbon on the surface of the oxide film which has been pre-processed, by performing a cycle a predetermined number of times, the cycle including non-simultaneously performing: supplying a precursor gas to the substrate; supplying a carbon-containing gas to the substrate; and supplying a nitrogen-containing gas to the substrate, or by performing a cycle a predetermined number of times, the cycle including non-simultaneously performing: supplying a precursor gas to the substrate; and supplying a gas containing carbon and nitrogen to the substrate, or by performing a cycle a predetermined number of times, the cycle including non-simultaneously performing: supplying a precursor gas containing carbon to the substrate; and supplying a nitrogen-containing gas to the substrate.

48. 发明授权

US10118729B2 Decorated beverage can tabs 有权
公开(公告)号：US10118729B2
公开(公告)日：2018-11-06
申请号：US14941750
申请日：2015-11-16
申请人： Rexam Beverage Can Company
发明人： Jeffrey L. Lewis
IPC分类号： G09F3/00 , B65D17/00 , B41M5/24 , B23K26/364 , B44C1/22 , B65D17/28
摘要： A decorated tab for a beverage container has a lift end, a nose end, and central webbing. An enclosed portion of the central webbing has a coating. A symbol is located on the enclosed region which is created by selective removal of the coating by a laser ablation. The symbol has a boundary profile defining a perimeter of the symbol generated by a continuous, uninterrupted vectorized laser dot pattern defining regions of ablated coating. The symbol has an interior portion generated by a plurality of pulsed rasterized laser dots defining further regions of ablated coating.

49. 发明授权

US10103008B2 Charged particle beam-induced etching 有权
公开(公告)号：US10103008B2
公开(公告)日：2018-10-16
申请号：US14993665
申请日：2016-01-12
申请人： FEI Company
发明人： Clive D. Chandler
IPC分类号： H01L21/302 , H01L21/461 , B44C1/22 , C03C15/00 , C03C25/68 , C23F1/00 , H01J37/32 , H01L21/02 , H01L39/24 , H01J37/305 , H01L21/306 , H01L21/3065
摘要： A micromachining process includes exposing the work piece surface to a precursor gas including a compound having an acid halide functional group; and irradiating the work piece surface with a beam in the presence of the precursor gas, the precursor gas reacting in the presence of the particle beam to remove material from the work piece surface.

50. 发明申请

US20180277351A1 Asymmetrical RF Drive for Electrode of Plasma Chamber 审中-公开
公开(公告)号：US20180277351A1
公开(公告)日：2018-09-27
申请号：US15924213
申请日：2018-03-17
申请人： Applied Materials, Inc.
发明人： Jozef Kudela , Carl A. Sorensen , Soo Young Choi , John M. White
IPC分类号： H01L21/02 , H01J37/32 , B44C1/22 , C23C16/513
CPC分类号： H01L21/02 , B44C1/227 , C23C16/513 , H01J37/32091 , H01J37/32577 , H01L21/02104
摘要： RF power is coupled to one or more RF drive points (50-56) on an electrode (20-28) of a plasma chamber such that the level of RF power coupled to the RF drive points (51-52,55-56) on the half (61) of the electrode that is closer to the workpiece passageway (12) exceeds the level of RF power coupled to the RF drive points (53-54), if any, on the other half (62) of the electrode. Alternatively, RF power is coupled to one or more RF drive points on an electrode of a plasma chamber such that the weighted mean of the drive point positions is between the center (60) of the electrode and the workpiece passageway. The weighted mean is based on weighting each drive point position by the time-averaged level of RF power coupled to that drive point position. The invention offsets an increase in plasma density that otherwise would exist adjacent the end of the electrode closest to the passageway.

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