专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

41. 发明申请

US20180054172A1 DEVICES AND METHODS RELATED TO ADJUSTING POWER PROVIDED TO POWER AMPLIFIERS 审中-公开
公开(公告)号：US20180054172A1
公开(公告)日：2018-02-22
申请号：US15220753
申请日：2016-07-27
申请人： SKYWORKS SOLUTIONS, INC.
发明人： Sabah KHESBAK , San CHIN , Suhanthan RAJENDRA
IPC分类号： H03F3/195 , H03F1/26 , H01L23/12 , H03F3/213 , H03F3/24 , H05K1/02 , H01L23/66
CPC分类号： H03F3/195 , H01L23/12 , H01L23/66 , H03F1/0211 , H03F1/0288 , H03F1/22 , H03F1/26 , H03F3/213 , H03F3/24 , H03F3/245 , H03F2200/408 , H03F2200/451 , H03F2203/21 , H05K1/0237
摘要： Devices and methods related to adjusting power provided to power amplifiers. In some embodiments, a power amplifier (PA) module may include a PA circuit configured to receive a radio-frequency (RF) signal, the PA circuit coupled to a power source. The PA module may also include a voltage module configured to generate a first voltage based on the RF signal. The PA module may further include a comparison module coupled to the voltage module and to the power source, the comparison module configured to adjust an output voltage of the power source based on the first voltage and a second voltage.

42. 发明授权

US09899963B2 Power amplification module 有权
公开(公告)号：US09899963B2
公开(公告)日：2018-02-20
申请号：US15079960
申请日：2016-03-24
申请人： Murata Manufacturing Co., Ltd.
发明人： Tsuyoshi Sato , Kiichiro Takenaka
IPC分类号： H03K5/22 , H03F1/26 , H03F3/19 , H03F1/02 , H03F3/24 , H03F3/68
CPC分类号： H03F1/26 , H03F1/0222 , H03F1/0227 , H03F3/19 , H03F3/245 , H03F3/68 , H03F2200/102 , H03F2200/105 , H03F2200/451
摘要： Provided is a power amplification module that includes: a first power amplifier that amplifies a first signal and outputs a second signal; and a first noise removing circuit that is inputted with a first voltage supplied from a DC-DC converter, removes noise from the first voltage in order to generate a second voltage, and outputs the second voltage as a power supply voltage of the first power amplifier.

43. 发明申请

US20180034431A1 Integrated Circuit Arrangement for a Microphone, Microphone System and Method for Adjusting One or More Circuit Parameters of the Microphone System 审中-公开
公开(公告)号：US20180034431A1
公开(公告)日：2018-02-01
申请号：US15548371
申请日：2015-02-27
申请人： TDK Corporation
发明人： Gino Rocca , Tomasz Hanzlik
IPC分类号： H03G3/30 , H03F1/26 , H03F3/187 , H04R3/00 , H04R29/00
CPC分类号： H03G3/3026 , H03F1/0272 , H03F1/26 , H03F1/304 , H03F3/187 , H03F2200/03 , H03F2200/15 , H03F2200/24 , H03F2200/411 , H03F2200/511 , H03F2200/519 , H03F2200/525 , H04R3/00 , H04R29/004 , H04R2201/003
摘要： An integrated circuit arrangement for a microphone, a microphone system and a method for adjusting circuit parameters of the microphone are disclosed. In an embodiment an integrated circuit includes an amplifier circuit with a first switchable network circuit for adjusting an amplifier current of the amplifier circuit, the first switchable network circuit comprising a plurality of switches (SW1, . . . ,SWx) each coupled with a first control port of the first switchable network circuit and a control unit coupled with the first control port of the first switchable network circuit and configured to control a setting of the respective switches (SW1, . . . ,SWx) of the first switchable network circuit.

44. 发明申请

US20180034420A1 AMPLIFIER ADAPTED FOR NOISE SUPPRESSION 审中-公开
公开(公告)号：US20180034420A1
公开(公告)日：2018-02-01
申请号：US15730133
申请日：2017-10-11
申请人： Telefonaktiebolaget LM Ericsson (publ)
发明人： Daniele Mastantuono , Sven Mattisson
IPC分类号： H03F1/26 , H03F1/48 , H03F3/45 , H03F3/60 , H03F1/02 , H03F1/32 , H03F3/193 , H04B1/12
CPC分类号： H03F1/26 , H03F1/0205 , H03F1/3211 , H03F1/483 , H03F3/193 , H03F3/45179 , H03F3/607 , H03F2200/06 , H03F2200/294 , H03F2200/333 , H03F2200/451 , H03F2203/45306 , H03F2203/45318 , H04B1/12
摘要： Systems and methods of noise suppression by an amplifier are presented. In one exemplary embodiment, an amplifier comprises first and fourth transistors configured as a first differential pair of transistors in a common-gate configuration, and second and third transistors configured as a second differential pair of transistors in a common-source configuration. The first and fourth transistors are operative to receive, from a differential input, by a source of each first and fourth transistor, a differential input signal. Further, a drain of each first and fourth transistor is coupled to respective first and second outputs configured as a differential output. The second and third transistors are operative to output, from a drain of each second and third transistor, to the respective second and first outputs, a differential output signal. Further, a gate of each second and third transistor is coupled to the respective first and second inputs.

45. 发明申请

US20180026584A1 NOISE CANCELLING BASEBAND AMPLIFIER 审中-公开
公开(公告)号：US20180026584A1
公开(公告)日：2018-01-25
申请号：US15723059
申请日：2017-10-02
申请人： QUALCOMM Incorporated
发明人： Joung Won Park , Namsoo Kim
IPC分类号： H03F1/26 , H03F3/68 , H03F3/19 , H03F3/45
CPC分类号： H03F1/26 , H03F3/19 , H03F3/45071 , H03F3/45475 , H03F3/68 , H03F2200/135 , H03F2200/451 , H03F2203/45138 , H03F2203/45528
摘要： An apparatus includes a first amplifier having a first feedback resistance and an output configured to be coupled to a first input of a second amplifier having a second feedback resistance. The apparatus includes a third amplifier coupled to an input of the first amplifier and having an output configured to be coupled to a second input of the second amplifier.

46. 发明授权

US09866179B1 Multipath linear low noise amplifier 有权
公开(公告)号：US09866179B1
公开(公告)日：2018-01-09
申请号：US15480291
申请日：2017-04-05
申请人： SiTune Corporation
发明人： Saeid Mehrmanesh , Vahid M. Toosi , Marzieh Veyseh
IPC分类号： H03F1/26 , H03G3/20 , H03F3/189
CPC分类号： H03F1/26 , H03F3/189 , H03F2200/294 , H03F2200/411 , H03F2200/451 , H03F2200/465 , H03G3/20
摘要： The present disclosure relates to methods and systems for LNAs with high linearity and low noise for wideband receivers that receive high dynamic range signals. A multi-stage multipath LNA is disclosed in which outputs from various stages are amplified with variable gains and combined in parallel. A smart gain control unit evaluates the noise and non-linearity characteristics associated with each gain stage to configure the variable gains for the various stages to generate an overall LNA gain that minimizes the overall noise and/or non-linearity characteristics of the LNA while ensuring that the overall gain for the LNA satisfies the desired gain. The variable gains may be configured to change smoothly over the dynamic range of the input signal. Noise is minimized by reducing additional gain stages and by the smooth change in gain when switching between stages. High linearity performance is maintained by minimizing the number of gain stages combined.

47. 发明授权

US09866178B2 Radio frequency circuitr having an integrated harmonic filter and a radio frequency circuit having transistors of different threshold voltages 有权
公开(公告)号：US09866178B2
公开(公告)日：2018-01-09
申请号：US15268597
申请日：2016-09-18
申请人： DSP Group LTD.
发明人： Sergey Anderson
IPC分类号： H03F3/191 , H03F1/26 , H01L23/66 , H04L27/00 , H04B1/40 , H03F3/213 , H03F3/195 , H03F3/21 , B82Y10/00 , B82Y40/00 , H03F1/02 , H03F3/24
CPC分类号： H03F1/26 , B82Y10/00 , B82Y40/00 , H01L23/66 , H01L2223/6611 , H01L2223/6672 , H01L2224/48091 , H01L2224/49175 , H03F1/0216 , H03F1/0227 , H03F1/0238 , H03F3/195 , H03F3/211 , H03F3/213 , H03F3/245 , H03F2200/294 , H03F2200/451 , H03F2200/504 , H03F2203/21106 , H04B1/40 , H04L27/0002 , H01L2924/00014
摘要： An integrated circuit that includes a die with an active radio frequency (RF) unit embedded thereon; a first port for receiving an output signal from the active RF unit; a harmonic filter that comprises a first harmonic filter inductor; and a first RF inductive load that is electrically coupled to the first port and is magnetically coupled to the first harmonic filter inductor.

48. 发明授权

US09847758B2 Low noise amplifier 有权
公开(公告)号：US09847758B2
公开(公告)日：2017-12-19
申请号：US15278949
申请日：2016-09-28
申请人： SOCIONEXT INC.
发明人： Takahiro Bokui , Hiroshi Kimura
IPC分类号： H03F3/45 , H03F1/26 , H03F1/02 , H03F1/32
CPC分类号： H03F1/26 , H03F1/0205 , H03F1/3211 , H03F3/45 , H03F3/45071 , H03F3/45179 , H03F3/45183 , H03F3/45197 , H03F3/45206 , H03F2200/294 , H03F2200/513 , H03F2200/555 , H03F2203/45494
摘要： A low noise amplifier includes: first and seventh transistors configured to respectively receive first and second input signals; second, third, and fifth transistors connected to the first transistor; eighth, ninth, and eleventh transistors connected to the seventh transistor; a third resistive element; fourth and tenth transistors respectively connected to the third and ninth transistors; sixth and twelfth transistors respectively connected to second and first output terminals; and first and second resistive elements.

49. 发明授权

US09806677B2 Amplifier adapted for noise suppression 有权
公开(公告)号：US09806677B2
公开(公告)日：2017-10-31
申请号：US14913466
申请日：2015-03-16
申请人： Telefonaktiebolaget L M Ericsson (publ)
发明人： Daniele Mastantuono , Sven Mattisson
IPC分类号： H03F3/45 , H03F1/26 , H03F1/32 , H03F3/193 , H03F1/02 , H03F1/48 , H03F3/60 , H04B1/12
CPC分类号： H03F1/26 , H03F1/0205 , H03F1/3211 , H03F1/483 , H03F3/193 , H03F3/45179 , H03F3/607 , H03F2200/06 , H03F2200/294 , H03F2200/333 , H03F2200/451 , H03F2203/45306 , H03F2203/45318 , H04B1/12
摘要： An amplifier (100) adapted for noise suppression comprises a first input (102) for receiving a first input signal and a second input (104) for receiving a second input signal, the first and second input signals constituting a differential pair. A first output (106) delivers a first output signal and a second output (108) delivers a second output signal, the first and second output signals constituting a differential pair. A first transistor (MCG1) has a first drain (110) coupled to the first output (106) such that all signal current, except parasitic losses, flowing through the first drain (110) flows through the first output (106), and the first transistor (MCG1) further having a first source (112) coupled to the first input (102). A second transistor (MCS1) has a second gate (116) coupled to the first input (102), a second drain (118) coupled to the second output (108) such that all signal current, except parasitic losses, flowing through the second drain (118) flows through the second output (108), and the second transistor (MCS1) further having a second source (120) coupled to a first voltage rail (122). A third transistor (MCS2) has a third gate (124) coupled to the second input (104), a third drain (126) coupled to the first output (106) such that all signal current, except parasitic losses, flowing through the third drain (126) flows through the first output (106), and the third transistor (MCS2) further having a third source (128) coupled to the first voltage rail (122). A fourth transistor (MCG2) has a fourth drain (130) coupled to the second output (108) such that all signal current, except parasitic losses, flowing through the fourth drain (130) flows through the second output (108), and the fourth transistor (MCG2) further having a fourth source (132) coupled to the second input (104). A first load (ZL1) is coupled between the first output (106) and a second voltage rail (136). A second load (ZL2) is coupled between the second output (108) and the second voltage rail (136). A first inductive element (L1) is coupled between the first input (102) and a third voltage rail (138), and a second inductive element (L2) is coupled between the second input (104) and the third voltage rail (138). Transconductance of the first transistor (MCG1) is substantially equal to transconductance of the fourth transistor (MCG2), within ±5%, and transconductance of the second transistor (MCS1) is substantially equal to transconductance of the third transistor (MCS2), within ±5%.

50. 发明申请

US20170288614A1 HIGH-FREQUENCY SIGNAL AMPLIFIER CIRCUIT, POWER AMPLIFIER MODULE, FRONT-END CIRCUIT, AND COMMUNICATION APPARATUS 有权
公开(公告)号：US20170288614A1
公开(公告)日：2017-10-05
申请号：US15472722
申请日：2017-03-29
申请人： Murata Manufacturing Co., Ltd.
发明人： Hidenori Obiya , Reiji Nakajima
IPC分类号： H03F1/26 , H03F3/213 , H03F1/56 , H04B1/16 , H03F3/195
CPC分类号： H03F1/26 , H03F1/0261 , H03F1/56 , H03F3/195 , H03F3/213 , H03F3/245 , H03F2200/165 , H03F2200/171 , H03F2200/222 , H03F2200/246 , H03F2200/318 , H03F2200/387 , H03F2200/411 , H03F2200/451 , H03F2200/555 , H04B1/0458 , H04B1/16
摘要： A high-frequency signal amplifier circuit is used in a front-end circuit configured to propagate a high-frequency transmission signal and a high-frequency reception signal, and includes an amplifier transistor configured to amplify the high-frequency transmission signal; a bias circuit configured to supply a bias to a signal input end of the amplifier transistor; and a ferrite bead, one end of which is connected to a bias output end of the bias circuit and the other end of which is connected to the signal input end of the amplifier transistor, having characteristics in which impedance in a difference frequency band between the high-frequency transmission signal and the high-frequency reception signal is higher than impedance in DC.

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式