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    • 45. 发明申请
    • ELECTRODE CONTACTS
    • 电极接触
    • US20170040564A1
    • 2017-02-09
    • US15296424
    • 2016-10-18
    • Ignis Innovation Inc.
    • GHOLAMREZA CHAJI
    • H01L51/52
    • H01L51/5212H01L27/3248H01L51/0021H01L51/5209H01L51/5215H01L51/5225H01L51/5228H01L51/5234H01L2251/5315
    • A device structure providing contact to conductive layers via a deep trench structure is disclosed. The device includes a first dielectric layer including a first opening. A first conductive layer is deposited over the first dielectric layer and the first opening. A second dielectric layer is deposited on the first conductive layer. The second dielectric layer includes a second opening. A second conductive layer is deposited over the second dielectric layer and the first and second openings. A semiconductor layer is deposited on the second dielectric layer such that the semiconductor layer is not continuous on at least part of the walls of the first or second openings. A top electrode layer is deposited on the semiconductor layer. The top electrode layer is in contact with the second conductive layer on at least part of the walls of the first or second openings.
    • 公开了一种通过深沟槽结构提供与导电层接触的器件结构。 该装置包括包括第一开口的第一电介质层。 第一导电层沉积在第一介电层和第一开口上。 第二介电层沉积在第一导电层上。 第二介电层包括第二开口。 在第二介电层和第一和第二开口上沉积第二导电层。 半导体层沉积在第二介电层上,使得半导体层在第一或第二开口的壁的至少一部分上不连续。 顶部电极层沉积在半导体层上。 顶部电极层在第一或第二开口的壁的至少一部分上与第二导电层接触。