专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

41. 发明申请

US20110154663A1 Memory Device 有权
标题翻译：存储设备
公开(公告)号：US20110154663A1
公开(公告)日：2011-06-30
申请号：US13041955
申请日：2011-03-07
申请人： David Sargent , Jon Maimon
发明人： David Sargent , Jon Maimon
IPC分类号： H05K3/10
CPC分类号： H01L45/06 , G11C13/0004 , H01L45/1233 , H01L45/1293 , H01L45/142 , H01L45/143 , H01L45/144 , H01L45/148 , Y10T29/49155
摘要： A memory or switching device includes a mesa and a first electrode conforming to said mesa. The device also includes a second electrode and a phase-change or switching material disposed between said first and second electrodes. The phase-change or switching material is in electrical communication with the first and second electrodes at a first contact region and a second contact region respectively. Also described is a method for making a memory or switching device. The method includes providing a first insulator and configuring the first insulator to provide a mesa. A first conductive layer is provided conforming to the mesa. A phase-change or switching material is provided over a portion of the first conductive layer, and a second conductive layer is provided over the phase-change or switching material.
摘要翻译：存储器或开关器件包括台面和符合所述台面的第一电极。该装置还包括设置在所述第一和第二电极之间的第二电极和相变或开关材料。相变或开关材料分别在第一接触区域和第二接触区域处与第一和第二电极电连通。还描述了一种用于制造存储器或开关装置的方法。该方法包括提供第一绝缘体并配置第一绝缘体以提供台面。提供符合台面的第一导电层。相变或开关材料设置在第一导电层的一部分上，并且第二导电层设置在相变或开关材料上。

42. 发明授权

US07923285B2 Method for forming self-aligned thermal isolation cell for a variable resistance memory array 有权
标题翻译：用于形成用于可变电阻存储器阵列的自对准热隔离单元的方法
公开(公告)号：US07923285B2
公开(公告)日：2011-04-12
申请号：US12351692
申请日：2009-01-09
申请人： Erh-Kun Lai , ChiaHua Ho , Kuang Yeu Hsieh
发明人： Erh-Kun Lai , ChiaHua Ho , Kuang Yeu Hsieh
IPC分类号： H01L21/00
CPC分类号： H01L45/06 , H01L45/1233 , H01L45/1293 , H01L45/144 , H01L45/1683
摘要： A non-volatile memory with a self-aligned RRAM element includes a lower electrode element, generally planar in form, having an inner contact surface; an upper electrode element, spaced from the lower electrode element; a containment structure extends between the upper electrode element and the lower electrode element, with a sidewall spacer element having a generally funnel-shaped central cavity with a central aperture; and a spandrel element positioned between the sidewall spacer element and the lower electrode. A RRAM element extends between the lower electrode element and the upper electrode, occupying at least a portion of the sidewall spacer element central cavity and projecting from the sidewall spacer terminal edge toward and making contact with the lower electrode. In this manner, the spandrel element inner surface is spaced from the RRAM element to define a thermal isolation cell adjacent the RRAM element.
摘要翻译：具有自对准RRAM元件的非易失性存储器包括具有内接触表面的大体平面形状的下电极元件; 与所述下电极元件间隔开的上电极元件; 容纳结构在上电极元件和下电极元件之间延伸，侧壁间隔元件具有大致漏斗形的具有中心孔的中心腔; 以及位于侧壁间隔元件和下电极之间的突出元件。 RRAM元件在下电极元件和上电极之间延伸，占据侧壁间隔件元件中心腔的至少一部分并且从侧壁间隔件端子边缘朝向和与下电极接触。以这种方式，伞形元件内表面与RRAM元件间隔开以限定与RRAM元件相邻的热隔离单元。

43. 发明授权

US07824951B2 Method of fabricating an integrated circuit having a memory including a low-k dielectric material 有权
标题翻译：制造具有包含低k电介质材料的存储器的集成电路的方法
公开(公告)号：US07824951B2
公开(公告)日：2010-11-02
申请号：US12050727
申请日：2008-03-18
申请人： Thomas Happ , Shoaib Zaidi
发明人： Thomas Happ , Shoaib Zaidi
IPC分类号： H01L21/00
CPC分类号： G11C13/0004 , H01L45/06 , H01L45/1233 , H01L45/126 , H01L45/1293 , H01L45/144 , H01L45/148 , H01L45/1683
摘要： The present invention includes a memory cell device and method that includes a memory cell, a first electrode, a second electrode, phase-change material and an isolation material. The phase-change material is coupled adjacent the first electrode. The second electrode is coupled adjacent the phase-change material. The isolation material adjacent the phase-change material thermally isolates the phase-change material.
摘要翻译：本发明包括存储单元装置和方法，其包括存储单元，第一电极，第二电极，相变材料和隔离材料。相变材料与第一电极相邻。第二电极与相变材料相邻。相变材料附近的隔离材料使相变材料隔离。

44. 发明授权

US07723717B2 Semiconductor memory device and fabrication method thereof 有权
标题翻译：半导体存储器件及其制造方法
公开(公告)号：US07723717B2
公开(公告)日：2010-05-25
申请号：US11826870
申请日：2007-07-19
申请人： Tsutomu Hayakawa
发明人： Tsutomu Hayakawa
IPC分类号： H01L29/00 , H01L47/00 , H01L29/04
CPC分类号： H01L45/143 , H01L27/2436 , H01L45/06 , H01L45/122 , H01L45/126 , H01L45/1293 , H01L45/144 , H01L45/1683 , Y10S438/90
摘要： A semiconductor memory device comprises a heater electrode, a phase change portion, and an upper electrode. The phase change portion is connected to the heater electrode in a first direction. The upper electrode has an upper surface, a lower surface and a hole. The hole pierces the upper electrode between the upper and the lower surfaces in the first direction. The hole has an inner wall, which is connected to the phase change portion in a second direction perpendicular to the first direction.
摘要翻译：半导体存储器件包括加热器电极，相变部分和上电极。相变部分沿第一方向连接到加热器电极。上电极具有上表面，下表面和孔。孔在第一方向上在上表面和下表面之间刺穿上电极。孔具有内壁，该内壁在与第一方向垂直的第二方向上连接到相变部。

45. 发明申请

US20100108979A1 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF 有权
标题翻译：半导体器件及其制造方法
公开(公告)号：US20100108979A1
公开(公告)日：2010-05-06
申请号：US12608055
申请日：2009-10-29
申请人： Byung-Ho Lee
发明人： Byung-Ho Lee
IPC分类号： H01L45/00 , H01L21/06
CPC分类号： H01L21/324 , H01L27/2436 , H01L45/06 , H01L45/1226 , H01L45/1293 , H01L45/143 , H01L45/144 , H01L45/148 , H01L45/1641 , H01L45/1683
摘要： Embodiments relate to a semiconductor device, and more particularly, to a semiconductor device and a manufacturing method thereof that can reduce RC delay within the semiconductor device. Embodiments provide a semiconductor device including: a first interlayer dielectric layer formed over the a semiconductor substrate, a first metal wire and a second metal wire formed over the first interlayer dielectric layer, a second interlayer dielectric layer formed over the first and second metal wires, and a phase change material layer formed between the first and second metal wires.
摘要翻译：实施例涉及半导体器件，更具体地，涉及可以减少半导体器件内的RC延迟的半导体器件及其制造方法。实施例提供一种半导体器件，包括：形成在半导体衬底上的第一层间电介质层，形成在第一层间电介质层上的第一金属线和第二金属线，形成在第一和第二金属线上的第二层间电介质层，以及形成在第一和第二金属线之间的相变材料层。

46. 发明申请

US20100068878A1 THIN FILM FUSE PHASE CHANGE CELL WITH THERMAL ISOLATION PAD AND MANUFACTURING METHOD 有权
标题翻译：薄膜保险丝相变电池与热隔离垫片及制造方法
公开(公告)号：US20100068878A1
公开(公告)日：2010-03-18
申请号：US12622350
申请日：2009-11-19
申请人： Hsiang-Lan Lung
发明人： Hsiang-Lan Lung
IPC分类号： H01L21/28
CPC分类号： H01L45/144 , G11C13/0004 , H01L27/2436 , H01L45/06 , H01L45/1226 , H01L45/1293 , H01L45/148 , H01L45/1625 , H01L45/1641 , H01L45/1675
摘要： A memory device comprising a first electrode having a top side, a second electrode having a top side and an insulating member between the first electrode and the second electrode. The insulating member has a thickness between the first and second electrodes near the top side of the first electrode and the top side of the second electrode extends outwardly from the top sides of the first and second electrodes defining a wall of insulating material having top side. A bridge of memory material crosses the insulating member over the top of the wall, and defines an inter-electrode path between the first and second electrodes across the insulating member. An array of such memory cells is provided. The bridge comprises an active layer of memory material on the top side of the wall, having at least two solid phases and a layer of thermal insulating material overlying the memory material having thermal conductivity less than a thermal conductivity of the first and second electrodes.
摘要翻译：一种存储器件，包括具有顶侧的第一电极，具有顶侧的第二电极和位于第一电极和第二电极之间的绝缘构件。绝缘构件具有在第一电极的顶侧附近的第一和第二电极之间的厚度，并且第二电极的顶侧从第一和第二电极的顶侧向外延伸，限定具有顶侧的绝缘材料的壁。记忆材料桥跨越顶部的绝缘构件，并且在绝缘构件之间限定第一和第二电极之间的电极间路径。提供这样的存储单元阵列。该桥包括在壁的顶侧上的存储材料的有源层，具有至少两个固相和覆盖存储材料的绝热材料层，其具有小于第一和第二电极的热导率的导热性。

47. 发明授权

US07663909B2 Integrated circuit having a phase change memory cell including a narrow active region width 失效
标题翻译：具有包括窄有源区宽度的相变存储单元的集成电路
公开(公告)号：US07663909B2
公开(公告)日：2010-02-16
申请号：US11483873
申请日：2006-07-10
申请人： Jan Boris Philipp , Thomas Happ
发明人： Jan Boris Philipp , Thomas Happ
IPC分类号： G11C11/00
CPC分类号： H01L45/06 , H01L27/2436 , H01L45/1233 , H01L45/1246 , H01L45/1293 , H01L45/144 , H01L45/148 , H01L45/1675
摘要： A memory cell includes a first electrode and an opposing second electrode, and a memory stack between the first and second electrodes. The memory stack includes a first layer of thermal isolation material contacting the first electrode, a second layer of thermal isolation material contacting the second electrode, and a phase change material between the first layer of thermal isolation material and the second layer of thermal isolation material. In this regard, the phase change material defines an active region width that is less than a width of either of the first layer of thermal isolation material and the second layer of thermal isolation material.
摘要翻译：存储单元包括第一电极和相对的第二电极，以及在第一和第二电极之间的存储器堆叠。存储器堆叠包括接触第一电极的第一层隔热材料，与第二电极接触的第二层热隔离材料，以及第一层热隔离材料层与第二层热隔离材料之间的相变材料。在这方面，相变材料限定有效区宽度小于热隔离材料第一层和第二隔热层之一的宽度。

48. 发明申请

US20100029062A1 PROGRAMMABLE RESISTIVE MEMORY CELL WITH SELF-FORMING GAP 有权
标题翻译：可编程电容记忆体与自我形成的差距
公开(公告)号：US20100029062A1
公开(公告)日：2010-02-04
申请号：US12576099
申请日：2009-10-08
申请人： Hsiang Lan LUNG
发明人： Hsiang Lan LUNG
IPC分类号： H01L21/30
CPC分类号： H01L27/2436 , H01L45/06 , H01L45/1226 , H01L45/1233 , H01L45/1293 , H01L45/144 , H01L45/1675
摘要： A memory device has a first electrode, a second electrode, and memory material defining an inter-electrode current path between the first electrode and the second electrode. A gap is formed by shrinkage of the shrinkable material between the memory material and a shrinkable material next to the memory material.
摘要翻译：存储器件具有第一电极，第二电极和限定第一电极和第二电极之间的电极间电流路径的存储材料。存储材料与存储材料旁边的可收缩材料之间的可收缩材料的收缩形成间隙。

49. 发明授权

US07642123B2 Thermally insulated phase change memory manufacturing method 有权
标题翻译：绝热相变存储器制造方法
公开(公告)号：US07642123B2
公开(公告)日：2010-01-05
申请号：US12173299
申请日：2008-07-15
申请人： Hsiang-Lan Lung
发明人： Hsiang-Lan Lung
IPC分类号： H01L21/00
CPC分类号： H01L45/06 , H01L27/2436 , H01L45/1233 , H01L45/126 , H01L45/1293 , H01L45/143 , H01L45/144 , H01L45/148 , H01L45/1675 , Y10S438/90
摘要： A thermally insulated memory device includes a memory cell, the memory cell having electrodes with a via extending therebetween, a thermal insulator within the via and defining a void extending between the electrode surfaces. A memory material, such as a phase change material, is within the void and electrically couples the electrodes to create a memory material element. The thermal insulator helps to reduce the power required to operate the memory material element. An electrode may contact the outer surface of a plug to accommodate any imperfections, such as the void-type imperfections, at the plug surface. Methods for making the device and accommodating plug surface imperfections are also disclosed.
摘要翻译：一种绝热存储器件包括一个存储单元，该存储单元具有一个具有在其间延伸的通孔的电极，该通孔内的一个绝热体，并限定一个在电极表面之间延伸的空隙。诸如相变材料的记忆材料在空隙内并且电耦合电极以产生记忆材料元件。热绝缘体有助于减少操作记忆材料元件所需的功率。电极可以接触塞子的外表面以适应插塞表面处的任何缺陷，例如空隙型缺陷。还公开了用于制造装置和适应插头表面缺陷的方法。

50. 发明申请

US20090305460A1 Programmable Via Devices with Air Gap Isolation 有权
标题翻译：具有空气间隙隔离的可编程通孔器件
公开(公告)号：US20090305460A1
公开(公告)日：2009-12-10
申请号：US12544964
申请日：2009-08-20
申请人： Kuan-Neng Chen , Lia Krusin-Elbaum , Dennis M. Newns , Sampath Purushothaman
发明人： Kuan-Neng Chen , Lia Krusin-Elbaum , Dennis M. Newns , Sampath Purushothaman
IPC分类号： H01L21/06
CPC分类号： H01L45/06 , H01L28/20 , H01L45/1206 , H01L45/122 , H01L45/1286 , H01L45/1293 , H01L45/144 , H01L45/148 , H01L45/1683
摘要： Programmable via devices and methods for the fabrication thereof are provided. In one aspect, a programmable via device is provided. The programmable via device comprises a first dielectric layer; a heater over the first dielectric layer; an air gap separating at least a portion of the heater from the first dielectric layer; an isolation layer over the first dielectric layer covering at least a portion of the heater; a capping layer over a side of the isolation layer opposite the first dielectric layer; at least one programmable via extending through the capping layer and at least a portion of the isolation layer and in contact with the heater, the programmable via comprising at least one phase change material; a conductive cap over the programmable via; a second dielectric layer over a side of the capping layer opposite the isolation layer; a first conductive via and a second conductive via, each extending through the second dielectric layer, the capping layer and at least a portion of the isolation layer and in contact with the heater; and a third conductive via extending through the second dielectric layer and in contact with the conductive cap.
摘要翻译：提供可编程的器件及其制造方法。在一个方面，提供了可编程通路装置。可编程通孔装置包括第一介电层; 第一介电层上的加热器; 将所述加热器的至少一部分与所述第一介电层分开的气隙; 覆盖所述加热器的至少一部分的所述第一介电层上的隔离层; 在所述隔离层的与所述第一介电层相对的一侧上的覆盖层; 至少一个可编程通道，其延伸穿过所述封盖层和所述隔离层的至少一部分并与所述加热器接触，所述可编程通孔包括至少一个相变材料; 可编程通孔上的导电盖; 在覆盖层的与隔离层相对的一侧上的第二电介质层; 第一导电通孔和第二导电通孔，每个延伸穿过第二介电层，封盖层和至少一部分隔离层并与加热器接触; 以及延伸穿过所述第二介电层并与所述导电盖接触的第三导电通孔。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式