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41. 发明授权

US09040312B2 Method for producing ferroelectric thin film 有权
标题翻译：铁电薄膜的制造方法
公开(公告)号：US09040312B2
公开(公告)日：2015-05-26
申请号：US14061035
申请日：2013-10-23
申请人： MITSUBISHI MATERIALS CORPORATION
发明人： Shintaro Iida , Hideaki Sakurai
IPC分类号： H01L21/00 , H01L41/39 , H01L21/02 , H01L49/02 , H01L41/318
CPC分类号： H01L41/39 , H01L21/02197 , H01L21/02282 , H01L21/02315 , H01L28/55 , H01L28/65 , H01L41/318
摘要： It is possible to produce a ferroelectric thin film controlled to have the preferential crystal orientation in the (100) plane with a simple process without providing a seed layer or a buffer layer. A ferroelectric thin film is produced on a lower electrode by irradiating a surface of the lower electrode of a substrate having the lower electrode where the crystal plane is oriented in a (111) axis direction, with an atmospheric pressure plasma, coating a composition for forming a ferroelectric thin film on the lower electrode, and heating and crystallizing the coated composition.
摘要翻译：可以在不提供种子层或缓冲层的情况下，以简单的工艺制造控制在（100）平面中具有优先晶体取向的铁电薄膜。通过用大气压等离子体照射具有在（111）轴方向取向晶体面的下电极的基板的下电极的表面，在下电极上形成铁电薄膜，涂覆用于形成的组合物在下电极上形成铁电薄膜，并加热和结晶涂层组合物。

42. 发明申请

US20150028720A1 ELASTIC WAVE DEVICE AND METHOD FOR PRODUCING THE SAME 有权
标题翻译：弹性波装置及其制造方法
公开(公告)号：US20150028720A1
公开(公告)日：2015-01-29
申请号：US14483357
申请日：2014-09-11
申请人： Murata Manufacturing Co., Ltd.
发明人： Hajime KANDO
IPC分类号： H03H9/25 , H01L41/08 , H01L41/083 , H01L41/312 , H01L41/39 , H01L41/253 , H01L41/29 , H01L41/314 , H01L41/187 , H01L41/277
CPC分类号： H03H9/25 , H01L41/0805 , H01L41/083 , H01L41/1873 , H01L41/253 , H01L41/277 , H01L41/29 , H01L41/312 , H01L41/314 , H01L41/39 , H03H3/10 , H03H9/02559 , H03H9/02574
摘要： An elastic wave device includes a lithium niobate film, a supporting substrate, a high-acoustic-velocity film located on the supporting substrate and configured so that the acoustic velocity of a propagating bulk wave is higher than the acoustic velocity of an elastic wave that propagates on the lithium niobate film, a low-acoustic-velocity film stacked on the high-acoustic-velocity film and configured so that the acoustic velocity of the propagating bulk wave is lower than the acoustic velocity of the bulk wave that propagates in the lithium niobate film, the lithium niobate film being stacked on the low-acoustic-velocity film, and an IDT electrode located on either side of the lithium niobate film. When the lithium niobate film has Euler angles of (0°±5°, θ, 0°), θ is in the range of about 0° to about 8° and about 57° to about 180°.
摘要翻译：弹性波装置包括铌酸锂薄膜，支撑基板，位于支撑基板上的高音速薄膜，其构造成使得传播体波的声速高于传播的弹性波的声速在铌酸锂薄膜上，叠层在高声速膜上的低声速膜，其构造使得传播体波的声速低于在铌酸锂中传播的体波的声速膜，铌酸锂薄膜堆叠在低声速膜上，以及位于铌酸锂薄膜两侧的IDT电极。当铌酸锂薄膜具有欧拉角（0°±5°，θ= 0°）时，在约0°至约8°和约57°至约180°的范围内。

43. 发明申请

US20140068904A1 METHOD FOR MANUFACTURING PIEZOELECTRIC DEVICE 有权
标题翻译：制造压电器件的方法
公开(公告)号：US20140068904A1
公开(公告)日：2014-03-13
申请号：US14041114
申请日：2013-09-30
申请人： NGK Insulators, Ltd.
发明人： Takashi EBIGASE , Tomohiko HIBINO
IPC分类号： H01L41/39
CPC分类号： H01L41/39 , C04B35/486 , C04B35/491 , C04B35/493 , C04B35/64 , C04B2235/3213 , C04B2235/3251 , C04B2235/3255 , C04B2235/72 , C04B2235/725 , C04B2235/728 , C04B2235/761 , C04B2235/765 , C04B2235/94 , C04B2235/9623 , C04B2235/9638 , H01L41/1876 , H01L41/43 , Y10T29/42
摘要： The method for manufacturing a piezoelectric substrate includes a process of forming a material having composition M1−y/2+x(N1−yNby)O3+x (where 0≦y≦0.045, M represents Pb1−pSrp with 0≦p≦0.03, and N represents Ti1−qZrq with 0.45≦q≦0.60) into a sheet form, and a process of burning the material formed into the sheet form while mounted on a setter to obtain a piezoelectric substrate. A thickness of the piezoelectric substrate is 30 μm or less, and a surface area/thickness ratio of the piezoelectric substrate is 1×107 μm or more. The variable x has a value within or on a boundary of a region R shown by hatching in FIG. 1.
摘要翻译：制造压电基板的方法包括形成具有组成M1-y / 2 + x（N1-yNby）O3 + x（其中0≤y≤0.045，M表示Pb1-pSrp，0≤p≤0.03）的材料的方法，N表示具有0.45×q = 0.60的Ti1-qZrq）成片状，并且在安装在固定器上时将形成为片状的材料燃烧以获得压电基板的工序。压电基板的厚度为30μm以下，压电基板的表面积/厚度比为1×107μm以上。变量x具有在图2中通过阴影示出的区域R的边界内或之上的值。 1。

44. 发明申请

US20090056094A1 Piezoelectric composite nanofibers, nanotubes, nanojunctions and nanotrees 审中-公开
标题翻译：压电复合纳米纤维，纳米管，纳米结和纳米
公开(公告)号：US20090056094A1
公开(公告)日：2009-03-05
申请号：US12229192
申请日：2008-08-20
申请人： Yong Shi , Shiyou Xu
发明人： Yong Shi , Shiyou Xu
IPC分类号： H01L41/22
CPC分类号： H01L41/1876 , H01L41/082 , H01L41/39 , Y10T29/42
摘要： Piezoelectric nanostructures, including nanofibers, nanotubes, nanojunctions and nanotrees, may be made of piezoelectric materials alone, or as composites of piezoelectric materials and electrically-conductive materials. Homogeneous or composite nanofibers and nanotubes may be fabricated by electrospinning. Homogeneous or composite nanotubes, nanojunctions and nanotrees may be fabricated by template-assisted processes in which colloidal suspensions and/or modified sol-gels of the desired materials are deposited sequentially into the pores of a template. The electrospinning or template-assisted fabrication methods may employ a modified sol-gel process for obtaining a perovskite phase in the piezoelectric material at a low annealing temperature.
摘要翻译：包括纳米纤维，纳米管，纳米结和纳米线在内的压电纳米结构可以由压电材料单独制成，或者作为压电材料和导电材料的复合材料制成。可以通过静电纺丝制造均相或复合纳米纤维和纳米管。可以通过模板辅助方法制备均相或复合纳米管，纳米结和纳米管，其中将所需材料的胶体悬浮液和/或经修饰的溶胶凝胶顺序沉积到模板的孔中。静电纺丝或模板辅助制造方法可以采用改进的溶胶 - 凝胶法，以在低退火温度下获得压电材料中的钙钛矿相。

45. 发明申请

US20040231581A1 BaTiO3-PbTiO3 series single crystal and method of manufacturing the same, piezoelectric type actuator and liquid discharge head using such piezoelectric type actuator 审中-公开
公开(公告)号：US20040231581A1
公开(公告)日：2004-11-25
申请号：US10879364
申请日：2004-06-30
申请人： Canon Kabushiki Kaisha
发明人： Hiroshi Aoto , Akira Unno , Tetsuro Fukui , Akio Ikesue
IPC分类号： C30B001/00
CPC分类号： C04B35/4684 , C30B1/00 , C30B29/32 , H01L41/1871 , H01L41/39
摘要： BaTiO3nullPbTiO3 series single crystal is single-crystallized by heating BaTiO3nullPbTiO3 compact powder member or sintered member having a smaller Pb-containing mol number than Ba-containing mol number, while keeping the powder or substance in non-molten condition. In this way, this single crystal can be manufactured at a crystal growing speed faster still and stabilized more, significantly contributing to improving the dielectric loss and electromechanical coupling coefficient for the provision of excellent BaTiO3nullPbTiO3 series single crystal in various properties, as well as for the provision of piezoelectric material having a small ratio of lead content, which is particularly excellent in piezoelectric property and productivity.

46. 发明授权

US5318725A Electroceramics and process for making the same 失效
标题翻译：电陶瓷和制造相同的工艺
公开(公告)号：US5318725A
公开(公告)日：1994-06-07
申请号：US115352
申请日：1993-09-01
申请人： Kenneth H. Sandhage
发明人： Kenneth H. Sandhage
IPC分类号： B22F1/00 , B22F3/20 , C04B35/468 , C04B35/49 , C04B35/491 , C04B35/622 , C04B35/65 , H01L41/24 , H01B1/06
CPC分类号： C04B35/4684 , C04B35/491 , C04B35/65 , H01L41/27 , H01L41/39 , H01L41/1871 , H01L41/1876
摘要： Principal types of dielectric ceramics include capacitors, and piezoelectric electroptic and optical ceramics. The former are typically barium titanates, the latter, so-called PZT or PLZT materials. The ceramic materials are made by forming an alloy including the metallic elements in substantially stoichiometric proportions, and then oxidizing the alloy to produce the ceramic. In preferred embodiments, the alloy includes a dopant that is encapsulated in a noble metal, preferably silver. Preferred dielectrics are made by making a multi-layer structure in which a plurality of alloy layers (typically less than 20, and preferably less than 5, microns thick) are separated by conductive layers (preferably a noble metal), and then oxidizing the overall structure to form a multi-layer capacitor.
摘要翻译：电介质陶瓷的主要类型包括电容器和压电电光和光学陶瓷。前者通常是钛酸钡，后者是所谓的PZT或PLZT材料。陶瓷材料通过以基本上化学计量的比例形成包含金属元素的合金，然后氧化合金以制造陶瓷而制成。在优选的实施方案中，合金包括被包封在贵金属中，优选为银的掺杂剂。优选的电介质通过制备多层结构制成，其中多个合金层（通常小于20，优选小于5微米厚）由导电层（优选贵金属）分离，然后氧化整个结构形成多层电容器。

47. 发明授权

US4193010A Sensor device using piezoelectric coating subjected to bending 失效
标题翻译：使用压电涂层进行弯曲的传感器装置
公开(公告)号：US4193010A
公开(公告)日：1980-03-11
申请号：US889997
申请日：1978-03-24
申请人： Harry W. Kompanek
发明人： Harry W. Kompanek
IPC分类号： G01F23/296 , G01H13/00 , G01N27/00 , H01L41/113 , H01L41/24 , H01L41/10
CPC分类号： G01N29/036 , G01F23/2967 , G01H13/00 , H01L41/1132 , H01L41/39 , G01N2291/0256 , H01L41/1876
摘要： A sensor device having a vibratable surface which can be exposed to variousmaterials and used to determine the presence thereof is disclosed. The device includes a sandwich structure comprising a substrate coated with a piezoelectric material, a pickup electrode joined to the piezoelectric and a drive electrode also joined to the piezoelectric. The piezoelectric material is applied to the substrate as a slurry and when dried forms a ceramic coating which is chemically bonded to the substrate. The sensor is electrically driven to vibrate and depending upon the absence or presence of the material to be detected a characteristic vibrational frequency or amplitude of the sensing surface is observed to indicate contact with such material. Various embodiments are discussed including a rectangular configuration which is cantilevered from a support base and a circular configuration which is held circumferentially by the support base.
摘要翻译：公开了具有可暴露于各种材料并用于确定其存在的可振动表面的传感器装置。该装置包括夹层结构，该夹层结构包括涂覆有压电材料的基底，连接到压电体的拾取电极和还连接到压电体的驱动电极。将压电材料作为浆料施加到基底上，并且当干燥时形成化学键合到基底上的陶瓷涂层。传感器被电驱动以振动并且根据待检测材料的不存在或存在，观察到感测表面的特征振动频率或振幅以指示与这种材料的接触。讨论了各种实施例，其包括从支撑基座悬臂的矩形构造和由支撑基座周向保持的圆形构造。

48. 发明授权

US2562325A Apparatus for producing artificial crystals 失效
标题翻译：用于生产人造晶体的装置
公开(公告)号：US2562325A
公开(公告)日：1951-07-31
申请号：US72518347
申请日：1947-01-30
申请人： BENDIX AVIAT CORP
发明人： MERRITT GEORGE E
IPC分类号： B01D9/02
CPC分类号： C30B29/56 , C30B7/00 , C30B29/14 , H01L41/39 , Y10T117/1024

49. 发明申请

US20190172995A1 PRESSURE SENSOR AND MANUFACTURING METHOD THEREOF 审中-公开
公开(公告)号：US20190172995A1
公开(公告)日：2019-06-06
申请号：US16163934
申请日：2018-10-18
申请人： KOREA ELECTRONICS TECHNOLOGY INSTITUTE
发明人： Suk Won JUNG , Nam Kyu CHO
IPC分类号： H01L41/08 , H01L41/39 , H01L41/18 , H01L41/113 , H01L29/06 , H01L29/84
CPC分类号： H01L41/0805 , G01L9/0042 , G01L9/0055 , H01L29/0669 , H01L29/84 , H01L41/1132 , H01L41/18 , H01L41/39
摘要： Disclosed is a silicon nanowire pressure sensor including a lower substrate with a diaphragm recess in a lower surface thereof, an upper substrate having a first surface attached to an upper surface of the lower substrate, silicon nanowires formed on the first surface of the upper substrate, resistive portions exposed on a second surface of the upper substrate, and a diaphragm region formed by etching a center portion of the second surface of the upper substrate so as to be aligned with the resistive portions, in which the diaphragm recess is larger than the diaphragm region.

50. 发明申请

US20180262180A1 FILM BULK ACOUSTIC RESONATOR AND METHOD OF MANUFACTURING THE SAME 审中-公开
公开(公告)号：US20180262180A1
公开(公告)日：2018-09-13
申请号：US15808662
申请日：2017-11-09
申请人： Samsung Electro-Mechanics Co., Ltd.
发明人： Tae Kyung LEE , Jin Suk SON , Sung Sun KIM , Je Hong KYOUNG , Hwa Sun LEE , Ran Hee SHIN
IPC分类号： H03H9/17 , H01L41/16 , H01L41/18 , H01L41/29 , H01L41/39
CPC分类号： H03H9/17 , H01L41/16 , H01L41/183 , H01L41/187 , H01L41/29 , H01L41/39 , H03H3/02 , H03H9/02015 , H03H9/173 , H03H2003/021
摘要： A film bulk acoustic resonator includes: a first electrode disposed on a substrate; a piezoelectric body disposed on the first electrode and including AlN to which a dopant is added; and a second electrode disposed on the piezoelectric body and facing the first electrode such that the piezoelectric body is interposed between the second electrode and the first electrode, wherein the dopant includes either one of 0.1 to 24 at % of Ta and 0.1 to 23 at % of Nb.

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