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41. 发明申请

US20130312827A1 SOLAR CELL AND METHOD OF MANUFACTURE THEREOF, AND SOLAR CELL MODULE 有权
标题翻译：太阳能电池及其制造方法和太阳能电池模块
公开(公告)号：US20130312827A1
公开(公告)日：2013-11-28
申请号：US13983553
申请日：2012-08-09
申请人： Daisuke Adachi , Kenji Yamamoto , Jose Luis Hernandez , Nick Valckx
发明人： Daisuke Adachi , Kenji Yamamoto , Jose Luis Hernandez , Nick Valckx
IPC分类号： H01L31/0224
CPC分类号： H01L31/022475 , H01L31/022425 , H01L31/0445 , Y02E10/542 , Y02P70/521
摘要： Disclosed is a solar cell having a collecting electrode on one main surface of a photoelectric conversion section. The collecting electrode includes a first electroconductive layer and a second electroconductive layer in this order from the photoelectric conversion section side, and further includes an insulating layer between the first electroconductive layer and the second electroconductive layer. The first electroconductive layer includes a low-melting-point material, and a part of the second electroconductive layer is conductively connected with the first electroconductive layer through, for example, an opening in the insulating layer. The second electrode layer is preferably formed by a plating method. In addition, it is preferable that before forming the second electroconductive layer, annealing by heating is carried out to generate the opening section in the insulating layer.
摘要翻译：公开了一种在光电转换部的一个主面上具有集电极的太阳能电池。收集电极从光电转换部分侧依次包括第一导电层和第二导电层，并且还包括在第一导电层和第二导电层之间的绝缘层。第一导电层包括低熔点材料，并且第二导电层的一部分通过例如绝缘层中的开口与第一导电层导电连接。第二电极层优选通过电镀法形成。此外，优选在形成第二导电层之前，通过加热进行退火以在绝缘层中产生开口部。

42. 发明授权

US08574464B2 Oxide evaporation material, transparent conducting film, and solar cell 有权
公开(公告)号：US08574464B2
公开(公告)日：2013-11-05
申请号：US12916952
申请日：2010-11-01
申请人： Yoshiyuki Abe , Riichiro Wake , Masakazu Kuwahara , Kentaro Sogabe , Azusa Oshiro , Hisaki Yada
发明人： Yoshiyuki Abe , Riichiro Wake , Masakazu Kuwahara , Kentaro Sogabe , Azusa Oshiro , Hisaki Yada
IPC分类号： H01B1/08
CPC分类号： H01B1/08 , C04B35/01 , C04B2235/3229 , C04B2235/3256 , C04B2235/3258 , C04B2235/3286 , C04B2235/3293 , C04B2235/5436 , C04B2235/5445 , C04B2235/608 , C04B2235/6562 , C04B2235/6565 , C04B2235/6567 , C04B2235/658 , C04B2235/6585 , C04B2235/6586 , C04B2235/77 , C04B2235/786 , C04B2235/9646 , C23C14/08 , C23C14/3414 , C23C30/005 , H01L31/022466 , H01L31/022475 , H01L31/0749 , H01L31/1884 , Y02E10/541
摘要： An oxide evaporation material according to the present invention includes a sintered body containing indium oxide as a main component thereof and cerium with a Ce/In atomic ratio of 0.001 to 0.110. The L* value in the CIE 1976 color space is 62 to 95. The oxide evaporation material with the L* value of 62 to 95 has an optimal oxygen amount. Accordingly, even when a small amount of an oxygen gas is introduced into a film-formation vacuum chamber, a transparent conducting film having a low resistance and a high transmittance in the visible to near-infrared region is formed by vacuum deposition methods. Since the amount of the oxygen gas introduced is small, the difference in composition between the film and the evaporation material is made small. This reduces the variations in composition and characteristics among films formed in large quantities.

43. 发明申请

US20130249094A1 METHOD OF PREPARING TRANSPARENT CONDUCTING OXIDE FILMS 审中-公开
标题翻译：制备透明导电膜的方法
公开(公告)号：US20130249094A1
公开(公告)日：2013-09-26
申请号：US13990779
申请日：2011-11-28
申请人： Hansong Cheng , Guo Qin Xu
发明人： Hansong Cheng , Guo Qin Xu
IPC分类号： H01L31/18 , H01L51/00
CPC分类号： H01L31/1884 , H01B1/08 , H01L31/022475 , H01L51/0021 , H01L51/442 , H01L51/5206 , Y02E10/50
摘要： The present invention discloses a method of preparing a transparent conducting oxide (TCO) film comprising the steps of: applying surface modified TCO nanoparticles onto a surface of a substrate; and cross-linking the surface modified TCO nanoparticles. The present invention also provides a transparent conducting oxide film prepared according to the method.
摘要翻译：本发明公开了一种制备透明导电氧化物（TCO）膜的方法，包括以下步骤：将表面改性的TCO纳米颗粒施加到基材的表面上; 并交联表面改性的TCO纳米颗粒。本发明还提供了根据该方法制备的透明导电氧化物膜。

44. 发明授权

US08471314B2 Solid-state imaging device, method for producing same, and camera 有权
公开(公告)号：US08471314B2
公开(公告)日：2013-06-25
申请号：US12703848
申请日：2010-02-11
申请人： Yasushi Maruyama , Tetsuji Yamaguchi , Takashi Ando , Susumu Hiyama , Yuko Ohgishi
发明人： Yasushi Maruyama , Tetsuji Yamaguchi , Takashi Ando , Susumu Hiyama , Yuko Ohgishi
IPC分类号： H01L31/062
CPC分类号： H01L27/14609 , H01L27/1464 , H01L27/14643 , H01L27/14685 , H01L31/022466 , H01L31/022475
摘要： A solid-state imaging device includes a substrate having a first surface and a second surface, light being incident on the second surface side; a wiring layer disposed on the first surface side; a photodetector formed in the substrate and including a first region of a first conductivity type; a transfer gate disposed on the first surface of the substrate and adjacent to the photodetector, the transfer gate transferring a signal charge accumulated in the photodetector; and at least one control gate disposed on the first surface of the substrate and superposed on the photodetector, the control gate controlling the potential of the photodetector in the vicinity of the first surface.

45. 发明授权

US08445373B2 Method of enhancing the conductive and optical properties of deposited indium tin oxide (ITO) thin films 失效
标题翻译：提高沉积氧化铟锡（ITO）薄膜导电性能和光学性能的方法
公开(公告)号：US08445373B2
公开(公告)日：2013-05-21
申请号：US12457006
申请日：2009-05-28
申请人： David M. Broadway , Yiwei Lu
发明人： David M. Broadway , Yiwei Lu
IPC分类号： H01L21/44
CPC分类号： H01L31/1884 , B32B17/10036 , B32B17/10761 , B32B17/10788 , H01L31/022466 , H01L31/022475 , Y02E10/50
摘要： Certain example embodiments of this invention relate to a method of activating an indium tin oxide (ITO) thin film deposited, directly or indirectly, on a substrate. The ITO thin film is baked in a low oxygen environment at a temperature of at least 450 degrees C. for at least 10 minutes so as to provide for (1) a post-baked resistivity of the ITO thin film that is below a resistivity of a corresponding air-baked ITO thin film, (2) a post-baked visible spectrum absorption and transmission of the ITO thin film that respectively are below and above the absorption and transmission of the corresponding air-baked ITO thin film, and (3) a post-baked infrared reflectivity of the ITO thin film that is above the reflectivity of the corresponding air-baked ITO thin film. The substrate with the activated ITO thin film may be used in a photovoltaic device, for example.
摘要翻译：本发明的某些示例性实施例涉及一种激活在衬底上直接或间接沉积的氧化铟锡（ITO）薄膜的方法。 ITO薄膜在低氧环境中在至少450℃的温度下烘烤至少10分钟，从而提供（1）ITO薄膜的后烘烤电阻率低于相应的空气焙烧ITO薄膜，（2）ITO薄膜的后烘烤可见光谱吸收和透射分别在相应的空气焙烧ITO薄膜的吸收和透射之下和之上，和（3） ITO薄膜的后烘焙红外反射率高于相应的空气焙烧ITO薄膜的反射率。具有活化的ITO薄膜的基板例如可以用在光电器件中。

46. 发明授权

US08384179B2 Black silicon based metal-semiconductor-metal photodetector 有权
标题翻译：黑色硅基金属 - 半导体 - 金属光电探测器
公开(公告)号：US08384179B2
公开(公告)日：2013-02-26
申请号：US12835656
申请日：2010-07-13
申请人： Yadong Jiang , Jing Jiang , Anyuan Zhang , Zhengyu Guo , Guodong Zhao , Zhiming Wu , Wei Li
发明人： Yadong Jiang , Jing Jiang , Anyuan Zhang , Zhengyu Guo , Guodong Zhao , Zhiming Wu , Wei Li
IPC分类号： H01L31/0236
CPC分类号： H01L31/1085 , H01L31/02161 , H01L31/022408 , H01L31/022475
摘要： A black silicon based metal-semiconductor-metal photodetector includes a silicon substrate and a black silicon layer formed on the silicon substrate. An interdigitated electrode pattern structure is formed on the black silicon layer, which can be a planar or U-shaped structure. A thin potential barrier layer is deposited at the interdigitated electrode pattern structure. An Al or transparent conductive ITO thin film is deposited on the thin potential barrier layer. A passivation layer is provided on the black silicon layer. In the black silicon based metal-semiconductor-metal photodetector, the black silicon layer, as a light-sensitive area, can respond to ultraviolet, visible and near infrared light.
摘要翻译：黑色硅基金属 - 半导体 - 金属光电探测器包括硅衬底和形成在硅衬底上的黑色硅层。在黑色硅层上形成交错的电极图案结构，其可以是平面或U形结构。在交叉电极图案结构处沉积薄势垒层。在薄势垒层上沉积Al或透明导电ITO薄膜。钝化层设置在黑色硅层上。在黑色硅基金属 - 半导体 - 金属光电探测器中，作为感光区域的黑色硅层可以对紫外线，可见光和近红外光进行响应。

47. 发明授权

US08318530B2 Solar cell buffer layer having varying composition 失效
标题翻译：具有不同组成的太阳能电池缓冲层
公开(公告)号：US08318530B2
公开(公告)日：2012-11-27
申请号：US12843778
申请日：2010-07-26
申请人： Bulent M. Basol , Mustafa Pinarbasi , James Freitag
发明人： Bulent M. Basol , Mustafa Pinarbasi , James Freitag
IPC分类号： H01L21/00
CPC分类号： H01L31/206 , C23C18/12 , C23C18/1204 , C23C18/125 , H01L31/022475 , H01L31/022483 , H01L31/0322 , H01L31/0749 , H01L31/1884 , Y02E10/541 , Y02P70/521
摘要： Described is a continuous electroless deposition method and a system to form a solar cell buffer layer with a varying composition through its thickness are provided. The composition of the buffer layer is varied by varying the composition of a chemical bath deposition solution applied onto an absorber surface on which the buffer layer with varying composition is formed. In one example, the buffer layer with varying composition includes a first section containing CdS, a second section containing CdZnS formed on top of the already deposited CdS, and a third section containing ZnS is formed on the second section All the process steps are applied in a roll-to-roll fashion. In another example, a transparent conductive layer including a first transparent conductive film such as aluminum doped zinc oxide and a second transparent conductive film such as indium tin oxide is deposited over the buffer layer with the varying composition.
摘要翻译：描述了一种连续的无电沉积方法，并且提供了通过其厚度形成具有不同组成的太阳能电池缓冲层的系统。通过改变施加到其上形成有不同组成的缓冲层的吸收体表面上的化学浴沉积溶液的组成来改变缓冲层的组成。在一个实例中，具有不同成分的缓冲层包括含有CdS的第一部分，在已经沉积的CdS的顶部上形成的包含CdZnS的第二部分，在第二部分上形成包含ZnS的第三部分。所有的工艺步骤都应用于一对一的滚动时尚。在另一个实例中，包括第一透明导电膜如铝掺杂氧化锌和第二透明导电膜如氧化铟锡的透明导电层沉积在具有不同组成的缓冲层上。

48. 发明申请

US20120160560A1 ELECTRICALLY CONDUCTIVE OPTICAL ELEMENT, TOUCH PANEL, INFORMATION INPUT DEVICE, DISPLAY DEVICE, SOLAR CELL, AND STAMPER FOR PRODUCING ELECTRICALLY CONDUCTIVE OPTICAL ELEMENT 审中-公开
标题翻译：电导电光学元件，触控面板，信息输入装置，显示装置，太阳能电池和用于制造导电光学元件的冲压器
公开(公告)号：US20120160560A1
公开(公告)日：2012-06-28
申请号：US13127177
申请日：2010-09-20
申请人： Shunichi Kajiya , Masaki Takenouchi , Sohmei Endoh , Kazuya Hayashibe , Kiyohiro Kimura , Yutaka Muramoto
发明人： Shunichi Kajiya , Masaki Takenouchi , Sohmei Endoh , Kazuya Hayashibe , Kiyohiro Kimura , Yutaka Muramoto
IPC分类号： H02G3/00 , H01L31/0224 , B29C59/02
CPC分类号： B32B3/30 , G02B1/11 , G02B5/0231 , G06F3/042 , G06F3/0428 , H01L31/022466 , H01L31/022475 , H01L31/0236 , Y02E10/50
摘要： An electrically conductive optical element is provided with a substrate having a surface, structures which are convex portions or concave portions in the shape of a cone and which are arranged in large numbers on the surface of the substrate with a minute pitch less than or equal to the wavelength of the visible light, and a transparent, electrically conductive layer disposed on the structures. The aspect ratio of the structure is 0.2 or more, and 1.3 or less, the transparent, electrically conductive layer has a surface following the structures, the average layer thickness Dm1 of the transparent, electrically conductive layer at the top portion of the structure is 80 nm or less, and the surface resistance of the transparent, electrically conductive layer is within the range of 50Ω/□ or more, and 500Ω/□ or less.
摘要翻译：导电光学元件设置有具有表面的基板，作为圆锥形状的凸部或凹部的结构，并且以小间距小于等于基板的表面大量布置可见光的波长和设置在结构上的透明导电层。该结构的纵横比为0.2以上且1.3以下，透明导电层具有与结构接近的表面，结构顶部的透明导电层的平均层厚度Dm1为80 nm以下，透明导电层的表面电阻为50ΩΩ/□以上，500ΩΩ/□以下的范围。

49. 发明申请

US20120147241A1 SOLID-STATE IMAGING DEVICE, METHOD FOR PRODUCING SAME, AND CAMERA 审中-公开
标题翻译：固态成像装置，其制造方法和相机
公开(公告)号：US20120147241A1
公开(公告)日：2012-06-14
申请号：US13402298
申请日：2012-02-22
申请人： Tetsuji Yamaguchi , Yasushi Maruyama , Takashi Ando , Susumu Hiyama , Yuko Ohgishi
发明人： Tetsuji Yamaguchi , Yasushi Maruyama , Takashi Ando , Susumu Hiyama , Yuko Ohgishi
IPC分类号： H04N5/335 , H01L27/148
CPC分类号： H01L27/14609 , H01L27/1464 , H01L27/14643 , H01L27/14685 , H01L31/022466 , H01L31/022475
摘要： A solid-state imaging device includes a substrate with oppositely facing first surface and second surfaces, light being received through the second surface; a wiring layer on the first surface; a photodetector in the substrate; a charge accummulation region between the second surface and the photodetector; and an insulating layer over the second surface, the insulating layer have a region that is at least partially crystallized.
摘要翻译：固态成像装置包括具有相对面对的第一表面和第二表面的基板，光被接收通过第二表面; 第一表面上的布线层; 基板上的光电检测器; 所述第二表面和所述光电检测器之间的电荷累积区域; 以及在所述第二表面上的绝缘层，所述绝缘层具有至少部分地结晶的区域。

50. 发明授权

US08192652B2 Tin-doped indium oxide thin films and method for making same 有权
标题翻译：锡掺杂氧化铟薄膜及其制造方法
公开(公告)号：US08192652B2
公开(公告)日：2012-06-05
申请号：US12778183
申请日：2010-05-12
申请人： Chu-Chi Ting , Chia-Hao Tsai , Hsiang-Chen Wang
发明人： Chu-Chi Ting , Chia-Hao Tsai , Hsiang-Chen Wang
IPC分类号： H01B1/08 , B05D5/12 , C23C14/34
CPC分类号： H01B1/08 , C09K11/7787 , C23C14/08 , C23C14/086 , C23C14/34 , C23C16/40 , C23C16/407 , C23C18/1216 , C23C18/1254 , C23C18/1283 , H01L31/022475 , H01L31/055 , H01L31/1884 , Y02E10/52
摘要： The tin-doped indium oxide thin film in accordance with the present invention has a tin-doped indium oxide, yttrium ions and europium ions, wherein the yttrium ions are proportional to 0.1-10 mol % of the tin-doped indium oxide while the europium ions proportional to 0.05-5 mol % of the tin-doped indium oxide. The method in accordance with the present invention comprises preparing a tin-doped indium oxide; and doping yttrium ions proportional to 0.1-10 mol % of the tin-doped indium and europium ions proportional to 0.05-5 mol % of the tin-doped indium oxide in the tin-doped indium oxide using a film-manufacturing method.
摘要翻译：根据本发明的掺锡氧化铟薄膜具有掺杂锡的氧化铟，钇离子和铕离子，其中钇离子与锡掺杂的氧化铟的0.1-10mol％成比例，而铕离子与锡掺杂氧化铟的0.05-5摩尔％成比例。根据本发明的方法包括制备掺杂锡的氧化铟; 并且使用膜制造方法将锡掺杂的铟和铕离子的掺杂比例与掺杂锡的氧化铟中的锡掺杂的氧化铟的0.05-5摩尔％成比例的掺杂钇离子。

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