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41. 发明申请

US20120147241A1 SOLID-STATE IMAGING DEVICE, METHOD FOR PRODUCING SAME, AND CAMERA 审中-公开
标题翻译：固态成像装置，其制造方法和相机
公开(公告)号：US20120147241A1
公开(公告)日：2012-06-14
申请号：US13402298
申请日：2012-02-22
申请人： Tetsuji Yamaguchi , Yasushi Maruyama , Takashi Ando , Susumu Hiyama , Yuko Ohgishi
发明人： Tetsuji Yamaguchi , Yasushi Maruyama , Takashi Ando , Susumu Hiyama , Yuko Ohgishi
IPC分类号： H04N5/335 , H01L27/148
CPC分类号： H01L27/14609 , H01L27/1464 , H01L27/14643 , H01L27/14685 , H01L31/022466 , H01L31/022475
摘要： A solid-state imaging device includes a substrate with oppositely facing first surface and second surfaces, light being received through the second surface; a wiring layer on the first surface; a photodetector in the substrate; a charge accummulation region between the second surface and the photodetector; and an insulating layer over the second surface, the insulating layer have a region that is at least partially crystallized.
摘要翻译：固态成像装置包括具有相对面对的第一表面和第二表面的基板，光被接收通过第二表面; 第一表面上的布线层; 基板上的光电检测器; 所述第二表面和所述光电检测器之间的电荷累积区域; 以及在所述第二表面上的绝缘层，所述绝缘层具有至少部分地结晶的区域。

42. 发明授权

US08192652B2 Tin-doped indium oxide thin films and method for making same 有权
标题翻译：锡掺杂氧化铟薄膜及其制造方法
公开(公告)号：US08192652B2
公开(公告)日：2012-06-05
申请号：US12778183
申请日：2010-05-12
申请人： Chu-Chi Ting , Chia-Hao Tsai , Hsiang-Chen Wang
发明人： Chu-Chi Ting , Chia-Hao Tsai , Hsiang-Chen Wang
IPC分类号： H01B1/08 , B05D5/12 , C23C14/34
CPC分类号： H01B1/08 , C09K11/7787 , C23C14/08 , C23C14/086 , C23C14/34 , C23C16/40 , C23C16/407 , C23C18/1216 , C23C18/1254 , C23C18/1283 , H01L31/022475 , H01L31/055 , H01L31/1884 , Y02E10/52
摘要： The tin-doped indium oxide thin film in accordance with the present invention has a tin-doped indium oxide, yttrium ions and europium ions, wherein the yttrium ions are proportional to 0.1-10 mol % of the tin-doped indium oxide while the europium ions proportional to 0.05-5 mol % of the tin-doped indium oxide. The method in accordance with the present invention comprises preparing a tin-doped indium oxide; and doping yttrium ions proportional to 0.1-10 mol % of the tin-doped indium and europium ions proportional to 0.05-5 mol % of the tin-doped indium oxide in the tin-doped indium oxide using a film-manufacturing method.
摘要翻译：根据本发明的掺锡氧化铟薄膜具有掺杂锡的氧化铟，钇离子和铕离子，其中钇离子与锡掺杂的氧化铟的0.1-10mol％成比例，而铕离子与锡掺杂氧化铟的0.05-5摩尔％成比例。根据本发明的方法包括制备掺杂锡的氧化铟; 并且使用膜制造方法将锡掺杂的铟和铕离子的掺杂比例与掺杂锡的氧化铟中的锡掺杂的氧化铟的0.05-5摩尔％成比例的掺杂钇离子。

43. 发明申请

US20120048333A1 PHOTOVOLTAIC DEVICE INTERCONNECT 审中-公开
标题翻译：光电器件互连
公开(公告)号：US20120048333A1
公开(公告)日：2012-03-01
申请号：US13220061
申请日：2011-08-29
申请人： Oleh P. Karpenko , Jianjun Wang
发明人： Oleh P. Karpenko , Jianjun Wang
IPC分类号： H01L31/05 , B32B19/00 , H01L31/18 , B32B15/04
CPC分类号： H01L31/1832 , H01L31/022466 , H01L31/022475 , H01L31/0296 , H01L31/0322 , H01L31/03925 , H01L31/0463 , H01L31/0465 , Y02E10/541 , Y02P70/521 , Y10T428/31678
摘要： Scribing and deposition processes can be used to interconnect cells within photovoltaic modules.
摘要翻译：划线和沉积工艺可用于互连光伏模块内的电池。

44. 发明申请

US20110297217A1 PHOTOVOLTAIC DEVICES WITH MULTIPLE JUNCTIONS SEPARATED BY A GRADED RECOMBINATION LAYER 有权
标题翻译：具有由分级重构层分离的多个连接的光电器件
公开(公告)号：US20110297217A1
公开(公告)日：2011-12-08
申请号：US13022350
申请日：2011-02-07
申请人： Aaron Barkhouse , Xihua Wang , Edward H. Sargent , Ghada Koleilat , Lukasz Brzozowski
发明人： Aaron Barkhouse , Xihua Wang , Edward H. Sargent , Ghada Koleilat , Lukasz Brzozowski
IPC分类号： H01L31/06 , B82Y99/00
CPC分类号： H01L31/0687 , H01L31/022466 , H01L31/022475 , H01L31/035218 , H01L31/0725 , H01L51/42 , Y02E10/549
摘要： A recombination layer with a gradient work function is provided which increases the power-conversion efficiency of multijunction photovoltaic devices by reducing the energy barrier to charge carriers migrating between pairs of photovoltaic junctions thereby facilitating the optimal recombination of opposing electron and hole currents generated when the photovoltaic is illuminated.
摘要翻译：提供了具有梯度功能的复合层，其通过减少在光伏结对之间迁移的电荷载流子的能量势垒来提高多结光伏器件的功率转换效率，从而有助于当光伏被照亮。

45. 发明申请

US20110278510A1 Tin-Doped Indium Oxide Thin Films And Method For Making Same 有权
标题翻译：锡掺杂氧化铟薄膜及其制造方法
公开(公告)号：US20110278510A1
公开(公告)日：2011-11-17
申请号：US12778183
申请日：2010-05-12
申请人： Chu-Chi Ting , Chia-Hao Tsai , Hsiang-Chen Wang
发明人： Chu-Chi Ting , Chia-Hao Tsai , Hsiang-Chen Wang
IPC分类号： H01B1/08 , C23C14/34 , B05D5/12
CPC分类号： H01B1/08 , C09K11/7787 , C23C14/08 , C23C14/086 , C23C14/34 , C23C16/40 , C23C16/407 , C23C18/1216 , C23C18/1254 , C23C18/1283 , H01L31/022475 , H01L31/055 , H01L31/1884 , Y02E10/52
摘要： The tin-doped indium oxide thin film in accordance with the present invention has a tin-doped indium oxide, yttrium ions and europium ions, wherein the yttrium ions are proportional to 0.1-10 mol % of the tin-doped indium oxide while the europium ions proportional to 0.05-5 mol % of the tin-doped indium oxide.The method in accordance with the present invention comprises preparing a tin-doped indium oxide; and doping yttrium ions proportional to 0.1-10 mol % of the tin-doped indium and europium ions proportional to 0.05-5 mol % of the tin-doped indium oxide in the tin-doped indium oxide using a film-manufacturing method.
摘要翻译：根据本发明的掺锡氧化铟薄膜具有掺杂锡的氧化铟，钇离子和铕离子，其中钇离子与锡掺杂的氧化铟的0.1-10mol％成比例，而铕离子与锡掺杂氧化铟的0.05-5摩尔％成比例。根据本发明的方法包括制备掺杂锡的氧化铟; 并且使用膜制造方法将锡掺杂的铟和铕离子的掺杂比例与掺杂锡的氧化铟中的锡掺杂的氧化铟的0.05-5摩尔％成比例的掺杂钇离子。

46. 发明授权

US08039405B2 Conductive oxide-deposited substrate and method for producing the same, and MIS laminated structure and method for producing the same 有权
标题翻译：导电性氧化物沉积基板及其制造方法，MIS层压结构及其制造方法
公开(公告)号：US08039405B2
公开(公告)日：2011-10-18
申请号：US12362708
申请日：2009-01-30
申请人： Hiroshi Miura , Kohji Takeuchi , Nobuaki Toyoshima
发明人： Hiroshi Miura , Kohji Takeuchi , Nobuaki Toyoshima
IPC分类号： H01L21/00 , H01L29/10
CPC分类号： H01L21/32134 , H01L29/4908 , H01L29/78603 , H01L29/7869 , H01L31/02008 , H01L31/022466 , H01L31/022475 , H01L31/1884 , Y02E10/50 , Y10T428/24628
摘要： A method for producing a conductive oxide-deposited substrate including depositing a conductive oxide thin film over a substrate, subjecting the conductive oxide thin film to heat treatment by irradiating with a condensed laser beam so as to be thermally changed in part, and subjecting the conductive oxide thin film to etching treatment so as to remove a part which has not been thermally changed, wherein the conductive oxide thin film absorbs the laser beam, and at least a part of the conductive oxide thin film is an amorphous phase.
摘要翻译：一种导电氧化物沉积基板的制造方法，包括在基板上沉积导电氧化物薄膜，对所述导电氧化物薄膜进行热处理，通过用聚光激光束照射进行部分热变换，氧化物薄膜进行蚀刻处理，以去除未被热改变的部分，其中导电氧化物薄膜吸收激光束，并且导电氧化物薄膜的至少一部分是非晶相。

47. 发明申请

US20110192454A1 PHOTOVOLTAIC DEVICE WITH TRANSPARENT, CONDUCTIVE BARRIER LAYER 有权
标题翻译：具有透明，导电障碍层的光电器件
公开(公告)号：US20110192454A1
公开(公告)日：2011-08-11
申请号：US13005422
申请日：2011-01-12
申请人： Rebekah K. Feist , Marty W. DeGroot , Todd R. Bryden , Joseph George
发明人： Rebekah K. Feist , Marty W. DeGroot , Todd R. Bryden , Joseph George
IPC分类号： H01L31/0224 , H01L31/0264 , H01L31/18
CPC分类号： H01L31/022408 , H01L31/02161 , H01L31/022466 , H01L31/022475 , H01L31/03923 , H01L31/03926 , Y02E10/541 , Y02P70/521
摘要： The present invention provides strategies for providing photovoltaic devices that are more resistant to moisture and/or oxygen degradation and the accompanying migration of key elements such as Na, Li, and the lanthanoid series of elements from the absorber layer and that have enhanced service life and improved performance. These strategies are particularly useful in the fabrication of chalcogenide-based photovoltaic devices such as chalcogenide-based solar cells. These strategies incorporate a barrier region between the photovoltaic absorber region and the front side collection grid. The barrier region keeps moisture and/or oxygen from the absorber layer and contains key elements such as Na, Li, and Ln in the absorber layer. As a result, the absorber layer retains its performance capabilities for an extended period of time.
摘要翻译：本发明提供了提供更耐紫外线和/或氧降解的光伏器件的策略，以及伴随着来自吸收层的元素Na，Li和镧系元素等关键元素的迁移，并具有增强的使用寿命提高性能。这些策略在制造基于硫属化物的太阳能电池等基于硫族化物的光电器件中特别有用。这些策略包括光伏吸收器区域和前侧收集栅格之间的阻挡区域。阻挡区域在吸收层中保持水分和/或氧，并且在吸收层中含有诸如Na，Li和Ln的关键元素。结果，吸收层在长时间内保持其性能。

48. 发明申请

US20110111215A1 TRANSPARENT CONDUCTIVE FILM HAVING FTO/ITO LAMINATE 失效
标题翻译：具有FTO / ITO层压板的透明导电膜
公开(公告)号：US20110111215A1
公开(公告)日：2011-05-12
申请号：US13000206
申请日：2009-06-22
申请人： Shigeo Yamada , Tatsuya Ooashi
发明人： Shigeo Yamada , Tatsuya Ooashi
IPC分类号： B32B9/04 , H01L21/283
CPC分类号： H01L31/1884 , C23C18/1216 , C23C18/1225 , C23C18/1258 , C23C18/1291 , H01L31/022466 , H01L31/022475 , H01L51/0021 , H01L51/442 , H01L2251/306 , H01L2251/308 , Y02E10/542 , Y02E10/549 , Y02P70/521 , Y10T428/265
摘要： A transparent conductive film for lamination on a substrate and comprising an ITO film and an FTO film, wherein a part or all of the crystal structure of a surface of the FTO film is orthorhombic, and a transparent conductive film for lamination on a substrate and comprising an ITO film and an FTO film, wherein the thickness of the FTO film is within a range from 5 nm to 20 nm and the FTO film is a continuous film. A method of producing the transparent conductive films includes depositing the ITO film on a substrate using a pyrosol process, and subsequently depositing the FTO film continuously on top of the ITO film.
摘要翻译：一种透明导电膜，用于层叠在基片上并且包括ITO膜和FTO膜，其中所述FTO膜的表面的一部分或全部晶体结构是斜方晶的，以及用于层叠在基底上的透明导电膜， ITO膜和FTO膜，其中FTO膜的厚度在5nm至20nm的范围内，并且FTO膜是连续膜。制造透明导电膜的方法包括使用热解法将ITO膜沉积在基板上，随后在ITO膜的上面连续沉积FTO膜。

49. 发明申请

US20110100446A1 High haze transparent contact including ion-beam treated layer for solar cells, and/or method of making the same 审中-公开
标题翻译：包括用于太阳能电池的离子束处理层的高雾度透明接触和/或其制造方法
公开(公告)号：US20110100446A1
公开(公告)日：2011-05-05
申请号：US12591061
申请日：2009-11-05
申请人： Alexey Krasnov
发明人： Alexey Krasnov
IPC分类号： H01L31/0232 , C23C14/34
CPC分类号： H01L31/022466 , C23C14/086 , C23C14/5806 , C23C14/5853 , H01L31/022475 , H01L31/022483 , H01L31/02366 , H01L31/1884 , Y02E10/50
摘要： Certain example embodiments of this invention relate to a front transparent conductive electrode for solar cell devices (e.g., amorphous silicon or a-Si solar cell devices), and/or methods of making the same. Advantageously, certain example embodiments enable high haze to be realized in the top layer of the thin film stack. In certain example embodiments, an insertion layer comprising ITO or AZO is provided between a layer of AZO and a layer of ITO. The AZO may be deposited at room temperature. The insertion layer is provided with an oxygen content selected so that the insertion layer sufficient to alter the crystalline growth of the layer of AZO compared to a situation where no insertion layer is provided. In certain example embodiments, the layer of ITO may be ion-beam treated so as to roughen a surface thereof. The ion beam treating may be performed a voltage sufficient to alter the crystalline growth of the layer of AZO compared to a situation where no insertion layer is provided.
摘要翻译：本发明的一些示例性实施例涉及用于太阳能电池器件（例如，非晶硅或a-Si太阳能电池器件）的前透明导电电极和/或其制造方法。有利地，某些示例性实施例使得能够在薄膜堆叠的顶层中实现高雾度。在某些示例性实施例中，包括ITO或AZO的插入层设置在AZO层和ITO层之间。 AZO可以在室温下沉积。提供了插入层，其选择的氧含量使得插入层足以改变与没有设置插入层的情况相比AZO层的结晶生长。在某些示例性实施例中，ITO层可以进行离子束处理以使其表面变粗糙。与不提供插入层的情况相比，离子束处理可以进行足以改变AZO层的结晶生长的电压。

50. 发明申请

US20110100445A1 High haze transparent contact including insertion layer for solar cells, and/or method of making the same 失效
标题翻译：包括太阳能电池用插入层的高雾度透明接触和/或其制造方法
公开(公告)号：US20110100445A1
公开(公告)日：2011-05-05
申请号：US12591060
申请日：2009-11-05
申请人： Alexey Krasnov
发明人： Alexey Krasnov
IPC分类号： H01L31/02 , H01L31/028 , C23C14/34
CPC分类号： C23C14/5853 , C23C14/086 , C23C14/5806 , H01L31/022466 , H01L31/022475 , H01L31/022483 , H01L31/1884 , Y02E10/50
摘要： Certain example embodiments of this invention relate to a front transparent conductive electrode for solar cell devices (e.g., amorphous silicon or a-Si solar cell devices), and/or methods of making the same. Advantageously, certain example embodiments enable high haze to be realized in the top layer of the thin film stack. In certain example embodiments, an insertion layer comprising ITO or AZO is provided between a layer of AZO and a layer of ITO. The AZO may be deposited at room temperature. The insertion layer is provided with an oxygen content selected so that the insertion layer sufficient to alter the crystalline growth of the layer of AZO compared to a situation where no insertion layer is provided. In certain example embodiments, the layer of ITO may be ion-beam treated so as to roughen a surface thereof. The ion beam treating may be performed a voltage sufficient to alter the crystalline growth of the layer of AZO compared to a situation where no insertion layer is provided.
摘要翻译：本发明的一些示例性实施例涉及用于太阳能电池器件（例如，非晶硅或a-Si太阳能电池器件）的前透明导电电极和/或其制造方法。有利地，某些示例性实施例使得能够在薄膜堆叠的顶层中实现高雾度。在某些示例性实施例中，包括ITO或AZO的插入层设置在AZO层和ITO层之间。 AZO可以在室温下沉积。提供了插入层，其选择的氧含量使得插入层足以改变与没有设置插入层的情况相比AZO层的结晶生长。在某些示例性实施例中，ITO层可以进行离子束处理以使其表面变粗糙。与不提供插入层的情况相比，离子束处理可以进行足以改变AZO层的结晶生长的电压。

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