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41. 发明授权

US06784456B2 Field effect transistor as well as liquid crystal display using the same 有权
标题翻译：场效应晶体管以及使用其的液晶显示器
公开(公告)号：US06784456B2
公开(公告)日：2004-08-31
申请号：US10207765
申请日：2002-07-31
申请人： Kenji Sera
发明人： Kenji Sera
IPC分类号： H01L27108
CPC分类号： H01L29/66757 , H01L21/268 , H01L29/41733 , H01L29/4908 , H01L29/78621 , H01L29/78627 , H01L29/78666 , H01L2029/7863
摘要： A gate-overlap-drain structure is obtained by a single pair of a single impurity implantation process and a single laser anneal process, wherein the improved gate-overlap-drain structure includes lightly activated high impurity concentration regions exhibiting substantially the same function as the lightly doped drain regions, wherein the lightly activated high impurity concentration regions are bounded with high impurity concentration regions serving as source and drain regions. The boundaries are self-aligned to edges of a gate electrode. Side regions of the gate electrode overlap the lightly activated high impurity concentration regions.
摘要翻译：通过单对单个杂质注入工艺和单次激光退火工艺获得栅极 - 重叠 - 漏极结构，其中改进的栅极重叠 - 漏极结构包括轻度活化的高杂质浓度区域，其表现出基本上与轻微地相同的功能掺杂的漏极区域，其中轻度活化的高杂质浓度区域用作用作源极和漏极区域的高杂质浓度区域。边界与栅电极的边缘自对准。栅电极的侧面区域与轻度活化的高杂质浓度区域重叠。

42. 发明授权

US06737676B2 Gate insulated field effect transistor and method of manufacturing the same 失效
标题翻译：栅极绝缘场效应晶体管及其制造方法
公开(公告)号：US06737676B2
公开(公告)日：2004-05-18
申请号：US09901026
申请日：2001-07-10
申请人： Shunpei Yamazaki
发明人： Shunpei Yamazaki
IPC分类号： H01L2904
CPC分类号： H01L27/1214 , G02F2001/136245 , H01L29/66757 , H01L29/78666 , H01L29/78675 , H01L29/78681 , H01L29/78684 , H01L29/78696
摘要： A thin film field effect transistors and manufacturing method for the same are described. The channel region of the transistor is spoiled by an impurity such as oxygen, carbon, nitrogen. The photosensitivity of the channel region is reduced by the spoiling impurity and therefore the transistor is endowed with immunity to illumination incident thereupon which would otherwise impair the normal operation of the transistor. The spoiling impurity is not introduced into transistors which are located in order not to receive light rays.
摘要翻译：对薄膜场效应晶体管及其制造方法进行说明。晶体管的沟道区被诸如氧，碳，氮等杂质所损坏。沟道区的光敏性被破坏杂质减少，因此晶体管具有对其入射的光的免疫，否则会损害晶体管的正常工作。扰流杂质不被引入位于为了不接收光线的晶体管中。

43. 发明授权

US06734499B1 Operation method of semiconductor devices 失效
标题翻译：半导体器件的操作方法
公开(公告)号：US06734499B1
公开(公告)日：2004-05-11
申请号：US09406791
申请日：1999-09-28
申请人： Shunpei Yamazaki
发明人： Shunpei Yamazaki
IPC分类号： H01L2972
CPC分类号： H01L29/66757 , H01L21/0242 , H01L21/0245 , H01L21/02488 , H01L21/02532 , H01L21/02576 , H01L21/02667 , H01L21/268 , H01L29/78618 , H01L29/78666 , Y10S257/914
摘要： An insulated gate field effect transistor comprises a non-single-crystalline semiconductor layer formed on a substrate, a gate electrode is formed on a portion of the surface of said semiconductor layer, and a gate insulating film is disposed between said gate electrode and said semiconductor layer. A non-single-crystalline channel region is defined within said semiconductor layer just below said gate electrode. A source region and a drain region are transformed from and defined within said semiconductor layer immediately adjacent to said channel region in an opposed relation, said source and drain regions being crystallized to a higher degree than that of said channel region by selectively irradiating portions of said semiconductor layer using said gate electrode as a mask.
摘要翻译：绝缘栅场效应晶体管包括形成在衬底上的非单晶半导体层，在所述半导体层的表面的一部分上形成栅电极，并且栅极绝缘膜设置在所述栅电极和所述半导体之间层。在刚好在所述栅电极正下方的所述半导体层内限定非单晶沟道区。源极区域和漏极区域以相反的关系从紧邻所述沟道区域的所述半导体层中变换并限定在所述半导体层中，所述源极区域和漏极区域通过选择性地照射所述第二区域的部分而被结晶到比所述沟道区域的程度更高的程度使用所述栅电极作为掩模的半导体层。

44. 发明授权

US06511871B2 Method of fabricating thin film transistor 失效
标题翻译：制造薄膜晶体管的方法
公开(公告)号：US06511871B2
公开(公告)日：2003-01-28
申请号：US09794770
申请日：2001-02-28
申请人： Seung-Ki Joo , Tae-Kyung Kim
发明人： Seung-Ki Joo , Tae-Kyung Kim
IPC分类号： H01L2100
CPC分类号： H01L29/78696 , H01L29/66757 , H01L29/78618 , H01L29/78666 , H01L29/78675
摘要： The present invention relates to a method of fabricating a thin film transistor in which a metal silicide line generated from Metal Induced Lateral Crystallization is located at the outside of a channel region. The present invention includes the steps of forming a semiconductor layer on a substrate wherein the semiconductor layer has a first region, a channel region and a second region in order, forming a gate insulating layer/a gate electrode on the channel region, doping the first and the second region heavily with impurity, forming a metal film pattern making the first region a metal-offset, and crystallizing the semiconductor layer by means of applying thermal treatment to the semiconductor layer having the metal film.
摘要翻译：本发明涉及一种制造薄膜晶体管的方法，其中由金属诱导横向晶化产生的金属硅化物线位于沟道区的外部。本发明包括在衬底上形成半导体层的步骤，其中半导体层依次具有第一区域，沟道区域和第二区域，在沟道区域上形成栅极绝缘层/栅电极，掺杂第一并且第二区域大量杂质，形成使第一区域成为金属偏移的金属膜图案，并且通过对具有金属膜的半导体层进行热处理使半导体层结晶。

45. 发明申请

US20020182783A1 Semiconductor film, semiconductor device and method for manufacturing same 失效
标题翻译：半导体膜，半导体器件及其制造方法
公开(公告)号：US20020182783A1
公开(公告)日：2002-12-05
申请号：US10157843
申请日：2002-05-31
申请人： Semiconductor Energy Laboratory Co., Ltd.
发明人： Toru Takayama , Kengo Akimoto
IPC分类号： H01L021/339 , H01L021/00 , H01L021/84
CPC分类号： H01L29/66757 , H01L29/78666 , H01L29/78675
摘要： Concerning an art related to a manufacturing method for a semiconductor device having an integrated circuit using thin film transistors on a substrate, a problem is to provide a condition for forming an amorphous silicon film having distortion. In the deposition of an amorphous silicon film using a sputter method, a condition is provided with a frequency of 15 to 25 kHz and a deposition power of 0.5 to 3 kW. This can sufficiently contain Ar at 10null1020/cm3 or more in an amorphous silicon film, thus making possible to form an amorphous silicon film having distortion.
摘要翻译：关于具有在基板上使用薄膜晶体管的集成电路的半导体器件的制造方法的技术，存在的问题是提供一种形成具有变形的非晶硅膜的条件。在使用溅射法沉积非晶硅膜的情况下，提供15至25kHz的频率和0.5至3kw的沉积功率的条件。这在非晶硅膜中可以充分地含有10×10 20 / cm 3以上的Ar，因此能够形成具有变形的非晶硅膜。

46. 发明授权

US06486496B2 Polysilicon thin film transistor structure 有权
标题翻译：多晶硅薄膜晶体管结构
公开(公告)号：US06486496B2
公开(公告)日：2002-11-26
申请号：US09994322
申请日：2001-11-26
申请人： Ting-Chang Chang , Hsiao-Wen Zan , Po-Sheng Shih
发明人： Ting-Chang Chang , Hsiao-Wen Zan , Po-Sheng Shih
IPC分类号： H01L21108
CPC分类号： H01L29/66757 , H01L29/78621 , H01L29/78627 , H01L29/78666 , H01L29/78684
摘要： A method of forming a polysilicon thin film transistor. An amorphous silicon channel layer is formed over an insulating substrate. An active region is patterned out in the amorphous silicon channel layer. An oxide layer and a gate electrode are sequentially formed over the amorphous silicon channel layer. A lightly doped source/drain region is formed in the amorphous silicon channel layer and then a spacer is formed over the gate electrode. A source/drain region is formed in the amorphous silicon channel layer. A portion of the oxide layer above the source/drain region is removed. An isolation spacer is formed on the sidewalls of the spacer. A self-aligned silicide layer is formed at the top section of the spacer and the source/drain region. Finally, a metal-induced lateral crystallization process is conducted to transform the amorphous silicon channel layer into a lateral-crystallization-polysilicon channel layer.
摘要翻译：一种形成多晶硅薄膜晶体管的方法。在绝缘基板上形成非晶硅沟道层。在非晶硅沟道层中形成有源区。在非晶硅沟道层上依次形成氧化物层和栅电极。在非晶硅沟道层中形成轻掺杂的源极/漏极区，然后在栅极上形成间隔物。源极/漏极区域形成在非晶硅沟道层中。除去源极/漏极区上方的氧化物层的一部分。在间隔物的侧壁上形成隔离间隔物。在间隔物的顶部和源极/漏极区域上形成自对准的硅化物层。最后，进行金属诱导的横向结晶工艺以将非晶硅沟道层转变成横向结晶 - 多晶硅沟道层。

47. 发明授权

US06461901B1 Method of forming a thin-film transistor having a high resistance back channel region 有权
标题翻译：形成具有高电阻背沟道区域的薄膜晶体管的方法
公开(公告)号：US06461901B1
公开(公告)日：2002-10-08
申请号：US09391514
申请日：1999-09-08
申请人： Kesao Noguchi
发明人： Kesao Noguchi
IPC分类号： H01L2100
CPC分类号： H01L29/66765 , H01L29/78666 , H01L29/78669
摘要： A thin-film transistor is provided, which has a simple configuration and improved off-characteristic, operational reliability, and fabrication yield. This transistor includes a substrate and a layered structure formed on the substrate. The layered structure includes a semiconductor film, a gate insulating film located on a first side of the semiconductor film to be overlapped with the semiconductor film, a gate electrode located on the gate insulating film on the first side of the semiconductor film to be selectively overlapped with the semiconductor film, a source electrode located on a second side of the semiconductor film to be electrically connected to the semiconductor film, and a drain electrode located on the second side of the semiconductor film to be electrically connected to the semiconductor film and to be apart from the source electrode. The semiconductor film has a back channel section between opposite ends of the source and drain regions. The back channel section includes a high-resistance part generated by doping n- and p-type impurities.
摘要翻译：提供了薄膜晶体管，其具有简单的配置和改进的非特性，操作可靠性和制造产量。该晶体管包括基板和形成在基板上的分层结构。层状结构包括半导体膜，位于半导体膜的与半导体膜重叠的第一侧上的栅极绝缘膜，位于半导体膜的第一侧上的栅极绝缘膜上的栅极，以选择性地重叠通过半导体膜，位于半导体膜的与半导体膜电连接的第二侧的源电极和位于半导体膜的第二面上的漏电极，与半导体膜电连接，除了源电极。半导体膜在源区和漏区的相对端之间具有背沟道区。背沟道部分包括通过掺杂n型和p型杂质产生的高电阻部分。

48. 发明授权

US06362493B1 Field-effect transistor and fabrication method thereof and image display apparatus 有权
标题翻译：场效应晶体管及其制造方法和图像显示装置
公开(公告)号：US06362493B1
公开(公告)日：2002-03-26
申请号：US09630025
申请日：2000-07-31
申请人： Hiroshi Hayama , Shinichi Nishida
发明人： Hiroshi Hayama , Shinichi Nishida
IPC分类号： H01L2904
CPC分类号： G02F1/136286 , G02F1/136209 , G02F1/1368 , G02F2001/13629 , H01L29/458 , H01L29/78609 , H01L29/78666
摘要： An amorphous silicon thin film transistor for active matrix liquid crystal displays according to the present invention comprises a transparent conductive film, which is formed together with a picture element electrode, a metal film, which is formed together with a signal wiring, a multi-layer film, and an insulation substrate. The multi-layer film, which consists of a semi-conductor film, a gate insulation film and a gate metal film, is placed on the transparent conductive film and metal film overlapping respectively at both edges of the multi-layer film.
摘要翻译：根据本发明的有源矩阵液晶显示器用非晶硅薄膜晶体管包括与像素电极一起形成的透明导电膜，与信号布线一起形成的金属膜，多层膜和绝缘基板。将由半导体膜，栅极绝缘膜和栅极金属膜构成的多层膜放置在分别在多层膜的两个边缘处的透明导电膜和金属膜上重叠。

49. 发明授权

US06281520B1 Gate insulated field effect transistors and method of manufacturing the same 失效
标题翻译：栅极绝缘场效应晶体管及其制造方法
公开(公告)号：US06281520B1
公开(公告)日：2001-08-28
申请号：US09149291
申请日：1998-09-09
申请人： Shunpei Yamazaki
发明人： Shunpei Yamazaki
IPC分类号： H01L2904
CPC分类号： H01L27/1214 , G02F2001/136245 , H01L29/66757 , H01L29/78666 , H01L29/78675 , H01L29/78681 , H01L29/78684 , H01L29/78696
摘要： A thin film field effect transistors and manufacturing method for the same are described. The channel region of the transistor is spoiled by an impurity such as oxygen, carbon, nitrogen. The photosensitivity of the channel region is reduced by the spoiling impurity and therefore the transistor is endowed with immunity to illumination incident thereupon which would otherwise impair the normal operation of the transistor. The spoiling impurity is not introduced into transistors which are located in order not to receive light rays.
摘要翻译：对薄膜场效应晶体管及其制造方法进行说明。晶体管的沟道区被诸如氧，碳，氮等杂质所损坏。沟道区的光敏性被破坏杂质减少，因此晶体管具有对其入射的光的免疫，否则会损害晶体管的正常工作。扰流杂质不被引入位于为了不接收光线的晶体管中。

50. 发明授权

US6069370A Field-effect transistor and fabrication method thereof and image display apparatus 失效
公开(公告)号：US6069370A
公开(公告)日：2000-05-30
申请号：US824317
申请日：1997-03-26
申请人： Hiroshi Hayama , Shinichi Nishida
发明人： Hiroshi Hayama , Shinichi Nishida
IPC分类号： G02F1/1362 , G02F1/1368 , H01L29/45 , H01L29/786 , H01L29/04 , H01L31/036 , H01L31/0376 , H01L31/20
CPC分类号： G02F1/136286 , G02F1/1368 , H01L29/458 , H01L29/78609 , H01L29/78666 , G02F1/136209 , G02F2001/13629
摘要： An amorphous silicon thin film transistor for active matrix liquid crystal displays according to the present invention comprises a transparent conductive film, which is formed together with a picture element electrode, a metal film, which is formed together with a signal wiring, a multi-layer film, and an insulation substrate. The multi-layer film, which consists of a semi-conductor film, a gate insulation film and a gate metal film, is placed on the transparent conductive film and metal film overlapping respectively at both edges of the multi-layer film.

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