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41. 发明申请

US20150132872A1 DEVICE AND METHOD FOR THE SURFACE TREATMENT OF A SUBSTRATE AND METHOD FOR PRODUCING AN OPTOELECTRONIC COMPONENT 审中-公开
标题翻译：用于表面处理基板的设备和方法以及用于生产光电元件的方法
公开(公告)号：US20150132872A1
公开(公告)日：2015-05-14
申请号：US14397207
申请日：2013-04-26
申请人： OSRAM GmbH
发明人： Juergen Bauer , Gerhard Doell , Klaus-Dieter Bauer , Philipp Erhard , Frank Vollkommer
IPC分类号： C23C16/455 , H01L51/00 , H01L51/44 , H01L51/52 , H01L51/56
CPC分类号： C23C16/45525 , C23C16/407 , C23C16/455 , C23C16/45551 , C23C16/545 , H01L21/02565 , H01L21/0262 , H01L51/0002 , H01L51/0021 , H01L51/0096 , H01L51/44 , H01L51/441 , H01L51/448 , H01L51/5206 , H01L51/5221 , H01L51/5237 , H01L51/5256 , H01L51/5262 , H01L51/56 , H01L2224/16 , H01L2924/12044 , H01L2924/00
摘要： Various embodiments may relate to a device for the surface treatment of a substrate, including a processing head, which is mounted rotatably about an axis of rotation, and which comprises multiple gas outlets, which are at least partially implemented on a radial outer edge of the processing head.
摘要翻译：各种实施例可以涉及用于表面处理基板的装置，包括可围绕旋转轴线可旋转地安装的处理头，并且包括多个气体出口，其至少部分地实现在加工头。

42. 发明授权

US09022270B2 Roll-to-roll substrates transferring unit and method of processing substrates using the substrates transferring unit 有权
标题翻译：卷对卷基板转印单元和使用基板转印单元处理基板的方法
公开(公告)号：US09022270B2
公开(公告)日：2015-05-05
申请号：US13535097
申请日：2012-06-27
申请人： Jae-Hyuk Chang
发明人： Jae-Hyuk Chang
IPC分类号： B65H20/00 , C23C14/56 , C23C16/54 , B05D3/04
CPC分类号： B65H20/02 , B05D3/0493 , B05D2252/02 , B65G2207/10 , B65H23/26 , B65H27/00 , B65H2301/44334 , B65H2301/5132 , B65H2301/5322 , B65H2404/186 , B65H2404/19 , B65H2404/5331 , C23C14/562 , C23C16/545 , Y10S242/906
摘要： A flexible and continuous substrates-conveying sheet has a plurality of to be processed substrates disposed on or in it. A nondestructive transferring unit includes a plurality of first transferring rolls and a plurality of second transferring rolls. The first transferring rolls make contact with a first surface of the substrates-conveying sheet where that surface can have electrostatically-induced charge formed thereon. Each of the first transferring rolls includes a first central portion charged with a positive electric charge and a first outer portion surrounding the first central portion. The second transferring rolls make contact with the first surface of the substrates-conveying sheet. The second transferring rolls are disposed alternately with the first transferring rolls. Each of the second transferring rolls includes a second central portion charged with a negative electric charge and a second outer portion surrounding the second central portion.
摘要翻译：柔性且连续的基板输送板具有设置在其上或其中的多个待处理基板。非破坏性转印单元包括多个第一转印辊和多个第二转印辊。第一转印辊与基板输送片的第一表面接触，该表面可以在其上形成静电感应电荷。每个第一转印辊包括充有正电荷的第一中心部分和围绕第一中心部分的第一外部部分。第二转印辊与基板输送片的第一表面接触。第二转印辊与第一转印辊交替设置。每个第二转印辊包括带有负电荷的第二中心部分和围绕第二中心部分的第二外部部分。

43. 发明授权

US09006972B2 Microplasma generator and methods therefor 有权
标题翻译：微生物发生器及其方法
公开(公告)号：US09006972B2
公开(公告)日：2015-04-14
申请号：US13266396
申请日：2010-04-27
申请人： Jeffrey A. Hopwood
发明人： Jeffrey A. Hopwood
IPC分类号： H01J19/80 , H01J7/46 , H01L31/18 , C23C16/24 , C23C16/511 , C23C16/54 , H01J37/32 , H05H1/46
CPC分类号： H01L31/1876 , C23C16/24 , C23C16/511 , C23C16/545 , H01J37/32366 , H01J37/32825 , H05H1/46 , H05H2001/4622 , Y02E10/50 , Y02P70/521
摘要： A low-temperature, atmospheric-pressure microplasma generator comprises at least one strip of metal on a dielectric substrate. A first end of the strip is connected to a ground plane and the second end of the strip is adjacent to a grounded electrode, with a gap being defined between the second end of the strip and the grounded electrode. High frequency power is supplied to the strip. The frequency is selected so that the length of the strip is an odd integer multiple of ¼ of the wavelength traveling on the strip. A microplasma forms in the gap between the second end of the strip and the grounded electrode due to electric fields in that region. A microplasma generator array comprises a plurality of strongly-coupled resonant strips in close proximity to one another. At least one of the strips has an input for high-frequency electrical power. The remaining strips resonate due to coupling from the at least one powered strip. The array can provide a continuous line or ring of plasma. The microplasma generator can be used to alter the surface of a substrate, such as by adding material (deposition), removal of material (etching), or modifying surface chemistry.
摘要翻译：低温大气压微量发生器在电介质基底上包括至少一条金属条。带的第一端连接到接地平面，并且带的第二端与接地电极相邻，在带的第二端和接地电极之间限定间隙。高频电源被提供给带。选择频率使得条的长度是在带上行进的波长的1/4的奇整数倍。由于该区域中的电场，在条带的第二端和接地电极之间的间隙中形成微米。微量发生器阵列包括彼此靠近的多个强耦合谐振条。至少一个条具有用于高频电力的输入。剩余的条由于至少一个动力带的联接而共振。阵列可以提供连续的等离子体线或环。微量发生器可以用于改变基底的表面，例如通过添加材料（沉积），去除材料（蚀刻）或改变表面化学。

44. 发明授权

US08986795B2 Manufacturing method of functional film 有权
标题翻译：功能膜的制造方法
公开(公告)号：US08986795B2
公开(公告)日：2015-03-24
申请号：US14012424
申请日：2013-08-28
申请人： FUJIFILM Corporation
发明人： Jun Fujinawa
IPC分类号： C23C16/44 , C23C16/509 , C23C16/54
CPC分类号： C23C16/4408 , C23C16/4401 , C23C16/509 , C23C16/545
摘要： When manufacturing a functional film to be formed by using a plasma CVD method while transporting an elongated substrate in a longitudinal direction, an object is to provide a manufacturing method which can prevent a product or the inside of a film forming system from being contaminated during the exposure to air after the film forming is stopped, and can improve productivity and a product quality. The object is achieved by introducing a gas for the exposure to the air into the film forming system after hindering a surface of a film forming electrode from coming into contact with the air inside the film forming system.
摘要翻译：当制造通过使用等离子体CVD法形成的功能膜，同时沿长度方向输送细长基板时，目的是提供一种制造方法，其可以防止成膜系统中的产品或内部被污染成膜后的空气暴露停止，可以提高生产率和产品质量。该目的是通过在阻碍成膜电极的表面与成膜系统内的空气接触之后引入用于将空气暴露于成膜系统中的气体来实现的。

45. 发明申请

US20150079271A1 SYSTEM AND METHODS FOR PROCESSING A SUBSTRATE 有权
标题翻译：用于处理基板的系统和方法
公开(公告)号：US20150079271A1
公开(公告)日：2015-03-19
申请号：US14364687
申请日：2011-12-21
申请人： Uwe Hermanns , Neil Morrison , Tobias Stolley , Volker Hacker
发明人： Uwe Hermanns , Neil Morrison , Tobias Stolley , Volker Hacker
IPC分类号： C23C16/503 , C23C16/54 , C23C16/52
CPC分类号： C23C16/503 , C23C14/54 , C23C14/562 , C23C14/564 , C23C16/4401 , C23C16/52 , C23C16/545
摘要： According to the present disclosure, a substrate processing apparatus for processing a flexible substrate including a vacuum chamber configured for being evacuated and being configured for having a process gas provided therein, a processing module adapted to process the flexible substrate, wherein the processing module is provided within the vacuum chamber, and a discharging assembly configured to generate a flow of charged particles to discharge the flexible substrate is provided. The discharging assembly is configured to generate an electric field for ionizing a processing gas.
摘要翻译：根据本公开，一种用于处理包括真空室的柔性基板的基板处理装置，所述真空室被构造成被抽真空并且被配置为具有设置在其中的处理气体;处理模块，其适于处理柔性基板，其中提供处理模块并且设置有用于产生带电粒子流以排出柔性基板的排出组件。放电组件被配置为产生用于电离处理气体的电场。

46. 发明申请

US20150050478A1 GAS BARRIER FILM AND MANUFACTURING METHOD OF GAS BARRIER FILM 审中-公开
标题翻译：气体阻隔膜气体阻隔膜和制造方法
公开(公告)号：US20150050478A1
公开(公告)日：2015-02-19
申请号：US14498228
申请日：2014-09-26
申请人： FUJIFILM Corporation
发明人： Yoshihiko MOCHIZUKI , Jun FUJINAWA
IPC分类号： C23C16/34 , C23C16/50
CPC分类号： C23C16/345 , C23C16/0272 , C23C16/50 , C23C16/509 , C23C16/545 , Y10T428/24975
摘要： A gas barrier film including a substrate of which the surface is formed of an organic material; an inorganic film which is formed on the substrate and contains silicon nitride; and a mixed layer which is formed in an interface between the substrate and the inorganic film, and contains components derived from the organic material and the inorganic film, wherein a compositional ratio N/Si between nitrogen and silicon contained in the inorganic film is 1.00 to 1.35, the inorganic film has a film density of 2.1 g/cm3 to 2.4 g/cm3 and a film thickness of 10 nm to 60 nm, and the mixed layer has a thickness of 5 nm to 40 nm.
摘要翻译：一种气体阻隔膜，包括其表面由有机材料形成的基底; 形成在基板上并含有氮化硅的无机膜; 以及形成在基板和无机膜之间的界面中的混合层，并且含有源自有机材料和无机膜的成分，其中无机膜中所含的氮和硅之间的组成比N / Si为1.00〜 1.35，无机膜的膜密度为2.1g / cm 3〜2.4g / cm 3，膜厚为10nm〜60nm，混合层的厚度为5nm〜40nm。

47. 发明申请

US20150044454A1 LAMINATED FILM, ORGANIC ELECTROLUMINESCENCE DEVICE, PHOTOELECTRIC CONVERTER, AND LIQUID CRYSTAL DISPLAY 有权
标题翻译：层压膜，有机电致发光器件，光电转换器和液晶显示器
公开(公告)号：US20150044454A1
公开(公告)日：2015-02-12
申请号：US14385818
申请日：2013-03-21
申请人： SUMITOMO CHEMICAL COMPANY, LIMITED
发明人： Akira Hasegawa
IPC分类号： G02F1/1339 , H01L31/0203 , C04B35/565 , H01L51/52
CPC分类号： G02F1/1339 , B32B15/08 , B32B27/281 , B32B27/302 , B32B27/306 , B32B27/32 , B32B27/325 , B32B27/34 , B32B27/36 , B32B27/365 , B32B2255/10 , B32B2255/20 , B32B2307/306 , B32B2307/31 , B32B2307/412 , B32B2307/7242 , B32B2439/40 , B32B2439/60 , C04B35/565 , C23C16/18 , C23C16/30 , C23C16/401 , C23C16/45523 , C23C16/50 , C23C16/505 , C23C16/545 , C23C28/04 , C23C28/42 , C23C28/44 , G02F2201/501 , H01L31/0203 , H01L31/02322 , H01L31/049 , H01L31/055 , H01L51/448 , H01L51/5237 , H01L51/5253 , Y02E10/52 , Y10T428/265 , Y10T428/31667
摘要： Provided is a laminate film having a substrate and at least one thin film layer which has been formed on at least one surface of the substrate, in which at least one of the thin film layer contains silicon atoms, oxygen atoms, and carbon atoms.
摘要翻译：本发明提供一种具有基板和至少一个薄膜层的层压膜，该薄膜层至少形成在基板的至少一个表面上，其中至少一个薄膜层含有硅原子，氧原子和碳原子。

48. 发明申请

US20150031157A1 METHOD AND SYSTEM FOR CONTINUOUS ATOMIC LAYER DEPOSITION 有权
标题翻译：连续原子层沉积的方法和系统
公开(公告)号：US20150031157A1
公开(公告)日：2015-01-29
申请号：US14339058
申请日：2014-07-23
申请人： UChicago Argonne, LLC
发明人： Jeffrey W. Elam , Angel Yanguas-Gil , Joseph A. Libera
IPC分类号： C23C16/455 , C23C16/442 , H01L51/00 , H01L51/56 , H01L51/44
CPC分类号： C23C16/45544 , C23C16/442 , C23C16/45527 , C23C16/45551 , C23C16/545 , H01L21/0228 , H01L21/31138 , H01L21/67069 , H01L51/001 , H01L51/0029 , H01L51/448 , H01L51/56 , Y02E10/549 , Y02P70/521
摘要： A system and method for continuous atomic layer deposition. The system and method includes a housing, a moving bed which passes through the housing, a plurality of precursor gases and associated input ports and the amount of precursor gases, position of the input ports, and relative velocity of the moving bed and carrier gases enabling exhaustion of the precursor gases at available reaction sites.
摘要翻译：一种用于连续原子层沉积的系统和方法。该系统和方法包括壳体，穿过壳体的移动床，多个前体气体和相关联的输入端口以及前体气体的量，输入端口的位置以及移动床和载体气体的相对速度，使得能够前体气体在可用的反应位点耗尽。

49. 发明授权

US08926756B2 Strip passing apparatus, apparatus for treating surface of strip with the same, and method for treating surface of strip 有权
标题翻译：带材通过装置，用于处理带材表面的装置以及处理带材表面的方法
公开(公告)号：US08926756B2
公开(公告)日：2015-01-06
申请号：US13516753
申请日：2010-12-24
申请人： Dong-Yoeul Lee , Mun-Jong Eom , Kyoung-Bo Kim , Yong-Hwa Jung , Woo-Sung Jung , Young-Jin Kwak , Tae-Yeob Kim , Kyung-Hoon Nam , Sang-Cheol Lee , Sang-Hoon Park , Yang-Woo Nam
发明人： Dong-Yoeul Lee , Mun-Jong Eom , Kyoung-Bo Kim , Yong-Hwa Jung , Woo-Sung Jung , Young-Jin Kwak , Tae-Yeob Kim , Kyung-Hoon Nam , Sang-Cheol Lee , Sang-Hoon Park , Yang-Woo Nam
IPC分类号： C23C16/54 , C23C14/56
CPC分类号： C23C14/562 , C23C16/545
摘要： A passing apparatus includes: upper and lower sealing rolls dealing with variations in a thickness of a proceeding strip, the upper and lower sealing rolls allowing the strip to pass; and a strip sealing unit dealing with variations in a width of the proceeding strip, the strip sealing unit cooperating with the upper and lower sealing rolls to seal the proceeding strip passing through a chamber in a state in which the strip sealing unit surrounds the proceeding strip.
摘要翻译：通过装置包括：上下密封辊，其处理前述条的厚度变化，上下密封辊允许条带通过; 以及条形密封单元，处理前述条带的宽度变化，条带密封单元与上密封辊和下密封辊协作，以在条带密封单元围绕前述条带的状态下密封通过室的前述条带。

50. 发明授权

US08906813B2 SiOx process chemistry development using microwave plasma CVD 有权
标题翻译：使用微波等离子体CVD的SiOx工艺化学开发
公开(公告)号：US08906813B2
公开(公告)日：2014-12-09
申请号：US13886175
申请日：2013-05-02
申请人： Tae Kyung Won , Seon-Mee Cho , Soo Young Choi , Beom Soo Park , Dong-Kil Yim , John M. White , Jozef Kudela
发明人： Tae Kyung Won , Seon-Mee Cho , Soo Young Choi , Beom Soo Park , Dong-Kil Yim , John M. White , Jozef Kudela
IPC分类号： H01L21/31 , H01L21/02 , C23C16/40 , C23C16/455 , C23C16/511 , C23C16/54
CPC分类号： H01L21/0262 , C23C16/401 , C23C16/45578 , C23C16/511 , C23C16/545 , H01L21/02164 , H01L21/02211 , H01L21/02274
摘要： Methods for processing a substrate are described herein. Methods can include positioning a substrate in a processing chamber, maintaining the processing chamber at a temperature below 400° C., flowing a reactant gas comprising either a silicon hydride or a silicon halide and an oxidizing precursor into the process chamber, applying a microwave power to create a microwave plasma from the reactant gas, and depositing a silicon oxide layer on at least a portion of the exposed surface of a substrate.
摘要翻译：本文描述了用于处理衬底的方法。方法可以包括将基底定位在处理室中，将处理室保持在低于400℃的温度，使包含硅氢化物或硅卤化物的反应气体和氧化前体流入处理室，施加微波功率以从反应气体中产生微波等离子体，以及在衬底的暴露表面的至少一部分上沉积氧化硅层。

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