会员体验
专利管家(专利管理)
工作空间(专利管理)
风险监控(情报监控)
数据分析(专利分析)
侵权分析(诉讼无效)
联系我们
交流群
官方交流:
QQ群: 891211   
微信请扫码    >>>
现在联系顾问~
热词
    • 44. 发明申请
    • Method for sealing and backside releasing of microelectromechanical systems
    • 微机电系统的密封和背面释放方法
    • US20070281381A1
    • 2007-12-06
    • US11807848
    • 2007-05-30
    • Farrokh Ayazi
    • Farrokh Ayazi
    • H01L21/00
    • B81C1/00285B81B2207/015B81C1/00476
    • Disclosed are methods for fabricating encapsulated microelectromechanical systems (MEMS) devices. A MEMS device fabricated on a CMOS wafer is encapsulated using an etch resistant thin film layer prior to the release of the MEMS device. Once CMOS processing is completed, the wafer is etched to release the MEMS device. If the MEMS is fabricated on a silicon-on-insulator (SOI) wafer, the buried oxide of the SOI wafer acts as an etch stop for the etching. A sacrificial layer(s) is accessed and removed from the back side of the wafer, while the front side of the wafer is protected by a masking layer. The MEMS device is released without having any detrimental effects on CMOS components. If desired, the wafer can be mounted on another substrate to provide hermetic or semi-hermetic sealing of the device.
    • 公开了用于制造封装的微机电系统(MEMS)装置的方法。 在MEMS器件释放之前,使用耐蚀刻薄膜层在CMOS晶片上制造的MEMS器件被封装。 一旦CMOS处理完成,则蚀刻晶片以释放MEMS器件。 如果MEMS制造在绝缘体上硅(SOI)晶片上,则SOI晶片的掩埋氧化物用作蚀刻的蚀刻停止。 牺牲层从晶片的背面进入和移除,而晶片的前侧由掩模层保护。 MEMS器件被释放,不会对CMOS元件产生任何不利影响。 如果需要,晶片可以安装在另一基板上,以提供装置的密封或半封闭密封。