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    • 41. 发明申请
    • SPIN-TRANSFER TORQUE MEMORY SELF-REFERENCE READ AND WRITE ASSIST METHODS
    • 转子转矩记忆自读参考读写方法
    • US20110026317A1
    • 2011-02-03
    • US12903305
    • 2010-10-13
    • Wenzhong ZhuYiran ChenXiaobin WangZheng GaoHaiwen XiDimitar V. Dimitrov
    • Wenzhong ZhuYiran ChenXiaobin WangZheng GaoHaiwen XiDimitar V. Dimitrov
    • G11C11/00
    • G11C11/1675G11C11/1659G11C11/1673
    • A spin-transfer torque memory apparatus and self-reference read and write assist schemes are described. One method of self-reference reading a spin-transfer torque memory unit includes applying a first read current through a magnetic tunnel junction data cell and forming a first bit line read voltage. A magnetic field is applied through the free magnetic layer the forming a magnetic field modified magnetic tunnel junction data cell. Then a second read current is applied thorough the magnetic field modified magnetic tunnel junction data cell forming a second bit line read voltage and compared with the first bit line read voltage to determine whether the first resistance state of the magnetic tunnel junction data cell was a high resistance state or low resistance state. Methods of applying a destabilizing magnetic field to the MTJ and then writing the desired resistance state are also disclosed.
    • 描述了自旋转移力矩存储装置和自参考读和写辅助方案。 读取自旋转移转矩存储单元的一种自参考方法包括:通过磁性隧道结数据单元施加第一读取电流并形成第一位线读取电压。 通过自由磁层施加磁场,形成磁场修正磁隧道结数据单元。 然后通过形成第二位线读取电压的磁场修正磁隧道结数据单元施加第二读取电流,并与第一位线读取电压进行比较,以确定磁性隧道结数据单元的第一电阻状态是否为高 电阻状态或低电阻状态。 还公开了将去稳定磁场施加到MTJ然后写入期望的电阻状态的方法。
    • 49. 发明授权
    • Giant magnetoresistive sensor with a CrMnPt pinning layer and a NiFeCr seed layer
    • 具有CrMnPt钉扎层和NiFeCr种子层的巨磁阻传感器
    • US06498707B1
    • 2002-12-24
    • US09367952
    • 1999-08-25
    • Zheng GaoSong S. XueSining Mao
    • Zheng GaoSong S. XueSining Mao
    • G11B539
    • B82Y25/00B82Y10/00G01R33/093G11B5/3903G11B2005/3996
    • A giant magnetoresistive stack (10) for use in a magnetic read head includes a NiFeCr seed layer (12), a ferromagnetic free layer (14), a nonmagnetic spacer layer (16), a ferromagnetic pinned layer (18), and a CrMnPt pinning layer (20). The ferromagnetic free layer (14) has a rotatable magnetic moment and is positioned adjacent to the NiFeCr seed layer (12). The ferromagnetic pinned layer (18) has a fixed magnetic moment and is positioned adjacent to the CrMnPt pinning layer (20). The nonmagnetic spacer layer (16) is positioned between the free layer (14) and the pinned layer (18). The combination of layers with their respective atomic percentage compositions and thicknesses results in a GMR ratio of at least 12%.
    • 用于磁读头的巨磁阻堆叠(10)包括NiFeCr晶种层(12),铁磁自由层(14),非磁性间隔层(16),铁磁性钉扎层(18)和CrMnPt 钉扎层(20)。 铁磁自由层(14)具有可旋转的磁矩并且被定位成与NiFeCr晶种层(12)相邻。 铁磁钉扎层(18)具有固定的磁矩并且邻近CrMnPt钉扎层(20)定位。 非磁性间隔层(16)位于自由层(14)和被钉扎层(18)之间。 层与其各自的原子百分比组成和厚度的组合导致GMR比至少为12%。