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41. 发明申请

US20050005525A1 Non-polymeric organic particles for chemical mechanical planarization 失效
标题翻译：用于化学机械平面化的非聚合有机颗粒
公开(公告)号：US20050005525A1
公开(公告)日：2005-01-13
申请号：US10734232
申请日：2003-12-15
申请人： Yuzhuo Li , Atanu Chowdhury , Kwok Tang , Guomin Bian , Krishnayya Cheemalapati
发明人： Yuzhuo Li , Atanu Chowdhury , Kwok Tang , Guomin Bian , Krishnayya Cheemalapati
IPC分类号： C09G1/02 , C09K3/14 , H01L21/306 , H01L21/321
CPC分类号： H01L21/3212 , C09G1/02 , C09K3/1409 , C09K3/1463
摘要： An abrasive composition comprising non-polymeric organic particles that is useful for chemical mechanical planarization (CMP), and which can widely be used in the semiconductor industry. The inventive compositions preferably comprise soft water in combination with 0.001-20 w/w % of non-polymeric organic particles, 0.1-10 w/w % of an oxidizing agent, 0.05-10 w/w % of a chelating agent, 0.01-10 w/w % of a surfactant, and 0-10 w/w % of a passivation agent at a pH in the range of 2-12, wherein said percentages are w/w (weight/weight) percentages, based on the total weight of said compositions. The abrasive compositions provide an efficient polishing rate, excellent selectivity and good surface quality when utilized as a new abrasive composition in CMP applications.
摘要翻译：包含可用于化学机械平面化（CMP）的非聚合有机颗粒并且可广泛用于半导体工业中的磨料组合物。本发明的组合物优选包含与0.001-20w / w％的非聚合有机颗粒，0.1-10w / w％的氧化剂，0.05-10w / w％的螯合剂，0.01- 10w / w％的表面活性剂和0-10w / w％的钝化剂，其pH为2-12，其中所述百分比是w / w（重量/重量）百分比，基于总计所述组合物的重量。当用作CMP应用中的新磨料组合物时，磨料组合物提供了有效的抛光速率，优异的选择性和良好的表面质量。

42. 发明授权

US06258721B1 Diamond slurry for chemical-mechanical planarization of semiconductor wafers 有权
标题翻译：用于半导体晶片化学机械平面化的金刚石浆料
公开(公告)号：US06258721B1
公开(公告)日：2001-07-10
申请号：US09472104
申请日：1999-12-27
申请人： Yuzhuo Li , David Bruce Cerutti , Donald Joseph Buckley, Jr. , Earl Royce Tyre, Jr. , Jason J. Keleher , Richard J. Uriarte , Ferenc Horkay
发明人： Yuzhuo Li , David Bruce Cerutti , Donald Joseph Buckley, Jr. , Earl Royce Tyre, Jr. , Jason J. Keleher , Richard J. Uriarte , Ferenc Horkay
IPC分类号： H01L21302
CPC分类号： H01L21/3212 , H01L21/02074
摘要： The multistage process for the chemical-mechanical planarization (CMP) of Cu commences with forming a primary aqueous or non-aqueous (e.g., using alcohols and ketones as non-aqueous carriers) slurry from (i) between about 0 and 7 wt-% of an oxidizer, (ii) between 0 and 7 wt-% of a chelating agent, (iii) between about 0 and 5 wt-% of a surfactant, (iv) between about 0.001 and 5 wt-% diamond particles having an average particle size not substantially above about 0.4 &mgr;, and (v) an amount of a pH adjustment agent so that the aqueous slurry has a pH of between about 3 and 10, and advantageously about 5). The Cu of the semiconductor wafer then is subjected to CMP using the primary aqueous slurry and then is subjected to a cleaning operation. Next, a secondary aqueous slurry from (i) between about 0 and 5 wt-% of an a hydroxyl amine compound, (ii) between about 0 and 7 wt-% of a chelating agent, (iii) between about 0 and 5 wt-% of a surfactant, (iv) between about 0.001 and 5 wt-% diamond particles having an average particle size not substantially above about 0.4 &mgr;, and (v) an amount of a pH adjustment agent so that the aqueous slurry has a pH of between about 4 and 10, and advantageously about 8.5 pH. The semiconductor wafer then is subjected to CMP using said secondary aqueous slurry. Thereafter, the semiconductor wafer again is subjected to a cleaning operation.
摘要翻译： Cu的化学 - 机械平面化（CMP）的多阶段过程开始于形成主要含水或非水性（例如，使用醇和酮作为非水性载体）浆料，其从（i）约0至7重量％的氧化剂，（ii）0至7重量％的螯合剂，（iii）约0至5重量％的表面活性剂，（iv）约0.001至5重量％的具有平均值的金刚石颗粒颗粒大小基本上不超过约0.4μm，和（v）一定量的pH调节剂，使得含水浆液的pH值在约3至10之间，有利地约为5）。然后使用初级含水浆料对半导体晶片的Cu进行CMP处理，然后进行清洁操作。接下来，从（i）约0至5重量％的羟胺化合物，（ii）约0至7重量％的螯合剂，（iii）约0至5重量％ - 表面活性剂的％，（iv）约0.001至5重量％的平均粒度基本上不超过约0.4μm的金刚石颗粒，和（v）一定量的pH调节剂，使得水性浆料具有pH 在约4至10之间，并且有利地约8.5 pH。然后使用所述第二水性浆料对半导体晶片进行CMP。此后，再次对半导体晶片进行清洁操作。

43. 发明授权

US06242351B1 Diamond slurry for chemical-mechanical planarization of semiconductor wafers 有权
标题翻译：用于半导体晶片化学机械平面化的金刚石浆料
公开(公告)号：US06242351B1
公开(公告)日：2001-06-05
申请号：US09591189
申请日：2000-06-08
申请人： Yuzhuo Li , David Bruce Cerutti , Donald Joseph Buckley, Jr. , Earl Royce Tyre, Jr. , Jason J. Keleher , Richard J. Uriarte , Ferenc Horkay
发明人： Yuzhuo Li , David Bruce Cerutti , Donald Joseph Buckley, Jr. , Earl Royce Tyre, Jr. , Jason J. Keleher , Richard J. Uriarte , Ferenc Horkay
IPC分类号： H01L21302
CPC分类号： C09G1/02 , C09K3/1409 , C09K3/1463 , H01L21/02074 , H01L21/3212
摘要： The multistage process for the chemical-mechanical planarization (CMP) of Cu commences with forming a primary aqueous or non-aqueous (e.g., using alcohols and ketones as non-aqueous carriers) slurry from (i) between about 0 and 7 wt-% of an oxidizer, (ii) between 0 and 7 wt-% of one or more of a complexing agent or a passivating agent, (iii) between about 0 and 5 wt-% of a surfactant, (iv) between about 0.001 and 5 wt-% diamond particles having an average particle size not substantially above about 0.4 &mgr;m, and (v) an amount of a pH adjustment agent so that the aqueous slurry has a pH of between about 3 and 10, and advantageously about 5). The Cu of the semiconductor wafer then is subjected to CMP using the primary aqueous slurry and then is subjected to a cleaning operation. Next, a secondary aqueous slurry from (i) between about 0 and 7 wt-% of one or more a complexing agent or a passivating agent, (ii) between about 0 and 5 wt-% of a surfactant, (iii) between about 0.001 and 5 wt-% diamond particles having an average particle size not substantially above about 0.4 &mgr;m, and (iv) an amount of a pH adjustment agent so that the aqueous slurry has a pH of between about 4 and 10, and advantageously about 8.5 pH. The semiconductor wafer then is subjected to CMP using said secondary aqueous slurry. Thereafter, the semiconductor wafer again is subjected to a cleaning operation.
摘要翻译： Cu的化学 - 机械平面化（CMP）的多阶段过程开始于形成主要含水或非水性（例如，使用醇和酮作为非水性载体）浆料，其从（i）约0至7重量％的氧化剂，（ii）0至7重量％的一种或多种络合剂或钝化剂，（iii）约0至5重量％的表面活性剂，（iv）约0.001至5重量％具有基本上不超过约0.4μm的平均粒度的重量％金刚石颗粒，和（v）一定量的pH调节剂，使得所述含水浆料的pH为约3至10，并且有利地为约5）。然后使用初级含水浆料对半导体晶片的Cu进行CMP处理，然后进行清洁操作。接下来，从（i）约0至7重量％的一种或多种络合剂或钝化剂的二次含水浆料，（ii）约0至5重量％的表面活性剂之间，（iii）介于约 0.001和5重量％的具有基本上不超过约0.4μm的平均粒度的金刚石颗粒，和（iv）一定量的pH调节剂，使得所述含水浆料的pH为约4至10，有利地为约8.5 pH值。然后使用所述第二水性浆料对半导体晶片进行CMP。此后，再次对半导体晶片进行清洁操作。

44. 发明授权

US10392531B2 Process for removing a bulk material layer from a substrate and a chemical mechanical polishing agent suitable for this process 有权
公开(公告)号：US10392531B2
公开(公告)日：2019-08-27
申请号：US13510830
申请日：2010-11-25
申请人： Vijay Immanuel Raman , Sophia Ebert , Mario Brands , Yongqing Lan , Philipp Zacharias , Ilshat Gubaydullin , Yuzhuo Li
发明人： Vijay Immanuel Raman , Sophia Ebert , Mario Brands , Yongqing Lan , Philipp Zacharias , Ilshat Gubaydullin , Yuzhuo Li
IPC分类号： C03C15/00 , C09G1/02 , C09K3/14 , H01L21/321
摘要： A process for removing a bulk material layer from a substrate and planarizing the exposed surface by CMP by (1) providing an CMP agent exhibiting at the end of the chemical mechanical polishing, without the addition of supplementary materials, the same SER as at its start and a lower MRR than at its start, —an SER which is lower than the initial SER and an MRR which is the same or essentially the same as the initial MRR or a lower SER and a lower MRR than at its start; (2) contacting the surface of the bulk material layer with the CMP agent; (3) the CMP of the bulk material layer with the CMP agent; and (4) continuing the CMP until all material residuals are removed from the exposed surface; and a CMP agent and their use for manufacturing electrical and optical devices.

45. 发明授权

US09487674B2 Chemical mechanical polishing (CMP) composition comprising a glycoside 有权
标题翻译：包含糖苷的化学机械抛光（CMP）组合物
公开(公告)号：US09487674B2
公开(公告)日：2016-11-08
申请号：US14239806
申请日：2012-09-04
申请人： Yuzhuo Li , Ning Gao , Michael Lauter , Roland Lange
发明人： Yuzhuo Li , Michael Lauter , Roland Lange
IPC分类号： H01L21/302 , H01L21/461 , C09G1/02 , C09K13/00 , C23F1/00 , C09G1/00 , H01L21/3105 , H01L21/306
CPC分类号： C09G1/02 , C09G1/00 , C09K13/00 , C23F1/00 , H01L21/30625 , H01L21/31053
摘要： A chemical mechanical polishing (CMP) composition comprising (A) inorganic particles, organic particles, or a mixture or composite thereof, (B) a glycoside of the formulae 1 to 6 wherein R1 is alkyl, aryl, or alkylaryl, R2 is H, X1, X2, X3, X4, X5, X6, alkyl, aryl, or alkylaryl, R3 is H, X1, X2, X3, X4, X5, X6, alkyl, aryl, or alkylaryl, R4 is H, X1, X2, X3, X4, X5, X6, alkyl, aryl, or alkylaryl, R5 is H, X1, X2, X3, X4, X5, X6, alkyl, aryl, or alkylaryl, and the total number of monosaccharide units (X1, X2, X3, X4, X5, or X6) in the glycoside is in the range of from 1 to 20, and (C) an aqueous medium.
摘要翻译：一种化学机械抛光（CMP）组合物，其包含（A）无机颗粒，有机颗粒或其混合物或复合物，（B）式1至6的糖苷，其中R 1是烷基，芳基或烷芳基，R 2是H， X1，X2，X3，X4，X5，X6，烷基，芳基或烷基芳基，R3是H，X1，X2，X3，X4，X5，X6，烷基，芳基或烷基芳基，R4是H，X1，X2， X3，X4，X5，X6，烷基，芳基或烷基芳基，R5是H，X1，X2，X3，X4，X5，X6，烷基，芳基或烷基芳基，单糖单元（X1，X2， X3，X4，X5或X6）的范围为1〜20，（C）水性介质。

46. 发明授权

US09309448B2 Abrasive articles, method for their preparation and method of their use 有权
标题翻译：磨料制品及其制备方法及其使用方法
公开(公告)号：US09309448B2
公开(公告)日：2016-04-12
申请号：US13580807
申请日：2011-01-19
申请人： Christof Kujat , Yuzhuo Li , Kenneth Rushing
发明人： Christof Kujat , Yuzhuo Li , Kenneth Rushing
IPC分类号： B24D3/00 , B24D11/00 , B24D18/00 , C09K3/14 , B24B37/24 , H01L21/321
CPC分类号： C09K3/1436 , B24B37/245 , B24D11/001 , H01L21/3212
摘要： Abrasive articles containing solid abrasive particles (A) selected from the group consisting of inorganic particles, organic particles and inorganic-organic hybrid particles (a1) having an average primary particle size of from 1 to 500 nm as determined by laser light diffraction and having electron donor groups (a2) chemically bonded to their surface are provided. The said solid abrasive particles (A) are distributed throughout or on top of or throughout and on top of a solid matrix (B). A method for manufacturing abrasive articles and a method for processing substrates useful for fabricating electrical and optical devices are provided. The said methods make use of the said abrasive articles.
摘要翻译：含有选自无机颗粒，有机颗粒和无机 - 有机杂化颗粒（a1）的固体磨料颗粒（a1）的磨料制品，其通过激光衍射测定具有1至500nm的平均一次粒径，并具有电子提供化学键合到其表面的供体组（a2）。所述固体磨料颗粒（A）分布在固体基质（B）的整个上方或整个或整个固体基体（B）的顶部。提供了制造磨料制品的方法和用于处理可用于制造电气和光学装置的衬底的方法。所述方法利用所述磨料制品。

47. 发明授权

US09263296B2 Chemical mechanical polishing (CMP) composition comprising two types of corrosion inhibitors 有权
标题翻译：包含两种类型的腐蚀抑制剂的化学机械抛光（CMP）组合物
公开(公告)号：US09263296B2
公开(公告)日：2016-02-16
申请号：US14006744
申请日：2012-03-19
申请人： Bastian Noller , Michael Lauter , Albert Budiman Sugiharto , Yuzhuo Li , Kenneth Rushing , Diana Franz , Roland Böhn
发明人： Bastian Noller , Michael Lauter , Albert Budiman Sugiharto , Yuzhuo Li , Kenneth Rushing , Diana Franz , Roland Böhn
IPC分类号： H01L21/321 , C09G1/04 , C09G1/02 , H01L21/306 , C09K3/14
CPC分类号： H01L21/3212 , C09G1/02 , C09G1/04 , C09K3/1463 , H01L21/30625
摘要： A chemical-mechanical polishing (“CMP”) composition (P) comprising (A) inorganic particles, organic particles, or a mixture or composite thereof, (B) at least one type of A/-heterocyclic compound as corrosion inhibitor, (C) at least one type of a further corrosion inhibitor selected from the group consisting of: (C1) an acetylene alcohol, and (C2) a salt or an adduct of (C2a) an amine, and (C2b) a carboxylic acid comprising an amide moiety, (D) at least one type of an oxidizing agent, (E) at least one type of a complexing agent, and (F) an aqueous medium.
摘要翻译：包含（A）无机颗粒，有机颗粒或其混合物或复合物的化学机械抛光（“CMP”）组合物（P），（B）至少一种作为防腐剂的A / ）至少一种类型的另外的腐蚀抑制剂，其选自：（C1）炔属醇和（C2）（C2a）胺的盐或加合物，和（C2b）包含酰胺的羧酸部分，（D）至少一种类型的氧化剂，（E）至少一种类型的络合剂，和（F）水性介质。

48. 发明授权

US09028708B2 Process for removing a bulk material layer from a substrate and a chemical mechanical polishing agent suitable for this process 有权
标题翻译：从底物中除去大量材料层的方法和适用于该方法的化学机械抛光剂
公开(公告)号：US09028708B2
公开(公告)日：2015-05-12
申请号：US13510514
申请日：2010-11-25
申请人： Vijay Immanuel Raman , Yuzhuo Li , Mario Brands , Yongqing Lan , Kenneth Rushing , Karpagavalli Ramji
发明人： Vijay Immanuel Raman , Yuzhuo Li , Mario Brands , Yongqing Lan , Kenneth Rushing , Karpagavalli Ramji
IPC分类号： C09K13/00 , H01L21/321 , C09G1/02 , C09K3/14
CPC分类号： H01L21/3212 , C09G1/02 , C09K3/1436 , C09K3/1463
摘要： An aqueous chemical mechanical polishing (CMP) agent (A) comprising solid particles (a1) containing (a11) a corrosion inhibitor for metals, and (a12) a solid material, the said solid particles (a1) being finely dispersed in the aqueous phase; and its use in a process for removing a bulk material layer from the surface of a substrate and planarizing the exposed surface by chemical mechanical polishing until all material residuals are removed from the exposed surface, wherein the CMP agent exhibits at the end of the chemical mechanical polishing, without the addition of supplementary materials, —the same or essentially the same static etch rate (SER) as at its start and a lower material removal rate (MRR) than at its start, —a lower SER than at its start and the same or essentially the same MRR as at its start or—a lower SER and a lower MRR than at its start; such that the CMP agent exhibits a soft landing behavior.
摘要翻译：一种包含固体颗粒（a1）的水性化学机械抛光（CMP）剂（A），其包含（a11）金属缓蚀剂和（a12）固体材料，所述固体颗粒（a1）细分散在水相中 ; 并且其用于从基材表面除去大体材料层并通过化学机械抛光使暴露表面平坦化的工艺，直到所有材料残余物从暴露表面除去，其中CMP试剂在化学机械抛光，而不添加补充材料， - 与其开始时相同或基本相同的静态蚀刻速率（SER）和比起始时更低的材料去除速率（MRR），比起始时低SER，与其开始时相同或基本相同的MRR或比起始时更低的SER和较低的MRR; 使得CMP试剂表现出软着色行为。

49. 发明授权

US08927429B2 Chemical mechanical polishing (CMP) composition comprising a specific heteropolyacid 有权
标题翻译：包含特定杂多酸的化学机械抛光（CMP）组合物
公开(公告)号：US08927429B2
公开(公告)日：2015-01-06
申请号：US13877759
申请日：2011-10-04
申请人： Christine Schmitt , Andrey Karpov , Frank Rosowski , Mario Brands , Yuzhuo Li
发明人： Christine Schmitt , Andrey Karpov , Frank Rosowski , Mario Brands , Yuzhuo Li
IPC分类号： H01L21/306 , H01L21/321 , C09G1/02
CPC分类号： H01L21/30625 , C09G1/02 , H01L21/3212
摘要： A chemical mechanical polishing (CMP) composition comprising a specific heteropolyacid Abstract A chemical-mechanical polishing (CMP) composition comprising: (A) inorganic particles, organic particles, or a mixture thereof, (B) a heteropolyacid of the formula HaXbPsMOyVzOc wherein X=any cation other than H 8 0 and a>0 (formula I) or a salt thereof, and, (C) an aqueous medium.
摘要翻译：包含特定杂多酸的化学机械抛光（CMP）组合物摘要A化学机械抛光（CMP）组合物，其包含：（A）无机颗粒，有机颗粒或其混合物，（B）式HaXbPsMOyVzOc的杂多酸，其中X = 除了H 8 0和a> 0（式I）或其盐以外的任何阳离子，和（C）水性介质。

50. 发明授权

US08679980B2 Aqueous metal polishing agent comprising a polymeric abrasiv containing pendant functional groups and its use in a CMP process 有权
标题翻译：水性金属抛光剂，其包含含聚酰亚胺的侧基官能团及其在CMP工艺中的用途
公开(公告)号：US08679980B2
公开(公告)日：2014-03-25
申请号：US13318911
申请日：2010-04-19
申请人： Vijay Immanuel Raman , Ilshat Gubaydullin , Yuzhuo Li , Mario Brands , Yongqing Lan
发明人： Vijay Immanuel Raman , Ilshat Gubaydullin , Yuzhuo Li , Mario Brands , Yongqing Lan
IPC分类号： H01L21/302
CPC分类号： C09G1/02 , C09K3/1409 , C09K3/1463 , H01L21/3212
摘要： (A) solid polymer particles being finely dispersed in the aqueous phase and containing pendant functional groups (a1) capable of strongly interacting and forming strong complexes with the metal of the surfaces to be polished, and pendant functional groups (a2) capable of interacting less strongly with the metal of the surfaces to be polished than the functional groups (a1); and (B) an organic non-polymeric compound dissolved in the aqueous phase and capable of interacting and forming strong, water-soluble complexes with the metal of the surfaces to be polished and causing an increase of the material removal rate MRR and the static etch rate SER of the metal surfaces to be polished with increasing concentration of the compound (B); a CMP process comprising selecting (A) and (B) and the use of the CMP agent and process for polishing wafers with ICs.
摘要翻译：（A）固体聚合物颗粒细分散在水相中并含有能够与待抛光表面的金属强烈相互作用并形成强复合物的侧基官能团（a1），以及能够相互作用较少的侧链官能团（a2）与待处理表面的金属强度相比，官能团（a1）; 和（B）溶解在水相中的有机非聚合化合物，并且能够与要抛光的表面的金属相互作用并形成强的水溶性络合物，并引起材料去除速率MRR和静态蚀刻的增加随着化合物（B）浓度的增加而要抛光的金属表面的速率SER; CMP工艺，包括选择（A）和（B）以及使用CMP剂和用IC抛光晶片的工艺。

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