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    • 42. 发明授权
    • Computing and applying order statistics for data preparation
    • 计算和应用订单统计数据进行准备
    • US08868573B2
    • 2014-10-21
    • US13444718
    • 2012-04-11
    • Yea J. ChuSier HanFan LiJing-Yun ShyrDamir SpisicGraham J. WillsJing Xu
    • Yea J. ChuSier HanFan LiJing-Yun ShyrDamir SpisicGraham J. WillsJing Xu
    • G06F7/00
    • G06F17/30283G06F17/3007G06Q10/10G06Q30/06
    • Provided are techniques for generating order statistics and error bounds. For each of multiple, distributed data sources, a finite number of data bins are created for each field in that data source. Data values in each of the multiple, distributed data sources are processed to generate basic summaries for each of the data bins in a single pass of the data values. The data bins from each of the multiple, distributed data sources are sorted. One or more approximate order statistics are computed for a data set by accumulating counts from a number of the sorted data bins. Lower and upper error bounds are provided for each of the computed one or more approximate order statistics, wherein the lower and upper error bounds are values delimiting an interval containing a true value of an order statistic.
    • 提供了用于生成订单统计和错误界限的技术。 对于多个分布式数据源中的每一个,为数据源中的每个字段创建有限数量的数据仓。 处理多个分布式数据源中的每一个中的数据值,以便在单次数据值中为每个数据仓生成基本摘要。 来自多个分布式数据源中的每一个的数据仓被排序。 通过从多个排序的数据仓中累积计数,为数据集计算一个或多个近似顺序统计量。 为所计算的一个或多个近似秩统计中的每一个提供下限和上限误差界限,其中下限误差界限和上限误差界限是定义包含订单统计量的真实值的间隔的值。
    • 45. 发明授权
    • Semiconductor device and manufacturing method therefor
    • 半导体装置及其制造方法
    • US08476163B2
    • 2013-07-02
    • US13291096
    • 2011-11-08
    • Fan LiHaiyang Zhang
    • Fan LiHaiyang Zhang
    • H01L21/44H01L29/40
    • H01L23/481H01L21/76898H01L2924/0002H01L2924/00
    • A method for manufacturing a semiconductor device includes providing a substrate having a first surface and a second surface, the second surface is on the opposite side of the substrate facing away from the first surface. The method further includes forming a first portion of an opening by etching a portion of the substrate from the first surface, forming a buffer layer on an inner surface of the first portion, etching a bottom of the buffer layer to expose an area of the underlying substrate, and etching the exposed area of the substrate to form a second portion of the opening. The method also includes performing an isotropic etching on the second portion of the opening to obtain a flask-shaped opening and filling the opening with a filling material. The method also includes partially removing a portion of the second surface and the filling material from the second portion of the opening.
    • 一种制造半导体器件的方法包括提供具有第一表面和第二表面的衬底,所述第二表面位于所述衬底的背离所述第一表面的相对侧上。 该方法还包括通过从第一表面蚀刻衬底的一部分来形成开口的第一部分,在第一部分的内表面上形成缓冲层,蚀刻缓冲层的底部以暴露下面的区域 衬底,并且蚀刻衬底的暴露区域以形成开口的第二部分。 该方法还包括在开口的第二部分上执行各向同性蚀刻,以获得烧瓶形开口并用填充材料填充开口。 该方法还包括从开口的第二部分部分地移除第二表面和填充材料的一部分。