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41. 发明申请

US20070146928A1 Ultra thin seed layer for CPP or TMR structure 有权
标题翻译：用于CPP或TMR结构的超薄种子层
公开(公告)号：US20070146928A1
公开(公告)日：2007-06-28
申请号：US11317598
申请日：2005-12-23
申请人： Kunliang Zhang , Hui-Chuan Wang , Tong Zhao , Yu-Hsia Chen , Min Li , Cherng-Chyi Han
发明人： Kunliang Zhang , Hui-Chuan Wang , Tong Zhao , Yu-Hsia Chen , Min Li , Cherng-Chyi Han
IPC分类号： G11B5/127
CPC分类号： G11B5/3906 , B82Y25/00 , G01R33/093 , Y10T29/49021
摘要： Improved magnetic devices have been fabricated by replacing the conventional seed layer (typically Ta) with a bilayer of Ru on Ta. Although both Ru and Ta layers are ultra thin (between 5 and 20 Angstroms), good exchange bias between the seed and the AFM layer (IrMn about 70 Angstroms thick) is retained. This arrangement facilitates minimum shield-to-shield spacing and gives excellent performance in CPP, CCP-CPP, or TMR configurations.
摘要翻译：已经通过用Ta上的Ru的双层代替常规种子层（通常为Ta）来制造改进的磁性器件。虽然Ru和Ta层都是超薄的（5到20埃之间），但保留种子和AFM层之间良好的交换偏差（约为70埃的IrMn）。这种安排有助于最小的屏蔽间隔，并在CPP，CCP-CPP或TMR配置中提供出色的性能。

42. 发明授权

US06230390B1 Canted longitudinal patterned exchange biased dual-stripe magnetoresistive (DSMR) sensor element and method for fabrication thereof 失效
标题翻译：垂直图案交换偏置双条磁阻（DSMR）传感器元件及其制造方法
公开(公告)号：US06230390B1
公开(公告)日：2001-05-15
申请号：US09182761
申请日：1998-10-30
申请人： Yimin Guo , Kochan Ju , Po-Kang Wang , Cherng-Chyi Han , Hui-Chuan Wang
发明人： Yimin Guo , Kochan Ju , Po-Kang Wang , Cherng-Chyi Han , Hui-Chuan Wang
IPC分类号： G11B5127
CPC分类号： G11B5/3954 , G11B5/3932 , H04R15/00 , Y10T29/49034 , Y10T29/49044 , Y10T29/49046
摘要： A dual stripe magnetoresistive (DSMR) sensor element, and a method for fabricating the dual stripe magnetoresistive (DSMR) sensor element. When fabricating the dual stripe magnetoresistive (DSMR) sensor element while employing the method, there are employed two pair of patterned magnetic biasing layers formed of a single magnetic biasing material. The two pair of patterned magnetic biasing layers bias a pair of patterned magnetoresistive (MR) layers in a pair of opposite canted directions. The method employs multiple thermal annealing methods one of which employs a thermal annealing temperature, a thermal annealing exposure time and an extrinsic magnetic bias field such that a first pair of transversely magnetically biased patterned magnetic biasing layers is not substantially demagnetized when forming a second pair of transversely magnetically biased patterned magnetic biasing layers of anti-parallel transverse magnetic bias direction to the first pair of transversely magnetically biased patterned magnetic biasing layers.
摘要翻译：双条带磁阻（DSMR）传感器元件，以及制造双条磁阻（DSMR）传感元件的方法。当采用该方法制造双重磁阻（DSMR）传感器元件时，使用由单个磁偏置材料形成的两对图案化的磁偏置层。两对图案化的磁偏置层在一对相反的倾斜方向上偏置一对图案化磁阻（MR）层。该方法采用多种热退火方法，其中之一采用热退火温度，热退火暴露时间和非本征磁偏置场，使得当形成第二对的第一对的第一对横向磁偏压图案化的偏磁层基本上消磁时，向第一对横向磁偏置图案化磁偏置层的横向磁偏置图案化的反平行横向偏磁方向的偏置偏压层。

43. 发明授权

US08728333B2 Method to fabricate small dimension devices for magnetic recording applications 有权
标题翻译：制造用于磁记录应用的小尺寸装置的方法
公开(公告)号：US08728333B2
公开(公告)日：2014-05-20
申请号：US12658662
申请日：2010-02-12
申请人： Hui-Chuan Wang , Tong Zhao , Min Zheng , Minghui Yu , Min Li , Cherng Chyi Han
发明人： Hui-Chuan Wang , Tong Zhao , Min Zheng , Minghui Yu , Min Li , Cherng Chyi Han
IPC分类号： B44C1/22 , B82Y25/00 , G11B5/31 , G01R33/09 , H01F41/30
CPC分类号： B82Y25/00 , B82Y40/00 , G01R33/098 , G11B5/3163 , G11B5/398 , H01F10/3254 , H01F10/3259 , H01F41/308 , H01L43/12 , Y10T29/49021
摘要： A three step ion beam etch (IBE) sequence involving low energy (
摘要翻译：公开了涉及低能量（<300eV）的三步离子束蚀刻（IBE）序列，用于将传感器临界尺寸（自由层宽度= FLW）修整到小于50nm。第一个IBE步骤相对于传感器侧壁具有陡峭的入射角，占FLW降低的60％至90％。第二IBE步骤具有浅入射角和扫动运动，以从第一IBE步骤去除残留物并进一步修整侧壁。第三IBE步骤具有陡峭的入射角度，以从第二步骤去除损坏的侧壁部分，占FLW减少量的10％至40％。结果，FLW接近30nm，同时保持60％以上的高MR比和1.2ohm-μm2的低RA。通过改变一个或多个离子束入射角来操纵侧壁角。

44. 发明授权

US6024886A Planarizing method for fabricating an inductive magnetic write head for high density magnetic recording 失效
标题翻译：用于制造用于高密度磁记录的感应磁写头的平面化方法
公开(公告)号：US6024886A
公开(公告)日：2000-02-15
申请号：US985648
申请日：1997-12-05
申请人： Cherng-Chyi Han , Yongchang Feng , Rodney E. Lee , Hui-Chuan Wang
发明人： Cherng-Chyi Han , Yongchang Feng , Rodney E. Lee , Hui-Chuan Wang
IPC分类号： G11B5/31 , G11B5/39 , B44C1/22
CPC分类号： G11B5/3967 , G11B5/3116 , G11B5/313 , G11B5/3163 , Y10T29/49032 , Y10T29/49048 , Y10T29/49052
摘要： Within a method for forming a magnetic transducer head there is first provided a substrate having formed thereover a lower magnetic pole layer in turn having formed thereupon a gap filling layer which is substantially planar. There is then formed upon the gap filling layer a patterned upper magnetic pole tip layer which serves as an etch mask layer for forming from the gap filling layer and the lower magnetic pole layer a patterned gap filling layer and an etched lower magnetic pole layer having a lower magnetic pole tip integral thereto, while simultaneously forming an etched patterned upper magnetic pole tip layer from the patterned upper magnetic pole tip layer. There is then formed upon the etched patterned upper magnetic pole tip layer and the etched lower magnetic pole layer a backfilling insulator layer to a thickness greater than a thickness of the etched patterned upper magnetic pole tip layer plus a thickness of the patterned gap filling layer plus a thickness of the lower magnetic pole tip. There is then planarized the backfilling insulator layer to form a patterned planarized backfilling insulator layer an exposed upper surface of which is coplanar with an exposed upper surface of the etched patterned upper magnetic pole tip layer. Finally, there is then formed a patterned upper magnetic pole layer contacting the exposed upper surface of the etched patterned upper magnetic pole tip layer.
摘要翻译：在用于形成磁换能器头的方法中，首先提供了一个在其上形成有下磁极层的衬底，其上形成有大致平坦的间隙填充层。然后在间隙填充层上形成图案化的上磁极尖端层，其用作用于从间隙填充层形成的蚀刻掩模层，并且下部磁极层形成图案化的间隙填充层和蚀刻的下部磁极层，该下部磁极层具有下部磁极尖端与其成一体，同时从图案化的上磁极尖端层形成蚀刻图案的上磁极尖端层。然后在蚀刻图案化的上磁极尖端层和蚀刻的下磁极层上形成厚度大于蚀刻图案的上磁极尖端层厚度加上图案化间隙填充层的厚度加上的回填绝缘体层下磁极尖端的厚度。然后平面化回填绝缘体层，以形成图案化的平坦化回填绝缘体层，其暴露的上表面与蚀刻图案化的上磁极尖端层的暴露的上表面共面。最后，然后形成图案化的上磁极层，其接触蚀刻图案化的上磁极尖端层的暴露的上表面。

45. 发明授权

US07646568B2 Ultra thin seed layer for CPP or TMR structure 有权
标题翻译：用于CPP或TMR结构的超薄种子层
公开(公告)号：US07646568B2
公开(公告)日：2010-01-12
申请号：US11317598
申请日：2005-12-23
申请人： Kunliang Zhang , Hui-Chuan Wang , Tong Zhao , Yu-Hsia Chen , Min Li , Cherng-Chyi Han
发明人： Kunliang Zhang , Hui-Chuan Wang , Tong Zhao , Yu-Hsia Chen , Min Li , Cherng-Chyi Han
IPC分类号： G11B5/127
CPC分类号： G11B5/3906 , B82Y25/00 , G01R33/093 , Y10T29/49021
摘要： Improved magnetic devices have been fabricated by replacing the conventional seed layer (typically Ta) with a bilayer of Ru on Ta. Although both Ru and Ta layers are ultra thin (between 5 and 20 Angstroms), good exchange bias between the seed and the AFM layer (IrMn about 70 Angstroms thick) is retained. This arrangement facilitates minimum shield-to-shield spacing and gives excellent performance in CPP, CCP-CPP, or TMR configurations.
摘要翻译：已经通过用Ta上的Ru的双层代替常规种子层（通常为Ta）来制造改进的磁性器件。虽然Ru和Ta层都是超薄的（5到20埃之间），但保留种子和AFM层之间良好的交换偏差（约为70埃的IrMn）。这种安排有助于最小的屏蔽间隔，并在CPP，CCP-CPP或TMR配置中提供出色的性能。

46. 发明授权

US06449131B2 Canted longitudinal patterned exchange biased dual-stripe magnetoresistive (DSMR) sensor element and method for fabrication thereof 失效
标题翻译：垂直图案交换偏置双条磁阻（DSMR）传感器元件及其制造方法
公开(公告)号：US06449131B2
公开(公告)日：2002-09-10
申请号：US09818963
申请日：2001-03-28
申请人： Yimin Guo , Kochan Ju , Po-Kang Wang , Cherng-Chyi Han , Hui-Chuan Wang
发明人： Yimin Guo , Kochan Ju , Po-Kang Wang , Cherng-Chyi Han , Hui-Chuan Wang
IPC分类号： G11B539
CPC分类号： G11B5/3954 , G11B5/3932 , H04R15/00 , Y10T29/49034 , Y10T29/49044 , Y10T29/49046
摘要： A dual stripe magnetoresistive (DSMR) sensor element, and a method for fabricating the dual stripe magnetoresistive (DSMR) sensor element. When fabricating the dual stripe magnetoresistive (DSMR) sensor element while employing the method, there are employed two pair of patterned magnetic biasing layers formed of a single magnetic biasing material. The two pair of patterned magnetic biasing layers bias a pair of patterned magnetoresistive (MR) layers in a pair of opposite canted directions. The method employs multiple thermal annealing methods one of which employs a thermal annealing temperature, a thermal annealing exposure time and an extrinsic magnetic bias field such that a first pair of transversely magnetically biased patterned magnetic biasing layers is not substantially demagnetized when forming a second pair of transversely magnetically biased patterned magnetic biasing layers of anti-parallel transverse magnetic bias direction to the first pair of transversely magnetically biased patterned magnetic biasing layers.
摘要翻译：双条带磁阻（DSMR）传感器元件，以及制造双条磁阻（DSMR）传感元件的方法。当采用该方法制造双重磁阻（DSMR）传感器元件时，使用由单个磁偏置材料形成的两对图案化的磁偏置层。两对图案化的磁偏置层在一对相反的倾斜方向上偏置一对图案化磁阻（MR）层。该方法采用多种热退火方法，其中之一采用热退火温度，热退火暴露时间和非本征磁偏置场，使得当形成第二对的第一对成对的第一对横向磁偏压图案化磁偏置层时，基本上不消磁向第一对横向磁偏置图案化磁偏置层的横向磁偏置图案化的反平行横向偏磁方向的偏置偏压层。

47. 发明授权

US09040178B2 TMR device with novel free layer structure 有权
标题翻译： TMR器件具有新颖的自由层结构
公开(公告)号：US09040178B2
公开(公告)日：2015-05-26
申请号：US12284409
申请日：2008-09-22
申请人： Tong Zhao , Hui-Chuan Wang , Yu-Chen Zhou , Min Li , Kunliang Zhang
发明人： Tong Zhao , Hui-Chuan Wang , Yu-Chen Zhou , Min Li , Kunliang Zhang
IPC分类号： G11B5/39 , B82Y10/00 , B82Y25/00 , G01R33/09
CPC分类号： H01L43/12 , B82Y10/00 , B82Y25/00 , G01R33/098 , G11B5/3909 , G11B5/3929 , G11B2005/3996 , H01L43/08 , H01L43/10 , Y10T428/1114 , Y10T428/1121 , Y10T428/1143
摘要： A TMR sensor that includes a free layer having at least one B-containing (BC) layer made of CoFeB, CoFeBM, CoB, COBM, or CoBLM, and a plurality of non-B containing (NBC) layers made of CoFe, CoFeM, or CoFeLM is disclosed where L and M are one of Ni, Ta, Ti, W, Zr, Hf, Tb, or Nb. One embodiment is represented by (NBC/BC)n where n≧2. A second embodiment is represented by (NBC/BC)n/NBC where n≧1. In every embodiment, a NBC layer contacts the tunnel barrier and NBC layers each with a thickness from 2 to 8 Angstroms are formed in alternating fashion with one or more BC layers each 10 to 80 Angstroms thick. Total free layer thickness is
摘要翻译：一种TMR传感器，其包括具有由CoFeB，CoFeBM，CoB，COBM或CoBLM制成的至少一个含B（BC）层的自由层和由CoFe，CoFeM制成的多个不含B的（NBC）或CoFeLM，其中L和M是Ni，Ta，Ti，W，Zr，Hf，Tb或Nb之一。一个实施方案由（NBC / BC）n表示，其中n≥2。第二实施例由（NBC / BC）n / NBC表示，其中n≥1。在每个实施例中，NBC层接触隧道势垒，并且各自具有2至8埃厚度的NBC层以与10至80埃厚的BC层交替地形成。总自由层厚度<100埃。这里描述的自由层配置能够在实现高TMR比，低磁致伸缩，低RA和低Hc值的同时实现显着的降噪（SNR增强）。

48. 发明授权

US08747629B2 TMR device with novel free layer 有权
标题翻译： TMR器件具有新颖的自由层
公开(公告)号：US08747629B2
公开(公告)日：2014-06-10
申请号：US12284454
申请日：2008-09-22
申请人： Hui-Chuan Wang , Tong Zhao , Min Li , Kunliang Zhang
发明人： Hui-Chuan Wang , Tong Zhao , Min Li , Kunliang Zhang
IPC分类号： C23C14/00 , C23C14/32 , G11B5/33 , G11B5/127
CPC分类号： G11B5/3909 , B82Y10/00 , B82Y25/00 , G01R33/098 , G11B5/33 , G11B5/3929 , G11B2005/3996 , Y10T428/1114
摘要： A TMR sensor with a free layer having a FL1/FL2/FL3 configuration is disclosed in which FL1 is FeCo or a FeCo alloy with a thickness between 2 and 15 Angstroms. The FL2 layer is made of CoFeB or a CoFeB alloy having a thickness from 2 to 10 Angstroms. The FL3 layer is from 10 to 100 Angstroms thick and has a negative λ to offset the positive λ from FL1 and FL2 layers and is comprised of CoB or a CoBQ alloy where Q is one of Ni, Mn, Tb, W, Hf, Zr, Nb, and Si. Alternatively, the FL3 layer may be a composite such as CoB/CoFe, (CoB/CoFe)n where n is ≧2 or (CoB/CoFe)m/CoB where m is ≧1. The free layer described herein affords a high TMR ratio above 60% while achieving low values for λ (
摘要翻译：公开了具有FL1 / FL2 / FL3结构的自由层的TMR传感器，其中FL1是FeCo或厚度在2和15埃之间的FeCo合金。 FL2层由厚度为2〜10埃的CoFeB或CoFeB合金制成。 FL3层的厚度为10〜100埃，并且具有负λ以从FL1和FL2层偏移正的λ，由CoB或CoBQ合金组成，其中Q是Ni，Mn，Tb，W，Hf，Zr ，Nb和Si。或者，FL3层可以是其中n为≥2的CoB / CoFe（CoB / CoFe）n或（CoB / CoFe）m / CoB（其中m为≥1）的复合物。此处描述的自由层提供高于60％的高TMR比，同时实现λ（<5×10-6），RA（1.5欧姆/μm2）和Hc（<6Oe）的低值。

49. 发明授权

US08653615B2 MR device with synthetic free layer structure 有权
标题翻译：具有合成自由层结构的MR器件
公开(公告)号：US08653615B2
公开(公告)日：2014-02-18
申请号：US12313351
申请日：2008-11-19
申请人： Tong Zhao , Hui-Chuan Wang , Yu-Chen Zhou , Min Li , Kunliang Zhang
发明人： Tong Zhao , Hui-Chuan Wang , Yu-Chen Zhou , Min Li , Kunliang Zhang
IPC分类号： H01L29/82
CPC分类号： H01L43/08 , B82Y25/00 , B82Y40/00 , G01R33/098 , G11B5/3906 , G11C11/16 , G11C11/161 , H01F10/3254 , H01F10/3272 , H01F10/3295 , H01F41/302 , H01L43/12
摘要： A magneto-resistive device having a large output signal as well as a high signal-to-noise ratio is described along with a process for forming it. This improved performance was accomplished by expanding the free layer into a multilayer laminate comprising at least three ferromagnetic layers separated from one another by antiparallel coupling layers. The ferromagnetic layer closest to the transition layer must include CoFeB while the furthermost layer is required to have low Hc as well as a low and negative lambda value. One possibility for the central ferromagnetic layer is NiFe but this is not mandatory.
摘要翻译：描述具有大输出信号以及高信噪比的磁阻装置及其形成方法。通过将自由层扩展成包括通过反平行耦合层彼此分离的至少三个铁磁层的多层层压体来实现这一改进的性能。最接近过渡层的铁磁层必须包括CoFeB，而最外层需要具有低Hc以及低和负的λ值。中心铁磁层的一种可能性是NiFe，但这不是强制性的。

50. 发明授权

US08456781B2 TMR device with novel free layer structure 有权
标题翻译： TMR器件具有新颖的自由层结构
公开(公告)号：US08456781B2
公开(公告)日：2013-06-04
申请号：US13561206
申请日：2012-07-30
申请人： Tong Zhao , Hui-Chuan Wang , Min Li , Kunliang Zhang
发明人： Tong Zhao , Hui-Chuan Wang , Min Li , Kunliang Zhang
IPC分类号： G11B5/39 , C21D1/04
CPC分类号： G11B5/3906 , G01R33/093 , G01R33/098 , G11B5/3163 , G11B2005/3996 , H01F10/3254 , H01F10/3272 , H01F41/303 , H01L43/08 , H01L43/10 , H01L43/12 , Y10T29/49034 , Y10T29/49052
摘要： A composite free layer having a FL1/insertion/FL2 configuration where a top surface of FL1 is treated with a weak plasma etch is disclosed for achieving enhanced dR/R while maintaining low RA, and low λ in TMR or GMR sensors. The weak plasma etch removes less than about 0.2 Angstroms of FL1 and is believed to modify surface structure and possibly increase surface energy. FL1 may be CoFe, CoFe/CoFeB, or alloys thereof having a (+) λ value. FL2 may be CoFe, NiFe, or alloys thereof having a (−) λ value. The thin insertion layer includes at least one magnetic element such as Co, Fe, and Ni, and at least one non-magnetic element. When CoFeBTa is selected as insertion layer, the CoFeB:Ta ratio is from 1:1 to 4:1.
摘要翻译：公开了具有FL1 /插入/ FL2配置的复合自由层，其中FL1的顶表面用弱等离子体蚀刻处理，以实现增强的dR / R，同时保持低RA和TMR或GMR传感器中的低λ。弱等离子体蚀刻去除了小于约0.2埃的FL1，据信可以改变表面结构并可能增加表面能。 FL1可以是具有（+）λ值的CoFe，CoFe / CoFeB或其合金。 FL2可以是具有（ - ）λ值的CoFe，NiFe或其合金。薄插入层包括至少一种诸如Co，Fe和Ni的磁性元件和至少一种非磁性元件。当选择CoFeBTa作为插入层时，CoFeB：Ta的比例为1:1至4:1。

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