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    • 43. 发明授权
    • Magnetoresistance device
    • 磁阻装置
    • US5923504A
    • 1999-07-13
    • US817098
    • 1997-04-18
    • Satoru ArakiYuichi SatoOsamu Shinoura
    • Satoru ArakiYuichi SatoOsamu Shinoura
    • G11B5/39H01F10/32H01L43/08H01L43/10G11B5/127
    • B82Y25/00B82Y10/00G11B5/3903G11B5/3919G11B5/3922G11B5/3925G11B5/399H01F10/3268H01L43/08H01L43/10G11B2005/3996G11B5/39G11B5/3932
    • According to the present invention on a magnetoresistance device having a magnetoresistance effect element, since iron oxide FeO.sub.x exhibiting antiferromagnetism is used as a pinning layer, a spin-valve type magnetoresistance effect element can be obtained which is particularly excellent in corrosion resistance and has a magnetoresistance ratio with an MR slope no less than 0.7% Oe in the region of the high-frequency magnetic field of 1 MHz. Further, the rise-up characteristic of an MR curve at the zero magnetic field is extremely excellent with small hysteresis, and it has high heat resistance. The heat resistance is further improved by interposing an oxygen blocking layer between the pinning layer and a ferromagnetic layer. In the magnetoresistance device, for example, an MR head, using the magnetoresistance effect element having a magnetic multilayer film, an output voltage is approximately five times as high as that of the conventional material. Accordingly, there can be provided an excellent MR head which has extremely high reliability and enables the reading for ultrahigh density magnetic recording exceeding 1 Gbit/inch.sup.2.
    • PCT No.PCT / JP96 / 02702 Sec。 371日期1997年4月18日 102(e)1997年4月18日PCT PCT 1996年9月19日PCT公布。 第WO97 / 11499号公报 日期1997年3月27日根据本发明,对具有磁阻效应元件的磁阻器件,由于使用具有反铁磁性的氧化铁FeOx作为钉扎层,因此可获得特别优异的自旋阀型磁电阻效应元件 并且在1MHz的高频磁场的区域中具有MR斜率不小于0.7%Oe的磁阻比。 此外,在零磁场下,MR曲线的上升特性非常优异,滞后小,耐热性高。 通过在钉扎层和铁磁层之间插入氧阻挡层来进一步提高耐热性。 在磁电阻器件中,例如,使用具有磁性多层膜的磁阻效应元件的MR磁头,输出电压大约是常规材料的5倍。 因此,可以提供极高的可靠性的极好的MR磁头,并能够读取超过1Gbit / inch2的超高密度磁记录。