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    • 42. 发明申请
    • APPARATUS FOR MANUFACTURING SEMICONDUCTOR
    • 制造半导体的装置
    • US20120103260A1
    • 2012-05-03
    • US13347896
    • 2012-01-11
    • Sang Joon PARKYoung Jun Kim
    • Sang Joon PARKYoung Jun Kim
    • C23C16/455
    • H01L21/67757H01L21/67303H01L21/67309H01L21/68771
    • Disclosed is an apparatus for manufacturing semiconductors, to be used for various processes in semiconductor manufacture processing, such as the forming of layers on wafers. A tube has a processing space therein and a discharge hole at a side thereof. A boat can be loaded and unloaded through a lower opening of the tube. Susceptors are vertically separated from one another and supported within the boat, have a central hole defined in the respective centers of rotation thereof, and have a plurality of wafers stacked around a central perimeter on the respective top surfaces thereof. A supply tube is installed at the top of the boat and passes through each central hole of the susceptors, and defines discharge holes for discharging processing gas supplied from the outside onto each top surface of the susceptors.
    • 公开了一种半导体制造装置,用于半导体制造加工中的各种工艺,例如在晶片上形成层。 管内具有处理空间,其一侧具有排出孔。 船可以通过管的下部开口装载和卸载。 感受器彼此垂直分离并支撑在船内,具有限定在其各自旋转中心中的中心孔,并且在其各自的顶表面上具有围绕中心周边堆叠的多个晶片。 供应管安装在船的顶部并穿过基座的每个中心孔,并且限定用于将从外部供应的处理气体排放到基座的每个顶表面上的排放孔。
    • 48. 发明申请
    • Method on Forming an Isolation Film or a Semiconductor Device
    • 形成绝缘膜或半导体器件的方法
    • US20080242046A1
    • 2008-10-02
    • US12112679
    • 2008-04-30
    • Pil Geun SongYoung Jun KimSang Wook Park
    • Pil Geun SongYoung Jun KimSang Wook Park
    • H01L21/762
    • H01L21/76224
    • A method of forming an isolation film in a semiconductor device is disclosed. The disclosed method includes performing a patterning process on a predetermined region of a semiconductor substrate in which a patterned pad film is formed, forming a trench defining an inactive region and an active region, forming a liner film on the entire surface including the trench, forming an insulating film for trench burial only within the trench, stripping the remaining liner film formed except for the inside of the trench and the patterned pad film formed below the liner film, forming a sacrificial film on the entire surface, and performing a polishing process on the entire surface in which the sacrificial film is formed until the semiconductor substrate of the active region is exposed, thereby forming the isolation film having no topology difference with the semiconductor substrate of the active region.
    • 公开了一种在半导体器件中形成隔离膜的方法。 所公开的方法包括在其上形成图案化焊盘膜的半导体衬底的预定区域上执行图案化工艺,形成限定非活性区域和有源区域的沟槽,在包括沟槽的整个表面上形成衬垫膜,形成 用于仅在沟槽内进行沟槽埋置的绝缘膜,剥离除了沟槽内部形成的剩余衬垫膜和形成在衬垫膜下方的图案化衬垫膜,在整个表面上形成牺牲膜,并对 其中形成牺牲膜的整个表面直到有源区的半导体衬底被暴露,从而形成与有源区的半导体衬底没有拓扑结构差异的隔离膜。
    • 49. 发明申请
    • Method of Forming an Isolation Film in a Semiconductor Device
    • 在半导体器件中形成绝缘膜的方法
    • US20080206955A1
    • 2008-08-28
    • US12112725
    • 2008-04-30
    • Pil Geun SongYoung Jun KimSang Wook Park
    • Pil Geun SongYoung Jun KimSang Wook Park
    • H01L21/762H01L21/306
    • H01L21/76224
    • A method of forming an isolation film in a semiconductor device is disclosed. The disclosed method includes performing a patterning process on a predetermined region of a semiconductor substrate in which a patterned pad film is formed, forming a trench defining an inactive region and an active region, forming a liner film on the entire surface including the trench, forming an insulating film for trench burial only within the trench, stripping the remaining liner film formed except for the inside of the trench and the patterned pad film formed below the liner film, forming a sacrificial film on the entire surface, and performing a polishing process on the entire surface in which the sacrificial film is formed until the semiconductor substrate of the active region is exposed, thereby forming the isolation film having no topology difference with the semiconductor substrate of the active region.
    • 公开了一种在半导体器件中形成隔离膜的方法。 所公开的方法包括在其上形成图案化焊盘膜的半导体衬底的预定区域上执行图案化工艺,形成限定非活性区域和有源区域的沟槽,在包括沟槽的整个表面上形成衬垫膜,形成 用于仅在沟槽内进行沟槽埋置的绝缘膜,剥离除了沟槽内部形成的剩余衬垫膜和形成在衬垫膜下方的图案化衬垫膜,在整个表面上形成牺牲膜,并对 其中形成牺牲膜的整个表面直到有源区的半导体衬底被暴露,从而形成与有源区的半导体衬底没有拓扑结构差异的隔离膜。