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41. 发明授权

US06620238B2 Nitride semiconductor structure, method for producing a nitride semiconductor structure, and light emitting device 有权
公开(公告)号：US06620238B2
公开(公告)日：2003-09-16
申请号：US09970431
申请日：2001-10-02
申请人： Yuhzoh Tsuda , Takayuki Yuasa
发明人： Yuhzoh Tsuda , Takayuki Yuasa
IPC分类号： C30B2300
CPC分类号： H01L33/20 , H01L21/02378 , H01L21/0242 , H01L21/0243 , H01L21/02458 , H01L21/0254 , H01L21/0262 , H01L21/02639 , H01L21/02647 , H01L33/007 , H01L33/32 , H01S5/32341
摘要： A nitride semiconductor structure includes: a substrate having a growth surface, a convex portion and a concave portion being formed on the growth surface; and a nitride semiconductor film grown on the growth surface. A cavity is formed between the nitride semiconductor film and the substrate in the concave portion.

42. 发明申请

US20090059984A1 Nitride-based semiconductor light-emitting device 审中-公开
标题翻译：氮化物系半导体发光元件
公开(公告)号：US20090059984A1
公开(公告)日：2009-03-05
申请号：US12230364
申请日：2008-08-28
申请人： Masataka Ohta , Yuhzoh Tsuda , Yukio Yamasaki
发明人： Masataka Ohta , Yuhzoh Tsuda , Yukio Yamasaki
IPC分类号： H01S5/34
CPC分类号： H01S5/34333 , B82Y20/00 , H01S5/3406 , H01S5/3407
摘要： A nitride-based semiconductor light-emitting device includes at least one n-type nitride-based semiconductor layer, an active layer having a quantum well structure, and at least one p-type nitride-based semiconductor layer successively stacked on a substrate, the active layer including an InGaN well layer and a barrier layer containing at least one of GaN and InGaN and having a light-emission wavelength in a range of 430 nm to 580 nm, the well layer having a thickness in a range of 1.2 nm to 4.0 nm, and the barrier layer being more than 10 times and at most 45 times as thick as the well layer.
摘要翻译：氮化物系半导体发光元件具有至少一个n型氮化物系半导体层，具有量子阱结构的有源层和依次层叠在基板上的至少一个p型氮化物系半导体层，活性层包括InGaN阱层和包含GaN和InGaN中的至少一种并且具有在430nm至580nm范围内的发光波长的势垒层，阱层的厚度在1.2nm至4.0的范围内 nm，阻挡层为阱层的10倍以上45倍以下。

43. 发明授权

US08311070B2 Nitride semiconductor laser device 有权
标题翻译：氮化物半导体激光器件
公开(公告)号：US08311070B2
公开(公告)日：2012-11-13
申请号：US13302266
申请日：2011-11-22
申请人： Yuhzoh Tsuda , Masataka Ohta , Yoshie Fujishiro
发明人： Yuhzoh Tsuda , Masataka Ohta , Yoshie Fujishiro
IPC分类号： H01S5/00
CPC分类号： H01S5/34333 , B82Y20/00 , C30B25/165 , C30B29/403 , C30B29/406 , H01S5/2004 , H01S5/3216 , H01S2301/18 , H01S2304/04
摘要： A nitride semiconductor laser device includes an n-type AlGaN clad layer, a GaN layer, a first InGaN light guide layer, a light-emitting layer, a second InGaN light guide layer, a nitride semiconductor inter mediate layer, a p-type AlGaN layer, and a p-type AlGaN clad layer stacked in this order on a nitride semiconductor substrate, wherein the n-type AlGaN clad layer has an Al composition ratio of 3-5% and a thickness of 1.8-2.5 μm; the first and second InGaN light guide layers have an In composition ratio of 3-6%; the first light guide layer has a thickness of 120-160 nm and greater than that of the second light guide layer; and the p-type AlGaN layer is in contact with the p-type clad layer and has an Al composition ratio of 10-35% and greater than that of the p-type clad layer.
摘要翻译：氮化物半导体激光器件包括n型AlGaN包覆层，GaN层，第一InGaN导光层，发光层，第二InGaN导光层，氮化物半导体中间层，p型AlGaN 层和在氮化物半导体衬底上依次层叠的p型AlGaN覆盖层，其中n型AlGaN覆盖层的Al组成比为3-5％，厚度为1.8-2.5μm; 第一和第二InGaN导光层的In组成比为3-6％; 第一导光层的厚度为120-160nm且大于第二导光层的厚度; p型AlGaN层与p型覆盖层接触，Al组成比为p-type覆层的10-35％以上。

44. 发明申请

US20100142577A1 Nitride semiconductor laser device 有权
标题翻译：氮化物半导体激光器件
公开(公告)号：US20100142577A1
公开(公告)日：2010-06-10
申请号：US12591178
申请日：2009-11-12
申请人： Yuhzoh Tsuda , Masataka Ohta , Yoshie Fujishiro
发明人： Yuhzoh Tsuda , Masataka Ohta , Yoshie Fujishiro
IPC分类号： H01S5/34 , C30B25/00
CPC分类号： H01S5/34333 , B82Y20/00 , C30B25/165 , C30B29/403 , C30B29/406 , H01S5/2004 , H01S5/3216 , H01S2301/18 , H01S2304/04
摘要： A nitride semiconductor laser device includes an n-type AlGaN clad layer, a GaN layer, a first InGaN light guide layer, a light-emitting layer, a second InGaN light guide layer, a nitride semiconductor intermediate layer, a p-type AlGaN layer, and a p-type AlGaN clad layer stacked in this order on a nitride semiconductor substrate, wherein the n-type AlGaN clad layer has an Al composition ratio of 3-5% and a thickness of 1.8-2.5 μm; the first and second InGaN light guide layers have an In composition ratio of 3-6%; the first light guide layer has a thickness of 120-160 nm and greater than that of the second light guide layer; and the p-type AlGaN layer is in contact with the p-type clad layer and has an Al composition ratio of 10-35% and greater than that of the p-type clad layer.
摘要翻译：氮化物半导体激光器件包括n型AlGaN包覆层，GaN层，第一InGaN导光层，发光层，第二InGaN导光层，氮化物半导体中间层，p型AlGaN层以及在氮化物半导体衬底上依次层叠的p型AlGaN覆盖层，其特征在于，所述n型AlGaN覆盖层的Al组成比为3-5％，厚度为1.8〜2.5μm; 第一和第二InGaN导光层的In组成比为3-6％; 第一导光层的厚度为120-160nm且大于第二导光层的厚度; p型AlGaN层与p型覆盖层接触，Al组成比为p-type覆层的10-35％以上。

45. 发明授权

US06586316B2 Method for producing a semiconductor substrate 有权
标题翻译：半导体基板的制造方法
公开(公告)号：US06586316B2
公开(公告)日：2003-07-01
申请号：US10087889
申请日：2002-03-01
申请人： Yuhzoh Tsuda , Shingetoshi Ito , Seiki Yano
发明人： Yuhzoh Tsuda , Shingetoshi Ito , Seiki Yano
IPC分类号： H01L2120
CPC分类号： H01L21/02389 , H01L21/0242 , H01L21/02458 , H01L21/0254 , H01L21/0262 , H01L21/02639 , H01L21/02647 , H01L33/007
摘要： A method for producing a semiconductor substrate includes the steps of: forming a first patterned mask containing a material having a growth suppressing effect on a substrate; growing a first nitride semiconductor on a portion of the substrate corresponding to an opening portion of the first patterned mask; forming a second patterned mask containing a material having a growth suppressing effect only on a main surface of the first nitride semiconductor which is positioned above the opening portion of the first patterned mask; and growing a semiconductor crystal substantially from the side surface of the first nitride semiconductor so as to form a second nitride semiconductor which integrally includes the first patterned mask and the second patterned mask.
摘要翻译：一种制造半导体衬底的方法包括以下步骤：在衬底上形成含有具有生长抑制作用的材料的第一图案化掩模; 在对应于第一图案化掩模的开口部分的衬底的一部分上生长第一氮化物半导体; 形成第二图案掩模，其包含仅在位于第一图案化掩模的开口部分上方的第一氮化物半导体的主表面上具有生长抑制作用的材料; 以及从所述第一氮化物半导体的侧表面生长半导体晶体，以形成一体地包括所述第一图案化掩模和所述第二图案化掩模的第二氮化物半导体。

46. 发明授权

US08085826B2 Nitride semiconductor laser device 有权
标题翻译：氮化物半导体激光器件
公开(公告)号：US08085826B2
公开(公告)日：2011-12-27
申请号：US12591178
申请日：2009-11-12
申请人： Yuhzoh Tsuda , Masataka Ohta , Yoshie Fujishiro
发明人： Yuhzoh Tsuda , Masataka Ohta , Yoshie Fujishiro
IPC分类号： H01S5/00
CPC分类号： H01S5/34333 , B82Y20/00 , C30B25/165 , C30B29/403 , C30B29/406 , H01S5/2004 , H01S5/3216 , H01S2301/18 , H01S2304/04
摘要： A nitride semiconductor laser device includes an n-type AlGaN clad layer, a GaN layer, a first InGaN light guide layer, a light-emitting layer, a second InGaN light guide layer, a nitride semiconductor intermediate layer, a p-type AlGaN layer, and a p-type AlGaN clad layer stacked in this order on a nitride semiconductor substrate, wherein the n-type AlGaN clad layer has an Al composition ratio of 3-5% and a thickness of 1.8-2.5 μm; the first and second InGaN light guide layers have an In composition ratio of 3-6%; the first light guide layer has a thickness of 120-160 nm and greater than that of the second light guide layer; and the p-type AlGaN layer is in contact with the p-type clad layer and has an Al composition ratio of 10-35% and greater than that of the p-type clad layer.
摘要翻译：氮化物半导体激光器件包括n型AlGaN包覆层，GaN层，第一InGaN导光层，发光层，第二InGaN导光层，氮化物半导体中间层，p型AlGaN层以及在氮化物半导体衬底上依次层叠的p型AlGaN覆盖层，其特征在于，所述n型AlGaN覆盖层的Al组成比为3-5％，厚度为1.8〜2.5μm; 第一和第二InGaN导光层的In组成比为3-6％; 第一导光层的厚度为120-160nm且大于第二导光层的厚度; p型AlGaN层与p型覆盖层接触，Al组成比为p-type覆层的10-35％以上。

47. 发明授权

US07733935B2 Nitride semiconductor laser device and method of producing the same 有权
标题翻译：氮化物半导体激光器件及其制造方法
公开(公告)号：US07733935B2
公开(公告)日：2010-06-08
申请号：US12289128
申请日：2008-10-21
申请人： Pablo Vaccaro , Yuhzoh Tsuda
发明人： Pablo Vaccaro , Yuhzoh Tsuda
IPC分类号： H01S3/04 , H01S5/00
CPC分类号： H01S5/34333 , B82Y20/00 , H01S5/0202 , H01S5/0213 , H01S5/1057 , H01S5/106 , H01S5/1064 , H01S5/2277 , H01S5/24 , H01S5/3086
摘要： A nitride semiconductor laser device has a semiconductor multi-layer structure that includes a lower clad layer of a first conductive type, an active layer, and an upper clad layer of a second conductive type stacked in this order on a substrate, wherein a layer under the active layer includes a stripe-like trench; the semiconductor multi-layer structure includes a stripe-like optical cavity arranged along the stripe-like trench; the stripe-like trench has a narrower width in its both end regions compared to its central main region; and the active layer is formed of a nitride semiconductor containing In.
摘要翻译：氮化物半导体激光器件具有半导体多层结构，其包括在衬底上依次堆叠的第一导电类型的下覆盖层，有源层和第二导电类型的上覆盖层，其中，有源层包括条状沟槽; 半导体多层结构包括沿着条状沟槽布置的条状光学腔; 与其中心主区域相比，条状沟槽在其两端区域具有较窄的宽度; 并且有源层由含有In的氮化物半导体形成。

48. 发明授权

US07573924B2 Nitride semiconductor laser device 有权
标题翻译：氮化物半导体激光器件
公开(公告)号：US07573924B2
公开(公告)日：2009-08-11
申请号：US11127083
申请日：2005-05-12
申请人： Yuhzoh Tsuda , Daisuke Hanaoka , Masaya Ishida
发明人： Yuhzoh Tsuda , Daisuke Hanaoka , Masaya Ishida
IPC分类号： H01S5/00 , H01S3/04 , H01S3/08
CPC分类号： H01S5/02212 , H01S5/0222 , H01S5/02476 , H01S5/0683 , H01S5/32341
摘要： A nitride semiconductor laser device includes a nitride semiconductor laser element having a resonator end surface and capable of emitting light with a wavelength of at most 420 nm, a heat sink joined to the nitride semiconductor laser element, a stem with the heat sink mounted thereon, and a light detecting element mounted on the stem for detecting a laser beam from the nitride semiconductor laser element. The nitride semiconductor laser element, the heat sink and the light detecting element are enclosed within a cap that is joined to the stem, and an atmosphere within the cap has a dew point of at most −30° C. and an oxygen concentration of at most 100 ppm.
摘要翻译：氮化物半导体激光器件包括具有谐振器端面并能够发射波长最多为420nm的光的氮化物半导体激光元件，连接到氮化物半导体激光元件的散热片，安装有散热片的杆，以及安装在所述杆上的光检测元件，用于检测来自所述氮化物半导体激光元件的激光束。氮化物半导体激光元件，散热器和光检测元件被封闭在与杆接合的盖内，盖内的气氛的露点至多为-30℃，氧浓度为最多100 ppm。

49. 发明申请

US20050265413A1 Nitride semiconductor laser device 有权
标题翻译：氮化物半导体激光器件
公开(公告)号：US20050265413A1
公开(公告)日：2005-12-01
申请号：US11127083
申请日：2005-05-12
申请人： Yuhzoh Tsuda , Daisuke Hanaoka , Masaya Ishida
发明人： Yuhzoh Tsuda , Daisuke Hanaoka , Masaya Ishida
IPC分类号： H01L21/00 , H01S5/02 , H01S5/022 , H01S5/024 , H01S5/0683 , H01S5/323
CPC分类号： H01S5/02212 , H01S5/0222 , H01S5/02476 , H01S5/0683 , H01S5/32341
摘要： A nitride semiconductor laser device includes a nitride semiconductor laser element having a resonator end surface and capable of emitting light with a wavelength of at most 420 nm, a heat sink joined to the nitride semiconductor laser element, a stem with the heat sink mounted thereon, and a light detecting element mounted on the stem for detecting a laser beam from the nitride semiconductor laser element. The nitride semiconductor laser element, the heat sink and the light detecting element are enclosed within a cap that is joined to the stem, and an atmosphere within the cap has a dew point of at most −30° C. and an oxygen concentration of at most 100 ppm.
摘要翻译：氮化物半导体激光器件包括具有谐振器端面并能够发射波长最多为420nm的光的氮化物半导体激光元件，连接到氮化物半导体激光元件的散热片，安装有散热片的杆，以及安装在所述杆上的光检测元件，用于检测来自所述氮化物半导体激光元件的激光束。氮化物半导体激光元件，散热器和光检测元件被封闭在与杆接合的盖内，盖内的气氛的露点至多为-30℃，氧浓度为最多100 ppm。

50. 发明申请

US20120063986A1 NITRIDE SEMICONDUCTOR LASER DEVICE 有权
标题翻译：氮化物半导体激光器件
公开(公告)号：US20120063986A1
公开(公告)日：2012-03-15
申请号：US13302266
申请日：2011-11-22
申请人： Yuhzoh Tsuda , Masataka Ohta , Yoshie Fujishiro
发明人： Yuhzoh Tsuda , Masataka Ohta , Yoshie Fujishiro
IPC分类号： C01B21/00
CPC分类号： H01S5/34333 , B82Y20/00 , C30B25/165 , C30B29/403 , C30B29/406 , H01S5/2004 , H01S5/3216 , H01S2301/18 , H01S2304/04
摘要： A nitride semiconductor laser device includes an n-type AlGaN clad layer, a GaN layer, a first InGaN light guide layer, a light-emitting layer, a second InGaN light guide layer, a nitride semiconductor inter mediate layer, a p-type AlGaN layer, and a p-type AlGaN clad layer stacked in this order on a nitride semiconductor substrate, wherein the n-type AlGaN clad layer has an Al composition ratio of 3-5% and a thickness of 1.8-2.5 μm; the first and second InGaN light guide layers have an In composition ratio of 3-6%; the first light guide layer has a thickness of 120-160 nm and greater than that of the second light guide layer; and the p-type AlGaN layer is in contact with the p-type clad layer and has an Al composition ratio of 10-35% and greater than that of the p-type clad layer.
摘要翻译：氮化物半导体激光器件包括n型AlGaN包覆层，GaN层，第一InGaN导光层，发光层，第二InGaN导光层，氮化物半导体中间层，p型AlGaN 层和在氮化物半导体衬底上依次层叠的p型AlGaN覆盖层，其中n型AlGaN覆盖层的Al组成比为3-5％，厚度为1.8-2.5μm; 第一和第二InGaN导光层的In组成比为3-6％; 第一导光层的厚度为120-160nm且大于第二导光层的厚度; p型AlGaN层与p型覆盖层接触，Al组成比为p-type覆层的10-35％以上。

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