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41. 发明申请

US20130307054A1 SEMICONDUCTOR INTEGRATED CIRCUIT 审中-公开
标题翻译：半导体集成电路
公开(公告)号：US20130307054A1
公开(公告)日：2013-11-21
申请号：US13606292
申请日：2012-09-07
申请人： Shinichi YASUDA , Kosuke Tatsumura , Mari Matsumoto , Koichiro Zaitsu , Masato Oda , Atsuhiro Kinoshita , Daisuke Hagishima , Yoshifumi Nishi , Takahiro Kurita , Shinobu Fujita
发明人： Shinichi YASUDA , Kosuke Tatsumura , Mari Matsumoto , Koichiro Zaitsu , Masato Oda , Atsuhiro Kinoshita , Daisuke Hagishima , Yoshifumi Nishi , Takahiro Kurita , Shinobu Fujita
IPC分类号： H01L27/105
CPC分类号： G11C16/10 , H01L21/823456 , H01L21/823462 , H01L27/11526 , H01L27/11573 , H01L29/7881 , H01L29/792
摘要： One embodiment provides a semiconductor integrated circuit, including: a substrate; a plurality of nonvolatile memory portions formed in the substrate, each including a first nonvolatile memory and a second nonvolatile memory; and a plurality of logic transistor portions formed in the substrate, each including at least one of logic transistor, wherein the logic transistors include: a first transistor which is directly connected to drains of the first and second nonvolatile memories at its gate; and a second transistor which is not directly connected to the drains of the first and second nonvolatile memories, and wherein a bottom surface of the gate of each of the logic transistors sandwiching the first and second nonvolatile memories is lower in height from a top surface of the substrate than a bottom surface of the control gate of each of the first and second nonvolatile memories.
摘要翻译：一个实施例提供一种半导体集成电路，包括：基板; 形成在所述基板中的多个非易失性存储部，每个包括第一非易失性存储器和第二非易失性存储器; 以及形成在所述衬底中的多个逻辑晶体管部分，每个逻辑晶体管部分包括逻辑晶体管中的至少一个，其中所述逻辑晶体管包括：第一晶体管，其第一和第二非易失性存储器的栅极直接连接到第一晶体管; 以及第二晶体管，其不直接连接到第一和第二非易失性存储器的漏极，并且其中夹着第一和第二非易失性存储器的每个逻辑晶体管的栅极的底表面的高度与所述基板比所述第一和第二非易失性存储器中的每一个的所述控制栅极的底表面。

42. 发明授权

US08525251B2 Nonvolatile programmable logic switch 失效
标题翻译：非易失性可编程逻辑开关
公开(公告)号：US08525251B2
公开(公告)日：2013-09-03
申请号：US13221292
申请日：2011-08-30
申请人： Daisuke Hagishima , Atsuhiro Kinoshita , Kazuya Matsuzawa , Kazutaka Ikegami , Yoshifumi Nishi
发明人： Daisuke Hagishima , Atsuhiro Kinoshita , Kazuya Matsuzawa , Kazutaka Ikegami , Yoshifumi Nishi
IPC分类号： H01L29/792
CPC分类号： H01L29/7881 , G11C16/0408 , H01L27/1052 , H01L27/11521 , H01L27/11526 , H01L27/11546 , H01L27/11807 , H01L29/66825
摘要： A nonvolatile programmable logic switch according to an embodiment includes: a memory cell transistor including: a first source region and a first drain region of a second conductivity type formed at a distance from each other in a first semiconductor region of a first conductivity type; a first insulating film, a charge storage film, a second insulating film, and a control gate stacked in this order and formed on the first semiconductor region between the first source region and the first drain region; a pass transistor including: a second source region and a second drain region of a second conductivity type formed at a distance from each other in a second semiconductor region of the first conductivity type; a third insulating film, a gate electrode stacked in this order and formed on the second semiconductor region between the second source region and the second drain region, the gate electrode being electrically connected to the first drain region; and an electrode for applying a substrate bias to the first and second semiconductor regions.
摘要翻译：根据实施例的非易失性可编程逻辑开关包括：存储单元晶体管，包括：在第一导电类型的第一半导体区域中彼此间隔开形成的第二导电类型的第一源极区域和第一漏极区域; 第一绝缘膜，电荷存储膜，第二绝缘膜和控制栅极，并且形成在第一源极区域和第一漏极区域之间的第一半导体区域上; 传输晶体管，包括：在第一导电类型的第二半导体区域中彼此成一定距离地形成的第二导电类型的第二源极区域和第二漏极区域; 第三绝缘膜，栅极电极，并且形成在第二源极区域和第二漏极区域之间的第二半导体区域上，栅极电连接到第一漏极区域; 以及用于将衬底偏压施加到第一和第二半导体区域的电极。

43. 发明授权

US07977182B2 Method of manufacturing MISFET with low contact resistance 失效
标题翻译：具有低接触电阻的MISFET的制造方法
公开(公告)号：US07977182B2
公开(公告)日：2011-07-12
申请号：US12323770
申请日：2008-11-26
申请人： Yoshifumi Nishi , Yoshinori Tsuchiya , Takashi Yamauchi , Junji Koga
发明人： Yoshifumi Nishi , Yoshinori Tsuchiya , Takashi Yamauchi , Junji Koga
IPC分类号： H01L21/8238 , H01L29/04 , H01L29/10 , H01L31/036 , H01L21/285
CPC分类号： H01L29/4975 , H01L21/26506 , H01L21/28097 , H01L21/28518 , H01L21/28537 , H01L21/324 , H01L21/823814 , H01L21/823835 , H01L21/823842 , H01L23/485 , H01L29/665 , H01L29/6659 , H01L29/7833 , H01L2924/0002 , H01L2924/00
摘要： Described herein is a method of manufacturing a semiconductor device realizing higher performance by reducing contact resistance of an electrode. In the method, a gate insulating film, a gate electrode are formed on a semiconductor substrate. A first metal is deposited substrate, and a metal semiconductor compound layer is formed on the surface of the semiconductor substrate by making the first metal and the semiconductor substrate react each other by a first heat treatment. Ions having a mass equal to or larger than atomic weight of Si are implanted into the metal semiconductor compound layer. A second metal is deposited on the metal semiconductor compound layer. An interface layer is formed by making the second metal segregated at an interface between the metal semiconductor compound layer and the semiconductor substrate by diffusing the second metal through the metal semiconductor compound layer by a second heat treatment.
摘要翻译：这里描述的是通过降低电极的接触电阻来制造实现更高性能的半导体器件的方法。在该方法中，在半导体衬底上形成栅极绝缘膜，栅电极。第一金属是沉积衬底，并且通过使第一金属和半导体衬底通过第一热处理而彼此反应，在半导体衬底的表面上形成金属半导体化合物层。将具有等于或大于Si原子量的质量的离子注入到金属半导体化合物层中。第二金属沉积在金属半导体化合物层上。通过使第二金属通过第二热处理使金属半导体化合物层扩散而使第二金属在金属半导体化合物层和半导体基板之间的界面分离而形成界面层。

44. 发明申请

US20070177349A1 High efficiency fluid mover 审中-公开
标题翻译：高效流体动力
公开(公告)号：US20070177349A1
公开(公告)日：2007-08-02
申请号：US11603533
申请日：2006-11-22
申请人： Himanshu Pokharna , Eric Baugh , Eric DiStefano , Jason Ku , Rajiv Mongia , Yoshifumi Nishi , Theodore Hill , Charles Hill
发明人： Himanshu Pokharna , Eric Baugh , Eric DiStefano , Jason Ku , Rajiv Mongia , Yoshifumi Nishi , Theodore Hill , Charles Hill
IPC分类号： H05K7/20
CPC分类号： F04D29/703 , F04D17/167 , F04D29/281 , F04D29/681
摘要： A fluid mover includes a rotor to transfer momentum with a fluid when operated at a given volumetric flow rate through the rotor. The rotor includes a plurality of enclosed passages to transfer momentum in or out of the fluid as the fluid passes through the enclosed passages in response to rotation of the rotor. The passages are formed with a cross sectional shape and cross sectional dimensions along their entire length sufficient to establish and maintain laminar flow of the fluid along the entire length of the enclosed passages when the fluid is passing through the rotor at the given volumetric flow rate. The fluid mover also includes a housing having at least one inlet and at least one outlet for the fluid.
摘要翻译：流体驱动器包括转子，以通过转子的给定体积流速操作时用流体传递动量。转子包括多个封闭通道，用于随着流体响应于转子的旋转而流过封闭通道而将动量传入或流出流体。通道沿其整个长度形成横截面形状和横截面尺寸，足以在流体以给定的体积流速通过转子时沿着封闭通道的整个长度建立并保持流体的层流。流体驱动器还包括具有用于流体的至少一个入口和至少一个出口的壳体。

45. 发明申请

US20060152900A1 Systems for improved blower fans 失效
标题翻译：改进鼓风机系统
公开(公告)号：US20060152900A1
公开(公告)日：2006-07-13
申请号：US11030930
申请日：2005-01-07
申请人： Yoshifumi Nishi , Masahiro Kuroda , Sridhar Machiroutu , Himanshu Pokharna , Karen Stafford
发明人： Yoshifumi Nishi , Masahiro Kuroda , Sridhar Machiroutu , Himanshu Pokharna , Karen Stafford
IPC分类号： H05K7/20
CPC分类号： G06F1/203 , F04D29/162 , F04D29/4213 , F04D29/4226
摘要： According to some embodiments, systems for improved blower fans are provided. In some embodiments, systems may include a casing comprising an inlet to accept a fluid and an outlet to evacuate the fluid. The systems may further comprise an impeller disposed within the casing, comprising a hub and one or more impeller blades coupled to the hub. In some embodiments, the inlet of the casing may be shaped to reduce the amount of fluid that evacuates the casing via the inlet due to pressure within the casing.
摘要翻译：根据一些实施例，提供了用于改进的鼓风机的系统。在一些实施例中，系统可以包括壳体，其包括用于接收流体的入口和用于排出流体的出口。所述系统还可以包括设置在壳体内的叶轮，包括轮毂和联接到轮毂的一个或多个叶轮叶片。在一些实施例中，壳体的入口可以成形为减小由于壳体内的压力而通过入口排出壳体的流体的量。

46. 发明授权

US07028645B2 Pilot oil ignition gas engine and method of operating pilot oil ignition gas engine 失效
公开(公告)号：US07028645B2
公开(公告)日：2006-04-18
申请号：US10415046
申请日：2002-08-29
申请人： Satoru Goto , Yoshifumi Nishi
发明人： Satoru Goto , Yoshifumi Nishi
IPC分类号： F02B3/00
CPC分类号： F02M43/00 , F02D19/061 , F02D19/10 , F02D41/0027 , F02D41/042 , Y02T10/36
摘要： The gas engine of the present invention has a pilot oil fuel valve, a pilot oil pump, and first and second pipes connected to a pilot oil main pipe, for each of a plurality of combustion chambers. An operating pilot oil tank and an ignition stimulant-added pilot oil tank are connected via a switching valve to a third pipe, connected to an end of the pilot oil main pipe. Before operating stops, the pilot oil is discharged by opening an exhaust valve, and thereafter, the switching valve is switched and pilot oil which the ignition stimulant has been added to is supplied into the pipe. Consequently, the pilot oil downstream from the main pipe is replaced with the pilot oil which the ignition stimulant has been added to. Therefore, at the time of the next activation, pilot oil which the ignition stimulant has been added to is sprayed from the fuel valve, and, as a result, misfire at the time of activation is reduced, and a highly reliable engine is obtained.

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