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41. 发明授权

US5602594A Buffer control apparatus for compression of video intraframes 失效
标题翻译：用于压缩视频帧内的缓冲器控制装置
公开(公告)号：US5602594A
公开(公告)日：1997-02-11
申请号：US289566
申请日：1994-08-12
申请人： Sung K. Cho , Yong H. Lee , Joon P. Chang , Choon Lee
发明人： Sung K. Cho , Yong H. Lee , Joon P. Chang , Choon Lee
IPC分类号： G06T9/00 , H04N7/26 , H04N7/30 , H04N7/36
CPC分类号： H04N19/87 , H04N19/124 , H04N19/142 , H04N19/176 , H04N19/179 , H04N19/503 , H04N19/60 , H04N19/146 , H04N19/152
摘要： An apparatus for controlling a buffer adapted to transmit motion-involving video compressed by use of an intraframe compression coding technique employing discrete cosine transform and variable length coding to a constant rate channel, wherein a statistical feed-forward-based buffer control apparatus having a simple construction is combined with an existing statistical feed-back-based buffer control apparatus, thereby being capable of stably controlling a buffer even when a scene change occurs, and reducing the capacity of the buffer and the length of a tape needed. The apparatus includes an encoder for encoding input video data to be compressed, and a feed-forward-based division factor selector for receiving an output signal from the encoder, calculating the complexity of each frame based on the received signal, estimating the quantity of data to be generated by units of a predetermined number of discrete cosine transform blocks, and sending a division factor corresponding to the estimated quantity of data to the encoder.
摘要翻译：一种用于控制缓冲器的装置，其适用于通过使用对于恒定速率信道采用离散余弦变换和可变长度编码的帧内压缩编码技术来发送包含视频的视频压缩，其中基于统计前馈的缓冲器控制装置具有简单结构与现有的基于统计反馈的缓冲器控制装置组合，从而即使当场景变化发生时也能够稳定地控制缓冲器，并且减少缓冲器的容量和所需的磁带的长度。该装置包括用于编码要压缩的输入视频数据的编码器和用于从编码器接收输出信号的前馈分频因子选择器，基于接收到的信号计算每帧的复杂度，估计数据量由预定数量的离散余弦变换块的单位产生，并将与估计的数据量相对应的分频因子发送到编码器。

42. 发明授权

US5571343A Austenitic stainless steel having superior press-formability, hot workability and high temperature oxidation resistance, and manufacturing process therefor 失效
标题翻译：具有优异的压制成型性，热加工性和耐高温氧化性的奥氏体不锈钢及其制造方法
公开(公告)号：US5571343A
公开(公告)日：1996-11-05
申请号：US416875
申请日：1995-04-19
申请人： Do Y. Ryoo , Yong H. Lee , Jae S. Park , Hyun C. Kim , Eung J. Kim
发明人： Do Y. Ryoo , Yong H. Lee , Jae S. Park , Hyun C. Kim , Eung J. Kim
IPC分类号： C21D8/00 , C22C38/00 , C22C38/40 , C22C38/42 , C22C38/58
CPC分类号： C22C38/42
摘要： An austenitic stainless steel and a manufacturing process therefor are disclosed, in which, instead of the expensive Ni, there are added Cu as an austenite (.tau.) stabilizing element, and tiny amounts of Ti as a ferrite forming element and B for improvement of high temperature hot workability, so that the optimum Md.sub.30 temperature and the optimum delta-ferrite content can be controlled, thereby improving the formability, the season cracking resistance, the hot workability and the high temperature oxidation resistance, and reducing the surface defects during the hot rolling and saving the manufacturing cost by reducing the content of Ni. The austenitic stainless steel according to the present invention includes in weight %: less than 0.07% of C, less than 1.0% of Si, less than 2.0% of Mn, 16-18% of Cr, 6.0-8.0% of Ni, less than 0.005% of Al, less than 0.05% of P, less than 0.005% of S, less than 0.03% of Ti, less than 0.003% of B, less than 3.0% of Cu, less than 0.3% of Mo, less than 0.1% of Nb, less than 0.045% of N, the balance of Fe, and other indispensable impurities. Thus the present invention improves the press formability, the season cracking resistance, the hot workability, and the high temperature oxidation resistance.
摘要翻译：公开了一种奥氏体不锈钢及其制造方法，其中代替昂贵的Ni，添加了作为奥氏体（tau）稳定化元素的Cu和少量的作为铁素体形成元素的Ti和用于提高高分子量的B 可以控制最佳Md30温度和最佳δ铁素体含量，从而提高成型性，耐季节性，耐热加工性和高温抗氧化性，并降低热轧过程中的表面缺陷，通过减少Ni的含量来节省制造成本。根据本发明的奥氏体不锈钢的重量％：C：小于0.07％，小于1.0％的Si，小于2.0的Mn，16-18％的Cr，6.0-8.0％的Ni，更少的超过0.005％的Al，小于0.05％的P，小于0.005％的S，小于0.03％的Ti，小于0.003％的B，小于3.0的Cu，小于0.3％的Mo，小于 0.1％的Nb，小于0.045％的N，余量的Fe和其它不可缺少的杂质。因此，本发明提高了冲压成型性，耐季节性，耐热加工性和耐高温氧化性。

43. 发明授权

US5546335A Absolute value calculation method and circuit 失效
标题翻译：绝对值计算方法和电路
公开(公告)号：US5546335A
公开(公告)日：1996-08-13
申请号：US357009
申请日：1994-12-16
申请人： Yong H. Lee
发明人： Yong H. Lee
IPC分类号： G06F7/50 , G06F7/38 , G06F7/544 , G06F7/00
CPC分类号： G06F7/544 , G06F2207/4812 , G06F2207/5442
摘要： 8-bit absolute value calculation method and circuit. The circuit has first to eighth subtracters for subtracting a subtrahend from a minuend in the unit of bit, first to fourth signal selectors for selecting differences and borrows from the second, fourth, sixth and eighth subtracters, respectively, according to borrows from the first, third, fifth and seventh subtracters, fifth and sixth signal selectors for selecting differences and borrows from the second and fourth signal selectors, respectively, and differences from the third and seventh subtracters, respectively, according to borrows from the first and third signal selectors, a seventh signal selector for selecting differences and borrows from the sixth signal selector and differences from the fifth subtracter according to borrows from the fifth signal selector, an eighth signal selector for selecting differences from the first subtracter, differences from the first signal selector, differences from the fifth signal selector and differences and borrows from the seventh signal selector according to a higher-order one of the borrows from the seventh signal selector, and a signal calculator for calculating a difference from the eighth signal selector according to a most significant bit thereof to output an absolute value.
摘要翻译： 8位绝对值计算方法和电路。该电路具有第一至第八减法器，用于以比特为单位减去来自微处理器的减数，第一至第四信号选择器分别根据来自第一，第四，第六和第八减法器的借位选择差分和借位，第三，第五和第七减法器，第五和第六信号选择器，分别根据来自第一和第三信号选择器的借位分别从第二和第四信号选择器选择差分和借位，以及与第三和第七减法器的差异，第七信号选择器，用于根据来自第五信号选择器的借位从第六信号选择器和第五减法器中选择差分和借位;第八信号选择器，用于选择与第一减法器的差异，与第一信号选择器的差异，第五信号选择器和第七信号选择器的差异和借位根据来自第七信号选择器的较高阶借位，以及信号计算器，用于根据其最高有效位计算与第八信号选择器的差值，以输出绝对值。

44. 发明授权

US5336626A Method of manufacturing a MESFET with an epitaxial void 失效
标题翻译：制造具有外延空隙的MESFET的方法
公开(公告)号：US5336626A
公开(公告)日：1994-08-09
申请号：US33745
申请日：1993-03-18
申请人： Yong H. Lee
发明人： Yong H. Lee
IPC分类号： H01L21/20 , H01L21/285 , H01L21/338 , H01L29/06 , H01L29/10 , H01L29/812 , H01L21/265
CPC分类号： H01L29/66863 , H01L21/02392 , H01L21/02395 , H01L21/02463 , H01L21/02543 , H01L21/02546 , H01L21/0262 , H01L21/28587 , H01L29/0649 , H01L29/1029 , H01L29/812
摘要： The present invention relates to a MESFET in which source and drain regions with inverse slopes are formed on a semi-insulating semiconductor substarate having the insulating layer by using the growth property according to the crystal direction and a channel is electrically separated from the substrate by forming the channel layer and a self-aligned gate electrode sequentially on the top of the void formed by the inverse slopes of the source and drain regions. Thus, the present invention achieves the suppression of the leakage current and the backgating effect without the formation of a buffer layer, the formation of the gate electrode without misalignment, a short effective gate length and a low gate resistivity, thereby operating at high speed.
摘要翻译：本发明涉及一种MESFET，其中具有相反斜率的源区和漏区通过使用根据晶体方向的生长特性形成在具有绝缘层的半绝缘半导体基底上，并且沟道通过形成沟道层和自对准栅极电极依次位于由源极和漏极区域的相反斜面形成的空隙的顶部上。因此，本发明实现了不形成缓冲层，形成栅电极而不失准，短的有效栅极长度和低栅极电阻率，从而高速运行而实现了泄漏电流和背衬效应的抑制。

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