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41. 发明授权

US08378387B2 Field effect transistor and method of manufacturing the same 有权
标题翻译：场效应晶体管及其制造方法
公开(公告)号：US08378387B2
公开(公告)日：2013-02-19
申请号：US12919467
申请日：2009-01-21
申请人： Kazuki Ota , Yasuhiro Okamoto
发明人： Kazuki Ota , Yasuhiro Okamoto
IPC分类号： H01L29/78
CPC分类号： H01L29/42356 , H01L29/0657 , H01L29/2003 , H01L29/41741 , H01L29/517 , H01L29/518 , H01L29/66462 , H01L29/7781 , H01L29/7785 , H01L29/7788
摘要： A field effect transistor according to the present invention includes A field effect transistor, comprising: a nitride-based semiconductor multilayer structure, at least including, a drift layer formed of n-type or i-type AlxGa1-xN (0≦X≦0.3), a barrier layer formed of i-type AlYGa1-Y (Y>X), an electron supply layer formed of n-type AlYGa1-YN, and a channel layer formed of i-type GaN or InGaN, that are epitaxially grown on a substrate in this order, from the side of the substrate, a suitable buffer layer being interposed between the substrate and the nitride-based semiconductor multilayer structure; a gate electrode formed in a part of a front surface of the channel layer with an insulating film interposed therebetween; an n+type connection region in which n-type impurities are doped with the density of 1×1018 cm−3 or more, in a range from at least a part of a channel layer to a part of the drift layer, adjacent to one side in a planer direction of an area where the gate electrode is formed; a source electrode formed on a front surface of the semiconductor layer in the opposite side of the n+type connection region with respect to the gate electrode; and a drain electrode formed on a back surface of the substrate.
摘要翻译：根据本发明的场效应晶体管包括A场效应晶体管，包括：氮化物基半导体多层结构，至少包括由n型或i型Al x Ga 1-x N形成的漂移层（0＆amp; NlE; X＆nlE; 0.3 ），由i型AlYGa1-Y（Y> X）形成的阻挡层，由n型AlYGa1-YN形成的电子供给层和由i型GaN或InGaN形成的沟道层，其外延生长在从基板的侧面依次形成基板，在基板和氮化物系半导体多层结构之间插入合适的缓冲层; 栅电极，其形成在沟道层的前表面的一部分中，绝缘膜插入其间; 在从沟道层的至少一部分到漂移层的一部分的范围内，以1×10 18 cm -3以上的密度掺杂n型杂质的n +型连接区域，与一个在形成栅电极的区域的平面方向; 源极，其形成在所述半导体层的与所述n +型连接区相对于所述栅极的相反侧的前表面上; 以及形成在所述基板的背面上的漏电极。

42. 发明申请

US20110006345A1 FIELD EFFECT TRANSISTOR AND METHOD OF MANUFACTURING THE SAME 有权
标题翻译：场效应晶体管及其制造方法
公开(公告)号：US20110006345A1
公开(公告)日：2011-01-13
申请号：US12919467
申请日：2009-01-21
申请人： Kazuki Ota , Yasuhiro Okamoto
发明人： Kazuki Ota , Yasuhiro Okamoto
IPC分类号： H01L29/78 , H01L21/336
CPC分类号： H01L29/42356 , H01L29/0657 , H01L29/2003 , H01L29/41741 , H01L29/517 , H01L29/518 , H01L29/66462 , H01L29/7781 , H01L29/7785 , H01L29/7788
摘要： A field effect transistor according to the present invention includes A field effect transistor, comprising: a nitride-based semiconductor multilayer structure, at least including, a drift layer formed of n-type or i-type AlxGa1-xN (0≦X≦0.3), a barrier layer formed of i-type AlYGa1-Y (Y>X), an electron supply layer formed of n-type AlYGa1-YN, and a channel layer formed of i-type GaN or InGaN, that are epitaxially grown on a substrate in this order, from the side of the substrate, a suitable buffer layer being interposed between the substrate and the nitride-based semiconductor multilayer structure; a gate electrode formed in a part of a front surface of the channel layer with an insulating film interposed therebetween; an n+type connection region in which n-type impurities are doped with the density of 1×1018 cm−3 or more, in a range from at least a part of a channel layer to a part of the drift layer, adjacent to one side in a planer direction of an area where the gate electrode is formed; a source electrode formed on a front surface of the semiconductor layer in the opposite side of the n+type connection region with respect to the gate electrode; and a drain electrode formed on a back surface of the substrate.
摘要翻译：根据本发明的场效应晶体管包括A场效应晶体管，包括：氮化物基半导体多层结构，至少包括由n型或i型Al x Ga 1-x N形成的漂移层（0＆amp; NlE; X＆nlE; 0.3 ），由i型AlYGa1-Y（Y> X）形成的阻挡层，由n型AlYGa1-YN形成的电子供给层和由i型GaN或InGaN形成的沟道层，其外延生长在从基板的侧面依次形成基板，在基板和氮化物系半导体多层结构之间插入合适的缓冲层; 栅电极，其形成在沟道层的前表面的一部分中，绝缘膜插入其间; 在从沟道层的至少一部分到漂移层的一部分的范围内，以1×10 18 cm -3以上的密度掺杂n型杂质的n +型连接区域，与一个在形成栅电极的区域的平面方向; 源极，其形成在所述半导体层的与所述n +型连接区相对于所述栅极的相反侧的前表面上; 以及形成在所述基板的背面上的漏电极。

43. 发明申请

US20140203877A1 SEMICONDUCTOR DEVICE 有权
标题翻译：半导体器件
公开(公告)号：US20140203877A1
公开(公告)日：2014-07-24
申请号：US14239810
申请日：2012-08-21
申请人： Kazuki Ota
发明人： Kazuki Ota
IPC分类号： H03F3/16
CPC分类号： H03F3/16 , H01L29/2003 , H01L29/402 , H01L29/7786
摘要： A semiconductor device is provided with: a field-effect transistor that has a source electrode and a drain electrode that are connected to a semiconductor layer, a gate electrode that is provided on the surface of the semiconductor layer between the source electrode and the drain electrode, and a field plate electrode that is provided on the surface of the semiconductor layer in the vicinity of the gate electrode via an insulating layer, wherein the field-effect transistor amplifies high frequency signals received by the gate electrode to be outputted from the drain electrode; and a voltage dividing circuit that divides a potential difference between the drain electrode and a reference potential GND, and applies a bias voltage such that respective parts of the field plate electrode have a mutually equal potential.
摘要翻译：半导体器件具有：具有连接到半导体层的源电极和漏电极的场效应晶体管，设置在源电极和漏极之间的半导体层的表面上的栅电极以及通过绝缘层设置在栅电极附近的半导体层的表面上的场板电极，其中场效应晶体管放大由栅电极接收的高频信号，以从漏极输出 ; 以及分压电路，其分割漏电极和基准电位GND之间的电位差，并施加偏置电压，使得场板电极的各个部分具有相互相等的电位。

44. 发明申请

US20100270559A1 FIELD EFFECT TRANSISTOR AND PROCESS FOR MANUFACTURING SAME 有权
标题翻译：场效应晶体管及其制造方法
公开(公告)号：US20100270559A1
公开(公告)日：2010-10-28
申请号：US12742587
申请日：2008-11-17
申请人： Kazuki Ota
发明人： Kazuki Ota
IPC分类号： H01L29/80 , H01L21/337 , H01L29/205
CPC分类号： H01L29/7787 , H01L29/2003 , H01L29/66462
摘要： A field effect transistor includes: a channel layer 103 containing GaN or InGaN; a first electron-supplying layer 104 disposed over the channel layer 103 and containing InxAlyGa1-x-yN (0≦x
摘要翻译：场效应晶体管包括：包含GaN或InGaN的沟道层103; 第一电子供应层104设置在沟道层103上并且包含In x Al y Ga 1-x-y N（0＆nl E; x <1,0

45. 发明公开

US20230331507A1 MEDIUM PROCESSING APPARATUS AND IMAGE FORMING SYSTEM INCORPORATING SAME 审中-公开
公开(公告)号：US20230331507A1
公开(公告)日：2023-10-19
申请号：US18300766
申请日：2023-04-14
申请人： Kazuki Ota , Yohei Yamazaki , Yuji Miyachi , Yusuke Hirono , Yuta Yanai , Yuji Susaki , Masanobu Kimata
发明人： Kazuki Ota , Yohei Yamazaki , Yuji Miyachi , Yusuke Hirono , Yuta Yanai , Yuji Susaki , Masanobu Kimata
IPC分类号： B65H37/04 , B65H39/10
CPC分类号： B65H37/04 , B65H39/10 , B65H2403/40 , B65H2301/1635 , B65H2301/51611 , B65H2408/1223 , B65H2801/27
摘要： A medium processing apparatus includes a conveyor, a tray, a binder, a mover, and a switcher. The switcher includes a first passage, a second passage, and a movable wall. The movable wall guides a guided portion of the binder to the second passage when the guided portion moving along the first passage from an end side to a center side contacts the movable wall; causes the guided portion to pass when the guided portion moving along the second passage from the end side to the center side contacts the movable wall; guides the guided portion to the first passage when the guided portion moving along the second passage from the center side to the end side contacts the movable wall; and causes the guided portion to pass when the guided portion moving along the first passage from the center side to the end side contacts the movable wall.

46. 发明授权

US08680580B2 Field effect transistor and process for manufacturing same 有权
标题翻译：场效应晶体管及其制造方法相同
公开(公告)号：US08680580B2
公开(公告)日：2014-03-25
申请号：US12742587
申请日：2008-11-17
申请人： Kazuki Ota
发明人： Kazuki Ota
IPC分类号： H01L21/02 , H01L29/66 , H01L29/15 , H01L31/0256
CPC分类号： H01L29/7787 , H01L29/2003 , H01L29/66462
摘要： A field effect transistor includes: a channel layer 103 containing GaN or InGaN; a first electron-supplying layer 104 disposed over the channel layer 103 and containing InxAlyGa1-x-yN (0≦x
摘要翻译：场效应晶体管包括：包含GaN或InGaN的沟道层103; 第一电子供应层104设置在沟道层103上并且包含In x Al y Ga 1-x-y N（0＆nl E; x <1,0

47. 发明授权

US12098049B2 Medium processing apparatus and image forming system incorporating same 有权
公开(公告)号：US12098049B2
公开(公告)日：2024-09-24
申请号：US18300766
申请日：2023-04-14
申请人： Kazuki Ota , Yohei Yamazaki , Yuji Miyachi , Yusuke Hirono , Yuta Yanai , Yuji Susaki , Masanobu Kimata
发明人： Kazuki Ota , Yohei Yamazaki , Yuji Miyachi , Yusuke Hirono , Yuta Yanai , Yuji Susaki , Masanobu Kimata
IPC分类号： B65H37/04 , B65H39/10
CPC分类号： B65H37/04 , B65H39/10 , B65H2301/1635 , B65H2301/51611 , B65H2403/40 , B65H2408/1223 , B65H2801/27
摘要： A medium processing apparatus includes a conveyor, a tray, a binder, a mover, and a switcher. The switcher includes a first passage, a second passage, and a movable wall. The movable wall guides a guided portion of the binder to the second passage when the guided portion moving along the first passage from an end side to a center side contacts the movable wall; causes the guided portion to pass when the guided portion moving along the second passage from the end side to the center side contacts the movable wall; guides the guided portion to the first passage when the guided portion moving along the second passage from the center side to the end side contacts the movable wall; and causes the guided portion to pass when the guided portion moving along the first passage from the center side to the end side contacts the movable wall.

48. 发明授权

US09780738B2 Semiconductor device 有权
公开(公告)号：US09780738B2
公开(公告)日：2017-10-03
申请号：US14239810
申请日：2012-08-21
申请人： Kazuki Ota
发明人： Kazuki Ota
IPC分类号： H03F3/16 , H01L29/40 , H01L29/778 , H01L29/20
CPC分类号： H03F3/16 , H01L29/2003 , H01L29/402 , H01L29/7786
摘要： A semiconductor device is provided with: a field-effect transistor that has a source electrode and a drain electrode that are connected to a semiconductor layer, a gate electrode that is provided on the surface of the semiconductor layer between the source electrode and the drain electrode, and a field plate electrode that is provided on the surface of the semiconductor layer in the vicinity of the gate electrode via an insulating layer, wherein the field-effect transistor amplifies high frequency signals received by the gate electrode to be outputted from the drain electrode; and a voltage dividing circuit that divides a potential difference between the drain electrode and a reference potential GND, and applies a bias voltage such that respective parts of the field plate electrode have a mutually equal potential.

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