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41. 发明授权

US09448492B2 Multilayer mirror, method of producing a multilayer mirror and lithographic apparatus 有权
标题翻译：多层反射镜，多层反射镜和光刻设备的制造方法
公开(公告)号：US09448492B2
公开(公告)日：2016-09-20
申请号：US14126326
申请日：2012-03-26
申请人： Andrei Mikhailovich Yakunin , Denis Alexandrovich Glushkov , Vladimir Nikolaevich Polkovnikov , Nikolay Nikolaevitch Salashchenko , Leonid Aizikovitch Sjmaenok
发明人： Andrei Mikhailovich Yakunin , Denis Alexandrovich Glushkov , Vladimir Nikolaevich Polkovnikov , Nikolay Nikolaevitch Salashchenko , Leonid Aizikovitch Sjmaenok
IPC分类号： G03B27/54 , G03F7/20 , G02B5/08 , G21K1/06 , B82Y10/00
CPC分类号： G03F7/702 , B82Y10/00 , G02B5/0816 , G02B5/0875 , G02B5/0891 , G03F7/70866 , G03F7/70883 , G21K1/062 , G21K2201/061
摘要： A multilayer mirror for use in device lithography is configured to reflect and/or pattern radiation having a wavelength in the range of about 6.4 nm to about 7.2 nm. The multilayer mirror has a plurality of alternating layers of materials. The plurality of alternating layers of materials include first layers of materials and second layers of materials. The second layers have a higher refractive index for the radiation than the first layers. The materials of the first layers and the materials of the second layers are mutually chemically unreactive at an interface therebetween at temperatures less than 300° C. This may allow the mirrors to have a narrow boundary region of intermingled materials from alternating layers between the layers, for example of 0.5 nm or less in width, which may improve sharpness of the boundary region and improve reflectivity.
摘要翻译：用于器件光刻的多层反射镜被配置为反射和/或形成具有在约6.4nm至约7.2nm范围内的波长的辐射。多层反射镜具有多个交替的材料层。多个交替的材料层包括第一层材料和第二层材料。第二层对于辐射具有比第一层更高的折射率。第一层的材料和第二层的材料在低于300℃的温度下在其界面处相互化学反应。这可以允许反射镜具有与层之间的交替层的混合材料的窄边界区域，例如0.5nm以下的宽度，这可以提高边界区域的清晰度并提高反射率。

42. 发明授权

US09261784B2 Lithographic patterning process and resists to use therein 有权
标题翻译：平版印刷图案工艺和抗蚀剂使用
公开(公告)号：US09261784B2
公开(公告)日：2016-02-16
申请号：US14131141
申请日：2012-05-30
申请人： Sander Frederik Wuister , Vladimir Mihailovitch Krivtsun , Andrei Mikhailovich Yakunin
发明人： Sander Frederik Wuister , Vladimir Mihailovitch Krivtsun , Andrei Mikhailovich Yakunin
IPC分类号： G03F7/20 , G03F7/038 , G03F7/004 , C08F30/08 , G03F7/075
CPC分类号： G03F7/0388 , C08F30/08 , G03F7/0043 , G03F7/0758 , G03F7/2002
摘要： A lithographic process includes the use of a silicon-containing polymer or a compound that includes at least one element selected from the group consisting of: Ta, W, Re, Os, Ir, Ni, Cu or Zn in a resist material for an EUV lithographic process. The wavelength of the EUV light used in the process is less than 11 nm, for example 6.5-6.9 nm. The invention further relates to novel silicon-containing polymers.
摘要翻译：光刻工艺包括在EUV抗蚀剂材料中使用含硅聚合物或包含至少一种选自Ta，W，Re，Os，Ir，Ni，Cu或Zn的元素的化合物光刻工艺。在该过程中使用的EUV光的波长小于11nm，例如6.5-6.9nm。本发明还涉及新的含硅聚合物。

43. 发明授权

US09046780B2 Multilayer mirror and lithographic apparatus 有权
标题翻译：多层镜和光刻设备
公开(公告)号：US09046780B2
公开(公告)日：2015-06-02
申请号：US13438337
申请日：2012-04-03
申请人： Andrei Mikhailovich Yakunin
发明人： Andrei Mikhailovich Yakunin
IPC分类号： G02B5/08 , G03F1/24 , C03C17/36 , G21K1/06 , B82Y10/00 , B82Y40/00
CPC分类号： G03F1/24 , B82Y10/00 , B82Y40/00 , C03C17/3642 , C03C17/3663 , G02B5/0891 , G21K1/062 , G21K2201/061
摘要： A multilayer mirror constructed to reflect radiation having a wavelength in the range of 6.4 nm to 7.2 nm. The multilayer mirror has alternating layers, including a first layer and a second layer. The first and second layers are selected from the group consisting of: U, or a compound or nitride thereof, and B4C layers; Th, or a compound or nitride thereof, and B4C layers; La, or a compound or nitride thereof, and B9C layers; La, or a compound or nitride thereof, and B4C layers; U, or a compound or nitride thereof, and B9C layers; Th, or a compound or nitride thereof, and B9C layers; La, or a compound or nitride thereof, and B layers; U, or a compound or nitride thereof, and B layers; C, or a compound or nitride thereof, and B layers; Th, or a compound or nitride thereof, and B layers.
摘要翻译：构造成反射波长在6.4nm至7.2nm范围内的辐射的多层反射镜。多层反射镜具有交替层，包括第一层和第二层。第一层和第二层选自：U或其化合物或氮化物和B4C层; Th或其化合物或氮化物，以及B4C层; La或其化合物或氮化物和B9C层; La或其化合物或氮化物，以及B4C层; U或其化合物或氮化物，以及B9C层; Th或其化合物或氮化物和B9C层; La或其化合物或氮化物，以及B层; U或其化合物或氮化物，和B层; C或其化合物或氮化物，和B层; Th或其化合物或氮化物，以及B层。

44. 发明申请

US20110013166A1 RADIATION SYSTEM AND LITHOGRAPHIC APPARATUS 失效
标题翻译：辐射系统和光刻设备
公开(公告)号：US20110013166A1
公开(公告)日：2011-01-20
申请号：US12832258
申请日：2010-07-08
申请人： Erik Roelof Loopstra , Vladimir Vitalevich Ivanov , Johannes Hubertus Josephina Moors , Gerardus Hubertus Petrus Maria Swinkels , Andrei Mikhailovich Yakunin , Dennis De Graaf , Uwe Bruno Heini Stamm
发明人： Erik Roelof Loopstra , Vladimir Vitalevich Ivanov , Johannes Hubertus Josephina Moors , Gerardus Hubertus Petrus Maria Swinkels , Andrei Mikhailovich Yakunin , Dennis De Graaf , Uwe Bruno Heini Stamm
IPC分类号： G03B27/54 , G21K5/04
CPC分类号： H05G2/003 , G03F7/70033 , H05G2/005 , H05G2/008
摘要： A radiation system includes a target material supply configured to supply droplets of target material along a trajectory, and a laser system that includes an amplifier and optics. The optics are configured to establish a first beam path which passes through the amplifier and through a first location on the trajectory, and to establish a second beam path which passes through the amplifier and through a second location on the trajectory. The laser system is configured to generate a first pulse of laser radiation when photons emitted from the amplifier are reflected along the first beam path by a droplet of target material at the first location on the trajectory. The laser system is configured to generate a second pulse of laser radiation when photons emitted from the amplifier are reflected along the second beam path by the droplet of target material at the second location on the trajectory.
摘要翻译：辐射系统包括被配置为沿着轨迹提供目标材料的液滴的目标材料供应，以及包括放大器和光学器件的激光系统。光学器件被配置成建立穿过放大器并通过轨迹上的第一位置的第一光束路径，并且建立穿过放大器并通过轨迹上的第二位置的第二光束路径。激光系统被配置为当从放大器发射的光子在轨迹上的第一位置处通过目标材料的液滴沿着第一光束路径反射时，产生激光辐射的第一脉冲。激光系统被配置为当从放大器发射的光子在轨道上的第二位置处由靶材料的液滴沿着第二光束路径反射时，产生激光辐射的第二脉冲。

45. 发明授权

US09366967B2 Radiation source 有权
标题翻译：辐射源
公开(公告)号：US09366967B2
公开(公告)日：2016-06-14
申请号：US14241364
申请日：2012-08-01
申请人： Andrei Mikhailovich Yakunin , Vladimir Vitalevich Ivanov , Vladimir Mihailovitch Krivtsun , Viacheslav Medvedev , Gerardus Hubertus Petrus Maria Swinkels , Jan Bernard Plechelmus Van Schoot
发明人： Andrei Mikhailovich Yakunin , Vladimir Vitalevich Ivanov , Vladimir Mihailovitch Krivtsun , Viacheslav Medvedev , Gerardus Hubertus Petrus Maria Swinkels , Jan Bernard Plechelmus Van Schoot
IPC分类号： G03B27/32 , G03B27/54 , G03F7/20 , H05G2/00
CPC分类号： G03F7/70033 , H05G2/005 , H05G2/006 , H05G2/008
摘要： A radiation source (60) suitable for providing a beam of radiation to an illuminator of a lithographic apparatus. The radiation source comprises a nozzle configured to direct a stream of fuel droplets (62) along a trajectory (64) towards a plasma formation location (66). The radiation source is configured to receive a first amount of radiation (68) such that the first amount of radiation is incident on a fuel droplet (62a) at the plasma formation location, and such that the first amount of radiation transfers energy into the fuel droplet to generate a modified fuel distribution (70), the modified fuel distribution having a surface. The radiation source is also configured to receive a second amount of radiation (72) such that the second amount of radiation is incident on a portion of the surface (70a) of the modified fuel distribution, the second amount of radiation having a p-polarized component with respect to the portion of the surface; and such that the second amount of radiation transfers energy to the modified fuel distribution to generate a radiation generating plasma, the radiation generating plasma emitting a third amount of radiation (74). The radiation source further comprises a collector (CO) configured to collect and direct at least a portion of the third amount of radiation. The radiation source is configured such that the second amount of radiation propagates in a first direction, the first direction being non-parallel to a normal to the portion of the surface of the modified fuel distribution.
摘要翻译：适于向光刻设备的照明器提供辐射束的辐射源（60）。辐射源包括被配置为沿着轨迹（64）将燃料液滴（62）流引向等离子体形成位置（66）的喷嘴。辐射源被配置为接收第一量的辐射（68），使得第一量的辐射入射在等离子体形成位置处的燃料液滴（62a）上，并且使得第一量的辐射将能量转移到燃料液滴以产生改进的燃料分配（70），所述改进的燃料分布具有表面。辐射源还被配置为接收第二数量的辐射（72），使得第二量的辐射入射在改性燃料分布的表面（70a）的一部分上，第二量的辐射具有p偏振相对于表面的部分; 并且使得第二量的辐射将能量传递到经修改的燃料分布以产生辐射产生等离子体，该辐射产生等离子体发射第三量的辐射（74）。辐射源还包括收集器（CO），其被配置成收集并引导第三量的辐射的至少一部分。辐射源被配置成使得第二数量的辐射在第一方向上传播，第一方向不平行于改性燃料分布的表面部分的法线。

46. 发明授权

US09007565B2 Spectral purity filter 有权
标题翻译：光谱纯度过滤器
公开(公告)号：US09007565B2
公开(公告)日：2015-04-14
申请号：US13578468
申请日：2010-12-08
申请人： Andrei Mikhailovich Yakunin , Vladimir Mihailovitch Krivtsun , Viacheslav Medvedev , Alexandre Kodentsov
发明人： Andrei Mikhailovich Yakunin , Vladimir Mihailovitch Krivtsun , Viacheslav Medvedev , Alexandre Kodentsov
IPC分类号： G03F7/20 , G02B5/20
CPC分类号： G03F7/70191 , G02B5/201 , G02B5/208 , G03F7/70575 , G03F7/70916 , G03F7/70958
摘要： A spectral purity filter includes a body of material, through which a plurality of apertures extend. The apertures are arranged to suppress radiation having a first wavelength and to allow at least a portion of radiation having a second wavelength to be transmitted through the apertures. The second wavelength of radiation is shorter than the first wavelength of radiation. The body of material is formed from tungsten-molybdenum alloy or a molybdenum-rhenium alloy or a tungsten-rhenium alloy or a tungsten-molybdenum-rhenium alloy.
摘要翻译：光谱纯度滤光器包括一组材料，多个孔通过它们延伸。孔被布置成抑制具有第一波长的辐射并且允许具有第二波长的辐射的至少一部分透射通过孔。辐射的第二波长比辐射的第一波长短。材料体由钨钼合金或钼 - 铼合金或钨 - 铼合金或钨 - 钼 - 铼合金形成。

47. 发明授权

US09329503B2 Multilayer mirror 有权
标题翻译：多层镜
公开(公告)号：US09329503B2
公开(公告)日：2016-05-03
申请号：US13698171
申请日：2011-04-06
申请人： Vadim Iourievich Timoshkov , Jan Bernard Plechelmus van Schoot , Antonius Theodorus Wilhelmus Kempen , Andrei Mikhailovich Yakunin , Edgar Alberto Osorio Oliveros
发明人： Vadim Iourievich Timoshkov , Jan Bernard Plechelmus van Schoot , Antonius Theodorus Wilhelmus Kempen , Andrei Mikhailovich Yakunin , Edgar Alberto Osorio Oliveros
IPC分类号： G03B27/70 , G03F7/20 , B82Y10/00 , C23C14/48 , C23C14/58 , G21K1/06
CPC分类号： G03F7/70958 , B82Y10/00 , C23C14/48 , C23C14/586 , G21K1/062
摘要： There is provided a multilayer mirror (80) comprising a layer of a first material (84) and a layer of silicon (82). The layer of the first material and the layer of silicon form a stack of layers. An exposed region of the layer of silicon comprises a modification that is arranged to improve the robustness of the exposed region of silicon.
摘要翻译：提供了包括第一材料（84）和硅层（82）的层的多层反射镜（80）。第一材料层和硅层形成一叠层。硅层的暴露区域包括被设置为改善暴露的硅区域的鲁棒性的修改。

48. 发明申请

US20140368802A1 RADIATION SOURCE 有权
标题翻译：辐射源
公开(公告)号：US20140368802A1
公开(公告)日：2014-12-18
申请号：US14241364
申请日：2012-08-01
申请人： Andrei Mikhailovich Yakunin , Vladimir Vitalevich Ivanov , Vladimir Mihailovitch Krivtsun , Viacheslav Medvedev , Gerardus, Hubertus, Petrus, Maria Swinkels , Jan, Bernard, Plechelmus Van Schoot
发明人： Andrei Mikhailovich Yakunin , Vladimir Vitalevich Ivanov , Vladimir Mihailovitch Krivtsun , Viacheslav Medvedev , Gerardus, Hubertus, Petrus, Maria Swinkels , Jan, Bernard, Plechelmus Van Schoot
IPC分类号： G03F7/20 , H05G2/00
CPC分类号： G03F7/70033 , H05G2/005 , H05G2/006 , H05G2/008
摘要： A radiation source (60) suitable for providing a beam of radiation to an illuminator of a lithographic apparatus. The radiation source comprises a nozzle configured to direct a stream of fuel droplets (62) along a trajectory (64) towards a plasma formation location (66). The radiation source is configured to receive a first amount of radiation (68) such that the first amount of radiation is incident on a fuel droplet (62a) at the plasma formation location, and such that the first amount of radiation transfers energy into the fuel droplet to generate a modified fuel distribution (70), the modified fuel distribution having a surface. The radiation source is also configured to receive a second amount of radiation (72) such that the second amount of radiation is incident on a portion of the surface (70a) of the modified fuel distribution, the second amount of radiation having a p-polarized component with respect to the portion of the surface; and such that the second amount of radiation transfers energy to the modified fuel distribution to generate a radiation generating plasma, the radiation generating plasma emitting a third amount of radiation (74). The radiation source further comprises a collector (CO) configured to collect and direct at least a portion of the third amount of radiation. The radiation source is configured such that the second amount of radiation propagates in a first direction, the first direction being non-parallel to a normal to the portion of the surface of the modified fuel distribution.
摘要翻译：适于向光刻设备的照明器提供辐射束的辐射源（60）。辐射源包括被配置为沿着轨迹（64）将燃料液滴（62）流引向等离子体形成位置（66）的喷嘴。辐射源被配置为接收第一量的辐射（68），使得第一量的辐射入射在等离子体形成位置处的燃料液滴（62a）上，并且使得第一量的辐射将能量转移到燃料液滴以产生改进的燃料分配（70），所述改进的燃料分布具有表面。辐射源还被配置为接收第二数量的辐射（72），使得第二量的辐射入射在改性燃料分布的表面（70a）的一部分上，第二量的辐射具有p偏振相对于表面的部分; 并且使得第二量的辐射将能量传递到经修改的燃料分布以产生辐射产生等离子体，该辐射产生等离子体发射第三量的辐射（74）。辐射源还包括收集器（CO），其被配置成收集并引导第三量的辐射的至少一部分。辐射源被配置成使得第二数量的辐射在第一方向上传播，第一方向不平行于改性燃料分布的表面部分的法线。

49. 发明申请

US20140212819A1 LITHOGRAPHIC PATTERNING PROCESS AND RESISTS TO USE THEREIN 有权
标题翻译：地图绘制过程及其使用电阻
公开(公告)号：US20140212819A1
公开(公告)日：2014-07-31
申请号：US14131141
申请日：2012-05-30
申请人： Sander Frederik Wuister , Vladimir Mihailovitch Krivtsun , Andrei Mikhailovich Yakunin
发明人： Sander Frederik Wuister , Vladimir Mihailovitch Krivtsun , Andrei Mikhailovich Yakunin
IPC分类号： G03F7/038 , G03F7/004 , G03F7/20
CPC分类号： G03F7/0388 , C08F30/08 , G03F7/0043 , G03F7/0758 , G03F7/2002
摘要： A lithographic process includes the use of a silicon-containing polymer or a compound that includes at least one element selected from the group consisting of: Ta, W, Re, Os, Ir, Ni, Cu or Zn in a resist material for an EUV lithographic process. The wavelength of the EUV light used in the process is less than 11 nm, for example 6.5-6.9 nm. The invention further relates to novel silicon-containing polymers.
摘要翻译：光刻工艺包括在EUV抗蚀剂材料中使用含硅聚合物或包含至少一种选自Ta，W，Re，Os，Ir，Ni，Cu或Zn的元素的化合物光刻工艺。在该过程中使用的EUV光的波长小于11nm，例如6.5-6.9nm。本发明还涉及新的含硅聚合物。

50. 发明申请

US20140198306A1 MULTILAYER MIRROR, METHOD OF PRODUCING A MULTILAYER MIRROR AND LITHOGRAPHIC APPARATUS 有权
标题翻译：多层反射镜，多层反射镜和光刻设备的制造方法
公开(公告)号：US20140198306A1
公开(公告)日：2014-07-17
申请号：US14126326
申请日：2012-03-26
申请人： Andrei Mikhailovich Yakunin , Denis Alexandrovich Glushkov , Vladimir Nikolaevich Polkovnikov , Nikolay Nikolaevitch Salashchenko , Leonid Aizikovitch Sjmaenok
发明人： Andrei Mikhailovich Yakunin , Denis Alexandrovich Glushkov , Vladimir Nikolaevich Polkovnikov , Nikolay Nikolaevitch Salashchenko , Leonid Aizikovitch Sjmaenok
IPC分类号： G03F7/20 , G21K1/06
CPC分类号： G03F7/702 , B82Y10/00 , G02B5/0816 , G02B5/0875 , G02B5/0891 , G03F7/70866 , G03F7/70883 , G21K1/062 , G21K2201/061
摘要： A multilayer mirror for use in device lithography is configured to reflect and/or pattern radiation having a wavelength in the range of about 6.4 nm to about 7.2 nm. The multilayer mirror has a plurality of alternating layers of materials. The plurality of alternating layers of materials include first layers of materials and second layers of materials. The second layers have a higher refractive index for the radiation than the first layers. The materials of the first layers and the materials of the second layers are mutually chemically unreactive at an interface therebetween at temperatures less than 300° C. This may allow the mirrors to have a narrow boundary region of intermingled materials from alternating layers between the layers, for example of 0.5 nm or less in width, which may improve sharpness of the boundary region and improve reflectivity.
摘要翻译：用于器件光刻的多层反射镜被配置为反射和/或形成具有在约6.4nm至约7.2nm范围内的波长的辐射。多层反射镜具有多个交替的材料层。多个交替的材料层包括第一层材料和第二层材料。第二层对于辐射具有比第一层更高的折射率。第一层的材料和第二层的材料在低于300℃的温度下在其界面处相互化学反应。这可以允许反射镜具有与层之间的交替层的混合材料的窄边界区域，例如0.5nm以下的宽度，这可以提高边界区域的清晰度并提高反射率。

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