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42. 发明申请

US20100317169A1 METHODS OF FABRICATING NON-VOLATILE MEMORY DEVICES USING INCLINED ION IMPLANTATION 审中-公开
标题翻译：使用离子植入法制造非易失性记忆体装置的方法
公开(公告)号：US20100317169A1
公开(公告)日：2010-12-16
申请号：US12708030
申请日：2010-02-18
申请人： Suk-kang Sung , Keon-soo Kim , Min-chul Kim , Se-jun Park
发明人： Suk-kang Sung , Keon-soo Kim , Min-chul Kim , Se-jun Park
IPC分类号： H01L21/336
CPC分类号： H01L27/11529 , H01L21/26586 , H01L21/823425 , H01L27/11526 , H01L29/66825
摘要： Provided is a method of manufacturing a non-volatile memory device by performing ion implantation at an angle such that active regions of memory cell transistors in a cell region and peripheral transistors in a peripheral region each have different doping concentrations. The method includes forming a plurality of memory cell transistor gates on a cell region of a substrate surface and a plurality of peripheral transistor gates on a peripheral region of the substrate surface, where a distance between adjacent ones of the peripheral transistor gates is greater than a distance between adjacent ones of the memory cell transistor gates, and performing an ion implantation process at an implantation angle that is selected based on a height of the memory cell transistor gates and the distance between the adjacent ones thereof to implant ions into portions of the peripheral region between the peripheral transistor gates without implanting the ions into portions of the cell region between the memory cell transistor gates.
摘要翻译：提供了通过以使得单元区域中的存储单元晶体管的有源区域和周边区域中的外围晶体管的各自具有不同的掺杂浓度的角度进行离子注入来制造非易失性存储器件的方法。该方法包括在衬底表面的单元区域上形成多个存储单元晶体管栅极和在衬底表面的周边区域上的多个外围晶体管栅极，其中相邻的周边晶体管栅极之间的距离大于并且以基于存储单元晶体管栅极的高度和其相邻距离之间的距离选择的注入角度进行离子注入工艺，以将离子注入到外围部分中外围晶体管栅极之间的区域，而不将离子注入存储单元晶体管栅极之间的单元区域的部分。

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