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41. 发明授权

US07760551B2 Method of programming nonvolatile memory device 有权
标题翻译：非易失性存储器件编程方法
公开(公告)号：US07760551B2
公开(公告)日：2010-07-20
申请号：US12232082
申请日：2008-09-10
申请人： Sang-jin Park , Kwang-soo Seol , Ki-hwan Choi , Jung-hun Sung , Sang-moo Choi
发明人： Sang-jin Park , Kwang-soo Seol , Ki-hwan Choi , Jung-hun Sung , Sang-moo Choi
IPC分类号： G11C16/04
CPC分类号： G11C16/0483 , G11C16/10 , G11C16/3413 , G11C16/3454 , G11C16/3486
摘要： A method of programming a nonvolatile memory device may include applying a program voltage to a memory cell. A supplementary pulse may be applied to the memory cell to facilitate thermalization of charges after the application of the program voltage. A recovery voltage may be applied to the memory cell after the application of the supplementary pulse. A program state of the memory cell may be verified using a verification voltage after the application of the recovery voltage.
摘要翻译：非易失性存储器件的编程方法可以包括将程序电压施加到存储单元。补充脉冲可以施加到存储器单元，以便在施加编程电压之后促进电荷的热化。在施加补充脉冲之后，可以将复原电压施加到存储单元。可以在施加恢复电压之后使用验证电压来验证存储器单元的编程状态。

42. 发明申请

US20090256624A1 Antifuse and methods of operating and manufacturing the same 有权
标题翻译：防腐剂及其操作和制造方法相同
公开(公告)号：US20090256624A1
公开(公告)日：2009-10-15
申请号：US12385391
申请日：2009-04-07
申请人： Deok-kee Kim , Jung-Hun Sung , Sang-moo Choi , Soo-Jung Hwang
发明人： Deok-kee Kim , Jung-Hun Sung , Sang-moo Choi , Soo-Jung Hwang
IPC分类号： H01L29/78 , H01L21/768 , H01H85/00 , H01L23/525
CPC分类号： H01L23/5252 , H01L29/78 , H01L2924/0002 , H01L2924/00
摘要： Provided are an antifuse and methods of operating and manufacturing the same. The antifuse may include first and second conductors separate from each other; a dielectric layer for an antifuse between the first and second conductors; and a diffusion layer between one of the first and second conductors and the dielectric layer.
摘要翻译：提供反熔丝及其操作和制造方法。反熔丝可以包括彼此分离的第一和第二导体; 用于第一和第二导体之间的反熔丝的电介质层; 以及在第一和第二导体之一和介电层之间的扩散层。

43. 发明申请

US20090071934A1 Crystalline aluminum oxide layers having increased energy band gap, charge trap layer devices including crystalline aluminum oxide layers, and methods of manufacturing the same 失效
标题翻译：具有增加的能带隙的结晶氧化铝层，包括结晶氧化铝层的电荷陷阱层器件及其制造方法
公开(公告)号：US20090071934A1
公开(公告)日：2009-03-19
申请号：US12219987
申请日：2008-07-31
申请人： Sang-moo Choi , Jung-hun Sung , Kwang-soo Seol , Woong-chul Shin , Sang-jin Park
发明人： Sang-moo Choi , Jung-hun Sung , Kwang-soo Seol , Woong-chul Shin , Sang-jin Park
IPC分类号： B44C1/22 , B05D3/10 , C23C14/08 , C23C16/00
CPC分类号： H01L21/28273 , H01L21/28282 , H01L29/4234 , H01L29/513 , H01L29/518
摘要： Crystalline aluminum oxide layers having increased energy band gap, charge trap memory devices including crystalline aluminum oxide layers and methods of manufacturing the same are provided. A method of forming an aluminum oxide layer having an increased energy band gap includes forming an amorphous aluminum oxide layer on a lower film, introducing hydrogen (H) or hydroxyl group (OH) into the amorphous aluminum oxide layer, and crystallizing the amorphous aluminum oxide layer including the H or OH.
摘要翻译：提供具有增加的能带隙的结晶氧化铝层，包括结晶氧化铝层的电荷陷阱存储器件及其制造方法。形成具有增加的能带隙的氧化铝层的方法包括在下膜上形成无定形氧化铝层，将氢（H）或羟基（OH）引入到无定形氧化铝层中，并使非晶态氧化铝层包括H或OH。

44. 发明申请

US20090067247A1 Method of programming nonvolatile memory device 有权
标题翻译：非易失性存储器件编程方法
公开(公告)号：US20090067247A1
公开(公告)日：2009-03-12
申请号：US12232082
申请日：2008-09-10
申请人： Sang-jin Park , Kwang-soo Seol , Ki-hwan Choi , Jung-hun Sung , Sang-moo Choi
发明人： Sang-jin Park , Kwang-soo Seol , Ki-hwan Choi , Jung-hun Sung , Sang-moo Choi
IPC分类号： G11C16/04 , G11C16/06
CPC分类号： G11C16/0483 , G11C16/10 , G11C16/3413 , G11C16/3454 , G11C16/3486
摘要： A method of programming a nonvolatile memory device may include applying a program voltage to a memory cell. A supplementary pulse may be applied to the memory cell to facilitate thermalization of charges after the application of the program voltage. A recovery voltage may be applied to the memory cell after the application of the supplementary pulse. A program state of the memory cell may be verified using a verification voltage after the application of the recovery voltage.
摘要翻译：非易失性存储器件的编程方法可以包括将程序电压施加到存储单元。补充脉冲可以施加到存储器单元，以便在施加编程电压之后促进电荷的热化。在施加补充脉冲之后，可以将复原电压施加到存储单元。可以在施加恢复电压之后使用验证电压来验证存储器单元的编程状态。

45. 发明申请

US20090021979A1 Gate stack, capacitorless dynamic random access memory including the gate stack and methods of manufacturing and operating the same 审中-公开
标题翻译：门堆叠，无电容动态随机存取存储器，包括栅极堆栈及其制造和操作方法
公开(公告)号：US20090021979A1
公开(公告)日：2009-01-22
申请号：US12007012
申请日：2008-01-04
申请人： Jung-hun Sung , Kwang-soo Seol , Woong-chul Shin , Sang-jin Park , Sang-moo Choi
发明人： Jung-hun Sung , Kwang-soo Seol , Woong-chul Shin , Sang-jin Park , Sang-moo Choi
IPC分类号： G11C11/40 , H01L27/108 , H01L21/8242
CPC分类号： H01L27/108 , G11C11/404 , H01L29/4234 , H01L29/792
摘要： Provided are a gate stack, a capacitorless dynamic random access memory (DRAM) including the gate stack and methods of manufacturing and operating the same. The gate stack for a capacitorless DRAM may include a tunnel insulating layer on a substrate, a first charge trapping layer on the tunnel insulating layer, an interlayer insulating layer on the first charge trapping layer, a second charge trapping layer on the interlayer insulating layer, a blocking insulating layer on the second charge trapping layer, and a gate electrode on the blocking insulating layer. The capacitorless DRAM may include the gate stack on the substrate, and a source and a drain in the substrate on both sides of the gate stack.
摘要翻译：提供了一种栅极堆叠，包括栅极堆叠的无电容动态随机存取存储器（DRAM）及其制造和操作的方法。用于无电容器DRAM的栅极堆叠可以包括衬底上的隧道绝缘层，隧道绝缘层上的第一电荷俘获层，第一电荷俘获层上的层间绝缘层，层间绝缘层上的第二电荷俘获层，第二电荷俘获层上的阻挡绝缘层，以及阻挡绝缘层上的栅电极。无电容器DRAM可以包括衬底上的栅极堆叠，以及栅极叠层两侧的衬底中的源极和漏极。

46. 发明授权

US08674475B2 Antifuse and methods of operating and manufacturing the same 有权
标题翻译：防腐剂及其操作和制造方法相同
公开(公告)号：US08674475B2
公开(公告)日：2014-03-18
申请号：US12385391
申请日：2009-04-07
申请人： Deok-kee Kim , Jung-hun Sung , Sang-moo Choi , Soo-jung Hwang
发明人： Deok-kee Kim , Jung-hun Sung , Sang-moo Choi , Soo-jung Hwang
IPC分类号： H01L23/62
CPC分类号： H01L23/5252 , H01L29/78 , H01L2924/0002 , H01L2924/00
摘要： Provided are an antifuse and methods of operating and manufacturing the same. The antifuse may include first and second conductors separate from each other; a dielectric layer for an antifuse between the first and second conductors; and a diffusion layer between one of the first and second conductors and the dielectric layer.
摘要翻译：提供反熔丝及其操作和制造方法。反熔丝可以包括彼此分离的第一和第二导体; 用于第一和第二导体之间的反熔丝的电介质层; 以及在第一和第二导体之一和介电层之间的扩散层。

47. 发明授权

US08319761B2 Organic light emitting display and driving method thereof 有权
标题翻译：有机发光显示器及其驱动方法
公开(公告)号：US08319761B2
公开(公告)日：2012-11-27
申请号：US12219602
申请日：2008-07-24
申请人： Wang-jo Lee , Bo-yong Chung , Sang-moo Choi , Hyung-soo Kim
发明人： Wang-jo Lee , Bo-yong Chung , Sang-moo Choi , Hyung-soo Kim
IPC分类号： G06F3/038 , G09G3/30
CPC分类号： G09G3/3275 , G09G3/20 , G09G3/2022 , G09G2310/0235 , G09G2310/0291 , G09G2310/0297
摘要： An organic light emitting display configured to be driven using a frame divided into a plurality of sub-frames includes a data driver configured to supply a plurality of data signals to output lines during a first period of one horizontal period of the sub-frame, a scan driver configured to sequentially supply a scan signal to scan lines during a second period of the one horizontal period of the sub-frame, a demultiplexer coupled to each output line, the demultiplexer being configured to supply the data signals to a plurality of data lines, buffers configured to supply buffers supplying signals from the demultiplexers to the data lines, the buffers including PMOS transistors, and pixels disposed at intersections of the scan lines and the data lines, the pixels being configured to display images corresponding to the data signals.
摘要翻译：配置为使用划分为多个子帧的帧来驱动的有机发光显示器包括数据驱动器，被配置为在子帧的一个水平周期的第一周期期间将多个数据信号提供给输出行，扫描驱动器，其被配置为在所述子帧的所述一个水平周期的第二周期期间将扫描信号顺序地提供给扫描线，耦合到每个输出线的解复用器，所述解复用器被配置为将数据信号提供给多个数据线缓冲器，被配置为提供缓冲器，其向解复用器提供信号到数据线，缓冲器包括PMOS晶体管，以及设置在扫描线和数据线的交点处的像素，所述像素被配置为显示对应于数据信号的图像。

48. 发明授权

US08111218B2 Pixel, organic light emitting display using the same, and driving method thereof 有权
标题翻译：像素，使用其的有机发光显示器及其驱动方法
公开(公告)号：US08111218B2
公开(公告)日：2012-02-07
申请号：US12073209
申请日：2008-03-03
申请人： Sang-moo Choi
发明人： Sang-moo Choi
IPC分类号： G09G3/30
CPC分类号： G09G3/3233 , G09G3/3266 , G09G3/3291 , G09G2300/0809 , G09G2300/0819 , G09G2300/0852 , G09G2300/0861 , G09G2310/0262 , G09G2310/06 , G09G2320/043 , G09G2320/045
摘要： A pixel, an organic light emitting display using the pixel, and a driving method thereof may compensate for degradation of an organic light emitting diode. The pixel includes the organic light emitting diode and a drive transistor that supplies an electric current to the organic light emitting diode. A pixel circuit compensates a threshold voltage of the drive transistor. A compensator controls the voltage of the gate electrode of the drive transistor in order to compensate a degradation of the organic light emitting diode.
摘要翻译：像素，使用该像素的有机发光显示器及其驱动方法可以补偿有机发光二极管的劣化。像素包括有机发光二极管和向有机发光二极管提供电流的驱动晶体管。像素电路补偿驱动晶体管的阈值电压。补偿器控制驱动晶体管的栅电极的电压，以补偿有机发光二极管的劣化。

49. 发明申请

US20090115795A1 INCREMENTAL BRIGHTNESS COMPENSATION SYSTEMS, DEVICES AND METHODS FOR ORGANIC LIGHT EMITTING DISPLAY (OLED) 审中-公开
标题翻译：增益亮度补偿系统，有机发光显示器（OLED）的装置和方法
公开(公告)号：US20090115795A1
公开(公告)日：2009-05-07
申请号：US12031971
申请日：2008-02-15
申请人： Han-su Pae , Sang-moo Choi , Do-hyung Ryu
发明人： Han-su Pae , Sang-moo Choi , Do-hyung Ryu
IPC分类号： G09G5/02
CPC分类号： G09G3/3283 , G09G2320/0233 , G09G2320/0285 , G09G2360/145
摘要： An Organic Light Emitting Display (OLED) includes an array of OLED devices and an incremental OLED brightness compensation system/method. The incremental OLED brightness compensation system/method is configured to incrementally change an electrical supply of the array of OLED devices in response to monitoring a measure of variation between an actual brightness and a desired brightness of the array of OLED devices, so as to cause the OLED to incrementally attain the desired brightness.
摘要翻译：有机发光显示器（OLED）包括OLED器件阵列和增量OLED亮度补偿系统/方法。增量OLED亮度补偿系统/方法被配置为响应于监测OLED器件阵列的实际亮度和期望亮度之间的变化的度量而逐渐改变OLED器件阵列的电源，从而使得 OLED逐渐达到所需的亮度。

50. 发明申请

US20090061613A1 Method of forming aluminum oxide layer and method of manufacturing charge trap memory device using the same 有权
标题翻译：形成氧化铝层的方法和使用其制造电荷陷阱存储器件的方法
公开(公告)号：US20090061613A1
公开(公告)日：2009-03-05
申请号：US12153655
申请日：2008-05-22
申请人： Sang-moo Choi , Kwang-soo Seol , Woong-chul Shin , Sang-jin Park , Eun-ha Lee , Jung-hun Sung
发明人： Sang-moo Choi , Kwang-soo Seol , Woong-chul Shin , Sang-jin Park , Eun-ha Lee , Jung-hun Sung
IPC分类号： H01L21/3205 , H01L21/44
CPC分类号： H01L21/28282 , H01L21/02178 , H01L21/02263 , H01L21/02356 , H01L21/02362 , H01L21/31604 , H01L21/3162
摘要： Provided is a method of forming an aluminum oxide layer and a method of manufacturing a charge trap memory device using the same. The method of forming an aluminum oxide layer may include forming an amorphous aluminum oxide layer on an underlying layer, forming a crystalline auxiliary layer on the amorphous aluminum oxide layer, and crystallizing the amorphous aluminum oxide layer. Forming the crystalline auxiliary layer may include forming an amorphous auxiliary layer on the amorphous aluminum oxide layer; and crystallizing the amorphous auxiliary layer.
摘要翻译：提供一种形成氧化铝层的方法以及使用其形成电荷阱存储装置的方法。形成氧化铝层的方法可以包括在下层上形成非晶态氧化铝层，在非晶态氧化铝层上形成结晶性辅助层，并使无定形氧化铝层结晶。形成结晶辅助层可以包括在无定形氧化铝层上形成非晶态辅助层; 并使无定形辅助层结晶。

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