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41. 发明授权

US06288435B1 Continuous amorphous silicon layer sensors using doped poly-silicon back contact 有权
标题翻译：连续非晶硅层传感器采用掺杂多晶硅背接触
公开(公告)号：US06288435B1
公开(公告)日：2001-09-11
申请号：US09473578
申请日：1999-12-28
申请人： Ping Mei , Jeng Ping Lu , Francesco Lemmi , Robert A. Street , James B. Boyce
发明人： Ping Mei , Jeng Ping Lu , Francesco Lemmi , Robert A. Street , James B. Boyce
IPC分类号： H01L31075
CPC分类号： H01L27/14603 , H01L27/14665
摘要： A method and apparatus for reducing vertical leakage current in a high fill factor sensor array is described. Reduction of vertical leakage current is achieved by eliminating Schottky junction interfaces that occur between metal back contacts and intrinsic amorphous silicon layers. One method of eliminating the Schottky junction uses an extra wide region of N doped amorphous silicon to serve as a buffer between the metal back contact and the intrinsic amorphous silicon layer. Another method of eliminating the Schottky junction completely replaces the metal back contact and the N doped amorphous silicon layer with a substitute material such as N doped poly-silicon.
摘要翻译：描述了用于减少高填充因子传感器阵列中的垂直泄漏电流的方法和装置。通过消除在金属背接触和本征非晶硅层之间发生的肖特基结界面来实现垂直漏电流的减小。消除肖特基结的一种方法使用N掺杂非晶硅的超宽区域作为金属背接触和本征非晶硅层之间的缓冲区。消除肖特基结的另一种方法用诸如N掺杂多晶硅的替代材料完全替代金属背接触和N掺杂的非晶硅层。

42. 发明授权

US5789737A High dynamic range segmented pixel sensor array 失效
标题翻译：高动态范围分段像素传感器阵列
公开(公告)号：US5789737A
公开(公告)日：1998-08-04
申请号：US787461
申请日：1997-01-22
申请人： Robert A. Street
发明人： Robert A. Street
IPC分类号： H01L27/146 , H04N1/028 , H04N1/19 , H01L31/00
CPC分类号： H01L27/14643
摘要： A photodiode sensor for use as a pixel element of a sensor array includes the sensor area segmented into a plurality of discrete portions. Each discrete portion has a distinctive responsiveness to incident illumination, either with regard to capacitance or sensitivity. The portions are in common communication with a data line for generating a sum charged output representative of the illumination on the cumulative sensor portions. Since the dynamic range of the cumulative discrete portions is greater than any single one sensor portion, a wider dynamic range for sensor operability is achieved.
摘要翻译：用作传感器阵列的像素元件的光电二极管传感器包括被分割成多个离散部分的传感器区域。每个离散部分对于电容或灵敏度都具有对入射照明的独特响应。这些部分与用于产生表示累积传感器部分上的照明的和的充电输出的数据线共同通信。由于累积离散部分的动态范围大于任何单个传感器部分的动态范围，所以实现了用于传感器可操作性的更宽的动态范围。

43. 发明授权

US5475212A Apparatus for imaging multiple radiation beams 失效
标题翻译：用于对多个辐射束进行成像的装置
公开(公告)号：US5475212A
公开(公告)日：1995-12-12
申请号：US441902
申请日：1995-05-16
申请人： Steven E. Nelson , Robert A. Street
发明人： Steven E. Nelson , Robert A. Street
IPC分类号： A61B6/00 , G01T1/00 , G01T1/20 , G01T1/29 , G03B42/02 , H04N1/028 , H04N1/40 , H04N5/32 , H04N5/372 , H04N5/378
CPC分类号： H04N1/0282 , G01T1/2018 , G01T1/2928 , H04N1/02815 , H04N1/0287 , H04N1/40 , H04N3/155 , H04N5/3205
摘要： A radiation imaging method and system for use in various imaging techniques includes a source of radiation at first and second wavelengths. A first radiation target array receives the radiation from the first wavelength at first spacial locations to produce an array of output signals at locations within the first radiation target array related to the magnitude of the radiation at each of the first spacial locations. A second radiation target array receives the radiation at the second wavelength at second spacial locations to produce an array of output signals at locations within the second radiation target array related to the magnitude of the radiation at each of the second spacial locations. The first and second outputs are combined to produce combined image signals that has increased contrast from that which would be produced by either the first or the second output alone. In a preferred embodiment, the first and second radiation target arrays comprise amorphous silicon arrays in which sensor data from the first and second radiation targets is synchronously clocked from the array.
摘要翻译：用于各种成像技术的放射线成像方法和系统包括在第一和第二波长处的辐射源。第一辐射目标阵列在第一空间位置处接收来自第一波长的辐射，以在与第一空间位置处的每个处的辐射的幅度相关的第一辐射目标阵列内的位置处产生输出信号的阵列。第二辐射目标阵列在第二空间位置处接收处于第二波长的辐射，以在第二辐射目标阵列内的位置处产生与第二空间位置中的每一个处的辐射幅度相关的输出信号阵列。第一和第二输出被组合以产生具有增加的对比度的组合图像信号，其与由第一或第二输出单独产生的相反。在优选实施例中，第一和第二辐射靶阵列包括非晶硅阵列，其中来自第一和第二辐射目标的传感器数据与阵列同步地计时。

44. 发明授权

US5262649A Thin-film, flat panel, pixelated detector array for real-time digital imaging and dosimetry of ionizing radiation 失效
标题翻译：薄膜，平板，像素化检测器阵列，用于电离辐射的实时数字成像和剂量测定
公开(公告)号：US5262649A
公开(公告)日：1993-11-16
申请号：US817364
申请日：1992-01-06
申请人： Larry E. Antonuk , Robert A. Street
发明人： Larry E. Antonuk , Robert A. Street
IPC分类号： A61B6/03 , A61N5/10 , G01T1/24 , G01T1/29 , H01L27/146 , H01L31/09 , H01L31/10 , H04N5/32
CPC分类号： A61B6/032 , A61B6/4258 , A61N5/1048 , G01T1/2018 , H01L27/14609 , H01L27/14618 , H01L27/14623 , H01L27/14663 , A61N2005/1072 , A61N5/1049 , H01L2924/0002 , H04N5/32
摘要： A thin-film, flat panel, pixelated detector array serving as a real-time digital imager and dosimeter for diagnostic or megavoltage X rays or gamma rays, including a plurality of photodiodes made of hydrogenated amorphous silicon arrayed in columns and rows upon a glass substrate. Each photodiode is connected to a thin film field effect transistor also located upon the glass or quartz substrate. Upper and lower metal contacts are located below and above the photodiodes to provide the photodiodes with a reverse bias. The capacitance of each photodiode when multiplied by the resistance of the field effect transistor to which it is connected yields an RC time constant, .tau..sub.RC, sufficiently small to allow fluoroscopic or radiographic imaging in real time. Specifically, ##EQU1## where P=the pixel-pixel pitch in .mu.m, where .about.25.ltoreq.p.ltoreq..about.10,000,L=the length, in cm, of one column of pixels sensors of the array, where .about.2.ltoreq.L.ltoreq..about.60,IFPS=instantaneous frame rate per second which is the effective rate at which the array is being readout, where .about.1.ltoreq.IFPS.ltoreq..about.500, andSN=the inverse of the degree to which each pixel sensor needs to be sampled and thus recharged, where .about.10.ltoreq.SN.ltoreq..about.10,000.
摘要翻译：一种用作诊断或兆伏X射线或伽马射线的实时数字成像仪和剂量计的薄膜，平板，像素化检测器阵列，包括在玻璃基板上以列和列排列的氢化非晶硅制成的多个光电二极管。每个光电二极管连接到也位于玻璃或石英衬底上的薄膜场效应晶体管。上下金属触点位于光电二极管的下方和上方，以提供具有反向偏压的光电二极管。当与其连接的场效应晶体管的电阻相乘时，每个光电二极管的电容产生足够小的RC时间常数τRC RC，以允许实时荧光镜或放射成像。具体来说，其中P =以μm为单位的像素像素间距，其中DIFFERENCE 25

45. 发明授权

US5050990A Variable detector geometry for resolving and sensing apparatus for filtering and other applications 失效
标题翻译：用于分辨和感测过滤和其他应用设备的可变探测器几何
公开(公告)号：US5050990A
公开(公告)日：1991-09-24
申请号：US572918
申请日：1990-08-24
申请人： Z. Erol Smith, III , Robert A. Street
发明人： Z. Erol Smith, III , Robert A. Street
IPC分类号： G01J3/14 , G01J3/28 , G01J3/50 , H04N1/48 , H04N9/04
CPC分类号： G01J3/50 , G01J3/0259 , G01J3/2803 , G01J3/502 , H04N1/488 , H04N9/045 , G01J2003/2826 , G01J2003/507 , G01J3/0205 , G01J3/0256 , G01J3/14 , G01J3/465
摘要： An image sensing apparatus of the type employing resolving and sensing means is provided with sensing means of selected size and geometry to allow approximation of arbitrary filter response. The sensing means of selected size and geometry may be incorporated into compact, self contained image resolving and sensing apparatus having a transparent substrate for resolving an incident image by refraction, diffraction or other suitable mechanism. The sensing means may be located directly on a surface of the transparent substrate. Logic and select circuitry may be integrally and simultaneously formed with the sensing means. The size and geometry of the sensing means may enable approximation to color inhibition and other effects to allow approximation of the spectral response of the human eye.
摘要翻译：使用分辨和感测装置的类型的图像感测装置设置有选定尺寸和几何形状的感测装置，以允许近似任意的滤波器响应。所选择的尺寸和几何形状的感测装置可以结合到具有用于通过折射，衍射或其它适当机构分辨入射图像的透明基板的紧凑的自包含图像分辨和感测装置中。感测装置可以直接位于透明基板的表面上。逻辑和选择电路可以与感测装置整体并同时形成。感测装置的尺寸和几何形状可以实现近似颜色抑制和其它效果，以允许对人眼的光谱响应的近似。

46. 发明授权

US5037201A Spectral resolving and sensing apparatus 失效
标题翻译：光谱分辨和感测装置
公开(公告)号：US5037201A
公开(公告)日：1991-08-06
申请号：US502473
申请日：1990-03-30
申请人： Zerol Smith, III , Robert F. Tow , Robert A. Street
发明人： Zerol Smith, III , Robert F. Tow , Robert A. Street
IPC分类号： G01J3/12 , G01J3/02 , G01J3/14 , G01J3/18 , G01J3/36 , G01J3/50
CPC分类号： G01J3/18 , G01J3/0259 , G01J3/14 , G01J3/0256 , G01J3/36
摘要： A compact, self contained image resolving and sensing apparatus of the type used in electronic imaging applications includes a plurality of sensing devices such as photodetectors formed on a transparent substrate capable of resolving a polychromatic image incident thereupon. The mechanism by which the substrate resolves the incident image may be refraction, diffraction or other suitable mechanism. The sensing devices are sized and located on the substrate such that they are capable of detecting one or more wavelength components of the resolved polychromatic image. Logic and select circuitry may be formed on the substrate generally contemporaneously and of similar materials as the sensing device.

47. 发明授权

US09539736B2 Mechanical method for producing micro- or nano-scale textures 有权
标题翻译：用于生产微米或纳米尺度纹理的机械方法
公开(公告)号：US09539736B2
公开(公告)日：2017-01-10
申请号：US13569153
申请日：2012-08-07
申请人： David Eric Schwartz , Matthew D. Eisaman , Sourobh Raychaudhuri , Philipp H. Schmaelzle , Robert A. Street , Sean Garner , Baomin Xu , Jiye Lee
发明人： David Eric Schwartz , Matthew D. Eisaman , Sourobh Raychaudhuri , Philipp H. Schmaelzle , Robert A. Street , Sean Garner , Baomin Xu , Jiye Lee
IPC分类号： B24B1/00 , B26D3/08 , B26D3/06
CPC分类号： B26D3/08 , B26D3/06 , H01L2251/105 , Y10T83/0333 , Y10T83/0341
摘要： A mechanical method for producing micro-scale and nano-scale textures that facilitates, for example, the cost-effective production of nanostructures on large-scale substrates, e.g., during the large-scale production of thin-film solar cells. A “scratcher” (multi-pointed abrasion mechanism) is maintained in a precise position relative to a target substrate such that micron-level features (protrusions) extending from the scratcher's base structure are precisely positioned to contact a surface material layer of the target substrate with a predetermined amount of force, and then moved relative to the substrate (e.g., by way of a conveying mechanism) while maintaining the pressing force such that the micron-level features define elongated parallel nano-scale grooves and/or form nano-scale ridges in the surface material layer (i.e., by mechanically displacing) portions of the surface material layer to form the nano-scale grooves/ridges).
摘要翻译：用于生产微尺度和纳米尺度织构的机械方法，其例如在大规模生产基片上，例如在薄膜太阳能电池的大规模生产过程中有助于例如成本有效地生产纳米结构。 “刮刀”（多点磨损机构）被保持在相对于目标基板的精确位置，使得从刮刀基部结构延伸的微米级特征（突起）被精确地定位成与目标基板的表面材料层接触以预定量的力，然后相对于基底（例如，通过输送机构）移动，同时保持挤压力，使得微米级特征限定细长的平行纳米级凹槽和/或形成纳米尺度表面材料层中的隆起（即，通过机械移位）表面材料层的部分以形成纳米尺度的沟槽/脊）。

48. 发明授权

US08405832B2 Light scattering measurement system based on flexible sensor array 有权
标题翻译：基于柔性传感器阵列的光散射测量系统
公开(公告)号：US08405832B2
公开(公告)日：2013-03-26
申请号：US12635369
申请日：2009-12-10
申请人： Philipp Helmut Schmaelzle , Robert A. Street
发明人： Philipp Helmut Schmaelzle , Robert A. Street
IPC分类号： G01J1/00 , G01J3/00 , G01N21/55
CPC分类号： G01N21/4738 , G01N2021/4711 , G01N2201/0655
摘要： A compact, optical measurement system has a non-flat detector array having multiple detector elements arranged on a flexible substrate in a monolithic fashion, one or more illumination sources arranged to provide more than one angle of incidence of light on a subject being measured, and a detection system in electrical communication with the detector array, the detection system arranged to receive inputs from the detector array and provide a measurement from the inputs. A method of measuring reflectance of a surface includes placing the surface adjacent a hemispherical detector array, illuminating the surface from a predetermined angle of incidence, simultaneously detecting reflectance at multiple emission angles using the hemispherical detector array, and repeating the illuminating and detecting processes at different angles of incidence. Optional arrays of lenses, baffles and filters may be employed by the system.
摘要翻译：紧凑的光学测量系统具有非平坦检测器阵列，其具有以单片方式布置在柔性基板上的多个检测器元件，一个或多个照明源布置成在被测量的被摄体上提供多于一个入射角，以及与所述检测器阵列电通信的检测系统，所述检测系统被布置成接收来自所述检测器阵列的输入并提供来自所述输入的测量。测量表面的反射率的方法包括将表面邻近半球形检测器阵列，从预定的入射角度照射表面，同时使用半球形检测器阵列检测多个发射角的反射率，并重复不同的照射和检测过程入射角。透镜，挡板和过滤器的可选阵列可以由系统使用。

49. 发明授权

US08120232B2 Sensors and actuators using piezo polymer layers 有权
标题翻译：使用压电聚合物层的传感器和执行器
公开(公告)号：US08120232B2
公开(公告)日：2012-02-21
申请号：US12356475
申请日：2009-01-20
申请人： Jurgen H. Daniel , Ana C. Arias , Robert A. Street
发明人： Jurgen H. Daniel , Ana C. Arias , Robert A. Street
IPC分类号： H01L41/08
CPC分类号： H01L41/08 , G01L1/16 , G01L9/008 , G01P15/0802 , G01P15/09 , G01P15/0922 , H01L41/047 , H01L41/094 , H01L41/0973 , H01L41/1134 , H01L41/1136 , H01L41/22
摘要： A device has a substrate, a piezo polymer layer arranged adjacent the substrate, a first electrode in contact with a first side of the layer, and a second electrode arranged adjacent the first electrode, such that when the piezo layer flexes, the first and second electrodes are arranged to detect one of a change in voltage or resistance, wherein at least one of the piezo polymer layer or the electrodes are deposited by printing. A method including depositing a spacer layer onto a substrate, depositing a piezo polymer layer onto the substrate, patterning an array of first electrodes in contact with the piezo polymer layer, and patterning an array of second electrodes adjacent the array of first electrodes, wherein depositing includes one of printing and laminating and pattering includes one of printing and etching. A method including laminating a piezo polymer layer onto a substrate, such that the layer forms at least one cantilever beam, forming a first electrode on one side of the layer, arranging a second electrode adjacent the first electrode, printing a polymer layer on the cantilever beam, and printing a proof mass on the cantilever beam.
摘要翻译：器件具有衬底，邻近衬底布置的压电聚合物层，与层的第一侧接触的第一电极和邻近第一电极布置的第二电极，使得当压电层弯曲时，第一和第二布置电极以检测电压或电阻的变化之一，其中通过印刷沉积至少一个压电聚合物层或电极。一种方法，包括在衬底上沉积间隔层，将压电聚合物层沉积到衬底上，图案化与压电聚合物层接触的第一电极的阵列，以及图案化与第一电极阵列相邻的第二电极阵列，其中沉积包括印刷和层压之一，并且图案包括印刷和蚀刻之一。一种方法，包括将压电聚合物层层压到基底上，使得该层形成至少一个悬臂梁，在该层的一侧上形成第一电极，将第二电极与第一电极相邻，将聚合物层印刷在悬臂上梁，并在悬臂梁上打印一个证明物质。

50. 发明授权

US08110450B2 Printed TFT and TFT array with self-aligned gate 有权
公开(公告)号：US08110450B2
公开(公告)日：2012-02-07
申请号：US11959956
申请日：2007-12-19
申请人： Robert A. Street
发明人： Robert A. Street
IPC分类号： H01L21/336
CPC分类号： H01L29/4908 , H01L27/124 , H01L27/1292 , H01L29/66742 , H01L29/786
摘要： A method is used to form a self-aligning thin film transistor. The thin film transistor includes a gate contact formed with a state-switchable material, and a dielectric layer to isolate the gate contact. A source-drain layer, which includes a source contact, and a drain contact are formed with a source-drain material. An area of the gate contact is exposed to a form of energy, wherein the energy transforms a portion of the state switchable material from a non-conductive material to a conductive material, the conductive portion defining the gate contact. A semiconductor material is formed between the source contact and the drain contact.

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