专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

41. 发明授权

US08460983B1 Method for modifying and controlling the threshold voltage of thin film transistors 有权
标题翻译：修改和控制薄膜晶体管阈值电压的方法
公开(公告)号：US08460983B1
公开(公告)日：2013-06-11
申请号：US12357065
申请日：2009-01-21
申请人： Wenzhuo Guo , Fabio Zürcher , Arvind Kamath , Joerg Rockenberger
发明人： Wenzhuo Guo , Fabio Zürcher , Arvind Kamath , Joerg Rockenberger
IPC分类号： C09D183/16 , H01L21/208
CPC分类号： H01L21/02667 , C08G77/56 , C08K5/55 , C08K2201/001 , C09D11/52 , C09D183/16 , H01L21/02532 , H01L21/02576 , H01L21/02579 , H01L21/02628 , H01L21/208 , H01L27/1292 , H01L29/167 , H01L29/66757
摘要： Doped semiconductor ink formulations, methods of making doped semiconductor ink formulations, methods of coating or printing thin films, methods of forming electronic devices and/or structures from the thin films, and methods for modifying and controlling the threshold voltage of a thin film transistor using the films are disclosed. A desired dopant may be added to an ink formulation comprising a Group IVA compound and a solvent, and then the ink may be printed on a substrate to form thin films and conductive structures/devices, such as thin film transistors. By adding a customized amount of the dopant to the ink prior to printing, the threshold voltage of a thin film transistor made from the doped semiconductor ink may be independently controlled upon activation of the dopant.
摘要翻译：掺杂的半导体油墨配方，制造掺杂的半导体油墨配方的方法，涂覆或印刷薄膜的方法，从薄膜形成电子器件和/或结构的方法，以及用于修改和控制薄膜晶体管的阈值电压的方法，其使用披露了这些电影。可以将期望的掺杂剂添加到包含IVA族化合物和溶剂的油墨配方中，然后可以将油墨印刷在基材上以形成薄膜和诸如薄膜晶体管的导电结构/器件。通过在打印之前向墨水添加定制量的掺杂剂，可以在掺杂剂激活时独立地控制由掺杂半导体油墨制成的薄膜晶体管的阈值电压。

42. 发明申请

US20110104877A1 Compositions and Methods for Forming a Semiconducting and/or Silicon-Containing Film, and Structures Formed Therefrom 审中-公开
标题翻译：用于形成半导体和/或含硅膜的组合物和方法，以及由此形成的结构
公开(公告)号：US20110104877A1
公开(公告)日：2011-05-05
申请号：US12984535
申请日：2011-01-04
申请人： Klaus Kunze , Scott Haubrich , Fabio Zurcher , Brent Ridley , Joerg Rockenberger
发明人： Klaus Kunze , Scott Haubrich , Fabio Zurcher , Brent Ridley , Joerg Rockenberger
IPC分类号： H01L21/20 , B82Y99/00
CPC分类号： C23C18/14 , C09D11/52 , C23C18/1204 , C23C18/1212 , C23C18/122 , C23C18/1225 , C23C18/127 , C23C18/1275 , H01L21/02532 , H01L21/02601 , H01L21/02636 , H01L29/66757 , Y10T428/24802 , Y10T428/24926 , Y10T428/31663
摘要： Compositions, inks and methods for forming a patterned silicon-containing film and patterned structures including such a film. The composition generally includes (a) passivated semiconductor nanoparticles and (b) first and second cyclic Group IVA compounds in which the cyclic species predominantly contains Si and/or Ge atoms. The ink generally includes the composition and a solvent in which the composition is soluble. The method generally includes the steps of (1) printing the composition or ink on a substrate to form a pattern, and (2) curing the patterned composition or ink. In an alternative embodiment, the method includes the steps of (i) curing either a semiconductor nanoparticle composition or at least one cyclic Group IVA compound to form a thin film, (ii) coating the thin film with the other, and (iii) curing the coated thin film to form a semiconducting thin film. The semiconducting thin film includes a sintered mixture of semiconductor nanoparticles in hydrogenated, at least partially amorphous silicon and/or germanium. The thin film exhibits improved conductivity, density, adhesion and/or carrier mobility relative to an otherwise identical structure made by an identical process, but without either the semiconductor nanoparticles or the hydrogenated Group IVA element polymer. The present invention advantageously provides semiconducting thin film structures having qualities suitable for use in electronics applications, such as display devices or RF ID tags, while enabling high-throughput printing processes that form such thin films in seconds or minutes, rather than hours or days as with conventional photolithographic processes.
摘要翻译：用于形成图案化含硅膜的组合物，油墨和方法以及包括这种膜的图案化结构。组合物通常包括（a）钝化的半导体纳米颗粒和（b）其中环状物质主要含有Si和/或Ge原子的第一和第二环状IVA族化合物。油墨通常包括组合物和其中组合物可溶的溶剂。该方法通常包括以下步骤：（1）在基材上印刷组合物或油墨以形成图案，和（2）固化图案化的组合物或油墨。在替代实施方案中，该方法包括以下步骤：（i）固化半导体纳米颗粒组合物或至少一种环状IVA族化合物以形成薄膜，（ii）将薄膜与另一种膜相涂，和（iii）固化涂覆的薄膜形成半导体薄膜。半导体薄膜包括在氢化，至少部分非晶硅和/或锗中的半导体纳米颗粒的烧结混合物。相对于通过相同方法制造的其它相同结构，但不含半导体纳米颗粒或氢化IVA族元素聚合物，该薄膜表现出改进的导电性，密度，粘附性和/或载流子迁移率。本发明有利地提供了具有适合用于电子应用（例如显示装置或RF ID标签）的质量的半导体薄膜结构，同时能够在数秒或数分钟而不是几小时或几天内形成这种薄膜的高通量印刷工艺，与传统的光刻工艺。

43. 发明申请

US20090053536A1 Compositions and Methods for Forming a Semiconducting and/or Silicon-Containing Film, and Structures Formed Therefrom 有权
标题翻译：用于形成半导体和/或含硅膜的组合物和方法，以及由此形成的结构
公开(公告)号：US20090053536A1
公开(公告)日：2009-02-26
申请号：US12261002
申请日：2008-10-29
申请人： Klaus KUNZE et al. , Scott Haubrich , Fabio Zurcher , Brent Ridley , Joerg Rockenberger
发明人： Klaus KUNZE et al. , Scott Haubrich , Fabio Zurcher , Brent Ridley , Joerg Rockenberger
IPC分类号： B32B13/04 , H01L29/06 , C04B41/50 , H01L21/31
CPC分类号： C23C18/14 , C09D11/52 , C23C18/1204 , C23C18/1212 , C23C18/122 , C23C18/1225 , C23C18/127 , C23C18/1275 , H01L21/02532 , H01L21/02601 , H01L21/02636 , H01L29/66757 , Y10T428/24802 , Y10T428/24926 , Y10T428/31663
摘要： Compositions, inks and methods for forming a patterned silicon-containing film and patterned structures including such a film. The composition generally includes (a) passivated semiconductor nanoparticles and (b) first and second cyclic Group IVA compounds in which the cyclic species predominantly contains Si and/or Ge atoms. The ink generally includes the composition and a solvent in which the composition is soluble. The method generally includes the steps of (1) printing the composition or ink on a substrate to form a pattern, and (2) curing the patterned composition or ink. In an alternative embodiment, the method includes the steps of (i) curing either a semiconductor nanoparticle composition or at least one cyclic Group IVA compound to form a thin film, (ii) coating the thin film with the other, and (iii) curing the coated thin film to form a semiconducting thin film. The semiconducting thin film includes a sintered mixture of semiconductor nanoparticles in hydrogenated, at least partially amorphous silicon and/or germanium. The thin film exhibits improved conductivity, density, adhesion and/or carrier mobility relative to an otherwise identical structure made by an identical process, but without either the semiconductor nanoparticles or the hydrogenated Group IVA element polymer. The present invention advantageously provides semiconducting thin film structures having qualities suitable for use in electronics applications, such as display devices or RF ID tags, while enabling high-throughput printing processes that form such thin films in seconds or minutes, rather than hours or days as with conventional photolithographic processes.
摘要翻译：用于形成图案化含硅膜的组合物，油墨和方法以及包括这种膜的图案化结构。组合物通常包括（a）钝化的半导体纳米颗粒和（b）其中环状物质主要含有Si和/或Ge原子的第一和第二环状IVA族化合物。油墨通常包括组合物和其中组合物可溶的溶剂。该方法通常包括以下步骤：（1）在基材上印刷组合物或油墨以形成图案，和（2）固化图案化的组合物或油墨。在替代实施方案中，该方法包括以下步骤：（i）固化半导体纳米颗粒组合物或至少一种环状IVA族化合物以形成薄膜，（ii）将薄膜与另一种膜相涂，和（iii）固化涂覆的薄膜形成半导体薄膜。半导体薄膜包括在氢化，至少部分非晶硅和/或锗中的半导体纳米颗粒的烧结混合物。相对于通过相同方法制造的其它相同结构，但不含半导体纳米颗粒或氢化IVA族元素聚合物，该薄膜表现出改进的导电性，密度，粘附性和/或载流子迁移率。本发明有利地提供了具有适合用于电子应用（例如显示装置或RF ID标签）的质量的半导体薄膜结构，同时能够在数秒或数分钟而不是几小时或几天内形成这种薄膜的高通量印刷工艺，与传统的光刻工艺。

44. 发明授权

US08846507B2 Silicon polymers, methods of polymerizing silicon compounds, and methods of forming thin films from such silicon polymers 有权
标题翻译：硅聚合物，聚合硅化合物的方法，以及从这种硅聚合物形成薄膜的方法
公开(公告)号：US08846507B2
公开(公告)日：2014-09-30
申请号：US13897296
申请日：2013-05-17
申请人： Dmitry Karshtedt , Joerg Rockenberger , Fabio Zurcher , Brent Ridley , Erik Scher
发明人： Dmitry Karshtedt , Joerg Rockenberger , Fabio Zurcher , Brent Ridley , Erik Scher
IPC分类号： H01L21/02 , C08G77/00 , C07F7/02 , C09D183/16 , C08G77/60 , H01L27/12
CPC分类号： H01L21/02628 , C08G77/60 , C09D183/16 , H01L21/02282 , H01L27/1214 , H01L27/1292
摘要： Compositions and methods for controlled polymerization and/or oligomerization of hydrosilanes compounds including those of the general formulae SinH2n and SinH2n+2 as well as alkyl- and arylsilanes, to produce soluble silicon polymers as a precursor to silicon films having low carbon content.
摘要翻译：含有通式SinH2n和SinH2n + 2以及烷基和芳基硅烷的氢化硅烷化合物的受控聚合和/或低聚的组合物和方法，以生产可溶性硅聚合物作为具有低碳含量的硅膜的前体。

45. 发明申请

US20080085373A1 Silicon Polymers, Methods of Polymerizing Silicon Compounds, and Methods of Forming Thin Films from Such Silicon Polymers 有权
标题翻译：硅聚合物，聚合硅化合物的方法和从这种硅聚合物形成薄膜的方法
公开(公告)号：US20080085373A1
公开(公告)日：2008-04-10
申请号：US11867587
申请日：2007-10-04
申请人： Dmitry KARSHTEDT , Joerg Rockenberger , Fabio Zurcher , Brent Ridley , Erik Scher
发明人： Dmitry KARSHTEDT , Joerg Rockenberger , Fabio Zurcher , Brent Ridley , Erik Scher
IPC分类号： C08G79/00 , B05D3/06
CPC分类号： H01L21/02628 , C08G77/60 , C09D183/16 , H01L21/02282 , H01L27/1214 , H01L27/1292
摘要： Compositions and methods for controlled polymerization and/or oligomerization of hydrosilanes compounds including those of the general formulae SinH2n and SinH2n+2 as well as alkyl- and arylsilanes, to produce soluble silicon polymers as a precursor to silicon films having low carbon content.
摘要翻译：含硅烷化合物的受控聚合和/或低聚的组合物和方法，包括通式为Si H n H 2n和H n H > 2n + 2，以及烷基和芳基硅烷，以产生可溶性硅聚合物作为具有低碳含量的硅膜的前体。

46. 发明授权

US07259101B2 Nanoparticles and method for making the same 失效
公开(公告)号：US07259101B2
公开(公告)日：2007-08-21
申请号：US11271042
申请日：2005-11-10
申请人： Fabio Zurcher , Brent Ridley , Klaus Kunze , Scott Haubrich , Joerg Rockenberger
发明人： Fabio Zurcher , Brent Ridley , Klaus Kunze , Scott Haubrich , Joerg Rockenberger
IPC分类号： H01L21/302
CPC分类号： H01L21/02628 , B22F9/20 , B22F2998/00 , B82Y30/00 , C01G3/02 , C01G19/02 , C01G23/047 , C01G25/02 , C01G31/02 , C01G33/00 , C01G45/02 , C01G49/02 , C01G51/04 , C01P2002/52 , C01P2004/64 , H01L21/02532 , H01L21/02601 , H01L21/84 , H01L23/373 , H01L27/1292 , H01L2924/0002 , Y10S977/888 , B22F1/0022 , H01L2924/00
摘要： A method for making nanoparticles, nanoparticle inks and device layers therefrom is disclosed. In accordance with the present invention, nanoparticles are isolated from a composite material that is formed by treating a metal oxide precursor to form the metal nanoparticles and a metal oxide matrix. The nanoparticles are then isolated from the composite material by etching at least a portion of the metal oxide matrix to release the metal nanoparticles. In accordance with the embodiments of the invention, the nanoparticles are treated with surfactants and wetting agents either while etching or after etching, are isolated from the etchant and dispersed in a solvent medium and/or are otherwise treated or modified for use in a nanoparticle inks. A layer of the metal nanoparticle ink can then be used to form doped, undoped, patterned and unpatterned device layers or structures in micro-devices.

47. 发明授权

US07078276B1 Nanoparticles and method for making the same 失效
标题翻译：纳米颗粒和制造方法
公开(公告)号：US07078276B1
公开(公告)日：2006-07-18
申请号：US10339741
申请日：2003-01-08
申请人： Fabio Zurcher , Brent Ridley , Klaus Kunze , Scott Haubrich , Joerg Rockenberger
发明人： Fabio Zurcher , Brent Ridley , Klaus Kunze , Scott Haubrich , Joerg Rockenberger
IPC分类号： H01L21/84
CPC分类号： H01L21/02628 , B22F9/20 , B22F2998/00 , B82Y30/00 , C01G3/02 , C01G19/02 , C01G23/047 , C01G25/02 , C01G31/02 , C01G33/00 , C01G45/02 , C01G49/02 , C01G51/04 , C01P2002/52 , C01P2004/64 , H01L21/02532 , H01L21/02601 , H01L21/84 , H01L23/373 , H01L27/1292 , H01L2924/0002 , Y10S977/888 , B22F1/0022 , H01L2924/00
摘要： A method for making nanoparticles, nanoparticle inks and device layers therefrom is disclosed. In accordance with the present invention, nanoparticles are isolated from a composite material that is formed by treating a metal oxide precursor to form the metal nanoparticles and a metal oxide matrix. The nanoparticles are then isolated from the composite material by etching at least a portion of the metal oxide matrix to release the metal nanoparticles. In accordance with the embodiments of the invention, the nanoparticles are treated with surfactants and wetting agents either while etching or after etching, are isolated from the etchant and dispersed in a solvent medium and/or are otherwise treated or modified for use in a nanoparticle inks. A layer of the metal nanoparticle ink can then be used to form doped, undoped, patterned and unpatterned device layers or structures in micro-devices.
摘要翻译：公开了一种制备纳米颗粒，纳米颗粒油墨及其装置层的方法。根据本发明，从通过处理金属氧化物前体形成金属纳米颗粒和金属氧化物基质形成的复合材料分离纳米颗粒。然后通过蚀刻至少一部分金属氧化物基质以释放金属纳米颗粒，从复合材料中分离出纳米颗粒。根据本发明的实施方案，在蚀刻或蚀刻之后，用表面活性剂和润湿剂处理纳米颗粒，从蚀刻剂中分离并分散在溶剂介质中和/或以其它方式处理或改性以用于纳米颗粒油墨。然后可以使用一层金属纳米颗粒油墨在微型装置中形成掺杂的，未掺杂的，图案化的和无图案化的器件层或结构。

48. 发明申请

US20060094189A1 Nanoparticles and method for making the same 失效
标题翻译：纳米颗粒和制造方法
公开(公告)号：US20060094189A1
公开(公告)日：2006-05-04
申请号：US11271041
申请日：2005-11-10
申请人： Fabio Zurcher , Brent Ridley , Klaus Kunze , Scott Haubrich , Joerg Rockenberger
发明人： Fabio Zurcher , Brent Ridley , Klaus Kunze , Scott Haubrich , Joerg Rockenberger
IPC分类号： H01L21/336
CPC分类号： H01L21/02628 , B22F9/20 , B22F2998/00 , B82Y30/00 , C01G3/02 , C01G19/02 , C01G23/047 , C01G25/02 , C01G31/02 , C01G33/00 , C01G45/02 , C01G49/02 , C01G51/04 , C01P2002/52 , C01P2004/64 , H01L21/02532 , H01L21/02601 , H01L21/84 , H01L23/373 , H01L27/1292 , H01L2924/0002 , Y10S977/888 , B22F1/0022 , H01L2924/00
摘要： A method for making nanoparticles, nanoparticle inks and device layers therefrom is disclosed. In accordance with the present invention, nanoparticles are isolated from a composite material that is formed by treating a metal oxide precursor to form the metal nanoparticles and a metal oxide matrix. The nanoparticles are then isolated from the composite material by etching at least a portion of the metal oxide matrix to release the metal nanoparticles. In accordance with the embodiments of the invention, the nanoparticles are treated with surfactants and wetting agents either while etching or after etching, are isolated from the etchant and dispersed in a solvent medium and/or are otherwise treated or modified for use in a nanoparticle inks. A layer of the metal nanoparticle ink can then be used to form doped, undoped, patterned and unpattemed device layers or structures in micro-devices.
摘要翻译：公开了一种制备纳米颗粒，纳米颗粒油墨及其装置层的方法。根据本发明，从通过处理金属氧化物前体形成金属纳米颗粒和金属氧化物基质形成的复合材料分离纳米颗粒。然后通过蚀刻至少一部分金属氧化物基质以释放金属纳米颗粒，从复合材料中分离出纳米颗粒。根据本发明的实施方案，在蚀刻或蚀刻之后，用表面活性剂和润湿剂处理纳米颗粒，从蚀刻剂中分离并分散在溶剂介质中和/或以其它方式处理或改性以用于纳米颗粒油墨。然后可以使用一层金属纳米颗粒油墨来在微型装置中形成掺杂的，未掺杂的，图案化的和不经过设备的装置层或结构。

49. 发明申请

US20050008880A1 Compositions and methods for forming a semiconducting and/or silicon-containing film, and structures formed therefrom 有权
标题翻译：用于形成半导体和/或含硅膜的组合物和方法，以及由其形成的结构
公开(公告)号：US20050008880A1
公开(公告)日：2005-01-13
申请号：US10616147
申请日：2003-07-08
申请人： Klaus Kunze , Scott Haubrich , Fabio Zurcher , Brent Ridley , Joerg Rockenberger
发明人： Klaus Kunze , Scott Haubrich , Fabio Zurcher , Brent Ridley , Joerg Rockenberger
IPC分类号： B32B9/04 , B32B13/04 , C09D11/00 , H01L21/20 , H01L21/208 , H01L21/336 , H01L21/44
CPC分类号： C23C18/14 , C09D11/52 , C23C18/1204 , C23C18/1212 , C23C18/122 , C23C18/1225 , C23C18/127 , C23C18/1275 , H01L21/02532 , H01L21/02601 , H01L21/02636 , H01L29/66757 , Y10T428/24802 , Y10T428/24926 , Y10T428/31663
摘要： Compositions, inks and methods for forming a patterned silicon-containing film and patterned structures including such a film. The composition generally includes (a) passivated semiconductor nanoparticles and (b) first and second cyclic Group IVA compounds in which the cyclic species predominantly contains Si and/or Ge atoms. The ink generally includes the composition and a solvent in which the composition is soluble. The method generally includes the steps of (1) printing the composition or ink on a substrate to form a pattern, and (2) curing the patterned composition or ink. In an alternative embodiment, the method includes the steps of (i) curing either a semiconductor nanoparticle composition or at least one cyclic Group IVA compound to form a thin film, (ii) coating the thin film with the other, and (iii) curing the coated thin film to form a semiconducting thin film. The semiconducting thin film includes a sintered mixture of semiconductor nanoparticles in hydrogenated, at least partially amorphous silicon and/or germanium. The thin film exhibits improved conductivity, density, adhesion and/or carrier mobility relative to an otherwise identical structure made by an identical process, but without either the semiconductor nanoparticles or the hydrogenated Group IVA element polymer. The present invention advantageously provides semiconducting thin film structures having qualities suitable for use in electronics applications, such as display devices or RF ID tags, while enabling high-throughput printing processes that form such thin films in seconds or minutes, rather than hours or days as with conventional photolithographic processes.
摘要翻译：用于形成图案化含硅膜的组合物，油墨和方法以及包括这种膜的图案化结构。组合物通常包括（a）钝化的半导体纳米颗粒和（b）其中环状物质主要含有Si和/或Ge原子的第一和第二环状IVA族化合物。油墨通常包括组合物和其中组合物可溶的溶剂。该方法通常包括以下步骤：（1）在基材上印刷组合物或油墨以形成图案，和（2）固化图案化的组合物或油墨。在替代实施方案中，该方法包括以下步骤：（i）固化半导体纳米颗粒组合物或至少一种环状IVA族化合物以形成薄膜，（ii）将薄膜与另一种膜相涂，和（iii）固化涂覆的薄膜形成半导体薄膜。半导体薄膜包括在氢化，至少部分非晶硅和/或锗中的半导体纳米颗粒的烧结混合物。相对于通过相同方法制造的其它相同结构，但不含半导体纳米颗粒或氢化IVA族元素聚合物，该薄膜表现出改进的导电性，密度，粘附性和/或载流子迁移率。本发明有利地提供了具有适合用于电子应用（例如显示装置或RF ID标签）的质量的半导体薄膜结构，同时能够在数秒或数分钟而不是几小时或几天内形成这种薄膜的高通量印刷工艺，与传统的光刻工艺。

50. 发明授权

US08461284B2 Silicon polymers, methods of polymerizing silicon compounds, and methods of forming thin films from such silicon polymers 有权
标题翻译：硅聚合物，聚合硅化合物的方法以及从这种硅聚合物形成薄膜的方法
公开(公告)号：US08461284B2
公开(公告)日：2013-06-11
申请号：US13299318
申请日：2011-11-17
申请人： Dmitry Karshtedt , Joerg Rockenberger , Fabio Zürcher , Brent Ridley , Erik Scher
发明人： Dmitry Karshtedt , Joerg Rockenberger , Fabio Zürcher , Brent Ridley , Erik Scher
IPC分类号： C08G77/00 , C07F7/02 , C07F7/30 , H01L21/20
CPC分类号： H01L21/02628 , C08G77/60 , C09D183/16 , H01L21/02282 , H01L27/1214 , H01L27/1292
摘要： Compositions and methods for controlled polymerization and/or oligomerization of hydrosilanes compounds including those of the general formulae SinH2n and SinH2n+2 as well as alkyl- and arylsilanes, to produce soluble silicon polymers as a precursor to silicon films having low carbon content.
摘要翻译：含有通式SinH2n和SinH2n + 2以及烷基和芳基硅烷的氢化硅烷化合物的受控聚合和/或低聚的组合物和方法，以生产可溶性硅聚合物作为具有低碳含量的硅膜的前体。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式