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41. 发明授权

US08975137B2 Process of forming slit in substrate 有权
标题翻译：在基板上形成狭缝的工艺
公开(公告)号：US08975137B2
公开(公告)日：2015-03-10
申请号：US13179581
申请日：2011-07-11
申请人： Wen-Chieh Wang , Yi-Nan Chen , Hsien-Wen Liu
发明人： Wen-Chieh Wang , Yi-Nan Chen , Hsien-Wen Liu
IPC分类号： H01L21/336 , H01L21/3205 , H01L21/461 , H01L21/3065 , H01L21/308
CPC分类号： H01L21/3065 , H01L21/3085
摘要： A process of forming a slit in a substrate is provided. A mask layer is formed on a substrate, wherein the mask layer does not include carbon. An etching process is performed to be substrate by using the mask layer as a mask, so as to form a slit in the substrate. The etching gas includes Cl2, CF4 and CHF3, a molar ratio of CF4 to CHF3 is about 0.5-0.8, and a molar ratio of F to Cl is about 0.4-0.8, for example. Further, the step of performing the etching process simultaneously removes the mask layer.
摘要翻译：提供了在基板中形成狭缝的工艺。在基板上形成掩模层，其中掩模层不包括碳。通过使用掩模层作为掩模，进行蚀刻处理，以便在衬底中形成狭缝。蚀刻气体包括Cl 2，CF 4和CHF 3，CF 4与CHF 3的摩尔比为约0.5-0.8，F与Cl的摩尔比例如约为0.4-0.8。此外，进行蚀刻处理的步骤同时去除掩模层。

42. 发明授权

US08546234B2 Semiconductor process 有权
标题翻译：半导体工艺
公开(公告)号：US08546234B2
公开(公告)日：2013-10-01
申请号：US13154427
申请日：2011-06-06
申请人： Wen-Chieh Wang , Yi-Nan Chen , Hsien-Wen Liu
发明人： Wen-Chieh Wang , Yi-Nan Chen , Hsien-Wen Liu
IPC分类号： H01L21/20
CPC分类号： H01L29/66621 , H01L21/26506 , H01L21/26513 , H01L27/10876
摘要： A semiconductor process is provided. A mask layer is formed on a substrate and has a first opening exposing a portion of the substrate. Using the mask layer as a mask, a dry etching process is performed on the substrate to form a second opening therein. The second opening has a bottom portion and a side wall extending upwards and outwards from the bottom portion, wherein the bottom portion is exposed by the first opening and the side wall is covered by the mask layer. Using the mask layer as a mask, a vertical ion implantation process is performed on the bottom portion. A conversion process is performed, so as to form converting layers on the side wall and the bottom portion of the second opening, wherein a thickness of the converting layer on the side wall is larger than a thickness of the converting layer on the bottom portion.
摘要翻译：提供半导体工艺。在衬底上形成掩模层，并且具有暴露衬底的一部分的第一开口。使用掩模层作为掩模，在基板上进行干蚀刻处理，以在其中形成第二开口。第二开口具有底部和从底部向上并向外延伸的侧壁，其中底部由第一开口暴露，并且侧壁被掩模层覆盖。使用掩模层作为掩模，在底部进行垂直离子注入工艺。进行转换处理，以在第二开口的侧壁和底部形成转换层，其中侧壁上的转换层的厚度大于底部上的转换层的厚度。

43. 发明申请

US20130017684A1 PROCESS OF FORMING SLIT IN SUBSTRATE 有权
标题翻译：在基板上形成缝隙的过程
公开(公告)号：US20130017684A1
公开(公告)日：2013-01-17
申请号：US13179581
申请日：2011-07-11
申请人： Wen-Chieh Wang , Yi-Nan Chen , Hsien-Wen Liu
发明人： Wen-Chieh Wang , Yi-Nan Chen , Hsien-Wen Liu
IPC分类号： H01L21/306
CPC分类号： H01L21/3065 , H01L21/3085
摘要： A process of forming a slit in a substrate is provided. A mask layer is formed on a substrate, wherein the mask layer does not include carbon. An etching process is performed to be substrate by using the mask layer as a mask, so as to form a slit in the substrate. The etching gas includes Cl2, CF4 and CHF3, a molar ratio of CF4 to CHF3 is about 0.5-0.8, and a molar ratio of F to Cl is about 0.4-0.8, for example. Further, the step of performing the etching process simultaneously removes the mask layer.
摘要翻译：提供了在基板中形成狭缝的工艺。在基板上形成掩模层，其中掩模层不包括碳。通过使用掩模层作为掩模，进行蚀刻处理，以便在衬底中形成狭缝。蚀刻气体包括Cl 2，CF 4和CHF 3，CF 4与CHF 3的摩尔比为约0.5-0.8，F与Cl的摩尔比例如约为0.4-0.8。此外，进行蚀刻处理的步骤同时去除掩模层。

44. 发明申请

US20120309192A1 SEMICONDUCTOR PROCESS 有权
标题翻译：半导体工艺
公开(公告)号：US20120309192A1
公开(公告)日：2012-12-06
申请号：US13154427
申请日：2011-06-06
申请人： Wen-Chieh Wang , Yi-Nan Chen , Hsien-Wen Liu
发明人： Wen-Chieh Wang , Yi-Nan Chen , Hsien-Wen Liu
IPC分类号： H01L21/768
CPC分类号： H01L29/66621 , H01L21/26506 , H01L21/26513 , H01L27/10876
摘要： A semiconductor process is provided. A mask layer is formed on a substrate and has a first opening exposing a portion of the substrate. Using the mask layer as a mask, a dry etching process is performed on the substrate to form a second opening therein. The second opening has a bottom portion and a side wall extending upwards and outwards from the bottom portion, wherein the bottom portion is exposed by the first opening and the side wall is covered by the mask layer. Using the mask layer as a mask, a vertical ion implantation process is performed on the bottom portion. A conversion process is performed, so as to form converting layers on the side wall and the bottom portion of the second opening, wherein a thickness of the converting layer on the side wall is larger than a thickness of the converting layer on the bottom portion.
摘要翻译：提供半导体工艺。在衬底上形成掩模层，并具有暴露衬底的一部分的第一开口。使用掩模层作为掩模，在基板上进行干蚀刻处理，以在其中形成第二开口。第二开口具有底部和从底部向上并向外延伸的侧壁，其中底部由第一开口暴露，并且侧壁被掩模层覆盖。使用掩模层作为掩模，在底部进行垂直离子注入工艺。进行转换处理，以在第二开口的侧壁和底部形成转换层，其中侧壁上的转换层的厚度大于底部上的转换层的厚度。

45. 发明授权

US08309459B1 Semiconductor process 有权
标题翻译：半导体工艺
公开(公告)号：US08309459B1
公开(公告)日：2012-11-13
申请号：US13175882
申请日：2011-07-03
申请人： Wen-Chieh Wang , Yi-Nan Chen , Hsien-Wen Liu
发明人： Wen-Chieh Wang , Yi-Nan Chen , Hsien-Wen Liu
IPC分类号： H01L21/44
CPC分类号： H01L21/76897 , H01L29/78 , H01L2221/1063
摘要： A semiconductor process is provided. A substrate is provided in an etching apparatus, wherein first conductive patterns, a barrier layer and a patterned insulating layer are formed thereon. The first openings are formed between the first conductive patterns, the barrier layer covers surfaces of the first conductive patterns and the first openings, and the patterned insulating layer is formed on the first conductive patterns and has a plurality of second openings. The second openings expose the barrier layer on top corners of the first conductive patterns. Polymer layers are formed on the barrier layer, wherein a thickness of the polymer layer on the top corners of the first conductive pattern is larger than a thickness of the polymer layer on bottom portions of the first openings. An etching process is performed to remove the polymer layer and the barrier layer disposed on the bottom portions of the first openings.
摘要翻译：提供半导体工艺。在蚀刻装置中设置有基板，其中在其上形成第一导电图案，势垒层和图案化绝缘层。第一开口形成在第一导电图案之间，阻挡层覆盖第一导电图案和第一开口的表面，并且图案化绝缘层形成在第一导电图案上并且具有多个第二开口。第二开口暴露第一导电图案的顶角上的阻挡层。聚合物层形成在阻挡层上，其中第一导电图案的顶角上的聚合物层的厚度大于第一开口的底部上的聚合物层的厚度。执行蚀刻工艺以去除设置在第一开口的底部上的聚合物层和阻挡层。

46. 发明授权

US07035094B2 Support assembly for a portable computer 失效
标题翻译：用于便携式计算机的支持组件
公开(公告)号：US07035094B2
公开(公告)日：2006-04-25
申请号：US10791752
申请日：2004-03-04
申请人： Chao-Ming Huang , Wen-Chieh Wang , Chung-Gi Hsu
发明人： Chao-Ming Huang , Wen-Chieh Wang , Chung-Gi Hsu
IPC分类号： G06F1/16
CPC分类号： G06F1/1632 , G06F1/1626
摘要： An support assembly for a portable computer has a plurality of magnetic devices with opposite magnetic poles deposited separately on a backside of the portable computer and a back support board of the extending base. When the portable computer is placed in the extending base, the magnetic attraction force positions the portable computer into a containing groove of the extending base.
摘要翻译：用于便携式计算机的支撑组件具有多个磁性装置，其具有分别沉积在便携式计算机的背面上的相对磁极和延伸基座的后支撑板。当便携式计算机放置在延伸基座中时，磁吸力将便携式计算机定位在扩展基座的容纳槽中。

47. 发明授权

US06986492B2 Support structure of a portable keyboard 失效
标题翻译：支持便携式键盘的结构
公开(公告)号：US06986492B2
公开(公告)日：2006-01-17
申请号：US10778185
申请日：2004-02-17
申请人： Chao-Ming Huang , Wen-Chieh Wang , Kao-Wen Chang
发明人： Chao-Ming Huang , Wen-Chieh Wang , Kao-Wen Chang
IPC分类号： A47B91/00
CPC分类号： G06F1/1632 , G06F3/0202 , Y10S248/917 , Y10S248/918
摘要： A support structure of a portable keyboard includes two front support and a rear support. The front supports and the rear support can rotate to two predetermined angles respectively to form a confine within which a portable computer may be placed and supported. The rear support supports a backside of the portable computer, and the front supports push against a lower edge of the portable computer. Furthermore, both the front supports and the rear support can be closed onto an upper surface of the portable keyboard.
摘要翻译：便携式键盘的支撑结构包括两个前部支撑件和后部支撑件。前支撑件和后支撑件可以分别旋转到两个预定角度以形成限制，便携式计算机可以放置在其中并被支撑。后支撑件支撑便携式计算机的背面，并且前支撑件推靠便携式计算机的下边缘。此外，前支撑件和后支撑件都可以封闭在便携式键盘的上表面上。

48. 发明授权

US06985356B2 Rotatable display mounting structure 失效
标题翻译：可旋转显示安装结构
公开(公告)号：US06985356B2
公开(公告)日：2006-01-10
申请号：US10750768
申请日：2004-01-05
申请人： Wen-Chieh Wang
发明人： Wen-Chieh Wang
IPC分类号： G06F1/16
CPC分类号： G06F1/1637 , G06F1/162 , G06F1/1679 , Y10S248/92
摘要： A rotatable display mounting structure is disclosed to include a hollow frame, a display pivotally mounted inside the hollow frame, positioning structures provided at the display, positioning devices formed in the hollow frame and adapted to engage with the positioning structures and to hold the display in the hollow frame in position after rotation of the display in the hollow frame vertically (or horizontally). The positioning structures are respectively extended from the outer left side of the display to the outer right side of the display, and the positioning devices are respectively extended from the left-side frame bar of the hollow frame to the right-side frame bar of the hollow frame, so that the positioning structures and the positioning devices, when matched, form a shielding structure to stop light from passing through the gap between the display and the hollow frame.
摘要翻译：公开了一种可旋转的显示器安装结构，其包括中空框架，枢转地安装在中空框架内的显示器，设置在显示器处的定位结构，形成在中空框架中的定位装置，并且适于与定位结构接合并将显示器保持在垂直（或水平）在中空框架中旋转显示器后的空心框架。定位结构分别从显示器的左外侧延伸到显示器的右外侧，并且定位装置分别从中空框架的左侧框架杆延伸到右侧框架杆使得当匹配时，定位结构和定位装置形成屏蔽结构以阻止光通过显示器和中空框架之间的间隙。

49. 发明申请

US20050207110A1 Portable computer and docking station locking structure 失效
标题翻译：便携式电脑和坞站锁定结构
公开(公告)号：US20050207110A1
公开(公告)日：2005-09-22
申请号：US10750770
申请日：2004-01-05
申请人： Wen-Chieh Wang , Chao-Ming Huang
发明人： Wen-Chieh Wang , Chao-Ming Huang
IPC分类号： E05B73/00 , G06F1/16 , H05K5/02
CPC分类号： G06F1/1632 , E05B73/0082 , G06F1/1626 , Y10S248/918 , Y10T70/5934
摘要： A portable computer and docking station locking structure in which the docking station has a lock provided inside the support arm thereof controlled by a key or the like, and the portable computer has a lock hole in the back side adapted to receive the swivel locking member of the lock for enabling the portable computer to be locked to the docking station after setting of the portable computer in the support arm of the docking station.
摘要翻译：一种便携式计算机和坞站锁定结构，其中对接站具有设置在其支撑臂内部的由键或类似物控制的锁，并且便携式计算机在后侧具有适于接收旋转锁定构件的旋转锁定构件的锁定孔在将便携式计算机设置在对接站的支撑臂中之后，使便携式计算机能够锁定到坞站的锁定。

50. 发明授权

US08622564B2 Portable electronic device with interface 失效
标题翻译：带接口的便携式电子设备
公开(公告)号：US08622564B2
公开(公告)日：2014-01-07
申请号：US13268177
申请日：2011-10-07
申请人： Sheng-Tien Chang , Wen-Chieh Wang
发明人： Sheng-Tien Chang , Wen-Chieh Wang
IPC分类号： F21V33/00
CPC分类号： H01R13/7172 , H01R13/74
摘要： An interface assembly includes a connector housing and a light emitting element. The connector housing defines a opening. The light emitting element is retained to the connector housing and illuminates the opening.
摘要翻译：接口组件包括连接器外壳和发光元件。连接器壳体限定开口。发光元件被保持到连接器壳体并照亮开口。

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