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41. 发明授权

US07015527B2 Metal oxynitride capacitor barrier layer 失效
公开(公告)号：US07015527B2
公开(公告)日：2006-03-21
申请号：US10688678
申请日：2003-10-17
申请人： Sam Yang , Vishnu K. Agarwal
发明人： Sam Yang , Vishnu K. Agarwal
IPC分类号： H01L27/08
CPC分类号： H01L28/56 , H01L27/10852 , H01L28/75
摘要： Capacitor structures for use in integrated circuits and methods of their manufacture. The capacitor structures include a bottom electrode, a top electrode and a dielectric layer interposed between the bottom electrode and the top electrode. The capacitor structures further include a metal oxynitride barrier layer interposed between the dielectric layer and at least one of the bottom and top electrodes. Each metal oxynitride barrier layer acts to reduce undesirable oxidation of its associated electrode. Each metal oxynitride barrier layer can further aid in the repairing of oxygen vacancies in a metal oxide dielectric. The capacitors are suited for use as memory cells and apparatus incorporating such memory cells, as well as other integrated circuits.

42. 发明授权

US06931882B1 Dual function condensate drain trap for negative or positive pressure air handling unit 有权
标题翻译：用于负压或正压空气处理单元的双功能冷凝水排水阱
公开(公告)号：US06931882B1
公开(公告)日：2005-08-23
申请号：US10860023
申请日：2004-06-04
申请人： Sam Yang
发明人： Sam Yang
IPC分类号： F16T1/22 , F24F13/22 , F25D21/14
CPC分类号： F16T1/22 , F24F13/222
摘要： A dual function condensate drain trap for positive or negative pressure air handling unit applicable in positive or negative pressure environments by switching connecting directions includes a drain trap which has a water inlet and a water outlet on two sides to connect to a drain pipe, and a valve seat and a retaining element located on the valve seat movable between a first position to be in contact with the valve seat and a second position to be away from the valve seat. When the pressure of water column in the water inlet is smaller than that of the water outlet, the retaining element is on the first position to form an air lock to prevent air from entering or escaping from air handling unit. By contrast, when the pressure of water column in the water inlet is greater than that of the water outlet, the retaining element is moved to the first position to drain water.
摘要翻译：用于通过切换连接方向在正或负压环境中适用的正压或负压空气处理单元的双功能冷凝水排放阱包括：排水阱，其具有两侧的进水口和出水口以连接到排水管，阀座和位于阀座上的保持元件可在与阀座接触的第一位置和远离阀座的第二位置之间移动。当入水口的水柱压力小于出水口的压力时，保持件处于第一位置，形成一个空气锁，以防止空气从空气处理单元进入或逃逸。相比之下，当入水口的水柱压力大于出水口的压力时，保持元件移动到第一位置以排出水。

43. 发明授权

US06803621B2 Oxygen barrier for cell container process 失效
标题翻译：细胞容器过程的氧气屏障
公开(公告)号：US06803621B2
公开(公告)日：2004-10-12
申请号：US10286155
申请日：2002-10-31
申请人： Sam Yang , Lingyi A. Zheng
发明人： Sam Yang , Lingyi A. Zheng
IPC分类号： H01L27108
CPC分类号： H01L28/84 , H01L21/32105 , H01L28/90
摘要： A memory cell container of a DRAM semiconductor memory device and method for manufacturing the cell container are provided. The cell includes a container formed in a structural layer such as borophosphosilicate glass. The container is then lined with a polysilicon such as hemispherical grained polysilicon. A dielectric layer is deposited over the polysilicon layer. A barrier layer is deposited over the dielectric layer such that the opening of the container is covered but not the sidewalls or the bottom of the container. The cell is then oxidized and the barrier layer provides protection as an oxygen barrier during the oxidation or any following reoxidation process.
摘要翻译：提供DRAM半导体存储器件的存储单元容器和用于制造单元容器的方法。电池包括形成在诸如硼磷硅酸盐玻璃的结构层中的容器。然后将容器内衬多晶硅，例如半球形多晶硅。介电层沉积在多晶硅层上。阻挡层沉积在电介质层上，使得容器的开口被覆盖而不是容器的侧壁或底部。然后将电池氧化，并且阻隔层在氧化或任何后续再氧化过程中提供作为氧阻隔的保护。

44. 发明授权

US06746930B2 Oxygen barrier for cell container process 失效
标题翻译：细胞容器过程的氧气屏障
公开(公告)号：US06746930B2
公开(公告)日：2004-06-08
申请号：US09902997
申请日：2001-07-11
申请人： Sam Yang , Lingyi A. Zheng
发明人： Sam Yang , Lingyi A. Zheng
IPC分类号： H01L2120
CPC分类号： H01L28/84 , H01L21/32105 , H01L28/90
摘要： A memory cell container of a DRAM semiconductor memory device and method for manufacturing the cell container are disclosed. The cell includes a container formed in a structural layer such as borophosphosilicate glass. The container is then lined with a polysilicon such as hemispherical grained polysilicon. A dielectric layer is deposited over the polysilicon layer. A barrier layer is deposited over the dielectric layer such that the opening of the container is covered but not the sidewalls or the bottom of the container. The cell is then oxidized and the barrier layer provides protection as an oxygen barrier during the oxidation or any following re-oxidation process.
摘要翻译：公开了DRAM半导体存储器件的存储单元容器及其制造方法。电池包括形成在诸如硼磷硅酸盐玻璃的结构层中的容器。然后将容器内衬多晶硅，例如半球形多晶硅。介电层沉积在多晶硅层上。阻挡层沉积在电介质层上，使得容器的开口被覆盖而不是容器的侧壁或底部。然后，电池被氧化，并且阻隔层在氧化或任何后续的再氧化过程中提供作为氧阻隔的保护。

45. 发明授权

US06664584B2 Metal oxynitride capacitor barrier layer 有权
公开(公告)号：US06664584B2
公开(公告)日：2003-12-16
申请号：US09999281
申请日：2001-11-30
申请人： Sam Yang , Vishnu K. Agrawal
发明人： Sam Yang , Vishnu K. Agrawal
IPC分类号： H01L27108
CPC分类号： H01L28/56 , H01L27/10852 , H01L28/75
摘要： Capacitor structures for use in integrated circuits and methods of their manufacture. The capacitor structures include a bottom electrode, a top electrode and a dielectric layer interposed between the bottom electrode and the top electrode. The capacitor structures further include a metal oxynitride barrier layer interposed between the dielectric layer and at least one of the bottom and top electrodes. Each metal oxynitride barrier layer acts to reduce undesirable oxidation of its associated electrode. Each metal oxynitride barrier layer can further aid in the repairing of oxygen vacancies in a metal oxide dielectric. The capacitors are suited for use as memory cells and apparatus incorporating such memory cells, as well as other integrated circuits.

46. 发明授权

US06617248B1 Method for forming a ruthenium metal layer 失效
标题翻译：钌金属层的形成方法
公开(公告)号：US06617248B1
公开(公告)日：2003-09-09
申请号：US09710626
申请日：2000-11-10
申请人： Sam Yang
发明人： Sam Yang
IPC分类号： H01L2144
CPC分类号： H01L29/495 , C23C16/40 , C23C16/56 , H01L21/28556 , H01L27/108 , H01L27/10814 , H01L27/10855 , H01L27/10888 , H01L28/65 , H01L28/90
摘要： A method for forming a ruthenium metal layer comprises combining a ruthenium precursor with a measured amount of oxygen to form a ruthenium oxide layer. The ruthenium oxide is annealed in the presence of a hydrogen-rich gas to react the oxygen in the ruthenium oxide with hydrogen, which results in a ruthenium metal layer. By varying the oxygen flow rate during the formation of ruthenium oxide, a ruthenium metal layer having various degrees of smooth and rough textures can be formed.
摘要翻译：形成钌金属层的方法包括将钌前体与测量量的氧组合以形成氧化钌层。氧化钌在富氢气体的存在下进行退火，以使氧化钌中的氧与氢反应，这导致钌金属层。通过改变形成氧化钌期间的氧气流速，可以形成具有不同程度的光滑粗糙纹理的钌金属层。

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