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41. 发明授权

US06773863B2 Positive-working chemical-amplification photoresist composition 有权
标题翻译：正性化学增幅光刻胶组合物
公开(公告)号：US06773863B2
公开(公告)日：2004-08-10
申请号：US10369748
申请日：2003-02-21
申请人： Katsumi Oomori , Hiroto Yukawa , Ryusuke Uchida , Kazufumi Sato
发明人： Katsumi Oomori , Hiroto Yukawa , Ryusuke Uchida , Kazufumi Sato
IPC分类号： G03C173
CPC分类号： G03F7/0392 , G03F7/0045 , Y10S430/106 , Y10S430/11 , Y10S430/111 , Y10S430/115 , Y10S430/122 , Y10S430/126
摘要： Disclosed is a novel positive-working chemical-amplification photoresist composition capable of giving an extremely finely patterned resist layer in the manufacturing process of semiconductor devices. The photoresist composition comprises: (A) 100 parts by weight of a copolymeric resin consisting of from 50 to 85% by moles of (a) hydroxyl group-containing styrene units, from 15 to 35% by moles of (b) styrene units and from 2 to 20% by moles of (c) acrylate or methacrylate ester units each having a solubility-reducing group capable of being eliminated in the presence of an acid; and (B) from 1 to 20 parts by weight of a radiation-sensitive acid-generating agent which is an onium salt containing a fluoroalkyl sulfonate ion having 3 to 10 carbon atoms as the anion such as bis(4-tert-butylphenyl) iodonium nonafluorobutane sulfonate.
摘要翻译：公开了一种能够在半导体器件的制造过程中给出非常精细图案化的抗蚀剂层的新颖的正性化学扩增光致抗蚀剂组合物。光致抗蚀剂组合物包括：（A）100重量份由50-85摩尔％（a）含羟基的苯乙烯单元，15-35摩尔％的（b）苯乙烯单元组成的共聚树脂和 2〜20摩尔％的（c）丙烯酸酯或甲基丙烯酸酯单元，其各自具有可在酸存在下消除的溶解性降低基团; 和（B）1〜20重量份的辐射敏感性酸产生剂，其是含有具有3至10个碳原子的氟代烷基磺酸根离子作为阴离子的鎓盐，例如双（4-叔丁基苯基）碘鎓九氟丁烷磺酸盐。

42. 发明授权

US06387587B1 Positive-working chemical-amplification photoresist composition 有权
公开(公告)号：US06387587B1
公开(公告)日：2002-05-14
申请号：US09291116
申请日：1999-04-14
申请人： Katsumi Oomori , Hiroto Yukawa , Ryusuke Uchida , Kazufumi Sato
发明人： Katsumi Oomori , Hiroto Yukawa , Ryusuke Uchida , Kazufumi Sato
IPC分类号： G03C173
CPC分类号： G03F7/0392 , G03F7/0045 , Y10S430/106 , Y10S430/11 , Y10S430/111 , Y10S430/115 , Y10S430/122 , Y10S430/126
摘要： Disclosed is a novel positive-working chemical-amplification photoresist composition capable of giving an extremely finely patterned resist layer in the manufacturing process of semiconductor devices. The photoresist composition comprises: (A) 100 parts by weight of a copolymeric resin consisting of from 50 to 85% by moles of (a) hydroxyl group-containing styrene units, from 15 to 35% by moles of (b) styrene units and from 2 to 20% by moles of (c) acrylate or methacrylate ester units each having a solubility-reducing group capable of being eliminated in the presence of an acid; and (B) from 1 to 20 parts by weight of a radiation-sensitive acid-generating agent which is an onium salt containing a fluoroalkyl sulfonate ion having 3 to 10 carbon atoms as the anion such as bis(4-tert-butylphenyl) iodonium nonafluorobutane sulfonate.

43. 发明授权

US6077644A Positive-working resist composition 失效
标题翻译：正面抗蚀剂组成
公开(公告)号：US6077644A
公开(公告)日：2000-06-20
申请号：US207202
申请日：1998-12-08
申请人： Hideo Hada , Kazufumi Sato , Hiroshi Komano , Toshimasa Nakayama
发明人： Hideo Hada , Kazufumi Sato , Hiroshi Komano , Toshimasa Nakayama
IPC分类号： C07C69/013 , G03F7/004 , G03F7/039
CPC分类号： C07C69/013 , G03F7/0045 , G03F7/039 , Y10S430/115 , Y10S430/122
摘要： Proposed is a novel chemical-sensitization positive-working photoresist composition used in the photolithographic patterning process for the manufacture of fine electronic devices, which is capable of giving, with high photosensitivity to ArF excimer laser beams, a patterned resist layer having an excellently orthogonal cross sectional profile and high resistance against dry etching and exhibiting good adhesion to the substrate surface. While the composition comprises (A) a film-forming resinous ingredient which undergoes an increase of alkali solubility by interacting with an acid and (B) a radiation-sensitive acid-generating agent, the most characteristic feature of the invention consists in the use of a specific acrylic resin as the component (A), which comprises the monomeric units of a (meth)acrylic acid ester of hydroxy bicyclo[3.1.1]heptanone unsubstituted or substituted by an alkyl group such as hydroxypinanone (meth)acrylate, optionally, in combination with the monomeric units derived from (meth)acrylic acid and/or tert-butyl (meth)acrylate in a molar fraction of 3:7 to 7:3.
摘要翻译：提出了用于制造精细电子器件的光刻图案化工艺中的新型化学增感正性光致抗蚀剂组合物，其能够赋予ArF准分子激光束具有高光敏性的具有良好正交交叉的图案化抗蚀剂层截面轮廓和高抗干蚀刻性，并且对基材表面具有良好的粘合性。虽然组合物包含（A）通过与酸相互作用而增加碱溶解度的成膜树脂成分和（B）辐射敏感的酸产生剂，但是本发明的最特征在于使用作为组分（A）的特定丙烯酸树脂，其包含未被取代或被烷基如羟基酮（甲基）丙烯酸酯取代的羟基双环[3.1.1]庚酮的（甲基）丙烯酸酯的单体单元，与来自（甲基）丙烯酸和/或（甲基）丙烯酸叔丁酯的单体单元组合，摩尔分数为3:7至7:3。

44. 发明申请

US20080227027A1 Method for forming photoresist pattern and photoresist laminate 审中-公开
标题翻译：形成光致抗蚀剂图案和光致抗蚀剂层压板的方法
公开(公告)号：US20080227027A1
公开(公告)日：2008-09-18
申请号：US12081463
申请日：2008-04-16
申请人： Akiyoshi Yamazaki , Naoto Motoike , Daisuke Kawana , Kazufumi Sato
发明人： Akiyoshi Yamazaki , Naoto Motoike , Daisuke Kawana , Kazufumi Sato
IPC分类号： G03F7/004 , G03F7/20
CPC分类号： G03F7/0392 , G03F7/0045 , G03F7/091
摘要： A method for forming a photoresist pattern involves the steps of: depositing a photoresist film on a substrate, the photoresist film containing an acid-generating agent capable of generating an acid upon exposure to light; overlaying an antireflective film over the photoresist film, the antireflective film containing a fluorine-based acidic compound; selectively exposing the photoresist; and developing the photoresist. The novel method is characterized in that the acid-generating agent and the fluorine-based acidic compound are selected so that the acid that the acid-generating agent generates in the photoresist film upon exposure to light has a higher acidity than the fluorine-based acidic compound in the antireflective film.
摘要翻译：用于形成光致抗蚀剂图案的方法包括以下步骤：在基底上沉积光致抗蚀剂膜，光致抗蚀剂膜含有能够在暴露于光时产生酸的酸产生剂; 在抗蚀剂膜上覆盖抗反射膜，所述抗反射膜含有氟基酸性化合物; 选择性地曝光光致抗蚀剂; 并显影光致抗蚀剂。该新方法的特征在于，选择酸产生剂和氟基酸性化合物，使得在曝光后光致抗蚀剂膜中产生酸的酸具有比氟酸酸性更高的酸度化合物在抗反射膜中。

45. 发明申请

US20070009828A1 Positive resist composition, resist laminates and process for forming resist patterns 审中-公开
标题翻译：正抗蚀剂组合物，抗蚀剂层压体和形成抗蚀剂图案的方法
公开(公告)号：US20070009828A1
公开(公告)日：2007-01-11
申请号：US10560126
申请日：2004-06-11
申请人： Koki Tamura , Daisuke Kawana , Tomotaka Yamada , Takayuki Hosono , Taku Hirayama , Kazufumi Sato , Hiroshi Shimbori , Tomoyuki Ando
发明人： Koki Tamura , Daisuke Kawana , Tomotaka Yamada , Takayuki Hosono , Taku Hirayama , Kazufumi Sato , Hiroshi Shimbori , Tomoyuki Ando
IPC分类号： G03C1/00
CPC分类号： G03F7/0757 , G03F7/0045
摘要： A positive resist composition, comprising a resin component (A) that exhibits increased alkali solubility under the action of acid, and an acid generator component (B) that generates acid on exposure, wherein the component (A) includes either a silsesquioxane resin (A1) containing structural units (a1) represented by a general formula (I) shown below, structural units (a2) represented by a general formula (II) shown below, and structural units (a3) represented by a general formula (III) shown below, or a silsesquioxane resin (A2) containing structural units (al) represented by the general formula (I) shown below, and structural units (a2′) represented by a general formula (II′) shown below. In the general formulas below, R1 represents a straight-chain or branched alkylene group of 1 to 5 carbon atoms, R2 represents a straight-chain or branched alkylene group of 1 to 5 carbon atoms, R3 represents an acid dissociable, dissolution inhibiting group, R6 represents an alkyl group of 1 to 5 carbon atoms, R7 represents either an alkyl group of 1 to 5 carbon atoms or a hydrogen atom, and R8 represents an alicyclic hydrocarbon group of 5 to 15 carbon atoms.
摘要翻译：含有在酸作用下表现出增加的碱溶性的树脂组分（A）的阳性抗蚀剂组合物和暴露时产生酸的酸产生剂组分（B），其中组分（A）包括倍半硅氧烷树脂（A1）），由下述通式（I）表示的结构单元（a1），由下述通式（II）表示的结构单元（a2）和由以下所示的通式（III）表示的结构单元（a3），或含有下述通式（I）表示的结构单元（a1）的倍半硅氧烷树脂（A2）和由下述通式（II'）表示的结构单元（a2'）。在下列通式中，R 1表示1至5个碳原子的直链或支链亚烷基，R 2表示直链或支链的亚烷基， 1至5个碳原子，R 3表示酸解离的溶解抑制基团，R 6表示1至5个碳原子的烷基，R 7， / SUP>表示1〜5个碳原子的烷基或氢原子，R 8表示5〜15个碳原子的脂环族烃基。

46. 发明申请

US20060021964A1 Composition for forming antireflection coating 审中-公开
标题翻译：用于形成抗反射涂层的组合物
公开(公告)号：US20060021964A1
公开(公告)日：2006-02-02
申请号：US11237913
申请日：2005-09-29
申请人： Taku Hirayama , Tomotaka Yamada , Daisuke Kawana , Kouki Tamura , Kazufumi Sato
发明人： Taku Hirayama , Tomotaka Yamada , Daisuke Kawana , Kouki Tamura , Kazufumi Sato
IPC分类号： H01B13/00
CPC分类号： C08G77/14 , C08G77/04 , C08G77/70 , C09D5/32 , C09D183/04 , C09D183/06 , G02B1/111 , G03F7/0757 , G03F7/091 , C08L2666/04
摘要： A composition for forming an antireflection coating, characterized in that it comprises an organic solvent and, dissolved therein, (A) a ladder silicone copolymer containing (a1) 10 to 90 mole % of a (hydroxyphenylalkyl)silsesquioxane unit, (a2) 0 to 50 mole % of a (alkoxyphenylalkyl)silsesquioxane unit and (a3) 10 to 90 mole % of an alkyl or phenylsilsesquioxane unit, (B) an acid generator generating an acid upon exposure to heat or light, and (C) a crosslinking agent, and is capable of forming an antireflection coating exhibiting an optional parameter (k value) for an ArF laser of the range of 0.002 to 0.95. The composition is soluble in an organic solvent, can be applied by a conventional spin coating method with ease, has good storage stability, and can exhibit an adjusted preventive capability for reflection through the introduction of a chromophoric group absorbing a radiation ray thereto.
摘要翻译：一种用于形成抗反射涂层的组合物，其特征在于，其包含有机溶剂，并且溶解于其中（A）含有（〜1/10）10〜90摩尔％的（羟基苯基烷基）倍半硅氧烷单元，（a 2 O 2）0〜50摩尔％的（烷氧基苯基烷基）倍半硅氧烷单元和（〜3）10〜90摩尔％的烷基或苯基倍半硅氧烷单元，（B）在暴露于热或光时产生酸的酸发生剂，和（C）交联剂，并且能够形成对于0.002至约0.002的范围的ArF激光显示可选参数（k值）的抗反射涂层 0.95。该组合物可溶于有机溶剂，可以通过常规的旋涂法容易地进行涂布，具有良好的储存稳定性，并且通过引入吸收辐射线的发色团，可以显示调整的防止反射能力。

47. 发明申请

US20060003252A1 Chemical amplification type silicone based positive photoresist composition 审中-公开
标题翻译：化学放大型硅胶正性光致抗蚀剂组合物
公开(公告)号：US20060003252A1
公开(公告)日：2006-01-05
申请号：US10537290
申请日：2003-12-01
申请人： Taku Hirayama , Tomotaka Yamada , Daisuke Kawana , Kouki Tamura , Kazufumi Sato
发明人： Taku Hirayama , Tomotaka Yamada , Daisuke Kawana , Kouki Tamura , Kazufumi Sato
IPC分类号： G03F7/021
CPC分类号： G03F7/0757 , C08G77/04 , C08L83/06 , G03F7/0045
摘要： A chemical-amplification type silicone-based positive-working resist composition that can be prepared from compounds of good availability as the base materials through simple means and can provide a bilayer resist material from which a fine pattern of high resolution, high aspect ratio, desirable cross-sectional profile and low line edge roughness can be formed. In particular, a chemical-amplification type positive-working resist composition comprising an alkali soluble resin (A) and a photoacid generator (B) wherein a ladder-type silicone copolymer comprising (hydroxyphenylalkyl)silsesquioxane units (a1), (alkoxyphenylalkyl)silsesquioxane units (a2) and alkyl- or phenylsilsesquioxane units (a3) is used as the alkali soluble resin (A). The copolymer wherein, in the component (A), the units (a3) are phenylsilsesquioxane units is a novel compound.
摘要翻译：一种化学扩增型硅氧烷正性抗蚀剂组合物，其可以通过简单的方法由具有良好可用性的化合物制备，并且可以提供双层抗蚀剂材料，由此可以获得高分辨率，高纵横比的精细图案可以形成横截面轮廓和低线边缘粗糙度。特别是包含碱溶性树脂（A）和光酸产生剂（B）的化学增幅型正性抗蚀剂组合物，其中包含（羟基苯基烷基）倍半硅氧烷单元（a 1 SUB / >），（烷氧基苯基烷基）倍半硅氧烷单元（a 2 N 2）和烷基 - 或苯基倍半硅氧烷单元（a 3 SUB）用作碱溶性树脂（A）。在组分（A）中，单元（a 3 SUB）是苯基倍半硅氧烷单元的共聚物是新的化合物。

48. 发明申请

US20050282090A1 Composition for forming antireflection coating 审中-公开
标题翻译：用于形成抗反射涂层的组合物
公开(公告)号：US20050282090A1
公开(公告)日：2005-12-22
申请号：US10537152
申请日：2003-12-01
申请人： Kawasaki-shi Hirayama , Tomotaka Yamada , Daisuke Kawana , Kazufumi Sato
发明人： Kawasaki-shi Hirayama , Tomotaka Yamada , Daisuke Kawana , Kazufumi Sato
IPC分类号： G03F7/075 , G03F7/09 , G03C5/00
CPC分类号： C08G77/14 , C08G77/04 , C08G77/70 , C09D5/32 , C09D183/04 , C09D183/06 , G02B1/111 , G03F7/0757 , G03F7/091 , C08L2666/04
摘要： A composition for forming an antireflection coating, characterized in that it comprises an organic solvent and, dissolved therein, (A) a ladder silicone copolymer containing (a1) 10 to 90 mole % of a (hydroxyphenylalkyl)silses-quioxane unit, (a2) 0 to 50 mole % of a (alkoxyphenylalkyl)silsesquioxane unit and (a3) 10 to 90 mole % of an alkyl or phenylsilsesquioxane unit, (B) an acid generator generating an acid upon exposure to heat or light, and (C) a crosslinking agent, and is capable of forming an antireflection coating exhibiting an optional parameter (k value) for an ArF laser of the range of 0.002 to 0.95. The composition is soluble in an organic solvent, can be applied by a conventional spin coating method with ease, has good storage stability, and can exhibit an adjusted preventive capability for reflection through the introduction of a chromophoric group absorbing a radiation ray thereto.
摘要翻译：一种用于形成抗反射涂层的组合物，其特征在于，其包含有机溶剂，并且溶解于其中（A）含有（〜1/10）10〜90摩尔％的（羟基苯基烷基）硅烷 - 二氧杂环己烷单元，（a 2 O 2）0〜50摩尔％的（烷氧基苯基烷基）倍半硅氧烷单元和（〜3）10〜90摩尔％的烷基或苯基倍半硅氧烷单元，（B）在暴露于热或光时产生酸的酸发生剂，和（C）交联剂，并且能够形成对于ArF激光的范围的表现出可选参数（k值）的抗反射涂层 0.002〜0.95。该组合物可溶于有机溶剂，可以通过常规的旋涂法容易地进行涂布，具有良好的储存稳定性，并且通过引入吸收辐射线的发色团，可以显示调整的防止反射能力。

49. 发明授权

US06815144B2 Positive-working chemical-amplification photoresist composition 有权
标题翻译：正性化学增幅光刻胶组合物
公开(公告)号：US06815144B2
公开(公告)日：2004-11-09
申请号：US10059236
申请日：2002-01-31
申请人： Katsumi Oomori , Hiroto Yukawa , Ryusuke Uchida , Kazufumi Sato
发明人： Katsumi Oomori , Hiroto Yukawa , Ryusuke Uchida , Kazufumi Sato
IPC分类号： G03C173
CPC分类号： G03F7/0045 , G03F7/0392 , Y10S430/106 , Y10S430/111 , Y10S430/115 , Y10S430/122 , Y10S430/126
摘要： Disclosed is a novel positive-working chemical-amplification photoresist composition capable of giving an extremely finely patterned resist layer in the manufacturing process of semiconductor devices. The photoresist composition comprises: (A) 100 parts by weight of a copolymeric resin consisting of from 50 to 85% by moles of (a) hydroxyl group-containing styrene units, from 15 to 35% by moles of (b) styrene units and from 2 to 20% by moles of (c) acrylate or methacrylate ester units each having a solubility-reducing group capable of being eliminated in the presence of an acid; and (B) from 1 to 20 parts by weight of a radiation-sensitive acid-generating agent which is an iodonium salt containing a fluoroalkyl sulfonate ion having 3 to 10 carbon atoms as the anion such as bis(4-tert-butylphenyl) iodonium nonafluorobutane sulfonate.
摘要翻译：公开了一种能够在半导体器件的制造过程中给出非常精细图案化的抗蚀剂层的新颖的正性化学扩增光致抗蚀剂组合物。光致抗蚀剂组合物包括：（A）100重量份由50-85摩尔％（a）含羟基的苯乙烯单元，15-35摩尔％的（b）苯乙烯单元组成的共聚树脂和 2〜20摩尔％的（c）丙烯酸酯或甲基丙烯酸酯单元，其各自具有可在酸存在下消除的溶解性降低基团; 和（B）1〜20重量份的辐射敏感性酸产生剂，其是含有具有3至10个碳原子的氟烷基磺酸根离子作为阴离子的碘鎓盐，例如双（4-叔丁基苯基）碘鎓九氟丁烷磺酸盐。

50. 发明授权

US06388101B1 Chemical-sensitization photoresist composition 有权
标题翻译：化学增感光刻胶组合物
公开(公告)号：US06388101B1
公开(公告)日：2002-05-14
申请号：US09562458
申请日：2000-05-02
申请人： Hideo Hada , Kazufumi Sato , Hiroshi Komano
发明人： Hideo Hada , Kazufumi Sato , Hiroshi Komano
IPC分类号： C07D30512
CPC分类号： C07D307/33 , G03F7/0392 , Y02P20/55
摘要： Proposed is a chemical-sensitization positive-working photoresist composition for photolithographic patterning in the manufacture of semiconductor devices having high transparency even to ultraviolet light of very short wavelength such as ArF excimer laser beams of 193 nm wavelength to exhibit high photosensitivity and capable of giving a patterned resist layer with high pattern resolution. The composition comprises (A) a resinous ingredient which is subject to an increase of the solubility in an aqueous alkaline developer solution in the presence of an acid and (B) a radiation-sensitive acid-generating compound. Characteristically, the resinous ingredient as the component (A) is a (meth)acrylic copolymer of which from 20% to 80% by moles of the monomeric units are derived from a (meth)acrylic acid ester of which the ester-forming group has a specific oxygen-containing heterocyclic ring structure.
摘要翻译：提出了一种用于制造半导体器件的化学增感正性光致抗蚀剂组合物，即使对于非常短波长的紫外光也具有高透明度，例如193nm波长的ArF准分子激光束，以显示高光敏性，并且能够给出具有高图案分辨率的图案化抗蚀剂层。组合物包含（A）在酸的存在下在碱性显影剂水溶液中溶解度增加的树脂成分和（B）辐射敏感的产酸化合物。特征在于，作为（A）成分的树脂成分是（甲基）丙烯酸系共聚物，20〜80摩尔％的单体单元衍生自成酯基的（甲基）丙烯酸酯特定的含氧杂环结构。

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