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    • 46. 发明授权
    • Information recording medium rewritable by utilizing two metastable
phases of a recording layer and method using the same
    • 通过利用记录层的两个亚稳定相可重写的信息记录介质及使用其的方法
    • US4839861A
    • 1989-06-13
    • US012074
    • 1987-02-06
    • Sumio IkegawaShuichi KomatsuShinji AraiSumio AshidaNobuaki Yasuda
    • Sumio IkegawaShuichi KomatsuShinji AraiSumio AshidaNobuaki Yasuda
    • G11B7/00B41M5/26G11B7/0055G11B7/243G11B7/30
    • G11B7/257G11B7/00557G11B7/243G11B2007/24308G11B2007/24312G11B2007/2571G11B2007/25713G11B7/252G11B7/2531G11B7/2533G11B7/254
    • A rewritable information recording medium which has a recording layer containing a Group I transition element and a Group IV representative elements of the Periodic Table as two principal element and a support substrate for physically supporting the recording layer, and an information-write, -read, and erase method using this recording medium. When the recording layer is immediately cooled after it is heated up to near a eutectic temperature of the two principal elements, two metastable phases having different energy levels appear. A state in the first metastable phase of the higher energy level has a reflectivity sufficiently higher than that of a state of a mixed phase including the second metastable phase of the lower energy level, or that of the equilibrium state. The state in the first metastable phase can be obtained by heating a recording layer in another state by light beam irradiation. A portion in the first metastable state is cooled after it is heated to a temperature lower than that for obtaining the first metastable phase, so that it can be converted to a state of the low reflectivity, i.e., a state of a mixed phase including the second metastable phase or to the equilibrium state.
    • 一种可重写信息记录介质,其具有包含作为两个主要元件的元素周期表的第I族过渡元素和IV族代表元素的记录层和用于物理支撑记录层的支撑基板,以及信息写入的读取记录介质, 和使用该记录介质的擦除方法。 当记录层在被加热到两个主要元素的共晶温度附近之后立即冷却时,出现具有不同能级的两个亚稳相。 较高能量级的第一亚稳态中的状态具有足够高于包括较低能量级的第二亚稳态或平衡态的混合相的状态的反射率的反射率。 可以通过光束照射在另一状态下加热记录层来获得第一亚稳相中的状态。 第一亚稳态中的一部分在被加热到低于用于获得第一亚稳相的温度以下的温度下被冷却,使得其可以转化为低反射率的状态,即包括 第二亚稳态或平衡态。
    • 47. 发明申请
    • OPTICAL RECORDING SYSTEM TO RECORD INFORMATION WITH LIGHT
    • 用光记录信息的光记录系统
    • US20100124160A1
    • 2010-05-20
    • US12616214
    • 2009-11-11
    • Yuuzo KAMIGUCHISumio Ashida
    • Yuuzo KAMIGUCHISumio Ashida
    • G11B7/00
    • G11B7/1374B82Y10/00G11B7/127G11B7/1387G11B7/24038
    • A multilayer optical recording system to record information with light includes a lens unit, a recording medium, and a microscopic drive unit. The lens unit includes a metamaterial lens or a plasmon lens. The metamaterial lens has a first dielectric member in which first microstructures are implanted in a substantially regular manner. The plasmon lens has an aperture. The aperture is a hole or a slit created in a metal film. The microscopic drive unit is configured to adjust a relative position between the lens unit and the recording medium. In addition, the principal plane is placed to be in contact with the lens unit or to have a gap between the principal plane and the lens unit. Furthermore, the second microstructures are arranged periodically in a direction substantially perpendicular to the principal plane of the recording medium.
    • 用光记录信息的多层光学记录系统包括透镜单元,记录介质和微型驱动单元。 透镜单元包括超材料透镜或等离子体透镜。 超材料透镜具有以基本上规则的方式植入第一微结构的第一电介质构件。 等离子体透镜具有孔径。 孔是在金属膜中产生的孔或狭缝。 微型驱动单元被配置为调整透镜单元和记录介质之间的相对位置。 此外,主平面被放置成与透镜单元接触或者在主平面和透镜单元之间具有间隙。 此外,第二微结构周期性地布置在基本上垂直于记录介质的主平面的方向上。
    • 48. 发明申请
    • PHASE CHANGE MEMORY AND MANUFACTURING METHOD THEREOF
    • 相变记忆及其制造方法
    • US20080293183A1
    • 2008-11-27
    • US12184428
    • 2008-08-01
    • Takayuki TSUKAMOTOKatsuyuki NaitoSumio Ashida
    • Takayuki TSUKAMOTOKatsuyuki NaitoSumio Ashida
    • H01L45/00
    • H01L45/06H01L45/1233H01L45/126H01L45/1273H01L45/144H01L45/16Y10S438/90
    • Even if sizes of storage cells are reduced in a phase change memory, properties of the respective storage cells can be set to be approximately equal to one another and a current amount required for phase change can be reduced sufficiently. The phase change memory includes at least a storage cell. The storage cell includes a first electrode, an electrically conductive portion provided on the first electrode and having at least two electrically conductive bodies with approximately the same shape provided on the first electrode, the electrically conductive bodies being spaced by a high resistance film with a high resistance, a recording layer provided on the electrically conductive portion and having phase change material which can change between a first phase state with a first specific resistance and a second phase state with a second specific resistance different from the first specific resistance, and a second electrode provided on the recording layer.
    • 即使存储单元的尺寸在相变存储器中减少,各个存储单元的特性可以被设置为大致相等,并且可以充分地减少相变所需的电流量。 相变存储器至少包括存储单元。 存储单元包括第一电极,设置在第一电极上的导电部分,并且具有至少两个导电体,其具有设置在第一电极上的大致相同的形状,导电体由高电阻膜隔开,高电阻 电阻,设置在导电部分上并具有能够在具有第一电阻率的第一相位状态与第二相位状态之间变化的相变材料的记录层,其具有不同于第一电阻率的第二电阻率;以及第二电极 提供在记录层上。