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41. 发明申请

US20110049522A1 SEMICONDUCTOR DISPLAY DEVICE 有权
标题翻译：半导体显示设备
公开(公告)号：US20110049522A1
公开(公告)日：2011-03-03
申请号：US12711611
申请日：2010-02-24
申请人： Shunpei YAMAZAKI , Satoshi MURAKAMI , Masahiko HAYAKAWA , Kiyoshi KATO , Mitsuaki OSAME
发明人： Shunpei YAMAZAKI , Satoshi MURAKAMI , Masahiko HAYAKAWA , Kiyoshi KATO , Mitsuaki OSAME
IPC分类号： H01L33/00
CPC分类号： H01L27/1248 , G02F1/136227 , H01L27/12 , H01L27/1214 , H01L27/124 , H01L27/1244 , H01L27/1255 , H01L27/13 , H01L27/3246 , H01L27/3276 , H01L33/52 , H01L51/5237 , H01L51/5253
摘要： It is an object of the present invention to provide a semiconductor display device having an interlayer insulating film which can obtain planarity of a surface while controlling film formation time, can control treatment time of heating treatment with an object of removing moisture, and can prevent moisture in the interlayer insulating film from being discharged to a film or an electrode adjacent to the interlayer insulating film. An inorganic insulating film containing nitrogen, which is less likely to transmit moisture compared with an organic resin, is formed so as to cover a TFT. Next, an organic resin film containing photosensitive acrylic resin is applied to the organic insulting film, and the organic resin film is partially exposed to light to be opened. Thereafter, an inorganic insulting film containing nitrogen, which is less likely to transmit moisture compared with an organic resin, is formed so as to cover the opened organic resin film. Then, in the opening part of the organic resin film, a gate insulating film and the two layer inorganic insulating film containing nitrogen are opened partially is by etching to expose an active layer of the TFT.
摘要翻译：本发明的目的是提供一种具有层间绝缘膜的半导体显示装置，其可以在控制成膜时间的同时获得表面的平面性，并且可以控制用于除去水分的加热处理的处理时间，并且可以防止水分在层间绝缘膜中不被放电到与层间绝缘膜相邻的膜或电极。形成与有机树脂相比不容易透过水分的含氮的无机绝缘膜，以覆盖TFT。接着，在有机绝缘膜上涂布含有感光性丙烯酸树脂的有机树脂膜，将有机树脂膜部分地曝光以打开。然后，形成与有机树脂相比不容易透过水分的含有氮的无机绝缘膜，以覆盖打开的有机树脂膜。然后，在有机树脂膜的开口部分，通过蚀刻部分地开启含有氮的栅极绝缘膜和双层无机绝缘膜，以暴露TFT的有源层。

42. 发明申请

US20100283067A1 SEMICONDUCTOR ELEMENT AND DISPLAY DEVICE USING THE SAME 有权
标题翻译：半导体元件和使用它的显示器件
公开(公告)号：US20100283067A1
公开(公告)日：2010-11-11
申请号：US12840350
申请日：2010-07-21
申请人： Satoshi MURAKAMI , Masahiko HAYAKAWA , Shunpei YAMAZAKI
发明人： Satoshi MURAKAMI , Masahiko HAYAKAWA , Shunpei YAMAZAKI
IPC分类号： H01L33/08
CPC分类号： H01L27/1248 , G02F1/133512 , G02F1/1337 , G02F1/1339 , G02F1/1341 , G02F1/13439 , G02F1/136213 , G02F1/136227 , G02F1/136286 , G02F1/1368 , G02F2201/123 , H01L23/3171 , H01L23/49827 , H01L27/1218 , H01L27/124 , H01L27/3248 , H01L27/3258 , H01L27/3276 , H01L29/41733 , H01L29/42384 , H01L29/66757 , H01L29/66765 , H01L29/786 , H01L29/78606 , H01L29/78651 , H01L2251/5315 , H01L2251/5338 , H01L2924/0002 , Y10S438/95 , H01L2924/00
摘要： Provided is a semiconductor element including: a semiconductor having an active layer; a gate insulating film which is in contact with the semiconductor; a gate electrode opposite to the active layer through the gate insulating film; a first nitride insulating film formed over the active layer; a photosensitive organic resin film formed on the first nitride insulating film; a second nitride insulating film formed on the photosensitive organic resin film; and a wiring provided on the second nitride insulating film, in which a first opening portion is provided in the photosensitive organic resin film, an inner wall surface of the first opening portion is covered with the second nitride insulating film, a second opening portion is provided in a laminate including the gate insulating film, the first nitride insulating film, and the second nitride insulating film inside the first opening portion, and the semiconductor is connected with the wiring through the first opening portion and the second opening portion.
摘要翻译：提供一种半导体元件，包括：具有活性层的半导体; 与半导体接触的栅极绝缘膜; 通过所述栅极绝缘膜与所述有源层相对的栅电极; 形成在有源层上的第一氮化物绝缘膜; 形成在第一氮化物绝缘膜上的光敏有机树脂膜; 形成在感光性有机树脂膜上的第二氮化物绝缘膜; 以及设置在第二氮化物绝缘膜上的布线，其中在感光性有机树脂膜中设置有第一开口部，第一开口部的内壁面被第二氮化物绝缘膜覆盖，设置有第二开口部在第一开口部内部具有栅极绝缘膜，第一氮化物绝缘膜和第二氮化物绝缘膜的层叠体中，半导体通过第一开口部和第二开口部与布线连接。

43. 发明申请

US20100201662A1 LIGHT EMITTING APPARATUS AND METHOD FOR MANUFACTURING THE SAME 有权
标题翻译：发光装置及其制造方法
公开(公告)号：US20100201662A1
公开(公告)日：2010-08-12
申请号：US12762469
申请日：2010-04-19
申请人： Shunpei YAMAZAKI , Satoshi MURAKAMI , Masayuki SAKAKURA , Toru TAKAYAMA
发明人： Shunpei YAMAZAKI , Satoshi MURAKAMI , Masayuki SAKAKURA , Toru TAKAYAMA
IPC分类号： G06F3/038 , H01L51/10 , H01L51/44
CPC分类号： H01L27/3244 , H01L27/12 , H01L27/1248 , H01L27/3246 , H01L27/3258 , H01L29/16 , H01L29/66757 , H01L29/78621 , H01L29/78645 , H01L29/78675 , H01L29/78696 , H01L51/5008 , H01L51/524 , H01L51/5253 , H01L51/56 , H01L2227/323 , H01L2251/566
摘要： The purpose of the invention is to improve reliability of a light emitting apparatus comprising TFTs and organic light emitting elements. The light emitting apparatus according to the invention having thin film transistors and light emitting elements, comprises; a second inorganic insulation layer on a gate electrode, a first organic insulation layer on the second inorganic insulation layer, a third inorganic insulation layer on the first organic insulation layer, an anode layer formed on the third inorganic insulation layer, a second organic insulation layer overlapping with the end of the anode layer and having an inclination angle of 35 to 45 degrees, a fourth inorganic insulation layer formed on the upper surface and side surface of the second organic insulation layer and having an opening over the anode layer, an organic compound layer formed in contact with the anode layer and the fourth inorganic insulation layer and containing light emitting material, and a cathode layer formed in contact with the organic compound layer containing the light emitting material, wherein the third inorganic insulation layer and the fourth inorganic insulation layer are formed with silicon nitride or aluminum nitride.
摘要翻译：本发明的目的是提高包括TFT和有机发光元件的发光装置的可靠性。根据本发明的具有薄膜晶体管和发光元件的发光装置包括：栅电极上的第二无机绝缘层，第二无机绝缘层上的第一有机绝缘层，第一有机绝缘层上的第三无机绝缘层，形成在第三无机绝缘层上的阳极层，第二有机绝缘层与阳极层的端部重叠并且具有35度至45度的倾斜角度;形成在第二有机绝缘层的上表面和侧表面上并且在阳极层上具有开口的第四无机绝缘层，有机化合物形成为与阳极层和第四无机绝缘层接触且含有发光材料的层，以及与含有发光材料的有机化合物层接触形成的阴极层，其中第三无机绝缘层和第四无机绝缘层由氮化硅或氮化铝形成。

44. 发明申请

US20080230871A1 SEMICONDUCTOR DISPLAY DEVICE AND METHOD OF MANUFACTURING THE SAME 有权
标题翻译：半导体显示装置及其制造方法
公开(公告)号：US20080230871A1
公开(公告)日：2008-09-25
申请号：US12122823
申请日：2008-05-19
申请人： Shunpei YAMAZAKI , Satoshi MURAKAMI , Masahiko HAYAKAWA , Kiyoshi KATO , Mitsuaki OSAME , Takashi HIROSUE , Saishi FUJIKAWA
发明人： Shunpei YAMAZAKI , Satoshi MURAKAMI , Masahiko HAYAKAWA , Kiyoshi KATO , Mitsuaki OSAME , Takashi HIROSUE , Saishi FUJIKAWA
IPC分类号： H01L29/92
CPC分类号： H01L27/1244 , G02F1/136204 , H01L21/76804 , H01L21/76831 , H01L27/1248 , H01L27/1255 , H01L27/3244 , H01L29/4908 , H01L29/66757 , H01L29/66765 , H01L29/78621 , H01L29/78645 , H01L51/0037 , Y10S257/906 , Y10S257/908
摘要： A semiconductor display device with an interlayer insulating film in which surface levelness is ensured with a limited film formation time, heat treatment for removing moisture does not take long, and moisture in the interlayer insulating film is prevented from escaping into a film or electrode adjacent to the interlayer insulating film. A TFT is formed and then a nitrogen-containing inorganic insulating film that transmits less moisture compared to organic resin film is formed so as to cover the TFT. Next, organic resin including photosensitive acrylic resin is applied and an opening is formed by partially exposing the organic resin film to light. The organic resin film where the opening is formed, is then covered with a nitrogen-containing inorganic insulating film which transmits less moisture than organic resin film does. Thereafter, the gate insulating film and the two layers of the nitrogen-containing inorganic insulating films are partially etched away in the opening of the organic resin film to expose the active layer of the TFT.
摘要翻译：具有层间绝缘膜的半导体显示装置，其中以有限的成膜时间确保表面水平度，用于除去水分的热处理不需要很长时间，并且防止层间绝缘膜中的水分逸出到邻近的膜或电极层间绝缘膜。形成TFT，然后形成与有机树脂膜相比传递较少水分的含氮无机绝缘膜，以覆盖TFT。接下来，施加包含感光性丙烯酸树脂的有机树脂，并通过将有机树脂膜部分地曝光而形成开口。然后，形成有开口部的有机树脂膜被覆盖有比有机树脂膜透过少的水分的含氮无机绝缘膜。此后，在有机树脂膜的开口部分将栅极绝缘膜和含氮无机绝缘膜的两层部分地蚀刻掉，以暴露TFT的有源层。

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