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41. 发明申请

US20080081106A1 SILICON PRECURSORS AND METHOD FOR LOW TEMPERATURE CVD OF SILICON-CONTAINING FILMS 有权
标题翻译：有机硅前驱体和含硅薄膜低温CVD的方法
公开(公告)号：US20080081106A1
公开(公告)日：2008-04-03
申请号：US11695379
申请日：2007-04-02
申请人： Ziyun Wang , Ashutosh Misra , Ravi Laxman
发明人： Ziyun Wang , Ashutosh Misra , Ravi Laxman
IPC分类号： B05D5/12 , C07F7/02
CPC分类号： C07F7/10 , C07F7/0838
摘要： Novel silicon precursors for low temperature deposition of silicon films are described herein. The disclosed precursors possess low vaporization temperatures, preferably less than about 500° C. In addition, embodiments of the silicon precursors incorporate a —Si—Y—Si— bond, where Y may comprise an amino group, a substituted or unsubstituted hydrocarbyl group, or oxygen. In an embodiment a silicon precursor has the formula: where Y is a hydrocarbyl group, a substituted hydrocarbyl group, oxygen, or an amino group; R1, R2, R3, and R4 are each independently a hydrogen group, a hydrocarbyl group, a substituted hydrocarbyl group, a heterohydrocarbyl group, wherein R1, R2, R3, and R4 may be the same or different from one another; X1, X2, X3, and X4 are each independently, a hydrogen group, a hydrocarbyl group, a substituted hydrocarbyl group, or a hydrazino group, wherein X1, X2, X3, and X4 may be the same or different from one another.
摘要翻译：本文描述了用于低温沉积硅膜的新型硅前体。所公开的前体具有低的汽化温度，优选小于约500℃。此外，硅前体的实施方案包含-Si-Y-Si-键，其中Y可以包含氨基，取代或未取代的烃基，或氧气。在一个实施方案中，硅前体具有下式：其中Y是烃基，取代的烃基，氧或氨基; R 1，R 2，R 3和R 4各自独立地为氢基团，烃基基团，取代的烃基，杂烃基，其中R 1，R 2，R 3和R 4都是 >可以相同或不同; X 1，X 2，X 3和X 4各自独立地为氢，烃基基团，取代的烃基或肼基，其中X 1，X 2，X 3和X 4， / SUB>可以相同或不同。

42. 发明申请

US20110244681A1 METHOD OF FORMING A TANTALUM-CONTAINING LAYER ON A SUBSTRATE 有权
标题翻译：在基材上形成含钽的层的方法
公开(公告)号：US20110244681A1
公开(公告)日：2011-10-06
申请号：US13056934
申请日：2009-07-15
申请人： Nicolas Blasco , Anthony Correia-Anacleto , Audrey Pinchart , Andreas Zauner , Ziyun Wang
发明人： Nicolas Blasco , Anthony Correia-Anacleto , Audrey Pinchart , Andreas Zauner , Ziyun Wang
IPC分类号： H01L21/3205
CPC分类号： C23C16/45553 , C23C16/18
摘要： A method for forming a tantalum-containing layer on a substrate, the method comprising at least the steps of: a) providing a vapor comprising at least one precursor compound of the formula Cp(R1)mTa(NR22)2(═NR3) (I): wherein: R1 is an organic ligand, each one independently selected in the group consisting of H, linear or branched hydrocarbyl radical comprising from 1 to 6 carbon atoms; R2 is an organic ligand, each one independently selected in the group consisting of H, linear or branched hydrocarbyl radical comprising from 1 to 6 carbon atoms; R3 is an organic ligand selected in the group consisting of H, linear or branched hydrocarbyl radical comprising from 1 to 6 carbon atoms; b) reacting the vapor comprising the at least one compound of formula (I) with the substrate, according to an atomic layer deposition process, to form a layer of a tantalum-containing complex on at least one surface of said substrate.
摘要翻译：一种在基底上形成含钽层的方法，所述方法至少包括以下步骤：a）提供包含至少一种式Cp（R1）mTa（NR22）2（= NR3）（= I）：其中：R 1是有机配体，每个独立地选自H，包含1至6个碳原子的直链或支链烃基; R2是有机配体，每个独立地选自H，包含1至6个碳原子的直链或支链烃基; R3是选自H，包含1至6个碳原子的直链或支链烃基的有机配体; b）根据原子层沉积方法使包含至少一种式（I）化合物的蒸气与基材反应，以在所述基材的至少一个表面上形成含钽复合物层。

43. 发明授权

US11008351B2 Methods for vapor deposition of group 4 transition metal-containing films using Group 4 transition metal-containing films forming compositions 有权
公开(公告)号：US11008351B2
公开(公告)日：2021-05-18
申请号：US16331204
申请日：2017-04-10
申请人： L'Air Liquide, Société Anonyme pour l'Etude et l'Exploitation des Procédés Georges Claude , Ziyun Wang , Zhiwen Wan , Jean-Marc Girard
发明人： Ziyun Wang , Zhiwen Wan , Jean-Marc Girard
IPC分类号： C23C16/18 , C07F7/28 , C23C16/455 , C07F17/00 , C23C16/40 , C07F7/00 , C23C16/08
摘要： Disclosed are methods of using Group 4 transition metal azatrane precursors to deposit Group 4 transition metal-containing films on one or more substrates via vapor deposition processes.

44. 发明授权

US09085823B2 Method of forming a tantalum-containing layer on a substrate 有权
标题翻译：在基板上形成含钽层的方法
公开(公告)号：US09085823B2
公开(公告)日：2015-07-21
申请号：US13056934
申请日：2009-07-15
申请人： Nicolas Blasco , Anthony Correia-Anacleto , Audrey Pinchart , Andreas Zauner , Ziyun Wang
发明人： Nicolas Blasco , Anthony Correia-Anacleto , Audrey Pinchart , Andreas Zauner , Ziyun Wang
IPC分类号： H01L21/3205 , C23C16/455 , C23C16/18
CPC分类号： C23C16/45553 , C23C16/18
摘要： A method for forming a tantalum-containing layer on a substrate, the method comprising at least the steps of: a) providing a vapor comprising at least one precursor compound of the formula Cp(R1)mTa(NR22)2(═NR3) (I): wherein: R1 is an organic ligand, each one independently selected in the group consisting of H, linear or branched hydrocarbyl radical comprising from 1 to 6 carbon atoms; R2 is an organic ligand, each one independently selected in the group consisting of H, linear or branched hydrocarbyl radical comprising from 1 to 6 carbon atoms; R3 is an organic ligand selected in the group consisting of H, linear or branched hydrocarbyl radical comprising from 1 to 6 carbon atoms; b) reacting the vapor comprising the at least one compound of formula (I) with the substrate, according to an atomic layer deposition process, to form a layer of a tantalum-containing complex on at least one surface of said substrate.
摘要翻译：一种在基底上形成含钽层的方法，所述方法至少包括以下步骤：a）提供包含至少一种式Cp（R1）mTa（NR22）2（= NR3）（= I）：其中：R 1是有机配体，每个独立地选自H，包含1至6个碳原子的直链或支链烃基; R2是有机配体，每个独立地选自H，包含1至6个碳原子的直链或支链烃基; R3是选自H，包含1至6个碳原子的直链或支链烃基的有机配体; b）根据原子层沉积方法使包含至少一种式（I）化合物的蒸气与基材反应，以在所述基材的至少一个表面上形成含钽复合物层。

45. 发明授权

US09073952B1 Synthesis method for carbosilanes 有权
标题翻译：碳硅烷的合成方法
公开(公告)号：US09073952B1
公开(公告)日：2015-07-07
申请号：US13458579
申请日：2012-04-27
申请人： Zhiwen Wan , Ziyun Wang , Ashutosh Misra , Jean-Marc Girard , Andrey V. Korolev
发明人： Zhiwen Wan , Ziyun Wang , Ashutosh Misra , Jean-Marc Girard , Andrey V. Korolev
IPC分类号： C07F7/18 , C07F7/08 , C07F7/12
CPC分类号： C07F7/1804 , C07F7/0827 , C07F7/0896 , C07F7/125 , C07F7/1876
摘要： Si(OEt)2[CH2—Si(OEt)3]2 compounds are synthesized by reacting a Grignard reagent having the formula Si(OEt)3(CH2MgCl) with a quenching agent having the formula Si(OEt)2Cl2.
摘要翻译：通过使具有式Si（OEt）3（CH2MgCl）的格氏试剂与具有式Si（OEt）2 Cl 2的淬灭剂反应，合成Si（OEt）2 [CH 2 -Si（OEt）3] 2化合物。

46. 发明申请

US20110275215A1 METHOD FOR FORMING A TITANIUM-CONTAINING LAYER ON A SUBSTRATE USING AN ATOMIC LAYER DEPOSITION (ALD) PROCESS 有权
标题翻译：使用原子层沉积（ALD）工艺在基板上形成含钛的层的方法
公开(公告)号：US20110275215A1
公开(公告)日：2011-11-10
申请号：US12920026
申请日：2009-02-13
申请人： Satoko Gatineau , Christian Dussarrat , Christophe Lachaud , Nicolas Blasco , Audrey Pinchart , Ziyun Wang , Jean-Marc Girard , Andreas Zauner
发明人： Satoko Gatineau , Christian Dussarrat , Christophe Lachaud , Nicolas Blasco , Audrey Pinchart , Ziyun Wang , Jean-Marc Girard , Andreas Zauner
IPC分类号： H01L21/3205
CPC分类号： H01J29/86 , C07F17/00 , C23C16/405 , C23C16/409 , C23C16/45553 , H01J31/127 , H01J2201/30469
摘要： A method for forming a titanium-containing layer on a substrate, the method comprising at least the steps of: a) providing a vapor comprising at least one precursor compound of the formula Ti(Me5Cp)(OR)3 (I), wherein R is selected in the group consisting in methyl, ethyl, isopropyl; or of the formula Ti(R1Cp)(OR2)3 (II), wherein R1 is selected from the group consisting in H, methyl, ethyl, isopropyl and R2 is independently selected from the group consisting in methyl, ethyl, isopropyl or tert-butyl; b) reacting the vapor comprising the at least one compound of formula (I) or (II) with the substrate, according to an atomic layer deposition process, to form a layer of a tantalum-containing complex on at least one surface of said substrate.
摘要翻译：一种在基材上形成含钛层的方法，所述方法至少包括以下步骤：a）提供包含至少一种式Ti（Me 5 C p）（OR）3（I）的前体化合物的蒸气，其中R 选自甲基，乙基，异丙基; 其中R 1选自H，甲基，乙基，异丙基和R 2独立地选自甲基，乙基，异丙基或叔丁基，丁基; b）根据原子层沉积工艺使包含至少一种式（I）或（II）化合物的蒸气与基材反应，以在所述基材的至少一个表面上形成含钽复合物层。

47. 发明授权

US08853075B2 Method for forming a titanium-containing layer on a substrate using an atomic layer deposition (ALD) process 有权
标题翻译：使用原子层沉积（ALD）工艺在衬底上形成含钛层的方法
公开(公告)号：US08853075B2
公开(公告)日：2014-10-07
申请号：US12920026
申请日：2009-02-13
申请人： Satoko Gatineau , Christian Dussarrat , Christophe Lachaud , Nicolas Blasco , Audrey Pinchart , Ziyun Wang , Jean-Marc Girard , Andreas Zauner
发明人： Satoko Gatineau , Christian Dussarrat , Christophe Lachaud , Nicolas Blasco , Audrey Pinchart , Ziyun Wang , Jean-Marc Girard , Andreas Zauner
IPC分类号： H01L21/4763 , H01J31/12 , H01J29/86
CPC分类号： H01J29/86 , C07F17/00 , C23C16/405 , C23C16/409 , C23C16/45553 , H01J31/127 , H01J2201/30469
摘要： Methods of forming titanium-containing layers on substrates are disclosed. In the disclosed methods, the vapor of a precursor compound having the formula Ti(Me5Cp)(OR)3, wherein R is selected from methyl, ethyl, or isopropyl is provided. The vapor is reacted with the substrate according to an atomic layer deposition process to form a titanium-containing complex on the surface of the substrate.
摘要翻译：公开了在基底上形成含钛层的方法。在所公开的方法中，提供了具有式Ti（Me 5 C p）（OR）3的前体化合物的蒸气，其中R选自甲基，乙基或异丙基。根据原子层沉积工艺使蒸气与基底反应，以在基底表面上形成含钛复合物。

48. 发明授权

US08227358B2 Silicon precursors and method for low temperature CVD of silicon-containing films 有权
标题翻译：硅前体和含硅薄膜低温CVD的方法
公开(公告)号：US08227358B2
公开(公告)日：2012-07-24
申请号：US13073112
申请日：2011-03-28
申请人： Ziyun Wang , Ashutosh Misra , Ravi Laxman
发明人： Ziyun Wang , Ashutosh Misra , Ravi Laxman
IPC分类号： H01L21/31 , H01L21/469 , C23C10/06
CPC分类号： C07F7/10 , C07F7/0838
摘要： Novel silicon precursors for low temperature deposition of silicon films are described herein. The disclosed precursors possess low vaporization temperatures, preferably less than about 500° C. In addition, embodiments of the silicon precursors incorporate a —Si—Y—Si— bond, where Y may comprise an amino group, a substituted or unsubstituted hydrocarbyl group, or oxygen. In an embodiment a silicon precursor has the formula: where Y is a hydrocarbyl group, a substituted hydrocarbyl group, oxygen, or an amino group; R1, R2, R3, and R4 are each independently a hydrogen group, a hydrocarbyl group, a substituted hydrocarbyl group, a heterohydrocarbyl group, wherein R1, R2, R3, and R4 may be the same or different from one another; X1, X2, X3, and X4 are each independently, a hydrogen group, a hydrocarbyl group, a substituted hydrocarbyl group, or a hydrazine group, wherein X1, X2, X3, and X4 may be the same or different from one another.
摘要翻译：本文描述了用于低温沉积硅膜的新型硅前体。所公开的前体具有低的汽化温度，优选小于约500℃。此外，硅前体的实施方案包含-Si-Y-Si-键，其中Y可以包含氨基，取代或未取代的烃基，或氧气。在一个实施方案中，硅前体具有下式：其中Y是烃基，取代的烃基，氧或氨基; R 1，R 2，R 3和R 4各自独立地为氢基，烃基，取代的烃基，杂烃基，其中R 1，R 2，R 3和R 4可以彼此相同或不同; X 1，X 2，X 3和X 4各自独立地为氢，烃基，取代的烃基或肼基，其中X 1，X 2，X 3和X 4可以彼此相同或不同。

49. 发明授权

US08101788B2 Silicon precursors and method for low temperature CVD of silicon-containing films 有权
标题翻译：硅前体和含硅薄膜低温CVD的方法
公开(公告)号：US08101788B2
公开(公告)日：2012-01-24
申请号：US11695379
申请日：2007-04-02
申请人： Ziyun Wang , Ashutosh Misra , Ravi Laxman
发明人： Ziyun Wang , Ashutosh Misra , Ravi Laxman
IPC分类号： C07F7/04 , C07F7/08 , C07F7/10
CPC分类号： C07F7/10 , C07F7/0838
摘要： Novel silicon precursors for low temperature deposition of silicon films are described herein. The disclosed precursors possess low vaporization temperatures, preferably less than about 500° C. In addition, embodiments of the silicon precursors incorporate a —Si—Y—Si— bond, where Y may comprise an amino group, a substituted or unsubstituted hydrocarbyl group, or oxygen. In an embodiment a silicon precursor has the formula: where Y is a hydrocarbyl group, a substituted hydrocarbyl group, oxygen, or an amino group; R1, R2, R3, and R4 are each independently a hydrogen group, a hydrocarbyl group, a substituted hydrocarbyl group, a heterohydrocarbyl group, wherein R1, R2, R3, and R4 may be the same or different from one another; X1, X2, X3, and X4 are each independently, a hydrogen group, a hydrocarbyl group, a substituted hydrocarbyl group, or a hydrazino group, wherein X1, X2, X3, and X4 may be the same or different from one another.
摘要翻译：本文描述了用于低温沉积硅膜的新型硅前体。所公开的前体具有低的汽化温度，优选小于约500℃。此外，硅前体的实施方案包含-Si-Y-Si-键，其中Y可以包含氨基，取代或未取代的烃基，或氧气。在一个实施方案中，硅前体具有下式：其中Y是烃基，取代的烃基，氧或氨基; R 1，R 2，R 3和R 4各自独立地为氢基，烃基，取代的烃基，杂烃基，其中R 1，R 2，R 3和R 4可以彼此相同或不同; X 1，X 2，X 3和X 4各自独立地为氢原子，烃基，取代烃基或肼基，其中X 1，X 2，X 3和X 4可以彼此相同或不同。

50. 发明申请

US20090020140A1 NON-FLAMMABLE SOLVENTS FOR SEMICONDUCTOR APPLICATIONS 审中-公开
标题翻译：用于半导体应用的非易燃溶剂
公开(公告)号：US20090020140A1
公开(公告)日：2009-01-22
申请号：US12135699
申请日：2008-06-09
申请人： Zhiwen WAN , Ashutosh Misra , Ziyun Wang
发明人： Zhiwen WAN , Ashutosh Misra , Ziyun Wang
IPC分类号： B08B3/10 , B08B3/08
CPC分类号： C11D11/0041 , C11D7/5018 , C23C16/4407
摘要： Methods and compositions for purging and cleaning a semiconductor fabrication system are disclosed herein. In general, the disclosed methods utilize solvents comprising hydrofluoroethers. Hydrofluoroethers are non-toxic and have low moisture content, preventing heat generation from organometallic precursor hydrolysis. In an embodiment, a method of cleaning a semiconductor fabrication system comprises dissolving at least one chemical precursor used in semiconductor fabrication in at least one delivery line with a solvent to clean the at least one delivery line. The solvent generally comprises a hydrofluoroether. The methods and compositions may be used in a variety of semiconductor film deposition processes.
摘要翻译：本文公开了用于清洗和清洁半导体制造系统的方法和组合物。通常，所公开的方法使用包含氢氟醚的溶剂。氢氟醚无毒，水分含量低，防止有机金属前体水解产生热量。在一个实施方案中，清洁半导体制造系统的方法包括将至少一种用于半导体制造的化学前体溶解在至少一个输送管线中的溶剂中以清洁至少一个输送管线。溶剂通常包含氢氟醚。该方法和组合物可用于各种半导体膜沉积工艺中。

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