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41. 发明授权

US08597439B2 High-strength cold rolled steel sheet having excellent formability, and plated steel sheet 有权
标题翻译：优异的成形性的高强度冷轧钢板，镀钢板
公开(公告)号：US08597439B2
公开(公告)日：2013-12-03
申请号：US12640229
申请日：2009-12-17
申请人： Shushi Ikeda , Yoichi Mukai , Hiroshi Akamizu , Koichi Makii , Koichi Sugimoto , Shunichi Hashimoto , Kenji Saito
发明人： Shushi Ikeda , Yoichi Mukai , Hiroshi Akamizu , Koichi Makii , Koichi Sugimoto , Shunichi Hashimoto , Kenji Saito
IPC分类号： C22C38/12
CPC分类号： C22C38/02 , C22C38/04 , C22C38/12
摘要： A high-strength cold rolled steel sheet contains:0.10 to 0.28% of C,1.0 to 2.0% of Si,1.0 to 3.0% of Mn, and0.03 to 0.10% of Nb in terms of % by mass,Al is controlled to 0.5 or less, P is controlled to 0.15% or less, and S is controlled to 0.02% or less, and residual austenite accounts for 5 to 20%, bainitic ferrite accounts for 50% or more, and polygonal ferrite accounts for 30% or less (containing 0%), of the entire structure, and a mean number of residual austenite blocks is 20 or more as determined when the random area (15 μm×15 μm) is observed by EBSP (electron back scatter diffraction pattern).
摘要翻译：高强度冷轧钢板包含：以质量％计，C：0.10〜0.28％，Si：1.0〜2.0％，Mn：1.0〜3.0％，Nb：0.03〜0.10％，Al：以下，P为0.15％以下，S为0.02％以下，残留奥氏体为5〜20％，贝氏体铁素体为50％以上，多边形铁素体为30％以下（含有0％），并且当通过EBSP（电子背散射衍射图）观察到随机面积（15mum×15mum））时，残留奥氏体块的平均数为20以上。

42. 发明授权

US08564941B2 Electronic apparatus 失效
标题翻译：电子仪器
公开(公告)号：US08564941B2
公开(公告)日：2013-10-22
申请号：US12827088
申请日：2010-06-30
申请人： Manabu Watabe , Kenji Saito
发明人： Manabu Watabe , Kenji Saito
IPC分类号： H05K5/00 , H05K7/00 , G06F1/16
CPC分类号： G06F1/1616
摘要： An electronic apparatus includes a keyboard unit, a first circuit board, and a first electronic component. The keyboard unit includes a plate that includes a front surface and a bottom surface facing each other and a first coupling portion protruding from the bottom surface, and a plurality of keys provided on the front surface side of the plate. The first circuit board is provided to face the bottom surface via the first coupling portion and includes a second coupling portion to be coupled with the first coupling portion and a first front surface as a surface on a side that faces the bottom surface. The first electronic component is mounted on the first front surface of the first circuit board.
摘要翻译：电子设备包括键盘单元，第一电路板和第一电子元件。键盘单元包括：板，其包括彼此面对的前表面和底表面;以及从底表面突出的第一联接部分和设置在板的前表面侧上的多个键。第一电路板经由第一联接部分设置为面对底面，并且包括与第一联接部分联接的第二联接部分和作为面向底面的一侧上的表面的第一前表面。第一电子部件安装在第一电路板的第一前表面上。

43. 发明授权

US08517795B2 Surface treatment method for vacuum member 有权
标题翻译：真空部件的表面处理方法
公开(公告)号：US08517795B2
公开(公告)日：2013-08-27
申请号：US10532586
申请日：2003-10-31
申请人： Kenji Saito , Tamao Higuchi
发明人： Kenji Saito , Tamao Higuchi
IPC分类号： B24B49/08
CPC分类号： C23F3/06 , B24B1/00 , B24B31/0218 , C23F3/03 , C25F3/16
摘要： A surface-treating process and a forming process in which an inner surface of a vacuum member is mechanically polished in the presence of a liquid medium including no hydrogen atom.
摘要翻译：在不含氢原子的液体介质的存在下，对真空部件的内表面进行机械研磨的表面处理工序和成形工序。

44. 发明授权

US08415502B2 Method and apparatus for producing mono-lower-alkyl monoalkanolamine 有权
标题翻译：单低级烷基单链烷醇胺的制备方法和装置
公开(公告)号：US08415502B2
公开(公告)日：2013-04-09
申请号：US12994599
申请日：2008-10-24
申请人： Tatsuya Tsujiuchi , Shinya Tachibana , Tsuyoshi Oishi , Tomio Mimura , Yasuyuki Yagi , Hidehisa Mita , Ryosuke Araki , Kenji Saito
发明人： Tatsuya Tsujiuchi , Shinya Tachibana , Tsuyoshi Oishi , Tomio Mimura , Yasuyuki Yagi , Hidehisa Mita , Ryosuke Araki , Kenji Saito
IPC分类号： C07C213/04
CPC分类号： C07C213/10 , C07C213/04 , C07C215/08
摘要： A reaction column (12) to which a raw material mixture (11) containing a mono-lower-alkylamine (AA: raw material I) and an alkylene oxide (AO: raw material II) is supplied, an unreacted raw material distillation column (14) that separates an unreacted raw material (15) from a reaction product (13a) (containing the unreacted raw material (15), a target reaction product (monomer) (17), and a by-product (dimer) (18)), and a flash drum (16) to which a reaction product (13b) (containing the target reaction product (monomer) (17) and the by-product (dimer) (18)) is supplied, the flash drum (16) separating a mono-lower-alkyl monoalkanolamine (monomer, the target reaction product 17) in a gas state, are provided.
摘要翻译：将供给含有单低级烷基胺（AA：原料I）和环氧烷（AO：原料II））的原料混合物（11）的反应塔（12），未反应原料蒸馏塔 14），将未反应的原料（15）与反应产物（13a）（含有未反应的原料（15）），目标反应产物（单体）（17）和副产物（二聚体）（18）分离，）和提供有反应产物（13b）（含有目标反应产物（单体）（17）和副产物（二聚体）（18））的闪蒸筒），闪蒸鼓（16）分离出气态下的单低级烷基单烷醇胺（单体，目标反应产物17）。

45. 发明授权

US08323880B2 Positive resist processing liquid composition and liquid developer 失效
标题翻译：正抗蚀剂处理液体组合物和液体显影剂
公开(公告)号：US08323880B2
公开(公告)日：2012-12-04
申请号：US12310054
申请日：2007-08-10
申请人： Yutaka Murakami , Norio Ishikawa , Taku Murata , Kenji Saito , Ryosuke Araki
发明人： Yutaka Murakami , Norio Ishikawa , Taku Murata , Kenji Saito , Ryosuke Araki
IPC分类号： G03F7/26
CPC分类号： G03F7/322
摘要： Disclosed is a positive resist processing liquid composition which is composed of an aqueous solution containing a quaternary ammonium hydroxide represented by the following general formula (I). In the formula, R1 and R3 independently represent a methyl group, and R2 represents an alkyl group having 12-18 carbon atoms.
摘要翻译：公开了由含有由以下通式（I）表示的季铵氢氧化物的水溶液组成的正性抗蚀剂处理液体组合物。在该式中，R 1和R 3独立地表示甲基，R 2表示具有12-18个碳原子的烷基。

46. 发明申请

US20110130294A1 METHOD OF MANUFACTURING SUPERCONDUCTING RADIO-FREQUENCY ACCELERATION CAVITY 有权
标题翻译：制造超导频率加速炉的方法
公开(公告)号：US20110130294A1
公开(公告)日：2011-06-02
申请号：US12737651
申请日：2009-06-24
申请人： Kenji Saito , Koichi Takeuchi , Hiroshi Yamazaki
发明人： Kenji Saito , Koichi Takeuchi , Hiroshi Yamazaki
IPC分类号： H01L39/24
CPC分类号： H05H7/20 , B21D22/20 , B21D35/005 , C22B34/24 , C22C27/00 , Y10T29/49014
摘要： To provide a manufacturing method of a superconducting radio-frequency acceleration cavity used in a charged particle accelerator enabling the manufacturing with few waste amounts of the niobium material at low cost in a short time, the manufacturing method has each of the steps of (a) obtaining an ingot made from a disk-shaped niobium material, (b) slicing and cutting the niobium ingot into a plurality of niobium plates each with a predetermined thickness, by vibrating multiple wires back and forth while spraying fine floating abrasive grains with the niobium ingot supported, (c) removing the floating abrasive grains adhered to the sliced niobium plates, and (d) performing deep draw forming on the niobium plates and thereby obtaining a niobium cell of a desired shape.
摘要翻译：为了提供一种用于带电粒子加速器的超导射频加速腔的制造方法，其能够在短时间内以低成本制造少量的铌材料，所以制造方法具有以下步骤：（a）获得由圆盘形铌材料制成的铸锭，（b）通过在铌锭中喷洒细的浮动磨料颗粒来回振动多根钢丝，将铌锭切割并切割成多个具有预定厚度的铌板（c）除去附着在切片的铌板上的浮动磨粒，（d）在铌板上进行深冲压成形，得到所需形状的铌电池。

47. 发明申请

US20110051345A1 ELECTRONIC APPARATUS 失效
标题翻译：电子设备
公开(公告)号：US20110051345A1
公开(公告)日：2011-03-03
申请号：US12827088
申请日：2010-06-30
申请人： Manabu WATABE , Kenji Saito
发明人： Manabu WATABE , Kenji Saito
IPC分类号： H05K5/02
CPC分类号： G06F1/1616
摘要： An electronic apparatus includes a keyboard unit, a first circuit board, and a first electronic component. The keyboard unit includes a plate that includes a front surface and a bottom surface facing each other and a first coupling portion protruding from the bottom surface, and a plurality of keys provided on the front surface side of the plate. The first circuit board is provided to face the bottom surface via the first coupling portion and includes a second coupling portion to be coupled with the first coupling portion and a first front surface as a surface on a side that faces the bottom surface. The first electronic component is mounted on the first front surface of the first circuit board.
摘要翻译：电子设备包括键盘单元，第一电路板和第一电子元件。键盘单元包括：板，其包括彼此面对的前表面和底表面;以及从底表面突出的第一联接部分和设置在板的前表面侧上的多个键。第一电路板经由第一联接部分设置为面对底面，并且包括与第一联接部分联接的第二联接部分和作为面向底面的一侧上的表面的第一前表面。第一电子部件安装在第一电路板的第一前表面上。

48. 发明申请

US20060169366A1 High strength bolt having excellent hydrogen embrittlement resistance 审中-公开
标题翻译：高强度螺栓具有优异的耐氢脆性
公开(公告)号：US20060169366A1
公开(公告)日：2006-08-03
申请号：US11340472
申请日：2006-01-27
申请人： Fumio Yuse , Kenji Saito , Shushi Ikeda , Koichi Sugimoto
发明人： Fumio Yuse , Kenji Saito , Shushi Ikeda , Koichi Sugimoto
IPC分类号： C22C38/00
CPC分类号： C22C38/02 , C21D6/005 , C21D6/008 , C21D2211/002 , C22C38/04
摘要： The present invention provides a high strength bolt that has excellent hydrogen embrittlement resistance. The high strength bolt having excellent hydrogen embrittlement resistance which bolt comprises 0.20 to 0.60% of C, 1.0 to 3.0% of Si, 1.0 to 3.5% of Mn, higher than 0% and not higher than 1.5% of Al, 0.15% or less P, 0.02% or less S, and balance of iron and inevitable impurities, and the structure includes: 1% or more residual austenite; 80% or more in total content of bainitic ferrite and martensite; and 10% or less (may be 0%) in total content of ferrite and pearlite in the proportion of area to the entire structure, and also the mean axis ratio (major axis/minor axis) of the residual austenite grains is 5 or higher and the bolt has tensile strength of 1180 MPa or higher.
摘要翻译：本发明提供耐氢脆性优异的高强度螺栓。具有优异的耐氢脆性的高强度螺栓包括C：0.20〜0.60％，Si：1.0〜3.0％，Mn：1.0〜3.5％，Al：1.5％以上，0.15％以下 P，0.02％以下S，余量为铁和不可避免的杂质，其结构包括：1％以上残余奥氏体; 贝氏体铁素体和马氏体总含量为80％以上; 和铁素体和珠光体的总含量相对于整个结构的面积的比例为10％以下（可以为0％），残余奥氏体晶粒的平均轴比（长轴/短轴）为5以上螺栓的拉伸强度为1180MPa以上。

49. 发明申请

US20050260678A1 Method of diagnosing nephrotic syndrome 失效
标题翻译：诊断肾病综合征的方法
公开(公告)号：US20050260678A1
公开(公告)日：2005-11-24
申请号：US10487978
申请日：2002-08-29
申请人： Naohisa Tomosugi , Mieko Shiwa , Kenji Saito
发明人： Naohisa Tomosugi , Mieko Shiwa , Kenji Saito
IPC分类号： G01N33/53 , G01N33/68
CPC分类号： G01N33/6851 , G01N33/6848 , G01N33/6893 , G01N33/6896 , G01N2800/347 , Y10S436/811 , Y10T436/25
摘要： This invention provides organic biomolecule markers (e.g., proteins) useful for differentiating minimal change nephrotic syndrome (MCNS) from focal segmental glomerulosclerosis (FCS), membranous nephrothropy (MN), and membranoproliferative glomerulonephritis (MPGN). This invention also provides organic biomolecule markers useful for evaluating the therapeutic value of agents for treating kidney disease.
摘要翻译：本发明提供了可用于区分局灶性节段性肾小球硬化（FCS），膜性肾病（MN）和膜增生性肾小球肾炎（MPGN）的最小变化肾病综合征（MCNS）的有机生物分子标志物（例如蛋白质）。本发明还提供了可用于评估用于治疗肾脏疾病的药剂的治疗价值的有机生物分子标志物。

50. 发明申请

US20050230748A1 Semiconductor memory device and manufacturing method therefor 有权
公开(公告)号：US20050230748A1
公开(公告)日：2005-10-20
申请号：US11155849
申请日：2005-06-17
申请人： Kenji Saito , Hiroshi Furuta
发明人： Kenji Saito , Hiroshi Furuta
IPC分类号： H01L21/8247 , G11C16/04 , H01L21/8246 , H01L27/115 , H01L29/788 , H01L29/792 , H01L29/76
CPC分类号： H01L27/11568 , G11C16/0475 , H01L27/115 , Y10S257/90 , Y10S257/909
摘要： A semiconductor memory device, adapted for storing plural bits per cell to be able to accomplish high storage density by a simplified structure, includes a plurality of first gate electrodes extending parallel to one another along one direction and a plurality of second gate electrodes extending in a direction of intersecting the first gate electrodes, in which a diffusion region is provided on each of a plurality of divisions demarcated in a matrix-like pattern by first and second electrodes on a substrate surface. One of the divisions, the four sides of which are defined by two neighboring first gate electrodes and two neighboring second gate electrodes, has four independently accessible bits, and is connected by a contact (CT) with a diffusion region in the division. There are provided a plurality of interconnections connected via contacts to the diffusion regions of other divisions in the plural matrix-like divisions lying on the line of extension of the aforementioned diagonal line. A plurality of the aforementioned interconnections are arranged for extending parallel to one another in the memory cell array in an oblique direction relative to the lattice of the first and second electrodes.

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