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41. 发明申请

US20060014081A1 Holographic recording medium and method of manufacturing the same 失效
公开(公告)号：US20060014081A1
公开(公告)日：2006-01-19
申请号：US11129403
申请日：2005-05-16
申请人： Rumiko Hayase , Akiko Hirao , Kazuki Matsumoto , Takayuki Tsukamoto , Katsutaro Ichihara , Urara Ichihara
发明人： Rumiko Hayase , Akiko Hirao , Kazuki Matsumoto , Takayuki Tsukamoto , Katsutaro Ichihara , Urara Ichihara
IPC分类号： G03H1/02 , G03C1/735
CPC分类号： G11B7/0065 , G03H2001/026 , G03H2001/0264 , G11B7/245 , G11B7/26
摘要： Disclosed is a holographic recording medium and methods of manufacturing the holographic recording medium. The example of the medium has a recording layer containing a three dimensionally cross-linked polymer matrix including an epoxy resin, a radically polymerizable monomer, and a photo radical polymerization initiator. The radically polymerizable monomer comprises both N-vinylcarbazole (VC) and N-vinylpyrrolidone (VP) or N-vinylcarbazole alone. The weight ratio of N-vinylcarbazole (VC) to the sum of N-vinylcarbazole (VC) and N-vinylpyrrolidone (VP), i.e., (VC/(VC+VP)), is not smaller than 0.75 and not larger than 1.0.

42. 发明授权

US08487345B2 Information recording and reproducing device 失效
标题翻译：信息记录和再现装置
公开(公告)号：US08487345B2
公开(公告)日：2013-07-16
申请号：US12885952
申请日：2010-09-20
申请人： Takayuki Tsukamoto , Tsukasa Nakai , Akira Kikitsu , Takeshi Yamaguchi , Sumio Ashida
发明人： Takayuki Tsukamoto , Tsukasa Nakai , Akira Kikitsu , Takeshi Yamaguchi , Sumio Ashida
IPC分类号： H01L21/02
CPC分类号： G11B11/002 , B82Y10/00 , G11B9/04 , G11B9/149 , G11B11/08 , G11C11/56 , G11C11/5678 , G11C13/0004 , G11C13/003 , G11C16/0483 , G11C2211/565 , G11C2213/53 , G11C2213/56 , G11C2213/71 , G11C2213/72 , G11C2213/75 , G11C2213/78 , G11C2213/79 , H01L27/2409 , H01L27/2481 , H01L45/06 , H01L45/1233 , H01L45/1246 , H01L45/1286 , H01L45/144 , H01L45/1683
摘要： According to one embodiment, an information recording and reproducing device includes a stacked body. The stacked body includes a first layer, a second layer and a recording layer provided between the first layer and the second layer. The recording layer includes a phase-change material and a crystal nucleus. The phase-change material is capable of reversely changing between a crystal state and an amorphous state by a current supplied via the first layer and the second layer. The crystal nucleus is provided in contact with the phase-change material and includes a crystal nucleus material having a crystal structure identical to a crystal structure of the crystal state of the phase-change material, and a crystal nucleus coating provided on a surface of the crystal nucleus material and having a composition different from a composition of the crystal nucleus material.
摘要翻译：根据一个实施例，信息记录和再现装置包括堆叠体。层叠体包括设置在第一层和第二层之间的第一层，第二层和记录层。记录层包括相变材料和晶核。相变材料能够通过经由第一层和第二层提供的电流在晶体状态和非晶状态之间反向变化。提供与相变材料接触的晶核，并且包括具有与相变材料的晶体状态的晶体结构相同的晶体结构的晶核材料，以及设置在相变材料的表面上的晶核涂层并且具有与晶核材料的组成不同的组成的晶核材料。

43. 发明授权

US08416606B2 Information recording and reproducing device 有权
标题翻译：信息记录和再现装置
公开(公告)号：US08416606B2
公开(公告)日：2013-04-09
申请号：US13040823
申请日：2011-03-04
申请人： Takayuki Tsukamoto , Tsukasa Nakai , Chikayoshi Kamata , Mariko Hayashi , Fumihiko Aiga , Takeshi Yamaguchi
发明人： Takayuki Tsukamoto , Tsukasa Nakai , Chikayoshi Kamata , Mariko Hayashi , Fumihiko Aiga , Takeshi Yamaguchi
IPC分类号： G11C11/00
CPC分类号： G11B9/04 , G11C13/0004 , G11C13/0007 , G11C13/003 , G11C2213/51 , G11C2213/56 , G11C2213/71 , G11C2213/72 , G11C2213/75 , G11C2213/79 , H01L27/101 , H01L27/2409 , H01L27/2481 , H01L45/04 , H01L45/1233 , H01L45/126 , H01L45/147
摘要： According to one embodiment, an information recording and reproducing device includes a recording layer and a driving unit. The recording layer includes a first layer containing a first compound. The first compound includes a first positive ion element. The first positive ion element is made of a transition metal element and serves as a first positive ion. The second positive ion element serves as a second positive ion. The driving unit is configured to generate a phase change in the recording layer and to record information by at least one of application of a voltage and application of a current to the recording layer. The coordination number of the first positive ion element at a position of a second coordination of the second positive ion element is 80% or more and less than 100% of the coordination number when the first compound is assumed to be a perfect crystal.
摘要翻译：根据一个实施例，信息记录和再现装置包括记录层和驱动单元。记录层包括含有第一化合物的第一层。第一化合物包括第一正离子元素。第一正离子元件由过渡金属元素制成并用作第一正离子。第二正离子元素用作第二正离子。驱动单元被配置为在记录层中产生相变，并且通过施加电压和施加电流到记录层中的至少一个来记录信息。当假设第一化合物为完美晶体时，第二正离子元件的第二配位位置处的第一正离子元素的配位数为配位数的80％以上且小于配位数的100％。

44. 发明授权

US08274815B2 Nonvolatile semiconductor memory device 有权
标题翻译：非易失性半导体存储器件
公开(公告)号：US08274815B2
公开(公告)日：2012-09-25
申请号：US12886931
申请日：2010-09-21
申请人： Reika Ichihara , Takayuki Tsukamoto
发明人： Reika Ichihara , Takayuki Tsukamoto
IPC分类号： G11C11/00
CPC分类号： G11C11/00 , G11C2013/0083
摘要： A nonvolatile semiconductor memory device in accordance with an embodiment comprises a plurality of first, second lines, a plurality of memory cells, and a control circuit. The plurality of second lines extend so as to intersect the first lines. The plurality of memory cells are disposed at intersections of the first, second lines, and each includes a variable resistor. The control circuit is configured to control a voltage applied to the memory cells. The control circuit applies a first pulse voltage to the variable resistor during a forming operation. In addition, the control circuit applies a second pulse voltage to the variable resistor during a setting operation, the second pulse voltage having a polarity opposite to the first pulse voltage. Furthermore, the control circuit applies a third pulse voltage to the variable resistor during a resetting operation, the third pulse voltage having a polarity identical to the first pulse voltage.
摘要翻译：根据实施例的非易失性半导体存储器件包括多个第一，第二线，多个存储单元和控制电路。多个第二线延伸以与第一线相交。多个存储单元设置在第一和第二线的交点处，并且每个都包括可变电阻器。控制电路被配置为控制施加到存储器单元的电压。控制电路在成形操作期间向可变电阻器施加第一脉冲电压。此外，控制电路在设定操作期间向可变电阻施加第二脉冲电压，第二脉冲电压具有与第一脉冲电压相反的极性。此外，控制电路在复位操作期间向可变电阻器施加第三脉冲电压，第三脉冲电压具有与第一脉冲电压相同的极性。

45. 发明授权

US08269205B2 Information recording and reproducing device 有权
标题翻译：信息记录和再现装置
公开(公告)号：US08269205B2
公开(公告)日：2012-09-18
申请号：US12886254
申请日：2010-09-20
申请人： Kohichi Kubo , Chikayoshi Kamata , Takayuki Tsukamoto , Shinya Aoki , Takahiro Hirai , Tsukasa Nakai , Toshiro Hiraoka
发明人： Kohichi Kubo , Chikayoshi Kamata , Takayuki Tsukamoto , Shinya Aoki , Takahiro Hirai , Tsukasa Nakai , Toshiro Hiraoka
IPC分类号： H01L29/02
CPC分类号： B82Y10/00 , G11B9/04 , G11B9/1481 , G11B9/149 , G11C13/0007 , G11C13/003 , G11C13/0069 , G11C2013/0073 , G11C2213/51 , G11C2213/53 , G11C2213/55 , G11C2213/56 , G11C2213/71 , G11C2213/72 , G11C2213/75 , G11C2213/79 , H01L27/101
摘要： According to one embodiment, an information recording and reproducing device includes a first layer, a second layer and a recording layer. The recording layer is provided between the first layer and the second layer and being capable of reversibly changing between a first state having a first resistance and a second state having a second resistance higher than the first resistance. The recording layer includes a first compound layer and a second compound layer. The first compound layer contains a first compound. The first compound includes a first cation element and a second cation element of a type different from the first cation element. The second compound layer contains a second compound. The second compound includes a transition element having a d-orbital partially filled with electron, and the second compound includes a void site capable of storing at least one of the first cation element and the second cation element.
摘要翻译：根据一个实施例，信息记录和再现装置包括第一层，第二层和记录层。记录层设置在第一层和第二层之间，并且能够在具有第一电阻的第一状态和具有高于第一电阻的第二电阻的第二状态之间可逆地改变。记录层包括第一化合物层和第二化合物层。第一化合物层含有第一化合物。第一化合物包括第一阳离子元件和不同于第一阳离子元件的第二阳离子元件。第二化合物层含有第二化合物。第二化合物包括具有部分填充有电子的d轨道的过渡元素，并且第二化合物包括能够存储第一阳离子元件和第二阳离子元素中的至少一种的空隙位置。

46. 发明授权

US08207518B2 Information recording and reproducing device 有权
标题翻译：信息记录和再现装置
公开(公告)号：US08207518B2
公开(公告)日：2012-06-26
申请号：US12885719
申请日：2010-09-20
申请人： Kohichi Kubo , Chikayoshi Kamata , Takayuki Tsukamoto , Shinya Aoki , Takahiro Hirai , Tsukasa Nakai , Toshiro Hiraoka
发明人： Kohichi Kubo , Chikayoshi Kamata , Takayuki Tsukamoto , Shinya Aoki , Takahiro Hirai , Tsukasa Nakai , Toshiro Hiraoka
IPC分类号： H01L29/02
CPC分类号： H01L27/101 , B82Y10/00 , G11B9/04 , G11B9/149 , G11C13/0007 , G11C13/003 , G11C13/0069 , G11C2013/0073 , G11C2213/51 , G11C2213/53 , G11C2213/55 , G11C2213/56 , G11C2213/71 , G11C2213/72 , G11C2213/75 , G11C2213/79 , H01L27/2409 , H01L27/2481 , H01L45/085 , H01L45/1233 , H01L45/126 , H01L45/147
摘要： According to one embodiment, an information recording and reproducing device includes a first layer, a second layer and a recording layer. The recording layer is provided between the first layer and the second layer and being capable of reversibly changing between a first state having a first resistance and a second state having a second resistance higher than the first resistance by a current supplied via the first layer and the second layer. The recording layer includes a first compound layer and an insulating layer. The first compound layer contains a first compound. The first compound includes a first cation element and a second cation element of a type different from the first cation element. The insulating layer contains a third compound, and the third compound includes an element selected from group 1 to 4 elements and group 12 to 17 elements in the periodic table.
摘要翻译：根据一个实施例，信息记录和再现装置包括第一层，第二层和记录层。记录层设置在第一层和第二层之间，并且能够通过经由第一层提供的电流在具有第一电阻的第一状态和具有比第一电阻高的第二电阻的第二状态之间可逆地改变，第二层。记录层包括第一化合物层和绝缘层。第一化合物层含有第一化合物。第一化合物包括第一阳离子元件和不同于第一阳离子元件的第二阳离子元件。绝缘层包含第三化合物，第三化合物包括选自元素周期表中第1至4族元素和第12至17族元素的元素。

47. 发明申请

US20120134444A1 Semiconductor Device Having First and Second Demodulation Circuits for Wireless Communication 有权
标题翻译：具有用于无线通信的第一和第二解调电路的半导体器件
公开(公告)号：US20120134444A1
公开(公告)日：2012-05-31
申请号：US13298897
申请日：2011-11-17
申请人： Takayuki Tsukamoto
发明人： Takayuki Tsukamoto
IPC分类号： H03D1/24
CPC分类号： H04L27/06 , G06K7/0008 , H03D1/00 , H04B5/0031
摘要： A device receives ASK signals by using an ASK signal receiving circuit that is different from an ASK signal receiving circuit for R/W mode, when an NFC-enabled semiconductor device operates in a mode other than the R/W mode. An ASK signal receiving circuit for 100% ASK is provided on the side of a pair of transmitting terminals. This arrangement eliminates the influence of an ESD provided within an ASK signal receiving circuit for 10% ASK coupled to a pair of receiving terminals. There is no need for management of threshold values that are different according to type of ASK and it is possible to support different modulation schemes by a smaller circuit configuration.
摘要翻译：当NFC功能半导体器件以除R / W模式之外的模式工作时，器件通过使用与用于R / W模式的ASK信号接收电路不同的ASK信号接收电路来接收ASK信号。在一对发送端子的一侧设置有用于100％ASK的ASK信号接收电路。这种布置消除了在与一对接收终端耦合的10％ASK的ASK信号接收电路内提供的ESD的影响。不需要根据ASK的类型来管理不同的阈值，并且可以通过较小的电路配置来支持不同的调制方案。

48. 发明授权

US08188455B2 Information recording/reproducing device 有权
标题翻译：信息记录/再现装置
公开(公告)号：US08188455B2
公开(公告)日：2012-05-29
申请号：US12636366
申请日：2009-12-11
申请人： Takayuki Tsukamoto , Kohichi Kubo , Chikayoshi Kamata , Takahiro Hirai , Shinya Aoki , Toshiro Hiraoka
发明人： Takayuki Tsukamoto , Kohichi Kubo , Chikayoshi Kamata , Takahiro Hirai , Shinya Aoki , Toshiro Hiraoka
IPC分类号： H01L45/00
CPC分类号： G11B9/149 , B82Y10/00 , G11B9/04 , G11B9/1436 , G11B9/1481 , H01L27/2409 , H01L27/2481 , H01L45/04 , H01L45/1233 , H01L45/126 , H01L45/147 , H01L45/1625
摘要： An information recording/reproducing device includes a recording layer, and a recording circuit which records data to the recording layer by generating a phase change in the recording layer. The recording layer includes a first chemical compound having a spinel structure. The recording layer is AxMyX4 (0.1≦x≦2.2, 1.0≦y≦2.0), where A includes one selected from a group of Zn, Cd and Hg, M includes one selected from a group of Ti, Zr, Hf, V, Nb and Ta, and X includes O.
摘要翻译：一种信息记录/再现装置，包括记录层，以及通过在记录层中产生相位变化而将数据记录到记录层的记录电路。记录层包括具有尖晶石结构的第一化合物。记录层为AxMyX4（0.1＆nlE; x＆nlE; 2.2,1.0＆nlE; y＆nlE; 2.0），其中A包括选自Zn，Cd和Hg的一种，M包括选自Ti，Zr，Hf， V，Nb和Ta，X包括O.

49. 发明授权

US08089796B2 Information recording and reproducing device 有权
标题翻译：信息记录和再现装置
公开(公告)号：US08089796B2
公开(公告)日：2012-01-03
申请号：US12886040
申请日：2010-09-20
申请人： Takayuki Tsukamoto , Takeshi Yamaguchi , Chikayoshi Kamata , Tsukasa Nakai , Takahiro Hirai , Shinya Aoki , Kohichi Kubo
发明人： Takayuki Tsukamoto , Takeshi Yamaguchi , Chikayoshi Kamata , Tsukasa Nakai , Takahiro Hirai , Shinya Aoki , Kohichi Kubo
IPC分类号： G11C5/06
CPC分类号： G11B9/04 , B82Y10/00 , G11B9/149 , G11B11/002 , G11B11/08 , G11C11/5678 , G11C11/5685 , G11C13/0004 , G11C13/0007 , G11C13/003 , G11C16/0483 , G11C2211/565 , G11C2213/32 , G11C2213/56 , G11C2213/71 , G11C2213/72 , G11C2213/75 , G11C2213/78 , G11C2213/79 , H01L27/101 , H01L27/2409 , H01L27/2481 , H01L45/06 , H01L45/08 , H01L45/085 , H01L45/1233 , H01L45/1253 , H01L45/144 , H01L45/147 , H01L45/16 , H01L45/1675
摘要： According to one embodiment, an information recording and reproducing device includes a first layer, a second layer and a recording layer. The recording layer is provided between the first and second layers and is capable of reversibly transitioning between a first state and a second state with a resistance higher than in the first state. One of the first and second layers includes a resistivity distribution layer perpendicular to a stacking direction of the first and second layers, and the recording layer. The resistivity distribution layer includes a low and a high resistivity portion. Resistivity of the high resistivity portion is higher than resistivity of the low resistivity portion. The low resistivity portion contains a transition element identical to a transition element contained in the high resistivity portion.
摘要翻译：根据一个实施例，信息记录和再现装置包括第一层，第二层和记录层。记录层设置在第一层和第二层之间，并且能够以比第一状态高的电阻在第一状态和第二状态之间可逆地转换。第一层和第二层之一包括垂直于第一层和第二层的层叠方向的电阻率分布层和记录层。电阻率分布层包括低电阻率部分和高电阻率部分。高电阻率部分的电阻率高于低电阻率部分的电阻率。低电阻率部分包含与包含在高电阻率部分中的过渡元素相同的过渡元件。

50. 发明授权

US08018762B2 Information recording and reproducing apparatus 有权
标题翻译：信息记录和再现装置
公开(公告)号：US08018762B2
公开(公告)日：2011-09-13
申请号：US12636606
申请日：2009-12-11
申请人： Kohichi Kubo , Chikayoshi Kamata , Takayuki Tsukamoto , Shinya Aoki , Takahiro Hirai , Toshiro Hiraoka
发明人： Kohichi Kubo , Chikayoshi Kamata , Takayuki Tsukamoto , Shinya Aoki , Takahiro Hirai , Toshiro Hiraoka
IPC分类号： G11C11/00
CPC分类号： G11C13/0033 , B82Y10/00 , G11B9/04 , G11B9/149 , G11C13/0004 , G11C13/0007 , G11C13/003 , G11C16/3427 , G11C2213/53 , G11C2213/75 , H01L27/101 , H01L27/2409 , H01L27/2481 , H01L45/04 , H01L45/12 , H01L45/1233 , H01L45/126 , H01L45/147 , H01L45/1625
摘要： An information recording and reproducing apparatus, includes: a stacked structure including an electrode layer and a recording layer; a buffer layer added to the electrode layer; and a voltage application unit configured to apply a voltage to the recording layer, produce a phase change in the recording layer, and record information. The recording layer includes a first layer including a first compound having an ilmenite structure represented by AxMyX3 (0.1≦x≦1.1 and 0.75≦y≦1), the A and the M being mutually different elements, at least one selected from the A and the M being a transition element having a d orbit incompletely filled by electrons, the A being an element including at least one selected from the group consisting of Be, Mg, Fe, Co, Ni, Cu, and Zn, the M being an element including at least one selected from the group consisting of Ti, Ge, Sn, V, Cr, Mn, Fe, Co, Ni, Nb, Ta, Mo, W, Re, Ru, and Rh, the X being an element including at least one selected from the group consisting of O (oxygen) and N (nitrogen).
摘要翻译：一种信息记录和再现装置，包括：堆叠结构，包括电极层和记录层; 添加到电极层的缓冲层; 以及电压施加单元，被配置为向记录层施加电压，在记录层中产生相变，并记录信息。记录层包括第一层，其包含具有由AxMyX3（0.1＆amp; NlE; x＆nlE; 1.1和0.75＆nlE; y＆nlE; 1）表示的钛铁矿结构的第一化合物，A和M是相互不同的元素， A和M是具有未被电子填充的轨道的过渡元素，A是包括选自Be，Mg，Fe，Co，Ni，Cu和Zn中的至少一种的元素，M是包括选自由Ti，Ge，Sn，V，Cr，Mn，Fe，Co，Ni，Nb，Ta，Mo，W，Re，Ru和Rh组成的组中的至少一种的元素，X是包括选自O（氧）和N（氮）中的至少一种。

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