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41. 发明申请

US20080105890A1 Reflective electrode and compound semiconductor light emitting device including the same 有权
标题翻译：反射电极和包含该反射电极的化合物半导体发光器件
公开(公告)号：US20080105890A1
公开(公告)日：2008-05-08
申请号：US12000870
申请日：2007-12-18
申请人： Joon-seop Kwak , Tae-yeon Seong , June-o Song
发明人： Joon-seop Kwak , Tae-yeon Seong , June-o Song
IPC分类号： H01L33/00
CPC分类号： H01L33/405 , H01L33/32 , H01S5/0425 , H01S5/183
摘要： Provided are a reflective electrode and a compound semiconductor light emitting device, such as an LED or an LD, including the same. The reflective electrode, which is formed on a p-type compound semiconductor layer, includes: a first electrode layer forming an ohmic contact with the p-type compound semiconductor layer; a second electrode layer disposed on the first electrode layer and formed of transparent conductive oxide; and a third electrode layer disposed on the second electrode layer and formed of an optical reflective material.
摘要翻译：提供反射电极和化合物半导体发光器件，例如包括其的LED或LD。形成在p型化合物半导体层上的反射电极包括：与p型化合物半导体层形成欧姆接触的第一电极层; 设置在第一电极层上并由透明导电氧化物形成的第二电极层; 以及设置在第二电极层上并由光学反射材料形成的第三电极层。

42. 发明授权

US07964889B2 Nitride-based light-emitting device and method of manufacturing the same 有权
标题翻译：氮化物系发光元件及其制造方法
公开(公告)号：US07964889B2
公开(公告)日：2011-06-21
申请号：US12335845
申请日：2008-12-16
申请人： June-o Song , Tae-yeon Seong
发明人： June-o Song , Tae-yeon Seong
IPC分类号： H01L33/00
CPC分类号： H01L33/42 , H01L33/32
摘要： Provided are a nitride-based light-emitting device including a transparent electrode made of a transparent conductive oxide having a higher work function than indium tin oxide and a method of manufacturing the same. The nitride-based light-emitting device has a sequentially stacked structure of a substrate, an n-type clad layer, an active layer, a p-type clad layer, and an ohmic contact layer. The ohmic contact layer is formed as a film made of a transparent conductive oxide having a higher work function than indium tin oxide or as a film made of the transparent conductive oxide doped with a metal dopant. Therefore, ohmic contact characteristics with the p-type clad layer are enhanced, thereby ensuring excellent current-voltage characteristics. Furthermore, the high light transmittance of the transparent electrode can increase the emission efficiency of the device.
摘要翻译：提供了一种氮化物系发光器件及其制造方法，该氮化物系发光器件包括由比氧化铟锡更高的功函数的透明导电氧化物制成的透明电极。氮化物系发光器件具有基板，n型覆盖层，有源层，p型覆盖层和欧姆接触层的顺序层叠结构。欧姆接触层形成为具有比铟锡氧化物更高的功函数的透明导电氧化物或由掺杂有金属掺杂剂的透明导电氧化物制成的膜制成的膜。因此，与p型覆盖层的欧姆接触特性提高，从而确保优异的电流 - 电压特性。此外，透明电极的高透光率可以提高器件的发光效率。

43. 发明授权

US07190002B2 Flip-chip nitride light emitting device and method of manufacturing thereof 有权
标题翻译：倒装氮化物发光器件及其制造方法
公开(公告)号：US07190002B2
公开(公告)日：2007-03-13
申请号：US11016956
申请日：2004-12-21
申请人： Tae-yeon Seong , June-o Song
发明人： Tae-yeon Seong , June-o Song
IPC分类号： H01L33/00
CPC分类号： H01L33/40 , H01L21/28575 , H01L33/32
摘要： A flip-chip light emitting device and a method of manufacturing thereof are provided. The flip-chip nitride light emitting device includes a substrate, an n type clad layer, an active layer, a p type clad layer, a multi ohmic contact layer, and a reflective layer, which are stacked in this order, wherein the multi ohmic contact layer is obtained by repeatedly stacking at least one stack unit of a reforming metal layer and a transparent conductive thin film, and wherein the reforming metal layer mainly contains silver (Ag). According to the flip-chip light emitting device and the method of manufacturing thereof, since the ohmic contact characteristics associated with a p type clad layer can be improved, it is possible to increase wire bonding efficiency and yield in a packaging process. In addition, since a low non-contact resistance and a good current-voltage characteristic can be obtained, it is possible to improve light emitting efficiency and to expand life time of the flip-chip light emitting device.
摘要翻译：提供了一种倒装芯片发光器件及其制造方法。倒装氮化物发光器件包括依次堆叠的衬底，n型覆盖层，有源层，ap型覆盖层，多欧姆接触层和反射层，其中多欧姆接触通过重复堆叠重整金属层和透明导电薄膜的至少一个堆叠单元获得层，其中重整金属层主要含有银（Ag）。根据倒装芯片发光器件及其制造方法，由于能够提高与p型覆盖层相关的欧姆接触特性，所以能够提高封装工序中的引线接合效率和收率。此外，由于可以获得低的非接触电阻和良好的电流 - 电压特性，所以可以提高发光效率并延长倒装芯片发光器件的使用寿命。

44. 发明授权

US06989598B2 Thin film electrode for forming ohmic contact in light emitting diodes and laser diodes using nickel-based solid solution for manufacturing high performance gallium nitride-based optical devices, and method for fabricating the same 有权
公开(公告)号：US06989598B2
公开(公告)日：2006-01-24
申请号：US10801823
申请日：2004-03-17
申请人： June-o Song , Dong-suk Leem , Tae-yeon Seong
发明人： June-o Song , Dong-suk Leem , Tae-yeon Seong
IPC分类号： H01L29/40
CPC分类号： H01L33/40 , H01L21/28575 , H01L33/32 , H01S5/0421 , H01S5/0425 , H01S5/3054 , H01S5/32341
摘要： Disclosed herein is a technique for forming a high quality ohmic contact utilizable in the fabrication of short-wavelength light emitting diodes (LEDs) emitting blue and green visible light and ultraviolet light, and laser diodes (LDs) using a gallium nitride (GaN) semiconductor.The ohmic contact is formed by depositing a nickel (Ni)-based solid solution on top of a p-type gallium nitride semiconductor. The ohmic contact thus formed has an excellent current-voltage characteristic and a low specific contact resistance due to an increased effective carrier concentration around the surface of the gallium nitride layer, as well as a high transmittance in the short-wavelength region.

45. 发明授权

US07666693B2 Top-emitting nitride-based light emitting device and method of manufacturing the same 有权
标题翻译：顶部发射氮化物基发光器件及其制造方法
公开(公告)号：US07666693B2
公开(公告)日：2010-02-23
申请号：US12180312
申请日：2008-07-25
申请人： June-o Song , Tae-yeon Seong , Joon-seop Kwak , Woong-ki Hong
发明人： June-o Song , Tae-yeon Seong , Joon-seop Kwak , Woong-ki Hong
IPC分类号： H01L21/00
CPC分类号： H01L33/42 , H01L33/32
摘要： Provided are a top-emitting N-based light emitting device and a method of manufacturing the same. The device includes a substrate, an n-type clad layer, an active layer, a p-type clad layer, and a multi ohmic contact layer, which are sequentially stacked. The multi ohmic contact layer includes one or more stacked structures, each including a modified metal layer and a transparent conductive thin film layer, which are repetitively stacked on the p-type clad layer. The modified metal layer is formed of an Ag-based material.
摘要翻译：提供了一种顶发射N型发光器件及其制造方法。该器件包括依次层叠的衬底，n型覆盖层，有源层，p型覆盖层和多欧姆接触层。多欧姆接触层包括一个或多个堆叠结构，每个层叠结构包括重复堆叠在p型覆盖层上的改性金属层和透明导电薄膜层。改性金属层由Ag基材料形成。

46. 发明授权

US07491564B2 Flip-chip nitride light emitting device and method of manufacturing thereof 有权
标题翻译：倒装氮化物发光器件及其制造方法
公开(公告)号：US07491564B2
公开(公告)日：2009-02-17
申请号：US11698193
申请日：2007-01-26
申请人： Tae-yeon Seong , June-o Song
发明人： Tae-yeon Seong , June-o Song
IPC分类号： H01L21/00
CPC分类号： H01L33/40 , H01L21/28575 , H01L33/32
摘要： A flip-chip light emitting device and a method of manufacturing thereof are provided. The flip-chip nitride light emitting device includes a substrate, an n type clad layer, an active layer, a p type clad layer, a multi ohmic contact layer, and a reflective layer, which are stacked in this order, wherein the multi ohmic contact layer is obtained by repeatedly stacking at least one stack unit of a reforming metal layer and a transparent conductive thin film, and wherein the reforming metal layer mainly contains silver (Ag). According to the flip-chip light emitting device and the method of manufacturing thereof, since the ohmic contact characteristics associated with a p type clad layer can be improved, it is possible to increase wire bonding efficiency and yield in a packaging process. In addition, since a low non-contact resistance and a good current-voltage characteristic can be obtained, it is possible to improve light emitting efficiency and to expand life time of the flip-chip light emitting device.
摘要翻译：提供了一种倒装芯片发光器件及其制造方法。倒装氮化物发光器件包括依次堆叠的衬底，n型覆盖层，有源层，ap型覆盖层，多欧姆接触层和反射层，其中多欧姆接触通过重复堆叠重整金属层和透明导电薄膜的至少一个堆叠单元获得层，其中重整金属层主要含有银（Ag）。根据倒装芯片发光器件及其制造方法，由于能够提高与p型覆盖层相关的欧姆接触特性，所以能够提高封装工序中的引线接合效率和收率。此外，由于可以获得低的非接触电阻和良好的电流 - 电压特性，所以可以提高发光效率并延长倒装芯片发光器件的使用寿命。

47. 发明授权

US07482639B2 Nitride-based light-emitting device 有权
标题翻译：基于氮化物的发光器件
公开(公告)号：US07482639B2
公开(公告)日：2009-01-27
申请号：US10984855
申请日：2004-11-10
申请人： June-o Song , Tae-yeon Seong
发明人： June-o Song , Tae-yeon Seong
IPC分类号： H01L33/00
CPC分类号： H01L33/42 , H01L33/32
摘要： Provided are a nitride-based light-emitting device including a transparent electrode made of a transparent conductive oxide having a higher work function than indium tin oxide and a method of manufacturing the same. The nitride-based light-emitting device has a sequentially stacked structure of a substrate, an n-type clad layer, an active layer, a p-type clad layer, and an ohmic contact layer. The ohmic contact layer is formed as a film made of a transparent conductive oxide having a higher work function than indium tin oxide or as a film made of the transparent conductive oxide doped with a metal dopant. Therefore, ohmic contact characteristics with the p-type clad layer are enhanced, thereby ensuring excellent current-voltage characteristics. Furthermore, the high light transmittance of the transparent electrode can increase the emission efficiency of the device.
摘要翻译：提供了一种氮化物系发光器件及其制造方法，该氮化物系发光器件包括由比氧化铟锡更高的功函数的透明导电氧化物制成的透明电极。氮化物系发光器件具有基板，n型覆盖层，有源层，p型覆盖层和欧姆接触层的顺序层叠结构。欧姆接触层形成为具有比铟锡氧化物更高的功函数的透明导电氧化物或由掺杂有金属掺杂剂的透明导电氧化物制成的膜制成的膜。因此，与p型覆盖层的欧姆接触特性提高，从而确保优异的电流 - 电压特性。此外，透明电极的高透光率可以提高器件的发光效率。

48. 发明申请

US20080299687A1 TOP-EMITTING NITRIDE-BASED LIGHT EMITTING DEVICE AND METHOD OF MANUFACTURING THE SAME 有权
标题翻译：基于氮化物的发光装置及其制造方法
公开(公告)号：US20080299687A1
公开(公告)日：2008-12-04
申请号：US12180312
申请日：2008-07-25
申请人： June-o Song , Tae-yeon Seong , Joon-seop Kwak , Woong-ki Hong
发明人： June-o Song , Tae-yeon Seong , Joon-seop Kwak , Woong-ki Hong
IPC分类号： H01L33/00
CPC分类号： H01L33/42 , H01L33/32
摘要： Provided are a top-emitting N-based light emitting device and a method of manufacturing the same. The device includes a substrate, an n-type clad layer, an active layer, a p-type clad layer, and a multi ohmic contact layer, which are sequentially stacked. The multi ohmic contact layer includes one or more stacked structures, each including a modified metal layer and a transparent conductive thin film layer, which are repetitively stacked on the p-type clad layer. The modified metal layer is formed of an Ag-based material.
摘要翻译：提供了一种顶发射N型发光器件及其制造方法。该器件包括依次层叠的衬底，n型覆盖层，有源层，p型覆盖层和多欧姆接触层。多欧姆接触层包括一个或多个堆叠结构，每个层叠结构包括重复堆叠在p型覆盖层上的改性金属层和透明导电薄膜层。改性金属层由Ag基材料形成。

49. 发明申请

US20070122925A1 Flip-chip nitride light emitting device and method of manufacturing thereof 有权
公开(公告)号：US20070122925A1
公开(公告)日：2007-05-31
申请号：US11698193
申请日：2007-01-26
申请人： Tae-yeon Seong , June-o Song
发明人： Tae-yeon Seong , June-o Song
IPC分类号： H01L21/00
CPC分类号： H01L33/40 , H01L21/28575 , H01L33/32
摘要： A flip-chip light emitting device and a method of manufacturing thereof are provided. The flip-chip nitride light emitting device includes a substrate, an n type clad layer, an active layer, a p type clad layer, a multi ohmic contact layer, and a reflective layer, which are stacked in this order, wherein the multi ohmic contact layer is obtained by repeatedly stacking at least one stack unit of a reforming metal layer and a transparent conductive thin film, and wherein the reforming metal layer mainly contains silver (Ag). According to the flip-chip light emitting device and the method of manufacturing thereof, since the ohmic contact characteristics associated with a p type clad layer can be improved, it is possible to increase wire bonding efficiency and yield in a packaging process. In addition, since a low non-contact resistance and a good current-voltage characteristic can be obtained, it is possible to improve light emitting efficiency and to expand life time of the flip-chip light emitting device.

50. 发明申请

US20050167681A1 Electrode layer, light emitting device including the same, and method of forming the electrode layer 审中-公开
标题翻译：电极层，包括该电极层的发光器件以及形成电极层的方法
公开(公告)号：US20050167681A1
公开(公告)日：2005-08-04
申请号：US10978811
申请日：2004-11-02
申请人： Joon-seop Kwak , Ok-hyun Nam , Tae-yeon Seong , June-o Song
发明人： Joon-seop Kwak , Ok-hyun Nam , Tae-yeon Seong , June-o Song
IPC分类号： H01L21/285 , H01L29/20 , H01L29/45 , H01L33/14 , H01L33/32 , H01L33/42 , H01S5/042 , H01S5/323 , H01L29/15
CPC分类号： H01L33/42 , H01L21/28575 , H01L29/2003 , H01L29/452 , H01L33/32 , H01S5/0421 , H01S5/0425 , H01S5/32341
摘要： Provided are an electrode layer, a light emitting device including the electrode layer, and a method of forming the electrode layer. The electrode layer includes a first electrode layer and a second electrode layer, which are sequentially stacked, and the first electrode layer is formed of indium oxide added by an additive element. Also, the additive element includes at least one selected from the group consisting of Mg, Ag, Zn, Sc, Hf, Zr, Te, Se, Ta, W, Nb, Cu, Si, Ni, Co, Mo, Cr, Mn, Hg, Pr, and La.
摘要翻译：提供电极层，包括电极层的发光器件和形成电极层的方法。电极层包括依次堆叠的第一电极层和第二电极层，第一电极层由添加元素添加的氧化铟形成。此外，添加元素包括选自Mg，Ag，Zn，Sc，Hf，Zr，Te，Se，Ta，W，Nb，Cu，Si，Ni，Co，Mo，Cr，Mn中的至少一种，Hg，Pr和La。

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