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41. 发明申请

US20070290243A1 Ultrashallow photodiode using indium 有权
标题翻译：使用铟的Ultrashallow光电二极管
公开(公告)号：US20070290243A1
公开(公告)日：2007-12-20
申请号：US11892380
申请日：2007-08-22
申请人： Chandra Mouli
发明人： Chandra Mouli
IPC分类号： H01L31/062
CPC分类号： H01L31/1105 , H01L27/1463 , H01L27/14643 , H01L27/14689
摘要： The invention provides an imager having a p-n-p photodiode with an ultrashallow junction depth. A p+ junction layer of the photodiode is doped with indium to decrease transient enhanced diffusion effects, minimize fixed pattern noise and fill factor loss.
摘要翻译：本发明提供一种具有具有超浅结深度的p-n-p光电二极管的成像器。光电二极管的p +结层掺杂铟，以减少瞬时增强的扩散效应，最小化固定图案噪声和填充因子损失。

42. 发明授权

US07282409B2 Isolation structure for a memory cell using Al2O3 dielectric 有权
标题翻译：使用Al2O3电介质的存储单元的隔离结构
公开(公告)号：US07282409B2
公开(公告)日：2007-10-16
申请号：US10873226
申请日：2004-06-23
申请人： Chandra Mouli
发明人： Chandra Mouli
IPC分类号： H01L21/336
CPC分类号： H01L21/765 , H01L27/10873
摘要： The invention provides, in one exemplary embodiment, an isolation gate formed over a substrate for biasing the substrate and providing isolation between adjacent active areas of an integrated circuit structure, for example a DRAM memory cell. An aluminum oxide (Al2O3) is used as a gate dielectric, rather than a conventional gate oxide layer, to create a hole-rich accumulation region under and near the trench isolation region. Another exemplary embodiment of the invention provides an aluminum oxide layer utilized as a liner in a shallow trench isolation (STI) region to increase the effectiveness of the isolation region. The embodiments may also be used together at an isolation region.
摘要翻译：在一个示例性实施例中，本发明提供了一种形成在衬底上用于偏置衬底并在集成电路结构（例如DRAM存储器单元）的相邻有源区之间提供隔离的隔离栅。使用氧化铝（Al 2 O 3）作为栅极电介质，而不是常规的栅极氧化物层，以在沟槽隔离区域下方和附近产生富空穴的积聚区域。本发明的另一示例性实施方案提供了在浅沟槽隔离（STI）区域中用作衬垫的氧化铝层，以增加隔离区域的有效性。实施例也可以在隔离区域一起使用。

43. 发明授权

US07273797B2 Methods of forming semiconductor-on-insulator constructions 有权
标题翻译：形成绝缘体上半导体结构的方法
公开(公告)号：US07273797B2
公开(公告)日：2007-09-25
申请号：US11218201
申请日：2005-08-31
申请人： Chandra Mouli
发明人： Chandra Mouli
IPC分类号： H01L21/30
CPC分类号： H01L29/66772 , H01L29/78603 , H01L29/78684
摘要： The invention encompasses a method of forming a semiconductor-on-insulator construction. A substrate is provided. The substrate includes a semiconductor-containing layer over an insulative mass. The insulative mass comprises silicon dioxide. A band of material is formed within the insulative mass. The material comprises one or more of nitrogen argon, fluorine, bromine, chlorine, iodine and germanium.
摘要翻译：本发明包括一种形成绝缘体上半导体结构的方法。提供基板。衬底包括绝缘体上的含半导体层。绝缘体包含二氧化硅。在绝缘体内形成材料带。该材料包括氮氩，氟，溴，氯，碘和锗中的一种或多种。

44. 发明申请

US20070161142A1 Method and apparatus for providing an integrated circuit having P and N doped gates 有权
标题翻译：用于提供具有P和N掺杂栅极的集成电路的方法和装置
公开(公告)号：US20070161142A1
公开(公告)日：2007-07-12
申请号：US11327377
申请日：2006-01-09
申请人： Chandra Mouli , Kunal Parekh
发明人： Chandra Mouli , Kunal Parekh
IPC分类号： H01L21/00 , H01L21/8238 , H01L21/8234
CPC分类号： H01L21/823842 , H01L21/28202 , H01L21/823857 , H01L27/14689 , H01L29/518
摘要： A method and apparatus providing an integrated circuit having a plurality of gate stack structures having gate oxide layers with differing thicknesses and nitrogen concentrations and gate electrodes with differing conductivity types and active dopant concentrations.
摘要翻译：一种提供集成电路的方法和装置，该集成电路具有多个具有不同厚度和氮浓度的栅极氧化物层的栅叠层结构，以及具有不同导电类型和活性掺杂浓度的栅电极。

45. 发明授权

US07226803B2 Photodiode with ultra-shallow junction for high quantum efficiency CMOS image sensor and method of formation 有权
标题翻译：具有超浅结的光电二极管，用于高量子效率CMOS图像传感器和形成方法
公开(公告)号：US07226803B2
公开(公告)日：2007-06-05
申请号：US11220670
申请日：2005-09-08
申请人： Chandra Mouli , Howard E. Rhodes , Richard A. Mauritzson
发明人： Chandra Mouli , Howard E. Rhodes , Richard A. Mauritzson
IPC分类号： H01L31/101
CPC分类号： H01L27/14603 , H01L27/14609 , H01L27/1463 , H01L27/14643 , H01L27/14689 , H01L31/0352 , H01L31/101
摘要： A pinned photodiode with an ultra-shallow highly-doped surface layer of a first conductivity type and a method of formation are disclosed. The ultra-shallow highly-doped surface layer has a thickness of about 100 Angstroms to about 500 Angstroms and a dopant concentration of about 5×1017 atoms per cm3 to about 1×1019 atoms per cm3. The ultra-shallow highly-doped surface layer is formed by diffusion of ions from a doped layer into the substrate or by a plasma doping process. The ultra-shallow pinned layer is in contact with a charge collection region of a second conductivity type.
摘要翻译：公开了具有第一导电类型的超浅高掺杂表面层和形成方法的钉扎光电二极管。超浅高掺杂表面层的厚度为约100埃至约500埃，掺杂剂浓度约5×10 17原子/ cm 3至约1×10 3原子/ SUP> 19个/ cm 3原子/ cm 3。超浅高掺杂表面层通过将离子从掺杂层扩散到衬底中或通过等离子体掺杂工艺形成。超浅钉扎层与第二导电类型的电荷收集区域接触。

46. 发明授权

US07224020B2 Integrated circuit device having non-linear active area pillars 有权
标题翻译：具有非线性有源区域支柱的集成电路装置
公开(公告)号：US07224020B2
公开(公告)日：2007-05-29
申请号：US11287038
申请日：2005-11-23
申请人： Hongmei Wang , Chandra Mouli , Luan Tran
发明人： Hongmei Wang , Chandra Mouli , Luan Tran
IPC分类号： H01L29/788
CPC分类号： H01L21/84 , H01L27/0207 , H01L27/105 , H01L27/1052 , H01L27/108 , H01L27/10802 , H01L27/10826 , H01L27/10873 , H01L27/10876 , H01L27/10879 , H01L27/10891 , H01L27/1203 , H01L29/41758 , H01L29/7841 , H01L29/785 , H01L29/7854 , Y10S257/905 , Y10S257/907 , Y10S438/982
摘要： An integrated circuit device having non-linear active area pillars. More specifically, pillars are formed in a substrate such that sidewalls are exposed. The sidewalls of the pillars and the top surface of the pillars are covered with a gate oxide and a conductive layer to form a channel through the pillars. The pillars are patterned to form non-linear active area lines having angled segments. The conductive layer is patterned to form word lines that intersect the active area lines at the angled segments.
摘要翻译：具有非线性有源区域支柱的集成电路装置。更具体地，在衬底中形成支柱，使得侧壁被暴露。支柱的侧壁和柱的顶表面被栅极氧化物和导电层覆盖以形成通过柱的通道。支柱被图案化以形成具有成角度段的非线性有源面积线。导电层被图案化以形成与成角度段的有源区域线相交的字线。

47. 发明授权

US07223960B2 Image sensor, an image sensor pixel, and methods of forming the same 有权
标题翻译：图像传感器，图像传感器像素及其形成方法
公开(公告)号：US07223960B2
公开(公告)日：2007-05-29
申请号：US10725494
申请日：2003-12-03
申请人： Chandra Mouli
发明人： Chandra Mouli
IPC分类号： G01J3/50 , H01J40/14 , H01J5/16 , H01L31/00 , H01L27/00
CPC分类号： H01L27/14685 , H01L27/14609 , H01L27/14621 , H01L27/14625 , H01L27/14627 , H01L27/14636 , H01L27/14643
摘要： A semiconductor image sensor utilizing a metal mesh filter to transmit light of a specific wavelength to a photoconversion device, and method of making said image sensor. Semiconductor image sensor pixel cells using varied metal mesh filters may be arranged in a Bayer pattern for color imaging. As a result, the need for using conventional polymer color filters in image sensor applications is eliminated.
摘要翻译：利用金属网状滤光器将特定波长的光透射到光电转换装置的半导体图像传感器以及制造所述图像传感器的方法。使用各种金属网状滤波器的半导体图像传感器像素单元可以以拜耳图案布置以进行彩色成像。结果，消除了在图像传感器应用中使用常规聚合物滤色器的需要。

48. 发明申请

US20070057298A1 Pixel with strained silicon layer for improving carrier mobility and blue response in imagers 有权
标题翻译：具有应变硅层的像素，用于改善成像器中的载流子迁移率和蓝色响应
公开(公告)号：US20070057298A1
公开(公告)日：2007-03-15
申请号：US11590761
申请日：2006-11-01
申请人： Chandra Mouli
发明人： Chandra Mouli
IPC分类号： H01L31/113 , H01L21/00
CPC分类号： H01L27/14647 , H01L27/14603 , H01L27/14609 , H01L27/1461 , H01L27/14652 , H01L27/14689 , H01L31/0352 , H01L31/11
摘要： An imager having a pixel cell having an associated strained silicon layer. The strained silicon layer increases charge transfer efficiency, decreases image lag, and improves blue response in imaging devices.
摘要翻译：具有像素单元的成像器具有相关联的应变硅层。应变硅层增加电荷转移效率，降低图像滞后，并改善成像装置中的蓝色响应。

49. 发明申请

US20070040102A1 Method and apparatus providing an optical guide for an imager pixel having a ring of air-filled spaced slots around a photosensor 有权
公开(公告)号：US20070040102A1
公开(公告)日：2007-02-22
申请号：US11207804
申请日：2005-08-22
申请人： Chandra Mouli
发明人： Chandra Mouli
IPC分类号： H01L27/00 , H01L31/00
CPC分类号： H01L27/14625 , H01L27/14609 , H01L27/14621 , H01L27/14623 , H01L27/14627 , H01L27/14632 , H01L27/14643 , H01L27/14685 , H01L27/14687
摘要： A device and method to provide an optical guide of a pixel to guide incoming light onto a photosensor of the pixel and to improve the optical crosstalk immunity of an image sensor. The optical guide consists of an optically reflecting barrier formed as a trench that mitigates against optical crosstalk. The optical guide is made of an air-filled ring of spaced slots. In another embodiment, the optical guide structure can be filled with a low dielectric material with an index of refraction that is less than the index of refraction of the material used for the surrounding layers.

50. 发明申请

US20070034907A1 Image sensor with improved dynamic range and method of formation 有权
标题翻译：图像传感器具有改进的动态范围和形成方法
公开(公告)号：US20070034907A1
公开(公告)日：2007-02-15
申请号：US11583809
申请日：2006-10-20
申请人： Chandra Mouli
发明人： Chandra Mouli
IPC分类号： H01L29/768
CPC分类号： H01L27/14689 , H01L27/1463 , H01L27/14643 , H01L27/14654
摘要： Embodiments of the invention provide an image sensor having an improved dynamic range. A pixel cell comprises at least one transistor structure. The transistor structure comprises at least one semiconductor channel region, at least one gate for controlling the channel region, and first and second leads respectively coupled to a source region on one side of the at least one channel region and a drain region on an opposite side of the at least one channel region. The transistor structure has at least two threshold voltages associated with the at least one channel region, and an I-V characteristic of the transistor structure is determined at least in part by the threshold voltages.
摘要翻译：本发明的实施例提供了具有改进的动态范围的图像传感器。像素单元包括至少一个晶体管结构。晶体管结构包括至少一个半导体沟道区，用于控制沟道区的至少一个栅极和分别耦合到至少一个沟道区一侧的源极区和相对侧的漏极区的第一和第二引线的至少一个通道区域。晶体管结构具有至少两个与至少一个沟道区相关联的阈值电压，晶体管结构的I-V特性至少部分地由阈值电压确定。

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