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    • 45. 发明申请
    • Method and Apparatus for Imaging Utilizing an Ultrasonic Imaging Sensor Array
    • 使用超声成像传感器阵列成像的方法和装置
    • US20090127977A1
    • 2009-05-21
    • US12279412
    • 2007-02-14
    • Franky SoJuan Claudio Nino
    • Franky SoJuan Claudio Nino
    • H01L41/08
    • H01L27/20H01L29/4908
    • The subject invention pertains to a piezoelectric device structure for improved acoustic wave sensing and/or generation, and process for making same. The piezoelectric thin film field effect transducer can be a thin film transistor (TFT) with either a piezoelectric film gate or a composite gate having a dielectric film and a piezoelectric film. The TFT structure can be either a top gate device or a bottom gate device. In an embodiment, the piezoelectric device structure can be used to form an array of piezoelectric thin film field effect transducers. A TFT switch can drive each piezoelectric transducer in the array. The piezoelectric transducers can both generate and sense acoustic waves. In a sensing mode, a signal from an acoustic wave can be collected at a readout terminal of the piezoelectric transducer. In a generating mode, an excitation signal can be applied across the piezoelectric transducer while the switch is ‘on’.
    • 本发明涉及用于改善声波感测和/或产生的压电装置结构及其制造方法。 压电薄膜场效应传感器可以是具有压电薄膜栅极或具有电介质膜和压电薄膜的复合栅极的薄膜晶体管(TFT)。 TFT结构可以是顶栅装置或底栅装置。 在一个实施例中,压电器件结构可用于形成压电薄膜场效应传感器阵列。 TFT开关可以驱动阵列中的每个压电换能器。 压电换能器可以产生和感测声波。 在感测模式中,可以在压电换能器的读出端收集来自声波的信号。 在发电模式下,当开关处于“开”状态时,可以在压电换能器两端施加激励信号。
    • 46. 发明授权
    • Current limiting device
    • 限流装置
    • US06989806B2
    • 2006-01-24
    • US10300157
    • 2002-11-20
    • Franky SoHomer AntoniadisIan MillardVung Vo
    • Franky SoHomer AntoniadisIan MillardVung Vo
    • G09G3/32
    • G09G3/3216G09G2330/04G09G2330/10H01L27/3225H01L51/5212H01L51/5228H01L2251/568
    • An embodiment of the present invention pertains to an electronic device such as a passive matrix display, an alpha-numeric display, a detector array, or a solar cell array. The electronic device includes multiple organic optoelectronic devices and one or more of these organic optoelectronic devices are protected from shorts. Each of the one or more organic optoelectronic devices that is protected from a short has one of its electrodes coupled to a first current limiting device and optionally has another electrode coupled to a second current limiting device. Also, one of the electrodes of that organic optoelectronic device, the first current limiting device, or the second current limiting device is patterned.
    • 本发明的实施例涉及诸如无源矩阵显示器,字母数字显示器,检测器阵列或太阳能电池阵列之类的电子设备。 电子器件包括多个有机光电子器件,并且这些有机光电子器件中的一个或多个保护不受短路。 被短路保护的一个或多个有机光电子器件中的每一个都具有耦合到第一限流器件的电极中的一个,并且可选地具有耦合到第二限流器件的另一个电极。 此外,该有机光电子器件的电极之一,第一限流器件或第二限流器件被图案化。
    • 47. 发明授权
    • Voltage-source thin film transistor driver for active matrix displays
    • 用于有源矩阵显示器的电压源薄膜晶体管驱动器
    • US06747639B2
    • 2004-06-08
    • US10034603
    • 2001-12-28
    • Franky So
    • Franky So
    • G09G500
    • G09G3/3258G09G2300/0465G09G2300/0819G09G2300/0842G09G2320/0233G09G2320/043G09G2330/021
    • A driver circuit for an active matrix display is disclosed wherein said driver circuit comprises a first transistor, said first transistor comprising a source, a drain and a gate; a storage capacitor, said storage capacitor comprising a terminal, said terminal connected to one line, said one line comprised of a group of said source and said drain of said first transistor; a second transistor, said second transistor comprising a source, a drain and gate, wherein said gate is connected to said terminal of said storage transistor; wherein said drain and said source of said second transistor are connected to one of group, said group comprising a power source and a pixel element respectively; and further wherein storage capacitor is chargeable to sufficiently high voltage to operate said second transistor in its linear region of operation.
    • 公开了一种用于有源矩阵显示器的驱动器电路,其中所述驱动器电路包括第一晶体管,所述第一晶体管包括源极,漏极和栅极; 存储电容器,所述存储电容器包括端子,所述端子连接到一条线,所述一条线由所述第一晶体管的所述源极和所述漏极组成; 第二晶体管,所述第二晶体管包括源极,漏极和栅极,其中所述栅极连接到所述存储晶体管的所述端子; 其中所述第二晶体管的所述漏极和源极分别连接到组中的一个,所述组分别包括电源和像素元件; 此外,其中存储电容器可充电到足够高的电压以在其线性操作区域中操作所述第二晶体管。