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41. 发明授权

US08691628B2 Method of manufacturing semiconductor device, manufacturing program, and manufacturing apparatus 有权
标题翻译：制造半导体装置的方法，制造程序和制造装置
公开(公告)号：US08691628B2
公开(公告)日：2014-04-08
申请号：US13226152
申请日：2011-09-06
申请人： Yasuo Tane , Yukio Katamura , Atsushi Yoshimura , Fumihiro Iwami
发明人： Yasuo Tane , Yukio Katamura , Atsushi Yoshimura , Fumihiro Iwami
IPC分类号： H01L21/00
CPC分类号： H01L25/50 , H01L21/6836 , H01L21/78 , H01L23/3121 , H01L24/27 , H01L24/29 , H01L24/32 , H01L24/33 , H01L24/45 , H01L24/48 , H01L24/73 , H01L24/743 , H01L24/83 , H01L24/85 , H01L24/92 , H01L24/93 , H01L25/0657 , H01L2221/68327 , H01L2224/27312 , H01L2224/27848 , H01L2224/27901 , H01L2224/29016 , H01L2224/29017 , H01L2224/29018 , H01L2224/32014 , H01L2224/32057 , H01L2224/32059 , H01L2224/32145 , H01L2224/32225 , H01L2224/33181 , H01L2224/33183 , H01L2224/451 , H01L2224/48091 , H01L2224/48227 , H01L2224/73215 , H01L2224/73265 , H01L2224/83 , H01L2224/85 , H01L2224/92247 , H01L2224/93 , H01L2224/94 , H01L2225/0651 , H01L2225/06555 , H01L2225/06562 , H01L2225/06593 , H01L2924/00014 , H01L2924/01005 , H01L2924/01006 , H01L2924/01033 , H01L2924/01057 , H01L2924/181 , H01L2924/00012 , H01L2224/27 , H01L2924/00 , H01L2224/05599
摘要： According to one embodiment, a method of manufacturing a semiconductor device, a bonding layer is formed on a first surface of a chip region of a semiconductor wafer. Semiconductor chips are singulated along a dicing region. The semiconductor chips are stacked stepwise via the bonding layer. In formation of the bonding layer of the semiconductor chip, in at least a part of a first region of the first surface not in contact with the other semiconductor chip in a stacked state, a projected section where the bonding layer is formed thicker than the bonding layer in a second region that is in contact with the other semiconductor chip is provided.
摘要翻译：根据一个实施例，制造半导体器件的方法，在半导体晶片的芯片区域的第一表面上形成接合层。半导体芯片沿切割区域分割。半导体芯片经由接合层逐级层叠。在半导体芯片的接合层的形成中，在层叠状态的第一面的第一区域的第一区域与其他半导体芯片不接触的情况下，形成接合层的突出部比形成提供与另一半导体芯片接触的第二区域中的层。

42. 发明授权

US08633602B2 Semiconductor device, and method and apparatus for manufacturing the same 有权
标题翻译：半导体装置及其制造方法和装置
公开(公告)号：US08633602B2
公开(公告)日：2014-01-21
申请号：US13421126
申请日：2012-03-15
申请人： Nobuhito Suzuya , Atsushi Yoshimura , Hideko Mukaida
发明人： Nobuhito Suzuya , Atsushi Yoshimura , Hideko Mukaida
IPC分类号： H01L21/00 , H01L23/29
CPC分类号： H01L23/3121 , H01L21/565 , H01L23/295 , H01L23/3171 , H01L25/0657 , H01L2224/48145 , H01L2224/48227 , H01L2225/06506 , H01L2225/0651 , H01L2225/06562 , H01L2924/00012
摘要： According to one embodiment, a manufacturing method of a semiconductor device is disclosed. The method includes: stacking and adhering a second semiconductor chip on a first semiconductor chip via an adhesive layer; adjusting at least one of an elasticity modulus of the adhesive layer, a sink amount of the adhesive layer, a thickness of a protective film at a surface of the first chip, and an elasticity modulus of the protective film such that “y” in a following formula is 70 or less; and sealing the chips by a molding resin with filler particles. y=74.7−82.7a1+273.2a2−9882a3+65.8a4 a1: a logarithm of the modulus of elasticity [MPa] of the adhesive layer a2: the sink amount [mm] of the adhesive layer a3: the thickness [mm] of the protective film a4: a logarithm of the modulus of elasticity [MPa] of the protective film.
摘要翻译：根据一个实施例，公开了一种半导体器件的制造方法。该方法包括：通过粘合剂层将第二半导体芯片堆叠并粘附在第一半导体芯片上; 调整粘合剂层的弹性模量，粘合剂层的沉降量，第一芯片的表面处的保护膜的厚度和保护膜的弹性模量中的至少一个，使得在以下公式为70以下; 并通过具有填料颗粒的模制树脂密封碎屑。 y = 74.7-82.7a1 + 273.2a2-9882a3 + 65.8a4 a1：粘合剂层的弹性模量[MPa]的对数a2：粘合剂层的吸收量[mm] a3：厚度[mm] 保护膜a4：保护膜的弹性模量[MPa]的对数。

43. 发明授权

US08506102B2 Indicator and display apparatus 有权
标题翻译：指示器和显示装置
公开(公告)号：US08506102B2
公开(公告)日：2013-08-13
申请号：US13064471
申请日：2011-03-28
申请人： Haruyoshi Ono , Atsushi Yoshimura
发明人： Haruyoshi Ono , Atsushi Yoshimura
IPC分类号： F01P11/16
CPC分类号： B60K37/02 , B60K2350/1064 , B60K2350/408 , G01D13/265
摘要： The present invention is to provide a lightweight indicator, which suppresses a backlash between a light guide portion and a light source, and a display apparatus including the indicator. The pointer includes a base portion disposed rearward of a display device and fixed to a rotation axle of a motor disposed rearward of the base portion, and extending radially from the rotation axle; a board fixed on a front face of the base portion; a light source mounted on a rear face of the board for radially outwardly emitting a light; and a light guide portion. The light guide portion is integrally formed with a first member radially outwardly extending and securely mounted on the base portion, an inward end thereof facing the light source, a second member upstanding forwardly from an outward end of the first member, a third member extending radially inwardly from an upper end of the second member, a fourth member upstanding forwardly from an inward end of the third member, and a pointer portion extending radially outwardly from an upper end of the fourth member.
摘要翻译：本发明提供一种抑制导光部和光源之间的间隙的轻量化指示器和包括该指示器的显示装置。指示器包括设置在显示装置的后方的基部，并且固定到设置在基部的后方并从旋转轴径向延伸的马达的旋转轴; 固定在所述基部的前表面上的板; 安装在所述板的后表面上用于径向向外发射光的光源; 和导光部。光导部分与径向向外延伸并牢固地安装在基部上的第一部件一体地形成，其面向光源的内端，从第一部件的外端向前直立的第二部件，径向延伸的第三部件从第二构件的上端向内延伸的第四构件从第三构件的内端向前突出，以及从第四构件的上端径向向外延伸的指针部。

44. 发明授权

US08268673B2 Stacked electronic component and manufacturing method thereof 有权
标题翻译：堆叠电子元件及其制造方法
公开(公告)号：US08268673B2
公开(公告)日：2012-09-18
申请号：US13137097
申请日：2011-07-20
申请人： Atsushi Yoshimura , Naoyuki Komuta , Hideo Numata
发明人： Atsushi Yoshimura , Naoyuki Komuta , Hideo Numata
IPC分类号： H01L21/00 , H01L23/48 , H01L23/52 , H01L29/40 , H01L23/02 , H01L23/14 , H01L23/34 , H01L23/29 , H01L25/11 , H01L23/31
CPC分类号： H01L25/0657 , H01L23/3107 , H01L23/49575 , H01L24/33 , H01L24/48 , H01L24/49 , H01L24/73 , H01L25/03 , H01L2224/32145 , H01L2224/32225 , H01L2224/32245 , H01L2224/48091 , H01L2224/48227 , H01L2224/48247 , H01L2224/49 , H01L2224/73265 , H01L2224/92247 , H01L2225/0651 , H01L2225/06555 , H01L2225/06562 , H01L2225/06575 , H01L2225/06586 , H01L2924/00014 , H01L2924/09701 , H01L2924/15311 , H01L2924/181 , H01L2924/19107 , H01L2924/00 , H01L2924/00012 , H01L2224/45099 , H01L2224/05599
摘要： A stacked electronic component comprises a first electronic component adhered on a substrate via a first adhesive layer, and a second electronic component adhered by using a second adhesive layer thereon. The second adhesive layer has a two-layer structure formed by a same material and having different modulus of elasticity. The second adhesive layer of the two-layer structure has a first layer disposed at the first electronic component side and a second layer disposed at the second electronic component side. The first layer softens or melts at an adhesive temperature. The second layer maintains a layered shape at the adhesive temperature. According to the stacked electronic component, occurrences of an insulation failure and a short circuiting are prevented, and in addition, a peeling failure between the electronic components, an increase of a manufacturing cost, and so on, can be suppressed.
摘要翻译：堆叠的电子部件包括经由第一粘合剂层粘附在基板上的第一电子部件和通过使用第二粘合层粘附的第二电子部件。第二粘合剂层具有由相同材料形成且具有不同弹性模量的两层结构。双层结构的第二粘合剂层具有设置在第一电子部件侧的第一层和设置在第二电子部件侧的第二层。第一层在粘合剂温度下软化或熔化。第二层在粘合剂温度下保持层状。根据堆叠的电子元件，可以防止绝缘故障和短路的发生，并且还可以抑制电子部件之间的剥离故障，制造成本的增加等。

45. 发明授权

US08227296B2 Stacked semiconductor device 有权
标题翻译：堆叠半导体器件
公开(公告)号：US08227296B2
公开(公告)日：2012-07-24
申请号：US13067839
申请日：2011-06-29
申请人： Atsushi Yoshimura , Hideko Mukaida
发明人： Atsushi Yoshimura , Hideko Mukaida
IPC分类号： H01L21/00
CPC分类号： H01L25/0657 , H01L24/73 , H01L2224/32145 , H01L2224/32225 , H01L2224/45015 , H01L2224/48091 , H01L2224/48227 , H01L2224/73265 , H01L2225/0651 , H01L2924/09701 , H01L2924/10253 , H01L2924/15311 , H01L2924/181 , H01L2924/00014 , H01L2924/00 , H01L2924/00012 , H01L2924/20752
摘要： A stacked semiconductor device includes a first semiconductor element bonded on a circuit base. The first semiconductor element is electrically connected to a connection part of the circuit base via a first bonding wire. A second semiconductor element is bonded on the first semiconductor element via a second adhesive layer with a thickness of 50 μm or more. The second adhesive layer is formed of an insulating resin layer whose glass transition temperature is 135° C. or higher and whose coefficient of linear expansion at a temperature equal to or lower than the glass transition temperature is 100 ppm or less.
摘要翻译：叠层半导体器件包括接合在电路基底上的第一半导体元件。第一半导体元件经由第一接合线电连接到电路基座的连接部。第二半导体元件经由厚度为50μm以上的第二粘合剂层接合在第一半导体元件上。第二粘合层由玻璃化转变温度为135℃以上的绝缘树脂层形成，玻璃化转变温度以下的温度下的线膨胀系数为100ppm以下。

46. 发明申请

US20120052627A1 METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICES 有权
标题翻译：制造半导体器件的方法
公开(公告)号：US20120052627A1
公开(公告)日：2012-03-01
申请号：US13052144
申请日：2011-03-21
申请人： Yukio KATAMURA , Yasuo Tane , Atsushi Yoshimura , Fumihiro Iwami
发明人： Yukio KATAMURA , Yasuo Tane , Atsushi Yoshimura , Fumihiro Iwami
IPC分类号： H01L21/50
CPC分类号： H01L25/0657 , H01L21/563 , H01L24/06 , H01L24/27 , H01L24/29 , H01L24/32 , H01L24/48 , H01L24/73 , H01L24/83 , H01L24/92 , H01L25/50 , H01L2224/05554 , H01L2224/06155 , H01L2224/27312 , H01L2224/27418 , H01L2224/27848 , H01L2224/29 , H01L2224/29011 , H01L2224/29035 , H01L2224/29036 , H01L2224/2919 , H01L2224/2929 , H01L2224/29298 , H01L2224/32145 , H01L2224/32225 , H01L2224/48227 , H01L2224/73265 , H01L2224/83051 , H01L2224/83191 , H01L2224/83193 , H01L2224/92247 , H01L2225/06562 , H01L2924/00013 , H01L2924/00014 , H01L2924/01005 , H01L2924/01006 , H01L2924/01033 , H01L2924/01074 , H01L2924/01082 , H01L2924/0665 , H01L2924/181 , H01L2924/00 , H01L2224/29099 , H01L2224/29199 , H01L2224/29299 , H01L2224/45099 , H01L2224/45015 , H01L2924/207
摘要： According to one embodiment, a method is disclosed for manufacturing a semiconductor device including a semiconductor chip having electrode pads formed on a first major surface and a bonding layer provided on a second major surface, and a substrate having the semiconductor chip mounted on the substrate. The manufacturing method can include applying a fillet-forming material to a portion contacting an outer edge of the second major surface of the semiconductor chip on a front face of the substrate. The method can include bonding the second major surface of the semiconductor chip to the substrate via the bonding layer.
摘要翻译：根据一个实施例，公开了一种用于制造半导体器件的方法，该半导体器件包括具有形成在第一主表面上的电极焊盘和设置在第二主表面上的接合层的半导体芯片，以及具有安装在该衬底上的半导体芯片的衬底。制造方法可以包括在基板的前表面上将接合成形材料的半导体芯片的第二主表面的外边缘接触的部分。该方法可以包括通过接合层将半导体芯片的第二主表面接合到衬底。

47. 发明授权

US08008763B2 Stacked electronic component and manufacturing method thereof 有权
标题翻译：堆叠电子元件及其制造方法
公开(公告)号：US08008763B2
公开(公告)日：2011-08-30
申请号：US12011253
申请日：2008-01-25
申请人： Atsushi Yoshimura , Naoyuki Komuta , Hideo Numata
发明人： Atsushi Yoshimura , Naoyuki Komuta , Hideo Numata
IPC分类号： H01L23/02 , H01L23/34 , H01L23/06 , H01L23/04 , H01L23/12 , H01L23/48 , H01L23/52 , H01L23/40
CPC分类号： H01L25/0657 , H01L23/3107 , H01L23/49575 , H01L24/33 , H01L24/48 , H01L24/49 , H01L24/73 , H01L25/03 , H01L2224/32145 , H01L2224/32225 , H01L2224/32245 , H01L2224/48091 , H01L2224/48227 , H01L2224/48247 , H01L2224/49 , H01L2224/73265 , H01L2224/92247 , H01L2225/0651 , H01L2225/06555 , H01L2225/06562 , H01L2225/06575 , H01L2225/06586 , H01L2924/00014 , H01L2924/09701 , H01L2924/15311 , H01L2924/181 , H01L2924/19107 , H01L2924/00 , H01L2924/00012 , H01L2224/45099 , H01L2224/05599
摘要： A stacked electronic component comprises a first electronic component adhered on a substrate via a first adhesive layer, and a second electronic component adhered by using a second adhesive layer thereon. The second adhesive layer has a two-layer structure formed by a same material and having different modulus of elasticity. The second adhesive layer of the two-layer structure has a first layer disposed at the first electronic component side and a second layer disposed at the second electronic component side. The first layer softens or melts at an adhesive temperature. The second layer maintains a layered shape at the adhesive temperature. According to the stacked electronic component, occurrences of an insulation failure and a short circuiting are prevented, and in addition, a peeling failure between the electronic components, an increase of a manufacturing cost, and so on, can be suppressed.
摘要翻译：堆叠的电子部件包括经由第一粘合剂层粘附在基板上的第一电子部件和通过使用第二粘合层粘附的第二电子部件。第二粘合剂层具有由相同材料形成且具有不同弹性模量的两层结构。双层结构的第二粘合剂层具有设置在第一电子部件侧的第一层和设置在第二电子部件侧的第二层。第一层在粘合剂温度下软化或熔化。第二层在粘合剂温度下保持层状。根据堆叠的电子元件，可以防止绝缘故障和短路的发生，并且还可以抑制电子部件之间的剥离故障，制造成本的增加等。

48. 发明授权

US07994620B2 Stacked semiconductor device 有权
公开(公告)号：US07994620B2
公开(公告)日：2011-08-09
申请号：US11724303
申请日：2007-03-15
申请人： Atsushi Yoshimura , Hideko Mukaida
发明人： Atsushi Yoshimura , Hideko Mukaida
IPC分类号： H01L23/02
CPC分类号： H01L25/0657 , H01L24/73 , H01L2224/32145 , H01L2224/32225 , H01L2224/45015 , H01L2224/48091 , H01L2224/48227 , H01L2224/73265 , H01L2225/0651 , H01L2924/09701 , H01L2924/10253 , H01L2924/15311 , H01L2924/181 , H01L2924/00014 , H01L2924/00 , H01L2924/00012 , H01L2924/20752
摘要： A stacked semiconductor device includes a first semiconductor element bonded on a circuit base. The first semiconductor element is electrically connected to a connection part of the circuit base via a first bonding wire. A second semiconductor element is bonded on the first semiconductor element via a second adhesive layer with a thickness of 50 μm or more. The second adhesive layer is formed of an insulating resin layer whose glass transition temperature is 135° C. or higher and whose coefficient of linear expansion at a temperature equal to or lower than the glass transition temperature is 100 ppm or less.

49. 发明授权

US07871856B2 Method and apparatus for manufacturing stacked-type semiconductor device 失效
标题翻译：叠层型半导体器件的制造方法和装置
公开(公告)号：US07871856B2
公开(公告)日：2011-01-18
申请号：US11200037
申请日：2005-08-10
申请人： Atsushi Yoshimura
发明人： Atsushi Yoshimura
IPC分类号： H01L21/44
CPC分类号： H01L25/50 , H01L24/73 , H01L24/97 , H01L25/0657 , H01L2224/32145 , H01L2224/32225 , H01L2224/48091 , H01L2224/48225 , H01L2224/48227 , H01L2224/73265 , H01L2224/97 , H01L2225/0651 , H01L2225/06575 , H01L2225/06582 , H01L2924/01005 , H01L2924/01006 , H01L2924/01033 , H01L2924/15311 , H01L2924/00014 , H01L2224/85 , H01L2224/83 , H01L2924/00 , H01L2924/00012 , H01L2224/92247
摘要： A method of manufacturing a stacked-type semiconductor device, comprises: arranging a plurality of stacked chips obtained by stacking semiconductor chips on a plurality of stages on a support substrate; connecting a semiconductor chip of each stage in each stacked chip and the support substrate by wire while performing heating in units of stacked chips; performing plastic molding of each stacked chip; and separating the stacked chips from each other; an apparatus for manufacturing a stacked-type semiconductor device, comprising divided heater blocks formed under a support substrate on which a plurality of stacked chips obtained by stacking a plurality of semiconductor chips are arranged, the divided heater blocks being formed with respect to the stacked chips, and a heating device to selectively transmit heat to a stacked chip subjected to a wire bonding.
摘要翻译：一种层叠型半导体器件的制造方法，其特征在于，具有：将多个堆叠的芯片配置在支撑基板上的多个级上堆叠半导体芯片而得到的堆叠芯片; 在堆叠的芯片的单元中进行加热时，通过线将每个堆叠的芯片中的每个级的半导体芯片和支撑基板连接; 执行每个堆叠芯片的塑料模制; 并将堆叠的芯片彼此分离; 一种层叠型半导体器件的制造装置，其特征在于，具有形成在支撑基板上的分割加热器块，在所述支撑基板上配置有通过堆叠多个半导体芯片而获得的多个堆叠的芯片，所述分割的加热器块相对于所述堆叠的芯片形成以及加热装置，用于选择性地将热传递到经过引线接合的堆叠芯片。

50. 发明申请

US20100224705A1 FUEL INJECTION VALVE 有权
标题翻译：燃油喷射阀
公开(公告)号：US20100224705A1
公开(公告)日：2010-09-09
申请号：US12093178
申请日：2007-03-27
申请人： Naoya Hashii , Keishi Nakano , Tsuyoshi Munezane , Atsushi Yoshimura , Manabu Miyaki
发明人： Naoya Hashii , Keishi Nakano , Tsuyoshi Munezane , Atsushi Yoshimura , Manabu Miyaki
IPC分类号： B05B1/30
CPC分类号： F02M61/1853 , F02M51/0682 , F02M2200/8084 , Y10S239/90
摘要： This invention serves to suppress the deterioration of oil tightness of a valve after welding without any change in the direction of fuel injection even with deformation of a convex portion after welding of an injection opening plate to a valve seat, as well as without any variation in the direction of fuel injection due to welding variation. In this invention, in a fuel injection valve which has a valve body for opening and closing a valve seat, and receives an operation signal from a control unit to operate the valve body so that fuel is injected from a plurality of injection holes formed in an injection hole plate welded through a welded portion to a downstream side of the valve seat while passing through a gap between the valve body and the valve seat, said injection hole plate is formed at its central portion with a convex portion which is substantially axisymmetric with respect to a valve seat axis and which has a circular-arc shaped cross section, and said welded portion is also substantially axisymmetric with respect to said valve seat axis. In addition, inlet portions of said injection holes are disposed in an injection hole arrangement surface diametrically outside of said convex portion and diametrically inside of a valve seat opening inner wall which is a minimum inside diameter of said valve seat, and said injection hole arrangement surface is coplanar with a surface having said welded portion.
摘要翻译：本发明用于抑制即使在将注射开口板焊接到阀座上的凸部的变形之后，也不会发生任何变化，可以抑制焊接后的阀的油封性的劣化，同时燃料喷射方向没有任何变化由于焊接变化导致燃油喷射的方向。在本发明中，在具有用于打开和关闭阀座的阀体的燃料喷射阀中，并接收来自控制单元的操作信号以操作阀体，使得从形成在阀座中的多个喷射孔喷射燃料喷射孔板在通过阀体和阀座之间的间隙的同时通过焊接部分焊接到阀座的下游侧，所述喷射孔板在其中心部分处形成有凸部，该凸部基本上相对于轴对称到阀座轴线并且具有圆弧形横截面，并且所述焊接部分也相对于所述阀座轴线基本上是轴对称的。此外，所述喷射孔的入口部分设置在所述凸部的径向外侧的喷射孔配置表面中，并且直径位于所述阀座的最小内径的阀座开口内壁的内侧，并且所述喷射孔装置表面与具有所述焊接部分的表面共面。

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