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    • 41. 发明申请
    • ARITHMETIC DEVICE
    • 算术设备
    • US20120131078A1
    • 2012-05-24
    • US13361074
    • 2012-01-30
    • Hideo ShimizuYuichi KomanoKoichi FujisakiShinichi Kawamura
    • Hideo ShimizuYuichi KomanoKoichi FujisakiShinichi Kawamura
    • G06F7/523G06F7/50G06F5/01G06F7/48
    • G06F7/728
    • According to one embodiment, a first shift amount calculation unit counts the number of continuous zeros from a less significant bit toward a more significant bit of an intermediate result of a computation of Montgomery multiplication result z and calculates a first shift amount. A second shift amount calculation unit counts the number of continuous zeros from a less significant bit toward a more significant bit of redundant-binary-represented integer x and calculates a second shift amount. An addition/subtraction unit calculates the intermediate result by adding/subtracting, with respect to the intermediate result which has been bit-shifted by the first shift amount, the integer p, and the integer y which has been bit-shifted by the second shift amount. An output unit outputs, as the Montgomery multiplication result z, the intermediate result when the sum of the first shift amounts is equal to the number of bits of the integer p.
    • 根据一个实施例,第一移位量计算单元从蒙哥马利乘积结果z的计算的中间结果的较低有效位向更高有效位对连续零的数进行计数,并计算第一移位量。 第二移位量计算单元将来自冗余二进制表示的整数x的较低有效位朝向更高有效位的连续零的数目计数,并计算第二移位量。 加法/减法单元相对于已被移位了第一移位量的中间结果,整数p和已被位移第二移位的整数y加/减来计算中间结果 量。 当第一移位量的和等于整数p的位数时,输出单元输出作为蒙哥马利乘数结果z的中间结果。
    • 48. 发明授权
    • Method of preparing a poly-crystalline silicon film
    • 多晶硅膜的制备方法
    • US6099918A
    • 2000-08-08
    • US152256
    • 1998-09-14
    • Shinichi Kawamura
    • Shinichi Kawamura
    • G02F1/136C23C16/24C23C16/56G02F1/1368H01L21/20H01L21/205
    • H01L21/2022C23C16/24C23C16/56
    • A method of preparing a poly-crystalline silicon (p-Si) film is provided with efficient dehydrogenation treatment of an amorphous silicon (a-Si) film deposited by a plasma enhanced chemical deposition (PECVD) process. A substrate is received in a process chamber of a PECVD system. A plasma discharge takes place to deposit an a-Si film on the substrate in an atmosphere in which reactive and carrier gases are supplied to the chamber. The substrate is still left in the chamber to carry out dehydrogenation of the a-Si film after the same is deposited on the substrate. While the carrier gas is supplied to the chamber during the leaving period of time, the pressure of the chamber is set higher than during the deposition step. After the dehydrogenation treatment, the substrate is taken out from the chamber. XeCl excimer laser beams are then irradiated to the a-Si film to change it into a p-Si film.
    • 对通过等离子体增强化学沉积(PECVD)工艺沉积的非晶硅(a-Si)膜进行有效的脱氢处理,提供了制备多晶硅(p-Si)膜的方法。 基板被接收在PECVD系统的处理室中。 发生等离子体放电,在其中将反应性和载气供应到室中的气氛中将a-Si膜沉积在衬底上。 衬底仍然留在腔室中,以在沉积在衬底上之后进行a-Si膜的脱氢。 当在离开时间段期间将载气供应到室时,室的压力被设定为高于沉积步骤期间的压力。 脱氢处理后,将基板从室中取出。 然后将XeCl准分子激光束照射到a-Si膜上以将其改变成p-Si膜。
    • 49. 发明授权
    • Method of manufacturing liquid crystal display device
    • 制造液晶显示装置的方法
    • US5858807A
    • 1999-01-12
    • US702015
    • 1996-08-23
    • Shinichi Kawamura
    • Shinichi Kawamura
    • G02F1/1362H01L21/20H01L21/00
    • G02F1/13454H01L21/2026Y10S148/091
    • A method of manufacturing a liquid crystal display device, which comprises the steps of forming an amorphous silicon layer on a substrate, and irradiating, by way of scanning, a linear energy beam onto the amorphous silicon layer, thereby converting an irradiated portion of the an amorphous silicon layer into a polycrystalline silicon layer. The irradiation and scanning of the linear energy beam are performed plural times while shifting the scanning of the linear energy beam so as to allow the irradiation of the linear energy beam to cover every region of the amorphous silicon layer that is desired to be converted into a polycrystalline silicon layer. The scanning of linear energy beam is performed in such a manner that an edge portion of one irradiated region is overlapped by an edge portion of the next neighboring irradiated region in a plurality times of scanning of the linear energy beam thereby forming an overlapped region, and that a boundary to be formed between the overlapped region and non-overlapped region becomes non-linear in shape.
    • 一种制造液晶显示装置的方法,包括以下步骤:在衬底上形成非晶硅层,并通过扫描将线性能量束照射到非晶硅层上,从而将照射的部分 非晶硅层形成多晶硅层。 线性能量束的照射和扫描被执行多次,同时移动线性能量束的扫描,以便允许线性能量束的照射覆盖期望转换为非晶硅层的非晶硅层的每个区域 多晶硅层。 以线性能量束的多次扫描的方式,使得一个照射区域的边缘部分被下一个相邻照射区域的边缘部分重叠,从而形成重叠区域,从而进行线性能量束的扫描, 在重叠区域和非重叠区域之间形成的边界在形状上变得非线性。