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41. 发明申请

US20080099774A1 Method for high-volume production of light emitting diodes with attached lenses 审中-公开
标题翻译：大容量生产附有镜片的发光二极管的方法
公开(公告)号：US20080099774A1
公开(公告)日：2008-05-01
申请号：US11588501
申请日：2006-10-27
申请人： Michael R. T. Tan , Gary R. Trott
发明人： Michael R. T. Tan , Gary R. Trott
IPC分类号： H01L33/00
CPC分类号： H01L33/58 , H01L2933/0058 , Y10T156/10
摘要： A method for high-volume production of light emitting diodes with attached lenses involves providing pre-fabricated lenses, wherein the pre-fabricated lenses are held by a common transfer structure, simultaneously attaching the pre-fabricated lenses to respective ones of light emitting diodes, and releasing the pre-fabricated lenses from the common transfer structure. In an embodiment, the light emitting diodes are distributed in a pattern on a common substrate and the common transfer structure is configured to hold the pre-fabricated lenses in a pattern that corresponds to the pattern of the light emitting diodes on the common substrate. Further, to attach the pre-fabricated lenses to the light emitting diodes, the common transfer structure is positioned relative to the common substrate such that the pre-fabricated lenses are aligned with the light emitting diodes.
摘要翻译：用于大量生产具有附加透镜的发光二极管的方法涉及提供预制透镜，其中预制透镜由公共转印结构保持，同时将预制透镜附接到相应的发光二极管，并且从公共转移结构释放预制镜片。在一个实施例中，发光二极管以公共衬底上的图案分布，并且公共传输结构被配置为将预制透镜保持在与公共衬底上的发光二极管的图案相对应的图案中。此外，为了将预制透镜附接到发光二极管，公共转印结构相对于公共基板定位，使得预制透镜与发光二极管对准。

42. 发明授权

US07269196B2 Method for increasing maximum modulation speed of a light emitting device, and light emitting device with increased maximum modulation speed and quantum well structure thereof 失效
标题翻译：用于增加发光器件的最大调制速度的方法，以及具有增加的最大调制速度的发光器件及其量子阱结构
公开(公告)号：US07269196B2
公开(公告)日：2007-09-11
申请号：US10885952
申请日：2004-07-06
申请人： Ashish Tandon , Michael R. T. Tan , Ying-Lan Chang
发明人： Ashish Tandon , Michael R. T. Tan , Ying-Lan Chang
IPC分类号： H01S5/00
CPC分类号： B82Y20/00 , H01S5/18358 , H01S5/2009 , H01S5/34313 , H01S5/34346 , H01S5/34353 , H01S5/34386
摘要： The method comprises forming barrier layers of AlxGa1-xAs, forming a quantum well layer of InGaAs between the barrier layers, and forming an interfacial layer between the quantum well layer and each of the barrier layers.
摘要翻译：该方法包括形成Al x Ga 1-x As的阻挡层，在阻挡层之间形成InGaAs的量子阱层，并在量子阱之间形成界面层层和每个阻挡层。

43. 发明授权

US06813295B2 Asymmetric InGaAsN vertical cavity surface emitting lasers 失效
标题翻译：不对称InGaAsN垂直腔表面发射激光器
公开(公告)号：US06813295B2
公开(公告)日：2004-11-02
申请号：US10106678
申请日：2002-03-25
申请人： Tetsuya Takeuchi , Ying-Lan Chang , David P. Bour , Michael H. Leary , Michael R. T. Tan
发明人： Tetsuya Takeuchi , Ying-Lan Chang , David P. Bour , Michael H. Leary , Michael R. T. Tan
IPC分类号： H01S500
CPC分类号： H01S5/18313 , H01S5/3095 , H01S5/32366 , H01S2304/04
摘要： Various asymmetric InGaAsN VCSEL structures that are made using an MOCVD process are presented. Use of the asymmetric structure effectively eliminates aluminum contamination of the quantum well active region.
摘要翻译：提出了使用MOCVD工艺制造的各种非对称InGaAsN VCSEL结构。使用不对称结构有效地消除了量子阱活性区域的铝污染。

44. 发明授权

US06647050B2 Flip-chip assembly for optically-pumped lasers 有权
标题翻译：用于光泵浦激光器的倒装芯片组件
公开(公告)号：US06647050B2
公开(公告)日：2003-11-11
申请号：US09954825
申请日：2001-09-18
申请人： Albert T. Yuen , Michael R. T. Tan , Dubravko Ivan Babic , Scott William Corzine
发明人： Albert T. Yuen , Michael R. T. Tan , Dubravko Ivan Babic , Scott William Corzine
IPC分类号： H01S500
CPC分类号： H01S5/18311 , H01L2224/05001 , H01L2224/05023 , H01L2224/05568 , H01L2224/05571 , H01L2224/05573 , H01L2224/16225 , H01S5/0215 , H01S5/0224 , H01S5/02272 , H01S5/041 , H01S5/426 , H01L2224/05541 , H01L2224/05005
摘要： A short-wavelength vertical cavity surface emitting laser (VCSEL) is flip-chip bonded to a long-wavelength VCSEL. The short-wavelength VCSEL is used to optically-pump the long-wavelength VCSEL. Certain embodiments of the invention can serve as optical sources for optical fiber communication systems. Methods also are provided.
摘要翻译：短波长垂直腔表面发射激光器（VCSEL）被倒装芯片结合到长波长VCSEL。短波长VCSEL用于光泵浦长波长VCSEL。本发明的某些实施例可以用作光纤通信系统的光源。还提供了方法。

45. 发明授权

US08705265B2 Ionic devices containing a membrane between layers 有权
标题翻译：在层之间含有膜的离子装置
公开(公告)号：US08705265B2
公开(公告)日：2014-04-22
申请号：US13383614
申请日：2010-04-30
申请人： Dmitri B. Strukov , Alexandre M. Bratkovski , R. Stanley Williams , Michael R. T. Tan
发明人： Dmitri B. Strukov , Alexandre M. Bratkovski , R. Stanley Williams , Michael R. T. Tan
IPC分类号： H01L45/00 , G11C11/00
CPC分类号： G02F1/1525
摘要： A device contains a first layer, a second layer; and a membrane between the first and second layers. Mobile ions are in at least one of the first and second layers, and the membrane is permeable to the ions. Interfaces of the conductive membrane with the first layer and the second layer are such that charge of a polarity of the ions collects at the interfaces.
摘要翻译：设备包含第一层，第二层; 以及第一和第二层之间的膜。移动离子在第一和第二层中的至少一个中，并且膜对离子是可渗透的。导电膜与第一层和第二层的接触使得离子的极性的电荷在界面处收集。

46. 发明授权

US07544945B2 Vertical cavity surface emitting laser (VCSEL) array laser scanner 有权
标题翻译：垂直腔表面发射激光（VCSEL）阵列激光扫描仪
公开(公告)号：US07544945B2
公开(公告)日：2009-06-09
申请号：US11347954
申请日：2006-02-06
申请人： Michael R. T. Tan , William R. Trutna, Jr. , Georgios Panotopoulos
发明人： Michael R. T. Tan , William R. Trutna, Jr. , Georgios Panotopoulos
IPC分类号： G01J5/02
CPC分类号： G01S17/936 , G01S7/4811 , G01S7/4815 , G01S17/10 , G01S17/42 , G01S17/87
摘要： Vehicle-based lidar systems and methods are disclosed using multiple lasers to provide more compact and cost-effective lidar functionality. Each laser in an array of lasers can be sequentially activated so that a corresponding optical element mounted with respect to the array of lasers produces respective interrogation beams in substantially different directions. Light from these beams is reflected by objects in a vehicle's environment, and detected so as to provide information about the objects to vehicle operators and/or passengers.
摘要翻译：公开了基于车辆的激光雷达系统和方法，其使用多个激光器来提供更紧凑且具有成本效益的激光雷达功能。激光器阵列中的每个激光器可以被顺序地激活，使得相对于激光器阵列安装的对应的光学元件在基本上不同的方向上产生相应的询问光束。来自这些梁的光被车辆的环境中的物体反射，并且被检测为向车辆操作者和/或乘客提供关于物体的信息。

47. 发明申请

US20080310852A1 Misalignment tolerant free space optical transceiver 有权
标题翻译：不对准自由空间光收发器
公开(公告)号：US20080310852A1
公开(公告)日：2008-12-18
申请号：US11820299
申请日：2007-06-18
申请人： Michael R. T. Tan , David A. Fattal , Terrel Morris
发明人： Michael R. T. Tan , David A. Fattal , Terrel Morris
IPC分类号： H04B10/00
CPC分类号： H04B10/803
摘要： In accordance with an aspect of the invention, a system has a transmitter and a receiver, where the transmitter includes a beam source and an optical element. The beam source produces a beam that represents information, and the optical element alters the beam so that the beam has a uniform intensity over a cross-sectional area. The receiver is separated from the transmitter by free space through which the beam propagates and includes an active area positioned to receive a portion of the beam that the receiver converts into a received signal. To accommodate possible misalignment, the cross-sectional area of the beam is larger than the active area by an amount that accommodates a range of misalignment of the receiver with the transmitter.
摘要翻译：根据本发明的一个方面，系统具有发射器和接收器，其中发射器包括光束源和光学元件。光束源产生表示信息的光束，并且光学元件改变光束，使得光束在横截面积上具有均匀的强度。接收机通过自由空间与发射机分离，射束通过该空间传播，并且包括被定位为接收接收机转换成接收信号的波束的一部分的有源区域。为了适应可能的未对准，波束的横截面面积大于有效区域，其量适应接收器与发射器的不对准范围。

48. 发明授权

US07443561B2 Deep quantum well electro-absorption modulator 失效
标题翻译：深量子阱电吸收调制器
公开(公告)号：US07443561B2
公开(公告)日：2008-10-28
申请号：US11148467
申请日：2005-06-08
申请人： David P. Bour , Ashish Tandon , Michael R. T. Tan
发明人： David P. Bour , Ashish Tandon , Michael R. T. Tan
IPC分类号： G02F1/03 , H01L29/06 , H01S5/00
CPC分类号： B82Y20/00 , G02F1/017 , G02F1/01725 , G02F2001/01766 , G02F2202/101 , G02F2202/102
摘要： Double well structures in electro-absorption modulators are created in quantum well active regions by embedding deep ultra thin quantum wells. The perturbation introduced by the embedded, deep ultra thin quantum well centered within a conventional quantum well lowers the confined energy state for the wavefunction in the surrounding larger well and typically results in the hole and electron distributions being more confined to the center of the conventional quantum well. The extinction ratio provided by the electro-absorption modulator is typically increased.
摘要翻译：电子吸收调制器中的双阱结构通过嵌入深超薄量子阱在量子阱活性区域中产生。以常规量子阱为中心的嵌入式，超超薄量子阱引入的扰动降低了周围较大阱中波函数的约束能态，并且通常导致空穴和电子分布更局限于常规量子的中心好。电吸收调制器提供的消光比通常增加。

49. 发明授权

US07276390B2 Long wavelength indium arsenide phosphide (InAsP) quantum well active region and method for producing same 失效
标题翻译：长波长磷化铟（InAsP）量子阱活性区及其制备方法
公开(公告)号：US07276390B2
公开(公告)日：2007-10-02
申请号：US10230895
申请日：2002-08-29
申请人： David P. Bour , Michael R. T. Tan , William H. Perez
发明人： David P. Bour , Michael R. T. Tan , William H. Perez
IPC分类号： H01L21/205
CPC分类号： B82Y20/00 , H01L21/02461 , H01L21/02463 , H01L21/02507 , H01L21/02543 , H01L21/02546 , H01L21/0262 , H01L33/0062 , H01S5/3434
摘要： An InAsP active region for a long wavelength light emitting device and a method for growing the same are disclosed. In one embodiment, the method comprises placing a substrate in an organometallic vapor phase epitaxy (OMVPE) reactor, the substrate for supporting growth of an indium arsenide phosphide (InAsP) film, forming a quantum well layer of InAsP, and forming a barrier layer adjacent the quantum well layer, where the quantum well layer and the barrier layer are formed at a temperature of less than 520 degrees C. Forming the quantum well layer and the barrier layer at a temperature of less than 520 degrees C. results in fewer dislocations by suppressing relaxation of the layers. A long wavelength active region including InAsP quantum well layers and InGaP barrier layers is also disclosed.
摘要翻译：公开了一种用于长波长发光器件的InAsP有源区及其生长方法。在一个实施方案中，该方法包括将衬底放置在有机金属气相外延（OMVPE）反应器中，该衬底用于支持砷化铟磷（InAsP）膜的生长，形成InAsP的量子阱层，并形成相邻的势垒层量子阱层，其中在低于520℃的温度下形成量子阱层和势垒层。在低于520℃的温度下形成量子阱层和阻挡层，导致较少的位错抑制层的松弛。还公开了包括InAsP量子阱层和InGaP阻挡层的长波长有源区。

50. 发明授权

US06764926B2 Method for obtaining high quality InGaAsN semiconductor devices 失效
标题翻译：用于获得高质量InGaAsN半导体器件的方法
公开(公告)号：US06764926B2
公开(公告)日：2004-07-20
申请号：US10106472
申请日：2002-03-25
申请人： Tetsuya Takeuchi , Ying-Lan Chang , David P. Bour , Michael H. Leary , Michael R. T. Tan , Andy Luan
发明人： Tetsuya Takeuchi , Ying-Lan Chang , David P. Bour , Michael H. Leary , Michael R. T. Tan , Andy Luan
IPC分类号： H01L2100
CPC分类号： C30B25/02 , C23C16/301 , C23C16/4401 , C23C16/4405 , C30B29/403 , H01L21/02395 , H01L21/02463 , H01L21/02507 , H01L21/0254 , H01L21/02546 , H01L21/02579 , H01L21/0262
摘要： A method for making high quality InGaAsN semiconductor devices is presented. The method allows the making of high quality InGaAsN semiconductor devices using a single MOCVD reactor while avoiding aluminum contamination.
摘要翻译：提出了一种制造高品质InGaAsN半导体器件的方法。该方法允许使用单个MOCVD反应器制造高质量的InGaAsN半导体器件，同时避免铝污染。

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