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41. 发明申请

US20100315865A1 DIODE ASSISTED SWITCHING SPIN-TRANSFER TORQUE MEMORY UNIT 有权
标题翻译：二极管辅助开关转子转矩记忆单元
公开(公告)号：US20100315865A1
公开(公告)日：2010-12-16
申请号：US12861932
申请日：2010-08-24
申请人： Xuguang Wang , Yiran Chen , Dimitar V. Dimitrov , Hongyue Liu , Xiaobin Wang
发明人： Xuguang Wang , Yiran Chen , Dimitar V. Dimitrov , Hongyue Liu , Xiaobin Wang
IPC分类号： G11C11/00
CPC分类号： G11C11/1675 , G11C11/161 , G11C11/1659
摘要： A memory array includes a cross-point array of bit and source lines. A memory is disposed at cross-points of the cross-point array. The memory unit includes a magnetic tunnel junction data cell electrically coupled to a bit line and a source line. The magnetic tunnel junction data cell is configured to switch between a high resistance state and a low resistance state by passing a polarized write current through the magnetic tunnel junction data cell. A transistor is electrically between the magnetic tunnel junction data cell and the bit line or source line and a diode is in thermal or electrical contact with the magnetic tunnel junction data cell to assist in resistance state switching.
摘要翻译：存储器阵列包括位线和源极线的交叉点阵列。存储器设置在交叉点阵列的交叉点处。存储单元包括电耦合到位线和源极线的磁性隧道结数据单元。磁隧道结数据单元被配置为通过使极化写入电流通过磁性隧道结数据单元在高电阻状态和低电阻状态之间切换。晶体管电连接在磁性隧道结数据单元与位线或源极线之间，二极管与磁性隧道结数据单元处于热或电接触以辅助电阻状态切换。

42. 发明申请

US20100302839A1 STATIS SOURCE PLANE IN STRAM 有权
标题翻译：统计资料来源：
公开(公告)号：US20100302839A1
公开(公告)日：2010-12-02
申请号：US12855896
申请日：2010-08-13
申请人： Hai Li , Yiran Chen , Hongyue Liu , Xuguang Wang
发明人： Hai Li , Yiran Chen , Hongyue Liu , Xuguang Wang
IPC分类号： G11C11/00
CPC分类号： G11C11/1675 , G11C11/1659
摘要： A memory array includes a plurality of magnetic tunnel junction cells arranged in a 2 by 2 array. Each magnetic tunnel junction cell is electrically coupled between a bit line and a source line and each magnetic tunnel junction cell electrically coupled to a transistor. Each magnetic tunnel junction cell is configured to switch between a high resistance state and a low resistance state by passing a write current passing though the magnetic tunnel junction cell. A first word line is electrically coupled to a gate of first set of two of the transistors and a second word line is electrically coupled to a gate of a second set of two of the transistors. The source line is a common source line for the plurality of magnetic tunnel junctions.
摘要翻译：存储器阵列包括以2×2阵列排列的多个磁性隧道结单元。每个磁性隧道结单元电耦合在位线和源极线之间，并且每个磁性隧道结单元电耦合到晶体管。每个磁性隧道结单元被配置为通过使经过磁性隧道结单元的写入电流通过高电阻状态和低电阻状态之间切换。第一字线电耦合到第一组晶体管的第一组的栅极，并且第二字线电耦合到第二组二个晶体管的栅极。源极线是用于多个磁性隧道结的公共源极线。

43. 发明授权

US07804709B2 Diode assisted switching spin-transfer torque memory unit 有权
标题翻译：二极管辅助开关自旋转移转矩存储单元
公开(公告)号：US07804709B2
公开(公告)日：2010-09-28
申请号：US12175724
申请日：2008-07-18
申请人： Xuguang Wang , Yiran Chen , Dimitar V. Dimitrov , Hongyue Liu , Xiaobin Wang
发明人： Xuguang Wang , Yiran Chen , Dimitar V. Dimitrov , Hongyue Liu , Xiaobin Wang
IPC分类号： G11C11/14
CPC分类号： G11C11/1675 , G11C11/161 , G11C11/1659
摘要： A memory unit includes a magnetic tunnel junction data cell electrically coupled to a bit line and a source line. The magnetic tunnel junction data cell is configured to switch between a high resistance state and a low resistance state by passing a polarized write current through the magnetic tunnel junction data cell. A transistor is electrically between the magnetic tunnel junction data cell and the bit line or source line and a diode is in thermal or electrical contact with the magnetic tunnel junction data cell to assist in resistance state switching.
摘要翻译：存储单元包括电耦合到位线和源极线的磁性隧道结数据单元。磁隧道结数据单元被配置为通过使极化写入电流通过磁性隧道结数据单元在高电阻状态和低电阻状态之间切换。晶体管电连接在磁性隧道结数据单元与位线或源极线之间，二极管与磁性隧道结数据单元处于热或电接触以辅助电阻状态切换。

44. 发明申请

US20100091546A1 HIGH DENSITY RECONFIGURABLE SPIN TORQUE NON-VOLATILE MEMORY 审中-公开
标题翻译：高密度可重构旋转扭矩非易失性存储器
公开(公告)号：US20100091546A1
公开(公告)日：2010-04-15
申请号：US12251788
申请日：2008-10-15
申请人： Hongyue Liu , Xuguang Wang , Yong Lu , Yiran Chen
发明人： Hongyue Liu , Xuguang Wang , Yong Lu , Yiran Chen
IPC分类号： G11C17/02 , G11C11/409 , G11C11/02
CPC分类号： G11C17/02 , G11C11/1659 , G11C11/1673 , G11C11/1675
摘要： One time programmable memory units include a magnetic tunnel junction cell electrically coupled to a bit line and a word line. The magnetic tunnel junction cell is pre-programmed to a first resistance state, and is configured to switch only from the first resistance state to a second resistance state by passing a voltage across the magnetic tunnel junction cell. In some embodiments, a transistor is electrically coupled between the magnetic tunnel junction cell and the word line or the bit line. In other embodiments, a device having a rectifying switching characteristic, such as a diode or other non-ohmic device, is electrically coupled between the magnetic tunnel junction cell and the word line or the bit line. Methods of pre-programming the one time programmable memory units and reading and writing to the units are also disclosed.
摘要翻译：一次可编程存储器单元包括电耦合到位线和字线的磁性隧道结单元。磁性隧道结单元被预编程为第一电阻状态，并且被配置为仅通过使磁性隧道结单元电流通过电压而从第一电阻状态切换到第二电阻状态。在一些实施例中，晶体管电耦合在磁性隧道结单元与字线或位线之间。在其他实施例中，具有整流开关特性的器件，例如二极管或其它非欧姆器件，电耦合在磁性隧道结单元与字线或位线之间。还公开了对一次可编程存储器单元进行预编程以及读取和写入单元的方法。

45. 发明申请

US20100014347A1 DIODE ASSISTED SWITCHING SPIN-TRANSFER TORQUE MEMORY UNIT 有权
标题翻译：二极管辅助开关转子转矩记忆单元
公开(公告)号：US20100014347A1
公开(公告)日：2010-01-21
申请号：US12175724
申请日：2008-07-18
申请人： Xuguang Wang , Yiran Chen , Dimitar V. Dimitrov , Hongyue Liu , Xiaobin Wang
发明人： Xuguang Wang , Yiran Chen , Dimitar V. Dimitrov , Hongyue Liu , Xiaobin Wang
IPC分类号： G11C11/00 , G11C11/34
CPC分类号： G11C11/1675 , G11C11/161 , G11C11/1659
摘要： A memory unit includes a magnetic tunnel junction data cell electrically coupled to a bit line and a source line. The magnetic tunnel junction data cell is configured to switch between a high resistance state and a low resistance state by passing a polarized write current through the magnetic tunnel junction data cell. A transistor is electrically between the magnetic tunnel junction data cell and the bit line or source line and a diode is in thermal or electrical contact with the magnetic tunnel junction data cell to assist in resistance state switching.
摘要翻译：存储单元包括电耦合到位线和源极线的磁性隧道结数据单元。磁隧道结数据单元被配置为通过使极化写入电流通过磁性隧道结数据单元在高电阻状态和低电阻状态之间切换。晶体管电连接在磁性隧道结数据单元与位线或源极线之间，二极管与磁性隧道结数据单元处于热或电接触以辅助电阻状态切换。

46. 发明授权

US06854318B2 Method and apparatus of nondestructive testing a sealed product for leaks 有权
标题翻译：无损检测密封产品泄漏的方法和装置
公开(公告)号：US06854318B2
公开(公告)日：2005-02-15
申请号：US10146558
申请日：2002-05-15
申请人： Nehemiah Hemi Sagi , Guosen Ronald Zhang , Ranajit Rana Ghosh , Xuguang Wang
发明人： Nehemiah Hemi Sagi , Guosen Ronald Zhang , Ranajit Rana Ghosh , Xuguang Wang
IPC分类号： G01L13/00 , G01M3/04 , G01M3/32
CPC分类号： G01M3/3254 , G01M3/04 , G01M3/3281 , G01M3/329
摘要： A method of testing a product for leaks includes applying to the product a reference pressure that is less than 50.6 KPa. The method also includes developing a gas flow through a leak detection sensor in response to applying the reference pressure to the product. Another step of the method includes determining, based upon the gas flow between the product and the pressure system, whether the product leaked an unacceptable amount during the test period.
摘要翻译：测试产品泄漏的方法包括向产品施加小于50.6KPa的参考压力。该方法还包括响应于对产品施加参考压力而开发通过泄漏检测传感器的气流。该方法的另一步骤包括基于产品和压力系统之间的气体流量来确定在测试期间产品是否泄露了不可接受的量。

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