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    • 44. 发明授权
    • Exhaust pressure detector
    • 排气压力检测器
    • US08383428B2
    • 2013-02-26
    • US13087973
    • 2011-04-15
    • Seung Yong Lee
    • Seung Yong Lee
    • H01L21/00
    • G01M15/106
    • An exhaust pressure measuring device including a connection pipe connected to a middle of an exhaust line for carrying byproduct gas, the connection pipe having an opening formed in a middle of a body thereof; a chamber provided at an outer side of the connection pipe and communicating with an inside of the connection pipe through the opening, the chamber having a nitrogen supply line connected thereto, the nitrogen supply line allowing nitrogen gas to be supplied from the outside; and a pressure sensor installed to the chamber to measure pressure in the chamber, whereby a change of exhaust pressure in the exhaust line is measured from the measured pressure in the chamber.
    • 一种排气压力测量装置,包括连接到用于承载副产物气体的排气管的中间的连接管,所述连接管具有形成在其本体中部的开口; 设置在连接管的外侧的室,通过开口与连接管的内部连通,所述室具有与其连接的氮供给管,所述氮供给管允许从外部供给氮气; 以及压力传感器,其被安装到所述室中以测量所述室中的压力,由此根据所述室中的测量压力来测量排气管线中的排气压力的变化。
    • 46. 发明申请
    • MOS VARACTOR AND FABRICATING METHOD OF THE SAME
    • MOS变压器及其制作方法
    • US20100244113A1
    • 2010-09-30
    • US12565197
    • 2009-09-23
    • Jae-Sung RiehYong Ho OhSue Yeon KimSeung Yong Lee
    • Jae-Sung RiehYong Ho OhSue Yeon KimSeung Yong Lee
    • H01L29/93H01L21/329
    • H01L29/93H01L29/66174
    • The present invention provides a MOS varactor for use in circuits and elements of a millimeter-wave frequency band, which is capable of reducing series resistance and enhancing a Q-factor by using a plurality of island-like gates seated in a well region of a substrate and gate contacts directly over the gates, and a method of fabricating the MOS varactor. The MOS varactor include: island-like gate insulating layers which are arranged at equal intervals in the form of a (n×m) matrix (where, n and m are integers equal to or larger than one), and a gate electrode of a first height (t1) placed on the gate insulating layers in a well region of a substrate; a gate contact which contacts the gate electrode; a first metal wire of a second height (t2) (where, t1
    • 本发明提供一种用于毫米波频带的电路和元件的MOS可变电抗器,其能够通过使用位于一个或多个的区域中的多个岛状门来降低串联电阻并提高Q因子 衬底和栅极直接连接在栅极上,以及制造MOS变容二极管的方法。 MOS变容二极管包括:以(n×m)矩阵(其中,n和m为1以上的整数)等间隔配置的岛状栅极绝缘层,以及栅电极 第一高度(t1)放置在衬底的阱区域中的栅极绝缘层上; 接触栅电极的栅极接触; 电连接到栅极触点的第二高度(t2)(其中,t1