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    • 43. 发明申请
    • Resource allocation apparatus and method for reducing overhead in mobile communication system
    • 用于减少移动通信系统中的开销的资源分配装置和方法
    • US20110053626A1
    • 2011-03-03
    • US12806963
    • 2010-08-25
    • Jun-Sung LimHyun-Kyu Yu
    • Jun-Sung LimHyun-Kyu Yu
    • H04B7/00
    • H04W72/042
    • A method and apparatus change resource allocation to reduce overhead in a mobile communication system. The method of operating a base station for changing a fixed resource allocation to reduce overhead in a mobile communication system includes determining whether a plurality of fixed resource allocations collide in a fixed resource allocation period. If the fixed resource allocations collide, at least one fixed resource allocation among the plurality of fixed resource allocations is cancelled in the fixed resource allocation period and a determination is made on whether to reallocate the at least one fixed resource allocation before a next fixed resource allocation period. If the at least one fixed resource allocation is reallocated before the next fixed resource allocation period, a control message containing reallocation information changed with respect to the at least one fixed resource allocation is transmitted to a corresponding mobile station. Accordingly, a location of an allocation resource region based on a fixed resource allocation can be effectively changed by using minimum control information.
    • 一种方法和装置改变资源分配以减少移动通信系统的开销。 操作基站用于改变固定资源分配以减少移动通信系统中的开销的方法包括确定多个固定资源分配在固定资源分配周期中是否发生冲突。 如果固定资源分配发生冲突,则在固定资源分配期间取消多个固定资源分配中的至少一个固定资源分配,并且确定在下一个固定资源分配之前是否重新分配至少一个固定资源分配 期。 如果在下一个固定资源分配周期之前重新分配至少一个固定资源分配,则将包含相对于至少一个固定资源分配改变的重新分配信息的控制消息发送到相应的移动台。 因此,可以通过使用最小控制信息有效地改变基于固定资源分配的分配资源区域的位置。
    • 47. 发明授权
    • Method of manufacturing a semiconductor device having buried elements
with electrical characteristic
    • 具有具有电特性的埋设元件的半导体器件的制造方法
    • US5286670A
    • 1994-02-15
    • US880892
    • 1992-05-08
    • Sang-Won KangHyun-Kyu YuWon-Gu Kang
    • Sang-Won KangHyun-Kyu YuWon-Gu Kang
    • H01L21/304H01L21/02H01L21/74H01L21/762H01L21/822H01L21/8242H01L23/52H01L23/535H01L27/04H01L27/10H01L27/108H01L27/12H01L21/302
    • H01L28/20H01L21/743H01L21/76248H01L21/76251H01L23/535H01L28/40H01L2924/0002Y10S148/012Y10S148/135
    • There are disclosed a semiconductor device having electrical elements buried a SOI substrate and a manufacturing method thereof, the manufacturing method of the invention comprising the steps of: (a) forming a first isolating insulator layer at a seed wafer by using an isolation mask, depositing a second isolating insulator layer overlying the first isolating insulator layer and the seed wafer, and defining contact holes by using a contact mask to form contacts on the seed wafer; (b) depositing a first polysilicon layer on the second isolating insulator layer and the contacts and doping an impurity into the first polysilicon layer; (c) patterning the first polysilicon layer to define an electrical element, depositing an insulating layer around the electrical element, and forming a second polysilicon layer overlying the second isolating insulator layer and the insulating layer; (d) doping an impurity into the second polysilicon layer for connecting with a handling wafer, and polishing the second polysilicon layer thus doped to form a mirror surface; (e) depositing an insulating layer for connection on the handling wafer, and performing a thermal process to bond the handling wafer and the mirror surface through the insulating layer for connection; and (f) polishing the seed wafer until the first isolating insulator layer as a polishing stopper is exposed, to form the SOI substrate having an active region where a device is formed, by the invention the efficiency of chip area can be promoted.
    • 公开了一种具有掩埋SOI衬底的电气元件的半导体器件及其制造方法,本发明的制造方法包括以下步骤:(a)通过使用隔离掩模在晶种晶片上形成第一隔离绝缘体层, 覆盖所述第一隔离绝缘体层和所述晶种晶片的第二隔离绝缘体层,以及通过使用接触掩模在所述晶种晶片上形成接触来限定接触孔; (b)在所述第二隔离绝缘体层上沉积第一多晶硅层和所述接触并将杂质掺杂到所述第一多晶硅层中; (c)图案化所述第一多晶硅层以限定电元件,在所述电气元件周围沉积绝缘层,以及形成覆盖所述第二隔离绝缘体层和所述绝缘层的第二多晶硅层; (d)将杂质掺杂到所述第二多晶硅层中以与处理晶片连接,以及抛光所述掺杂的第二多晶硅层以形成镜面; (e)在所述处理晶片上沉积用于连接的绝缘层,以及执行热处理以通过所述绝缘层将所述处理晶片和所述镜表面接合以进行连接; 并且(f)研磨种子晶片直到作为抛光停止体的第一隔离绝缘体层露出为止,形成具有器件形成的有源区的SOI衬底,通过本发明可以提高芯片面积的效率。